Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.
Type:
Grant
Filed:
February 19, 2004
Date of Patent:
January 9, 2007
Assignee:
Advanced Technology Materials, Inc.
Inventors:
Michael B. Korzenski, Thomas H. Baum, Chongying Xu, Eliodor G. Ghenciu
Abstract: A multilayer web article, including a first layer of a porous material, e.g., Tyvek® film, and a second layer overlying and sealed to the first layer. The second layer is non-porous to passage of gas therethrough and includes a peelable film, e.g., of polyethylene, in contact with the first layer of porous material. The peelable film permits peeling removal of the second layer from the first layer to expose the first layer of porous material for passage of gas therethrough. In a specific construction, the web article constitutes one of opposedly facing panels of a lay-flat bag article, in which the facing panels are bonded to one another along superposed edges thereof. After pressurization integrity testing of the bag, the peelable film is peeled away to enable steam - and/or ETO-sterilization of the bag and its contents to be carried out.
Abstract: A method and system for analysis of additives in electrolysis plating solutions, using a flow management system that minimizes loss of plating solutions and decreases sampling time. The system includes at least one analysis chamber, a sampling duct connected to processing tool, a four-way valve positioned between the processing tool and the sampling duct, at least one carrier fluid duct connected to the analysis chamber, at least one actuatable multi-port valve that provides a transference platform between the sampling duct and the at least one carrier fluid duct, and a flow sensor connected to the sampling duct and positioned downstream from the at least one actuatable multi-port valve.
Type:
Grant
Filed:
September 10, 2003
Date of Patent:
January 2, 2007
Assignee:
Advanced Technology Materials, Inc.
Inventors:
Mackenzie E. King, Thomas Chatterton, Richard Bhella
Abstract: The present invention is a collapsible fluid container for handling liquid. The collapsible fluid container has an interior volume for storing the liquid, which defines a main chamber and an auxiliary chamber connected to the main chamber. The auxiliary chamber is positioned to receive a substance. A fitment is sealed to the collapsible fluid container that defines a port communicating with the interior volume of the fluid container.
Type:
Grant
Filed:
June 16, 2004
Date of Patent:
January 2, 2007
Assignee:
Advanced Technology Materials, Inc.
Inventors:
Kevin O'Dougherty, Robert Andrews, John Titus
Abstract: The present invention is a manufacturing system including a hazard zone and a non-hazard zone. The system includes a storage device, located in the hazard zone, for electrically storing information. The system further includes a communication device, also located in the hazard zone, for storing information to and reading information from the storage device. In the non-hazard zone, a controller is in electrical communication with the communication device. The controller controls the system based on information read from the storage device by the communication device. To limit electrical energy passing to the communication device, an intrinsic safety barrier located in the non-hazard zone is connected between the communication device and the controller device.
Abstract: A multicomponent fluid composition monitoring and compositional control system, in which a component analysis is effected by titration or other analytical procedure, for one or more components of interest, and a computational means then is employed to determine and responsively adjust the relative amount or proportion of the one or more components in the multicomponent fluid composition, to maintain a predetermined compositional character of the multicomponent fluid composition. The system is usefully employed in semiconductor manufacturing photoresist and post-etch residue removal, in which the cleaning medium is a semi-aqueous solvent composition, and water is the monitored and responsively adjusted component.
Type:
Grant
Filed:
October 23, 2002
Date of Patent:
December 26, 2006
Assignee:
Advanced Technology Materials, Inc.
Inventors:
Russell Stevens, Thomas Kloffenstein, Todd Aycock, Joseph W. Evans, Richard Bhella
Abstract: The present invention relates to a method for mathematically re-calibrating and adjusting an initial concentration analysis model that suffers from electrochemical measurement errors caused by surface state changes in the working/counter/reference electrode after extended usage. Specifically, such recalibration method reimburses long-term drift in the electrochemical measurements based on a single point testing.
Type:
Grant
Filed:
April 27, 2004
Date of Patent:
November 28, 2006
Assignee:
Advanced Technology Materials, Inc.
