Abstract: A semiconductor module includes a substrate, at least one chip, at least one signal assembly, a first molding compound, and a second molding compound. The chip is disposed on the substrate and electrically connected to the substrate. The signal assembly is disposed on the substrate in a normal direction of the substrate and electrically connected to the substrate. The first molding compound is disposed on the substrate. The first molding compound at least covers the chip and has at least one opening, and the opening exposes the signal assembly. The second molding compound is disposed on the substrate and fills the opening. The second molding compound is located between the signal assembly and the first molding compound, and covers the signal assembly. At least one contact interface is formed between the second molding compound and the first molding compound.

Abstract: Disclosed are an energy conversion module and an energy conversion device. The energy conversion module includes an encapsulation structure and an integrated module packaged therein, the integrated module includes a trace, a power chip, a transistor control element and an energy storage device. The trace includes at least two electrodes, one is exposed from a first surface of the encapsulation structure, and the other is exposed from a second surface of the encapsulation structure. The first surface is opposite to the second surface. The power chip is respectively connected to the two electrodes of the trace. The transistor control element controls the power chip to perform energy conversion through the trace. The energy storage device supplies energy to the transistor control element through the trace.

Abstract: A heat dissipation structure includes a substrate and an annular groove. The substrate has an upper surface and a lower surface opposite to each other. The annular groove is configured on the upper surface of the substrate to divide the substrate into a configuration area and a periphery area. The annular groove is located between the configuration area and the periphery area. A depth of the annular groove is less than or equal to half of a thickness of the substrate.

Abstract: A power semiconductor package signal connection component includes a cylinder having a first through hole and two bases respectively disposed on opposite sides of the cylinder. Each base includes a continuous protrusion pattern and has a flat surface, a curved surface, and a second through hole. The flat surface is connected to the curved surface, and a first side of the curved surface is connected to the cylinder. The second through hole runs through the curved surface and communicates with the first through hole. The continuous protrusion pattern is connected to a second side of the curved surface and is located on the flat surface.

Abstract: A circuit substrate includes a base material, a first electrode, and a second electrode. The base material has an upper side and a lower side opposite to each other in a length direction. The first electrode extends and is configured on the base material along the length direction. The second electrode is configured beside the first electrode and includes a first portion and a second portion connected to each other. The first portion is configured on the base material along the length direction. The second portion is configured on the base material along a width direction and is located between the upper side and the first electrode. A cross-sectional width of the first portion becomes larger from the lower side to the upper side.

Abstract: An intelligent power module packaging structure includes an insulated heat dissipation substrate, a plurality of power devices, a control chip, a lead frame, and an encapsulant. The insulated heat dissipation substrate has a first surface and a second surface opposite to the first surface. The power devices are disposed on the first surface. The control chip is disposed on the first surface. The control chip provides a gate driver function for driving the power devices and a pulse width modulation function. The lead frame is bonded onto the first surface. The power devices are electrically connected to the control chip and the lead frame. The encapsulant at least encapsulates the power devices, the control chip, and a portion of the lead frame, and the second surface is entirely or partially exposed outside the encapsulant.

Abstract: An alternator and a rectifier thereof are provided. The rectifier includes a transistor and a gate voltage control circuit. The transistor is controlled by a gate voltage. The gate voltage control circuit generates the gate voltage according to a voltage difference between an input voltage and a rectified voltage. During a first time interval after the voltage difference drops to a first preset threshold voltage, the gate voltage control circuit determines whether the voltage difference is less than a second preset threshold voltage, and decides whether to provide the gate voltage to turn on the transistor. When the transistor is turned on, the voltage difference substantially equals to a first reference voltage. And during a second time interval, the gate voltage control circuit regulates the gate voltage to set the voltage difference substantially to a second reference voltage.

