Abstract: A method and system for testing a semiconductor package. At least some of the illustrative embodiments are methods comprising testing a semiconductor package unit (150, 420) by electrically coupling a top printed circuit board (208, 420) to a top-side of a semiconductor package unit (150, 420), the coupling using electrically conductive top-side pogo pins (201A, 420), and a pair of adjacent top-side pogo pins (201A, 420) bridged using an electrically conductive path (302, 420), electrically coupling a bottom printed circuit board (210, 430) to a bottom-side of the semiconductor package unit (150, 430), the coupling using electrically conductive bottom-side pogo pins (201B, 430), said top-side pogo pins (201A, 430) and said bottom-side pogo pins are of substantially equal height (201B, 430), and transmitting test signals from the bottom printed circuit board to the semiconductor device package by way of the bottom-side pogo pins (210, 440).

Abstract: Various exemplary embodiments provide components, devices, and methods of semiconductor packaging. The disclosed packaging component can include a mold material disposed around a lead frame and at least an integrated circuit (IC), wherein the IC is electrically connected with one side of the lead frame. The opposite side of the lead frame including, for example, lead segments, can be exposed from the mold material. A variety of other components, devices, and packages can then be assembled, e.g., over the disclosed packaging component, through the exposed regions so as to improve packaging densities.

Abstract: A packaged electronic device includes a thickness shaped IC die including a top portion, top surface, active circuitry, bottom portion and bottom surface. A cross sectional area of the bottom surface is ?5% less than a cross sectional area of the top surface to provide a protruding lip having a bottom lip surface. A package substrate includes a top substrate surface including substrate bonding sites, a bottom substrate surface, and a die support structure on the top substrate surface having a gap region. The bottom lip surface of the IC die is secured to the die support structure and the bottom surface of the IC die extends below the die support structure into the gap region. Coupling connectors couple the bonding features on the IC die to the substrate bonding sites.

Abstract: A semiconductor flip-chip ball grid array package (600) with one-metal-layered substrate. The sites (611) of a two-dimensional array become usable for attaching solder balls of the signal (non-common net assignment) I/O type to the substrate under the chip area (601), when the sites can be routed for metal plating (620). The space to place a maximum number (614) of signal routing traces is opened up by interrupting the periodicity of the site array from the edge (602) of the substrate towards the center under the chip. The periodicity is preferably interrupted by depopulating entire aligned lines and rows of the two-dimensional array.

Abstract: According to an embodiment of the invention, a system, operable to facilitate dissipation of thermal energy, includes a mold compound, a die, a first lead frame, and a second lead frame. The die is disposed within the mold compound, and in operation generates thermal energy. The first lead frame is disposed at least partially within the mold compound and is operable to facilitate transmission of a signal. The second lead frame is disposed at least partially within the compound, at least partially separated from the first lead frame, and is operable to facilitate a dissipation of thermal energy.

Abstract: An integrated circuit (IC) includes a substrate having a top semiconductor surface and a bottom surface, and integrated circuitry including an analog subcircuit and at least one digital subcircuit formed on the top semiconductor surface. A plurality of through substrate vias (TSVs) extend through the substrate. At least one integrated Faraday shield includes a top and a bottom electrically conducting member that are coupled by the TSVs which surround the analog subcircuit and/or the digital subcircuit. At least one voltage regulator supplies a regulated power supply voltage that is coupled to the integrated Faraday shield that surrounds the analog subcircuit.

Abstract: In a method and system for fabricating a thermally enhanced semiconductor device (200, 300) is packaged as a through hole single inline package (SIP). A leadframe (210, 310, 410) having a die pad (220, 320, 420) to attach an IC die (230, 330), a first plurality of conductive leads (240, 340, 430) formed from a first portion of metal sheet (432), and a second portion of metal sheet (440) disposed on an opposite side of the IC die (230, 330) as the first plurality of conductive leads is stamped from a metal sheet. The first plurality of conductive leads (240, 340, 430) are arranged in a single line and are capable of being through hole mounted in accordance with the SIP. The second portion of metal sheet (440) includes the die pad (420) to form a heat spreader (260, 360) in the form of the metal sheet. The heat spreader (260, 360) provides heat dissipating for the heat generated by the IC die (230, 330).

