Abstract: An electronic assembly adapted for forming package on package (PoP) devices includes a package substrate having a molded IC die thereon that defines a mold cap height and substrate contact pads lateral to the molded IC die. An interposer including an interposer substrate has bottom metal land pads and top metal land pads, interposer vias, and an open receptacle region formed through the interposer substrate. The substrate top surface is positioned relative to the interposer so that the molded IC die is within the open receptacle region to align the bottom metal land pads and substrate contact pads. An underfill layer is between the substrate top surface and the bottom side of the interposer substrate. A step height from the mold cap height minus a height of the top metal land pads is generally from 0 to 0.2 mm.

Abstract: A semiconductor device with a first (101) and a second (111) semiconductor chip assembled on an insulating flexible interposer (120). The interposer, preferably about 25 to 50 ?m thick, has conductive traces (121), a central planar rectangular area and on each side of the rectangle a wing bent at an angle from the central plane. The central area has metal studs (122, 123) on the top and the bottom surface, which match the terminals of the chips, further conductive vias of a pitch center-to-center about 50 ?m or less. The side wings have contact pads (130) with metallic connectors (131) on the bottom surface; the connectors may be solder balls, metal studs, or anisotropic conductive films. The second chip is adhesively attached to a substrate, whereby the interposer faces away from the substrate. The interposer side wings have a convex bending (150) downwardly along the second chip and a concave bending (151) over the substrate; the side wing connectors are attached to the matching substrate sites.

Abstract: One embodiment of the present invention includes a system for managing power to a plurality of devices-under-test (DUTs). The system comprises a DUT test system configured to perform at least one test associated with operation of the DUTs and to monitor current associated the at least one test of the plurality of DUTs. The DUT test system can communicate an instruction to a subset of the plurality of DUTs to cancel the at least one test if the monitored current is greater than a predetermined threshold. Each of the plurality of DUTs can comprise restart logic configured to restart the at least one test of the subset of the plurality of DUTs after being cancelled in response to the instruction.

Abstract: A method of forming stacked electronic articles using a through substrate via (TSV) wafer includes mounting a first carrier wafer to a top side of the TSV wafer using a first adhesive material that has a first debonding temperature. The TSV wafer is thinned from a bottom side of the TSV wafer to form a thinned TSV wafer. A second carrier wafer is mounted to the bottom side of the TSV wafer using a second adhesive material that has a second debonding temperature that is higher as compared to the first debonding temperature. The thinned TSV wafer is heated to a temperature above the first debonding temperature to remove the first carrier wafer from the thinned TSV wafer. At least one singulated IC die is bonded to TSV die formed on the top surface of the thinned TSV wafer to form the stacked electronic article.

Abstract: An electronic device (100) with one or more semiconductor chips (102) has an inductor (101) assembled on or under the chips. The inductor includes a ferromagnetic body (111) and a wire (104) wrapped around the body to form at least a portion of a loop; the wire ends (104a) are connected to the chips. The assembly is attached to a substrate (103), which may be a leadframe. The device may be encapsulated in molding compound (140) so that the inductor can double as a heat spreader (111c), enhancing the thermal device characteristics.

Abstract: The invention discloses apparatus and methods for the formation of bond wires in integrated circuit assemblies by attaching two separate wires using a dual capillary bond head. The separate wires are preferably non-identical, for example, being of different gauges and/or material composition. According to a preferred embodiment of the invention, dual capillary bond head apparatus includes a rotatable ultrasonic horn with a pair of capillaries for selectably dispensing separate strands of bond wire and for forming bonds on bond targets. According to another aspect of the invention, a method is provided for dual capillary IC wirebonding including steps for using two dual capillary bond heads for contemporaneously attaching non-identical bond wires to selected bond targets on one or more IC package assemblies.

Abstract: The invention provides semiconductor chip packages, tools, and methods for preventing and for correcting leadfinger deformation caused during wirebonding in semiconductor chip package manufacturing. Disclosed are improved heat blocks and methods for their use in ensuring adequate clearance between leadfingers and adjacent heat spreaders, as well as semiconductor chip package assemblies wherein a selected clearance between leadfingers and parallel surfaces may be assured. Methods of the invention include steps for supporting the proximal ends of the leadfingers using the wirebonding cavity of a heat block. Thus supported, a plurality of bondwires are attached to couple bond pads of the semiconductor chip to the proximal ends of leadfingers. Thereafter, the clearance between the wirebonded proximal ends of the leadfingers and the adjacent parallel surface of the heat spreader is adjusted using a spacing cavity of the heat block.

Abstract: The preferred embodiments of the present invention provide approaches for synchronizing signals in a testing system. In some embodiments, the timing signal associated with each device under test (DUT) is maintained at an integer multiple of the tester timing signal. Additionally, in other embodiments, the timing signal associated with various DUTs is used as a timing reference for other devices.

Abstract: A semiconductor device (100A) with plastic encapsulation compound (102) and metal sheets (103a and 104) on both surfaces, acting as heat spreaders. One or more thermal conductors (103a) of preferably uniform height connect one sheet (103b) and the chip surface (101a); the number of conductors is scalable with the chip size. Each conductor consists of an elongated wire loop (preferably copper) with the wire ends attached to a pad (105), preferably both ends to the same pad. The major loop diameter is approximately normal to the first surface and the loop vertex in contact with the sheet (103b). The substrate (104, preferably a second metal sheet) covers at least portions of the second package surface and is thermally conductively connected to the chip.