Abstract: Provided is a rectifier device for a vehicle alternator including a rectifying element for rectifying in an alternator. The rectifying element has an Enhanced Field Effect Semiconductor Diode (EFESD). The EFESD includes a lateral conducting silicide structure and a field effect junction structure integrating side by side. A rectifier, a generator device, and a powertrain for a vehicle are also provided.

Abstract: An alternator and a rectifier thereof are provided. The rectifier includes a transistor and a gate voltage control circuit. A control end of the transistor receives a gate voltage. The gate voltage control circuit generates the gate voltage according to a voltage difference between an input voltage and a rectified voltage. The gate voltage control circuit detects a first time point when the voltage difference is less than a first preset threshold voltage, provides the gate voltage during a first time interval after the first time point to turn on the transistor, and sets the voltage difference to a first reference voltage. The gate voltage control circuit regulates the gate voltage to set the voltage difference to a second reference voltage during a second time interval after the first time interval. The first time interval is independent of a cycle of the input voltage.

Abstract: An electronic actuator device and a control method thereof are provided. The electronic actuator device includes a plurality of first and second power switches and a driving circuit. The first power switches respectively provide a first reference voltage to a plurality of voltage receiving ends of a motor respectively according to a plurality of first control signals. The second power switches respectively provide a second reference voltage to the voltage receiving ends respectively according to a plurality of second control signals. The driving circuit generates the first and second control signals. In a braking operation, the first power switches are turned on during a plurality of first time periods, and the second switches are turned on during a plurality of second time periods that are alternate and non-overlapped with the first time periods. An interval time period is present between each adjacent two of the first and second time periods.

Abstract: An electronic actuator device and a control method thereof are provided. The electronic actuator device includes a plurality of first and second power switches and a driving circuit. The first power switches respectively provide a first reference voltage to a plurality of voltage receiving ends of a motor respectively according to a plurality of first control signals. The second power switches respectively provide a second reference voltage to the voltage receiving ends respectively according to a plurality of second control signals. The driving circuit generates the first and second control signals. In a braking operation, the first power switches are turned on during a plurality of first time periods, and the second switches are turned on during a plurality of second time periods that are alternate and non-overlapped with the first time periods. An interval time period is present between each adjacent two of the first and second time periods.

Abstract: An alternator and a rectifier thereof are provided. The rectifier includes a transistor and a gate voltage control circuit. The transistor is controlled by a gate voltage. The gate voltage control circuit generates the gate voltage according to a voltage difference between an input voltage and a rectified voltage. During a first time interval after the voltage difference drops to a first preset threshold voltage, the gate voltage control circuit determines whether the voltage difference is less than a second preset threshold voltage, and decides whether to provide the gate voltage to turn on the transistor. When the transistor is turned on, the voltage difference substantially equals to a first reference voltage. And during a second time interval, the gate voltage control circuit regulates the gate voltage to set the voltage difference substantially to a second reference voltage.

Abstract: An alternator and a rectifier thereof are provided. The rectifier includes a transistor and a gate voltage control circuit. A control end of the transistor receives a gate voltage. The gate voltage control circuit generates the gate voltage according to a voltage difference between an input voltage and a rectified voltage. The gate voltage control circuit detects a first time point when the voltage difference is less than a first preset threshold voltage, provides the gate voltage during a first time interval after the first time point to turn on the transistor, and sets the voltage difference to a first reference voltage. The gate voltage control circuit regulates the gate voltage to set the voltage difference to a second reference voltage during a second time interval after the first time interval. The first time interval is independent of a cycle of the input voltage.

Abstract: An intelligent power module packaging structure includes an insulated heat dissipation substrate, a plurality of power devices, a control chip, a lead frame, and an encapsulant. The insulated heat dissipation substrate has a first surface and a second surface opposite to the first surface. The power devices are disposed on the first surface. The control chip is disposed on the first surface. The control chip provides a gate driver function for driving the power devices and a pulse width modulation function. The lead frame is bonded onto the first surface. The power devices are electrically connected to the control chip and the lead frame. The encapsulant at least encapsulates the power devices, the control chip, and a portion of the lead frame, and the second surface is entirely or partially exposed outside the encapsulant.