Abstract: A packaged integrated circuit (IC) (100) includes a first substrate (110) comprising a first plurality of layers and a first circuit coupling features (112) at an upper surface of the first substrate (110), the first plurality of layers including a first electromagnetic interference shielding layer (132). The packaged IC also includes a second substrate (106) having an upper surface attached to a lower surface of the first substrate (110) by an electrically conductive adhesive material (136). The second substrate (106) includes a second plurality of layers and a second circuit coupling feature (108) at a lower surface of the second substrate (106). The first plurality of layer includes a second EMI shielding layer (134). The packaged IC further includes a functional die (124) disposed between the first (110) and the second (106) substrates and functionally coupled to the first (112) and/or the second (108) circuit coupling features.

Abstract: A package-on-package (POP) package precursor and packaged devices and systems therefrom includes an electronic substrate including electrically conductive layers and a top surface. A first portion of the top surface has an IC die attached thereon. A second portion of the top surface has a plurality of first attach pads on opposing sides of the IC die for electrically coupling to a first electronic device on top of the IC die. At least a third portion of the top surface is positioned laterally with respect to the first and second portion. The third portion includes a plurality of second attach pads for electrically coupling to at least a second electronic device. At least one of the electrically conductive layers includes a coupling trace that couples at least one of the plurality of second attach pads to the IC die and/or one or more of the plurality of first attach pads.

Abstract: A semiconductor die package includes: an assembly including a semiconductor die, a clip structure attached to an upper surface of the semiconductor die, and a heat sink attached to an upper surface of the clip structure; and a molding material partially encapsulating the assembly, wherein an upper surface of the heat sink is exposed through the molding material.

Abstract: The objective of the invention is to prevent electrostatic destruction of semiconductor chips during resin molding. With the semiconductor device manufacturing method, a substrate 400 that includes on the surface multiple semiconductor chips 410 and liquid resin 434 supplied to multiple semiconductor devices is supported by an electrically insulated lower die 200. An upper die 110 in which multiple shape-forming parts (cavities) 112 are formed is pressed against lower die 200 through the medium of a polymer release film 300, and liquid resin 434 on the substrate is molded.

Abstract: A method of forming IC devices includes providing a substrate and forming a patterned masking layer including at least one masked region having at least one masking layer, and a feature region bounded by the masking layer. Etching forms an etched feature in the substrate, wherein undercutting during the etching forms at least one mask overhang region over a surface portion of the etched feature that is recessed relative to an outer edge of the masking layer. A pullback etch process exclusive of any additional patterning step laterally etches the masking layer. The conditions for the pullback etch retain at least a portion of the masking layer and reduce a length of the mask overhang region by at least 50%, or eliminate the mask overhang region entirely. The etched feature is then filled after the pullback etch process to form a filled etched feature.

Abstract: Methods and apparatus to evenly clamp semiconductor substrates in a transfer mold process are disclosed. A disclosed split mold base includes a first plate having a first surface, a second plate having a second surface opposite the first surface, and a plurality of springs that are disposed between the first and second plates to distribute a clamping pressure applied by a mold press.

Abstract: A leadframe for the assembly of a semiconductor chip has regions (112) with an original smooth surface of glossy appearance and regions (113, 114, 210) of a frosty appearance with rough surface contours. The regions of rough surface contours include two-dimensional arrays of spots (401) comprising a central area (402) below the original surface (400) and a piled ring (403) above the original surface. The piled ring (403) consists of the leadframe material in amorphous configuration.