Abstract: A die to die bonding system and method includes an upper die having a front side, a back side, and a fully filled thru silicon via, a portion of the fully filled thru silicon via protruding from the back side of the upper die. A lower die includes a front side, a back side, and a partially filled thru silicon via formed to define a via opening exposed to the front side of the die, a portion of the partially filled thru silicon via protruding from the back side of the lower die. An interconnect bonds an outer surface of the protruding portion of the upper die thru silicon via with an inner surface of via opening in the lower die.

Abstract: A method of assembling an electronic device and electronic packages therefrom. A die attach adhesive precursor is placed between a top surface of a workpiece and an IC die. The die attach adhesive precursor includes metal particles, a first plurality of first microcapsules having a polymerizable material inside, and a second plurality of second microcapsules having a polymerization agent inside to form a first polymer upon rupture of first and second microcapsules. A force sufficient to rupture at least a portion of the first plurality of first microcapsules and at least a portion of the second plurality of second microcapsules is applied to form a self-healing die attach adhesive wherein the first polymer binds the plurality of metal particles and the remaining microcapsules and secures the IC die to the top surface of the workpiece. The self-healing die attach adhesive generally includes at least 90 vol. % metal.

Abstract: The objective of the invention is to provide a method of manufacturing a semiconductor device that allows individual molding of plural semiconductor chips carried on a surface of the substrate. It includes the following process steps: a process step in which plural semiconductor elements 102 are arranged on the surface of substrate 100; a process step in which the inner side of substrate 102 is fixed on lower die 130; a process step in which liquid resin 114 is supplied from nozzle 112 onto each of the semiconductor elements in order to cover at least a portion of each of semiconductor chips 102; a process step in which the upper die having plural cavities 144 formed in one surface is pressed onto the lower die, and liquid resin 114 is molded at a prescribed temperature by means of plural cavities 144; and a process step in which cavities 144 of upper die 140 are detached from the substrate, and plural molding resin portions are formed individually.

Abstract: A TSV-MEMS packaging process is provided. The process includes forming TSVs in the front side of the product wafer, and attaching a first carrier to the front side of the product wafer, subsequent to forming TSVs. The process further includes thinning the back side of the product wafer to expose TSV tips, detaching the first carrier from the front side of the product wafer, and transferring the thinned wafer to a second carrier with back side adhered to the second wafer carrier. Semiconductor components are added to the front side of the product wafer, followed by forming a hermetic cavity over the added semiconductor components, and detaching the second carrier from the back side of the product wafer. Wafer level processing continues after detaching the second carrier.

Abstract: A method of packaging an integrated circuit, including providing a lead frame having lead fingers, where the lead frame has a gold layer thereon on a top surface and a bottom surface. An integrated circuit die is attached to the lead frame. The gold layer is substantially removed from portions of the top surface of the lead frame. The integrated circuit die is wire bonded to the lead fingers with a plurality of wire stitches subsequent to substantially removing the gold. The die is encapsulated in a mold compound to form a packaged integrated circuit.

Abstract: Quick changeover apparatus for wafer handlers capable of handling at least two sizes of wafer frames and methods of using such apparatus are disclosed.

Abstract: An electronic package comprising a semiconductor device, a heat spreader layer, and a thermal interface material layer located between the semiconductor device and the heat spreader layer. The thermal interface material layer includes a resin layer having heat conductive particles suspended therein. A portion of the particles are exposed on at least one non-planar surface of the resin layer such that the portion of exposed particles occupies a majority of a total area of a horizontal plane of the non-planar surface.

Abstract: The objective of the present invention is to offer a method for forming a conductive pattern on a substrate and solder protrusions on the conductive pattern. The pitch of the conductive pattern corresponds to the pitch of electrodes on a semiconductor chip.

Abstract: An IC includes a substrate having a semiconductor top surface and a bottom surface, wherein the semiconductor top surface includes one or more active circuit components and a plurality of through silicon vias (TSVs) extending through the substrate. The plurality of TSVs include an outer dielectric liner. The dielectric liner includes at least one halogen or a Group 15 element metal gettering agent in an average concentration from 1 to 10 atomic %. A metal diffusion barrier layer is on the dielectric liner and a metal filler is on the metal barrier layer. The metal gettering agent getters metal filler that escapes the metal barrier layer.

Abstract: Semiconductor wafer sawing systems and methods are described in which a wafer may be secured in a sawing position having a surface exposed to incur sawing with at least a portion of the exposed wafer surface positioned below the center of gravity of the wafer such that prevailing force of gravity may be used to assist in the removal of contaminants from the wafer.

Abstract: A semiconductor device with a sheet-like insulating substrate (101) integral with two or more patterned layers of conductive lines and vias, a chip attached to an assembly site, and contact pads (103) in pad locations has an encapsulated region on the top surface of the substrate, extending to the edge of the substrate, enclosing the chip, and having contact apertures (703) at the pad locations for external communication with the pad metal surfaces. The apertures may have not-smooth sidewall surfaces and may be filled with solder material (704) to contact the pads. Metal-filled surface grooves (710) in the encapsulated region, with smooth groove bottom and sidewalls, are selected to serve as customized routing interconnections, or redistribution lines, between selected apertures and thus to facilitate the coupling with another semiconductor device to form a package-on-package assembly.