Abstract: An ion implanting system includes an ion beam generator configured for generating a first ion beam; a mass separation device configured for isolating a second ion beam including required ions from the first ion beam; a holder device configured for holding a plurality of substrates, wherein the holder device and the second ion beam reciprocate relative to each other along a first direction to make the plurality of substrates pass across a projection region of the second ion beam; and a first detector configured for obtaining relevant parameters of the second ion beam. The above ion beam implanting system may increase the ion beam utilization rate. The ion implanting system further comprises a second detector arranged on the holder device which could fully scan across the projection range of the second ion beam and obtaining the relevant parameters of the second ion beam.

Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

Abstract: Techniques for ion beam current measurement, especially for measuring low energy ion beam current, are disclosed. In one exemplary embodiment, the techniques may be realized as an ion beam current measurement apparatus has at least a planar Faraday cup and a magnet device. The planar Faraday cup is close to an inner surface of a chamber wall, and may be non-parallel to or parallel to the inner surface. The magnet device is located close to the planar Faraday cup. Therefore, by properly adjusting the magnetic field, secondary electrons, incoming electrons and low energy ions may be adequately suppressed. Further, the planar Faraday cup may surround an opening of an additional Faraday cup being any conventional Faraday cup. Therefore, the whole ion beam may be received and measured well by the larger cross-section area of at least the planar Faraday cup on the ion beam path.

Abstract: A current branch circuit is electrically coupled with a Faraday cup and an operation amplifier separately. The Faraday cup, the current branch circuit and the operation amplifier are formed as a portion of an ion implanter. When the Faraday cup is electrically coupled with a ground through a conductive structure formed by an ion beam received by the Faraday cup, a current flows from the output of the operation amplifier to the current branch circuit to balance another current flow from the current branch circuit through the Faraday cup to the ground. By dynamically monitoring the voltage of the output of the operation amplifier, current flows through the Faraday cup to the ground and through the resistance of the conductive structure can be dynamically monitored. Accordingly, the difference between the ion current measured by the Faraday cup and the real ion current implanted to the wafer can be dynamically acquired to avoid overdosage of the wafer with the ion beam.

Abstract: Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the starting of the implant process, such that the wafer may be quickly cooled down from room temperature to be essentially equal to the prescribed implant temperature. Further, after the vacuum venting process, the wafer may wait an extra time in the load lock chamber before the wafer is moved out the ion implanter, in order to allow the wafer temperature to reach a higher temperature quickly for minimizing water condensation on the wafer surface. Furthermore, to accurately monitor the wafer temperature during a period of changing wafer temperature, a non-contact type temperature measuring device may be used to monitor wafer temperature in a real time manner with minimized condensation.

Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

Abstract: Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the starting of the implant process, such that the wafer may be quickly cooled down from room temperature to be essentially equal to the prescribed implant temperature. Further, after the vacuum venting process, the wafer may wait an extra time in the load lock chamber before the wafer is moved out the ion implanter, in order to allow the wafer temperature to reach a higher temperature quickly for minimizing water condensation on the wafer surface. Furthermore, to accurately monitor the wafer temperature during a period of changing wafer temperature, a non-contact type temperature measuring device may be used to monitor wafer temperature in a real time manner with minimized condensation.

Abstract: An ion implanter and an ion implant method are disclosed. The ion implanter has an aperture assembly with a variable aperture and is located between an ion source of an ion beam and a holder for holding a wafer. At least one of the size and the shape of the variable aperture is adjustable. The ion beam may be flexibly shaped by the variable aperture, so that the practical implantation on the wafer can be controllably adjusted without modifying an operation of both the ion source and mass analyzer or applying a magnetic field to modify the ion beam. An example of the aperture assembly has two plates, each having an opening formed on its edge such that a variable aperture is formed by a combination of these openings. By respectively moving the plates, the size and the shape of the variable aperture can be changed.

Abstract: A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.

Abstract: An ion implanter and an ion implant method for achieving a two-dimensional implantation on a wafer are disclosed. The ion implanter includes an ion source, a mass analyzer, a wafer driving mechanism, an aperture mechanism, and an aperture driving mechanism. The ion source and the mass analyzer are capable of providing an ion beam. The wafer driving mechanism is configured to drive a wafer along only a first direction. The aperture mechanism has an aperture for filtering the ion beam before the wafer is implanted. The aperture driving mechanism is configured to drive the aperture along a second direction intersecting the first direction. By moving the wafer and the aperture along different directions separately, the projection of the ion beam can achieve a two-dimensional implantation on the wafer. Here, at least one of the directions is optionally parallel to the longer dimension of the two-dimensional cross-section of the ion beam.