Abstract: A high current semiconductor device (for example QFN for 30 to 70 A) with low resistance and low inductance is encapsulated by molding compound (401, height 402 about 0.9 mm) so that the second lead surfaces 110b remain un-encapsulated. A copper heat slug (404) may be attached to chip surface (101b) using thermally conductive adhesive (403). Chip surface (101a), protected by an overcoat (103) has metallization traces (102). Copper-filled windows (107) contact the traces and copper layers (105) parallel to traces (102). Copper bumps (108) are formed on each line in an orderly and repetitive arrangement so that the bumps of one line are positioned about midway between the bumps of the neighboring lines. A substrate has elongated leads (110) oriented at right angles to the lines; the leads connect the corresponding bumps of alternating lines.

Abstract: A method of making integrated circuit packages using a conductive plate as a substrate includes forming a partial circuit pattern on one side of the conductive plate by stamping or selectively removing a portion of the conductive plate through part of its thickness, and then electrically coupling semiconductor dies to the formed patterns on the conductive plate. The method further includes encapsulating at least a portion of the dies and the conductive plate with an encapsulant and removing a portion of the conductive plate from the side opposite the patterned side to form conductive traces based on the formed pattern.

Abstract: A method of laying out traces for connection of bond pads of a semiconductor chip to a printed wiring board or the like and the layout. There is provided a substrate having top and bottom surfaces with a plurality of rows and columns of vias extending therethrough from the top surface to the bottom surface and having a solder ball secured at the bottom surface to each via. A plurality of pairs of traces is provided on the top surface, each trace of each pair of traces extending to a different one of the vias and extending to vias on a plurality of the rows and columns, each of the traces of each pair being spaced from the other trace by a ball pitch, being maximized for identity in length and being maximized for parallelism and spacing. Each of the traces of a pair is preferably be further maximized for identity in cross-sectional geometry. A differential signal pair is preferably applied to at least one of a pair of traces.

Abstract: A post-mold plated semiconductor device has an aluminum leadframe (105) with a structure including a chip mount pad and a plurality of lead segments without cantilevered lead portions. A semiconductor chip (210) is attached to the chip mount pad, and conductive connections (212) span from the chip to the aluminum of the lead segments. Polymeric encapsulation material (220), such as a molding compound, covers the chip, the connections, and portions of the aluminum lead segments without leaving cantilevered segment portions. Preferably by electroless plating, a zinc layer (301) and a nickel layer (302) are on those portions of the lead segments, which are not covered by the encapsulation material including the aluminum segment surfaces (at 203b) formed by the device singulation step, and a layer (303) of noble metal, preferably palladium, is on the nickel layer.

Abstract: A mold lock and a method of forming the mold lock are provided. The mold lock is used in an encapsulated semiconductor device and includes a neck and a shaped head integral with the neck. The mold lock can be formed to project above a support component, such as a heat spreader, of the semiconductor device and the neck is formed from the support component. The shaped head is of a greater dimension than the neck and can present a “T” shape in side view or a “Y” shape in side view. A base portion of the neck is seated within the support component. A method is provided for forming the described mold lock.

Abstract: A through substrate via (TSV) die includes a plurality of TSVs including an outer dielectric sleeve and an inner metal core and protruding TSV tips including sidewalls that emerge from the TSV die. A passivation layer lateral to the protruding TSV tips is on a portion of the sidewalls of the protruding TSV tips. The passivation layers is absent from a distal portion of the protruding TSV tips to provide an exposed portion of the inner metal core. The TSV tips include bulbous distal tip ends including a first metal layer including a first metal other than solder and a second metal layer including a second metal other than solder that covers the exposed tip portion. The bulbous distal tip ends cover a portion of the TSV sidewalls and are over a topmost surface of the outer dielectric sleeve, and have a maximum cross sectional area that is ?25% more as compared to a cross sectional area of the protruding TSV tips below the bulbous distal tip ends.