Abstract: A method of producing porous complex oxides includes the steps of providing a mixture of a) precursor elements suitable to produce the complex oxide; or b) one or more precursor elements suitable to produce particles of the complex oxide and one or more metal oxide particles; and c) a particulate carbon-containing pore-forming material selected to provide pore sizes in the range of approximately 7 nm to 250 nm, and treating the mixture to (i) form the porous complex oxide in which two or more of the precursor elements from (a) above or one or more of the precursor elements and one or more of the metals in the metal oxide particles from (b) above are incorporated into a phase of the complex metal oxide and the complex metal oxide has grain sizes in the range of about 1 nm to 150 nm; and (ii) remove the pore-forming material under conditions such that the porous structure and composition of the complex oxide is substantially preserved. The method may be used to produce non-refractory metal oxides as well.

Abstract: A method and device for manufacturing a viscous or semisolid product. The device includes a versatile product holding tray for manufacturing or forming the product. This tray is a polygonal member that includes a top surface for receiving the liquid or semisolid product, and a plurality of sides wherein at least one side includes a registration recess that is configured and dimensioned to receive at least a portion of a retaining bar of an endless conveyor to facilitate positioning of the tray upon the conveyor so that the retaining bar advances the tray during manufacture of the product. The device also includes an endless conveyor that includes a plurality of spaced tray retainer bars thereon for holding and advancing the tray to one or more product forming stations for forming the product on the trays.

Abstract: The present invention relates to structured triglyceride, to parental nutrition emulsions comprising same, and use thereof. In particular, the invention relates to structured triglycerides comprising at least one medium chain C6-C12 fatty acid and at least one fatty acid selected from the group consisting of long chain C14-C18 or very long chain C20-C22 fatty acids, preferably each fatty acid is present in a predetermined position of the glycerol backbone. The parenteral nutrition emulsions are particularly useful for nourishing preterm- and term-infants, children, critically ill patients, and cancer patients.

Abstract: The present invention provides IFN?2 mutants and active fragments, analogs, derivatives, and variants thereof, nucleotide molecules encoding same, pharmaceutical compositions containing the same, and methods utilizing the same for treating cancer, infectious diseases, and autoimmune diseases.

Abstract: The invention concerns a method of treating one or both bonding surfaces of first and second substrates and in particular, the surfaces of donor and receiver wafers that are intended to be bonded together. A simultaneous cleaning and activation step is carried out immediately prior to bonding the wafers together, by applying to one or both bonding surfaces an activation solution of ammonia (NH4OH) in water, preferably deionized, at a concentration by weight in the range from about 0.05% to 2%. The method is applicable to fabricating structures used in the optics, electronics, or optoelectronics fields.

Abstract: The present invention relates to influenza vaccines for human and veterinary use. In particular, the present invention provides a vaccine able to effect long term and cross-strain protection by including at least two influenza virus epitopes expressed as a chimeric polypeptide wherein at least one epitope is influenza A virus matrix protein epitope and the second epitope is a haemagglutinin peptide epitope.

Abstract: A process for preparing a texturizing powder by creating a mixture of egg and milk protein components, pasteurizing the mixture at a temperature that is sufficiently high to eliminate bacteria, and drying the pasteurized mixture to form a powder that retains the functional and organoleptic properties of the egg when reconstituted in an aqueous medium is provided. A texturizing powder and edible compositions including the powder are also described.

Abstract: We have disclosed a modular personal network (MPN) that includes multiple devices that may be worn, carried, or used in close proximity to a user. The devices communicate wirelessly. Functions of the MPN may be modified by adding or removing components. The MPN may communicate with a personal computer. General purpose devices may include a control unit, a display, a user input, and an audio output. The MPN may provide a variety of functions, including time, communication, entertainment, organization, guidance, athletic, medical, travel, outdoors, identity, security, and military.

Abstract: We have disclosed a modular personal network (MPN) that includes multiple devices that may be worn, carried, or used in close proximity to a user. The devices communicate wirelessly. Functions of the MPN may be modified by adding or removing components. The MPN may communicate with a personal computer. General purpose devices may include a control unit, a display, a user input, and an audio output. The MPN may provide a variety of functions, including time, communication, entertainment, organization, guidance, athletic, medical, travel, outdoors, identity, security, and military.

Abstract: The invention discloses a method of converting carbon dioxide to methanol and/or dimethyl ether using any methane source or natural gas consisting of a combination of steam and dry reforming, in a specific ratio to produce a 2:1 molar ratio of hydrogen and carbon monoxide with subsequent conversion of the CO and H2 mixture exclusively to methanol and/or dimethyl ether. This method is termed the BI-REFORMING™ process. Dehydrating formed methanol allows producing dimethyl ether (DME) using any suitable catalytic method, including use of solid acid catalysts. When recycling formed water into the bi-reforming step the conversion of carbon dioxide with methane produces exclusively dimethyl ether without any by-product formation and complete utilization of hydrogen.