Abstract: Initially, an ion beam is formed as an elongated shape incident on a wafer, where the shape has a length along a first axis longer than a diameter of the wafer, and a width along a second axis shorter than the diameter of the wafer. Then, a center of the wafer is moved along a scan path intersecting the ion beam at a movement velocity, and the wafer is rotated around at a rotation velocity simultaneously. During the simultaneous movement and rotation, the wafer is totally overlapped with the ion beam along the first axis when the wafer intersects with the ion beam, and the rotation velocity is at most a few times of the movement velocity. Both the movement velocity and the rotation velocity can be a constant or have a velocity profile relative to a position of the ion beam across the wafer.

Abstract: A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.

Abstract: An ion implanter and method for adjusting the shape of an ion beam are disclosed. After an ion beam is outputted from an analyzer magnet unit, at least one set of bar magnets is used to adjust the shape of the ion beam when the ion beam passes through a space enclosed by the bar magnets. The set of bar magnets can apply a multi-stage magnetic field on the ion beam. Hence, different portions of the ion beam will have different deformations or alterations, because the multi-stage magnetic field will apply a non-uniform force to change the trajectory of ions. Moreover, each bar magnet of the set is powered by one and only one power source, such that the set of bar magnets essentially only can adjust the magnitude of the multi-stage magnetic field. Particular structures and techniques for achieving the multi-stage magnetic field are not limited.

Abstract: To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.

Abstract: An ion implanter and a method for implanting a wafer are provided, wherein the method includes the following steps. First, a wafer has at least a first portion requiring a first doping density and a second portion requiring a second doping density is provided. The first doping density is larger than the second doping density. Thereafter, the first portion is scanned by an ion beam with a first scanning parameter value, and the second portion is scanned by the ion beam with a second scanning parameter value. The first scanning parameter value can be a first scan velocity, and the second scanning parameter value can be a second scan velocity different than the first scan velocity. Alternatively, the first scanning parameter value can be a first beam current, and the second scanning parameter value can be a second beam current different than the first beam current.

Abstract: An ion implantation method for achieving angular uniformity throughout a workpiece and application thereof are provided. The ion beam has at least one beamlet striking the workpiece surface with corresponding incident angles. The workpiece is mapped to an imaginary planar coordinate system. The incident angle of a center beamlet of the ion beam has a projection on the coordinate system forming a projection angle with an axis thereof. A workpiece orientation of the workpiece is adjusted based on the projection angle such that the contribution of each beamlet to the overall ion beam intensity upon striking the workpiece surface is rendered substantially the same from respective directions of each of the coordinate axes.

Abstract: The present invention is a compound sliding seal unit of markedly reduced size and height dimensions which is employed as a discrete assembly for both the passage across and the at-will height adjustment of a mounted, rotatable shaft which extends from the atmospheric environment portion into the vacuum environmental portion of an ion implanter apparatus. The extended, rotatable shaft is typically fashioned as either a rotatable hollow tube or conduit (suitable for the passage of electrical components) and/or as a rotatable support suitable for the mounting of a pivotal scanning radial arm translation system. The manner of construction and the substantially reduced height dimensions of the compound sliding seal unit permits on-demand changes of height for the mounted, rotatable shaft which extends from the atmospheric environment and extends through the compound unit into the confined and limited spatial volume of a vacuum environment within a conventional ion implantation apparatus.

Abstract: Techniques for low temperature ion implantation are disclosed. After a wafer is cooled to a temperature lower than a temperature of an environment outside of a chamber where the wafer is implanted, the cooled wafer is implanted by projecting an ion beam on the cooled wafer with a temperature adjusting apparatus being operated to cool the wafer simultaneously. Hence, heat produced by the ion beam on the implanted wafer is essentially removed by the temperature adjusting apparatus. Then, after the majority of the implanting process is performed, the temperature adjusting apparatus is turned down or off. Hence, during the residual implanting process, heat produced by the ion beam on the implanted wafer at least partially increases the temperature of the implanted wafer so that, after the ion implantation process is finished, the wafer can be moved into the environment with no, or at least less, water condensation.

Abstract: An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.

Abstract: An ion implantation method is provided. The method, before ion implanting, is to rotate the substrate by an angle and shift the scan path of the ion beam with an interlace pitch in the direction perpendicular to the scan direction and on the plane of the substrate. Therefore a plurality of interlaced and not overlapped ion implantation scan lines are formed on the surface of the substrate, so the method can enhance the uniformity of the dose of the ion implantation in the substrate.