Abstract: A power device package structure including a first substrate, a second substrate, at least one power device, and a package is provided. A heat conductivity of the first substrate is greater than 200 Wm?1K?1. The power device is disposed on the first substrate, and the second substrate is disposed under the first substrate. A heat capacity of the second substrate is greater than that of the first substrate. The package encapsulates the first substrate, the second substrate, and the power device.

Abstract: A package structure for power devices includes a heat dissipation insulating substrate, a plurality of power devices, a heat dissipation baseplate, and a thermal interface layer. The heat dissipation insulating substrate has a first surface and a second surface which are opposite to each other, and the power devices are coupled to the first surface of the heat dissipation insulating substrate. The heat dissipation baseplate is disposed at the second surface of the heat dissipation insulating substrate, wherein at least one of a surface of the heat dissipation baseplate and the second surface of the heat dissipation insulating substrate has at least one plateau, and the plateau is at least disposed within a projected area of the plurality of power devices. The thermal interface layer is disposed between the second surface of the heat dissipation insulating substrate and the surface of the heat dissipation baseplate.

Abstract: A chip packaging structure includes a heat dissipation substrate, a pre-molded chipset, an interconnection and a second encapsulant. The pre-molded chipset is located on the heat dissipation substrate. The interconnection is located in the packaging structure and electrically connects the heat dissipation substrate and the pre-molded chipset. The second encapsulant covers part of the heat dissipation substrate, part or all of the interconnection, and part or all of the pre-molded chipset. The pre-molded chipset includes a thermally conductive substrate, at least two chips, a patterned circuit, and a first encapsulant. The patterned circuit is located in the pre-molded chipset. At least two chips are electrically connected by the patterned circuit. The first encapsulant covers at least two chips and part or all of the patterned circuit. A manufacturing method of a chip packaging structure is also provided.

Abstract: A semi-finished product of a power device including a semiconductor chip and a first solder pad is provided. The semiconductor chip has an active surface and a rear surface opposite to the active surface. The first solder pad is positioned and fixed on a center of the semiconductor chip. The first solder pad is sheet-shaped. The semiconductor chip is connected to the first solder pad with the active surface. A size of the first solder pad is smaller than a size of the semiconductor chip to expose a portion of the semiconductor chip. A manufacturing method of the semi-finished product of the power device and a manufacturing method of the power device are also provided.

Abstract: A method for manufacturing a power diode including the following steps is provided. (a) A semi-finished product of the power diode is provided. The semi-finished product of the power diode includes a first electrode, a second electrode, a semiconductor chip, and an adhesive material. The semiconductor chip is located between the first electrode and the second electrode. The adhesive material is located on the first electrode and surrounds the semiconductor chip. (b) The semi-finished product of the power diode is placed into a processing chamber. (c) Pressure in the processing chamber is adjusted to a first predetermined pressure and the first predetermined pressure is maintained for a predetermined time. (d) Pressure in the processing chamber is adjusted to a second predetermined pressure. Step (c) to Step (d) are performed at least twice to form the power diode. (e) The power diode is removed from the processing chamber.

Abstract: The disclosure provides an alternator and a rectifier thereof. The rectifier includes a transistor and a gate driving circuit. A control end of the transistor receives a gate voltage. The gate driving circuit generates the gate voltage according to a voltage difference between an input voltage and a rectified voltage. The gate driving circuit detects an initial time point when the voltage difference is smaller than a first preset threshold voltage, provides the gate voltage to turn on the transistor during a first time period after the initial time point, and sets the voltage difference to be equal to a first reference voltage. The gate driving circuit sets the voltage difference to be equal to a second reference voltage through adjusting the gate voltage during a second time period after the first time period.