Patents Assigned to 4D-S Pty Ltd.
  • VOLTAGE EXCITED PIEZOELECTRIC RESISTANCE MEMORY CELL SYSTEM
    Publication number: 20100276655
    Abstract: The present invention discloses a memory system comprising a plurality of crystals, and at least two conductors. The at least two conductors being orthogonal to each other. Wherein at least one of the plurality of crystals are bounded by the orthogonal intersection of the at least two conductors.
    Type: Application
    Filed: February 16, 2009
    Publication date: November 4, 2010
    Applicant: 4D-S PTY. LTD.
    Inventor: Gilbert Springer
  • CONCENTRIC HOLLOW CATHODE MAGNETRON SPUTTER SOURCE
    Publication number: 20090188790
    Abstract: A new sputter source is disclosed that allows for high rates of deposition at pressures one or two orders of magnitude lower than has previously been obtained. This results in denser films with reduced ion and electron damage to the substrate.
    Type: Application
    Filed: January 16, 2009
    Publication date: July 30, 2009
    Applicant: 4D-S Pty. Ltd.
    Inventors: DANIEL BRORS, Dominik Schmidt, Michael Hawran, Dave Correia, Art Shulenberger
  • Systems and methods for plasma etching
    Patent number: 7425504
    Abstract: Systems and methods are disclosed for processing a semiconductor substrate by depositing a conductive layer on the substrate; patterning a set of insulating structures on the substrate; selectively back-biasing the substrate; depositing a layer of material on the substrate; and removing a part of the conductive layer selectively biased to attract cation bombardment.
    Type: Grant
    Filed: October 15, 2004
    Date of Patent: September 16, 2008
    Assignee: 4D-S Pty Ltd.
    Inventors: Makoto Nagashima, Dominik Schmidt