Abstract: The present invention concerns a process for the preparation of a compound of formula (I) wherein R represents a Me or Et group, as well said compound in the form of any one of its stereoisomers or mixture thereof. The invention concerns also the use of compound (I) for the synthesis of ?-santalol or of derivatives thereof.

Abstract: A process for fabricating a composite structure for epitaxy, including at least one crystalline growth seed layer of semiconductor material on a support substrate, with the support substrate and the crystalline growth seed layer each having, on the periphery of their bonding face, a chamfer or an edge rounding zone. The process includes at least one step of wafer bonding the crystalline growth seed layer directly onto the support substrate and at least one step of thinning the crystalline growth seed layer. After thinning, the crystalline growth seed layer has a diameter identical to its initial diameter.

Abstract: The present invention relates to methods for treating renal failure. Particularly, the present invention relates to methods for treating renal failure by administering to a subject complexes that include a member of the IL-6 family linked to a soluble receptor of the member of the IL-6 family, or isolated polynucleotides encoding same, the complexes capable of activating a gp130 mediated signaling pathway, thereby treating acute or chronic renal failure.

Abstract: A comminution plant for comminuting material includes a set of fixed bottom knifes separated by parallel opening, two parallel shafts extending crosswise of the openings, a set of upper knifes attached on respective shafts and extending partly into the openings, and at least one drive assembly for rotating the shafts during operation. The upper knifes on one shaft include first and second knifes with the second one having a diameter which is smaller than the first. The upper knifes on the other shaft includes third and fourth knifes with the fourth one having a diameter which is smaller than the third. The diameters of the first and third knives are of a size which is larger than twice the distance between the axes of rotation of the at least two shafts. The comminution plant according to the invention can comminute a material effectively and to high degree of fineness.

Abstract: A method of producing a semiconductor structure having a buried insulating layer having a thickness between 2 and 25 nm, by: forming at least one insulating layer on a surface of a first or second substrate, or both, wherein the surfaces are free from an insulator or presenting a native oxide layer resulting from exposure of the substrates to ambient conditions; assembling the first and second substrates; and thinning down the first substrate, in order to obtain the semiconductor structure. In this method, the insulating layer forming stage is a plasma activation based on an oxidizing or nitriding gas.

Abstract: The present invention provides improved methods for fabricating compound-material wafers, in particular a silicon on insulator type wafer. The improved methods lead to reduced numbers of deflects arising on or near the periphery of the wafers. In a first method, wafers are selected in dependence on edge roll off values determined at about 0.5-2.5 mm away from the edge of the wafer, where edge roll off values are determined in dependence on the second derivative of the wafer height profiles. In a second method, wafers selected according to the first method are further processed by bonding, forming a splitting layer, and detaching the two wafers at the splitting layer.

Abstract: A method is presented for cutting an assembly that includes two layers of material having a first surface and a second surface. The method includes providing a weakened interface between the two layers that defines an interface ring about the periphery of the assembly, providing a high-pressure zone at the interface ring, and providing at least one controllable low-pressure zone in the vicinity of at least one of the first surface and the second surface. The technique also includes supplying the high-pressure zone with a controllable high-pressure force, and attacking the interface ring with at least one mechanical force in combination with the high-pressure force to cut the assembly.

Abstract: A method for fabricating a semiconductor substrate. In an embodiment, this method includes the steps of transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. The result is a semiconductor substrate that includes the at least one layer of semiconductor material on a support substrate.

Abstract: A composite support designed to successfully receive a transfer layer made of a crystalline material so that the assembly forms an epitaxy substrate, with the support having a longitudinal plane of symmetry parallel to its principal surfaces and a plurality of layers. The support includes a central first layer having a first thermal expansion coefficient at a specified temperature T and extending transversely on either side of the plane of symmetry and at least one pair of lateral layers. The layers of each pair, one with respect to the other, have arrangements in the composite support that are substantially symmetrical with respect to the plane of symmetry; second thermal expansion coefficients at the temperature T that are substantially identical to one another; and thicknesses that are substantially identical to one another.

Abstract: A method for reducing the roughness of a free surface of a semiconductor wafer that includes establishing a first atmosphere in an annealing chamber, replacing the first atmosphere with a second atmosphere that includes a gas selected to and in an amount to substantially eliminate or reduce pollutants on a wafer, and exposing the free surface of the wafer to the second atmosphere to substantially eliminate or reduce pollutants thereon. The second atmosphere is then replaced with a third atmosphere that includes pure, and rapid thermal annealing is performed on the wafer exposed to the third atmosphere in the annealing chamber to substantially reduce the roughness of the free surface of the wafer.