Inventors:
Jianwen Han, Mackenzie E. King, Glenn Tom, Steven Lurcott
Abstract: The present invention relates to a semiconductor processing system that employs infrared-based thermopile detector for process control, by analyzing a material of interest, based on absorption of infrared light at a characteristic wavelength by such material. Specifically, an infrared light beam is transmitted through a linear transmission path from an infrared light source through a sampling region containing material of interest into the thermopile detector. The linear transmission path reduces the risk of signal loss during transmission of the infrared light. The transmission path of the infrared light may comprise a highly smooth and reflective inner surface for minimizing such signal loss during transmission.
Abstract: A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for cleaning of semiconductor wafers to remove post-ashing residues therefrom.
Type:
Grant
Filed:
June 24, 2003
Date of Patent:
October 10, 2006
Assignee:
Advanced Technology Materials, Inc.
Inventors:
Michael B. Korzenski, Chongying Xu, Thomas H. Baum, David Minsek, Eliodor G. Ghenciu
Abstract: Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.
Type:
Grant
Filed:
July 31, 2003
Date of Patent:
October 10, 2006
Assignee:
Advanced Technology Materials, Inc.
Inventors:
Chongying Xu, Thomas H. Baum, Michael B. Korzenski
Abstract: A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.
Type:
Grant
Filed:
December 13, 2001
Date of Patent:
September 19, 2006
Assignee:
Advanced Technology Materials, Inc.
Inventors:
Chongying Xu, Thomas H. Baum, Alexander S. Borovik, Ziyun Wang, James T. Y. Lin, Scott Battle, Ravi K. Laxman
Abstract: A gas storage and dispensing system, including multi-vessel arrays of gas dispensing vessels that require successive change-over to provide ongoing supply of gas to a gas-consuming process, with a pump coupled in gas flow communication with the array. The system is provided with capability for time delay auto-switchover sequencing of the switchover operation in which an endpoint limit sensing of an on-stream gas dispensing vessel is responsively followed by termination of gas flow to the pump, inactivation of the pump, autoswitching of vessels, reinitiation of gas flow to the pump and reactivation of the pump. The system minimizes the occurrence of pressure spikes at the pump outlet in response to pressure variation at the pump inlet incident to switchover of gas supply from one vessel to another in the multi-vessel array.
Abstract: A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed through a region of the clean room. The facility includes an air exhaust treatment apparatus arranged to (i) receive air exhaust after flow thereof through said region of said clean room, (ii) produce a treated air exhaust, and (iii) recirculate the treated air exhaust to an ambient air environment in the facility, e.g., to the gray room of the facility.
Type:
Grant
Filed:
September 26, 2003
Date of Patent:
September 12, 2006
Assignee:
Advanced Technology Materials, Inc.
Inventors:
W. Karl Olander, Joseph D. Sweeney, Luping Wang
Abstract: Chemical vapor deposition (CVD) precursor compositions for forming metal oxide high dielectric constant (?) thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(?-diketonate)2(OR)2, wherein M is Hf, Zr or Ti, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.
Type:
Grant
Filed:
July 17, 2001
Date of Patent:
August 22, 2006
Assignee:
Advanced Technology Materials, Inc.
Inventors:
Thomas H. Baum, Jeffrey F. Roeder, Chongying Xu, Bryan C. Hendrix
Abstract: The present invention relates to a process analyzer for analyzing composition of sample electrochemical deposition solutions, comprising at least one microelectrode having a radius of not more than about 5 ?m. The process analyzer preferably comprises: (1) two or more independent analytical modules for analyzing fluid samples, (2) a primary manifold communicatively connected to the analytical modules for introducing fluid samples thereinto, and (3) a computational device communicatively associated with the analytical modules for colleting and processing analytical data therefrom, and therefore can be used to conduct automatic and simultaneous analysis of two or more sample solutions.
Abstract: A flat-panel display is fabricated by a process in which a spacer (24) having a rough face (54 or 56) is positioned between a pair of plate structure (20 and 22). When electrons strike the spacer, the roughness in the spacer's face causes the number of secondary electrons that escape the spacer to be reduced, thereby alleviating positive charge buildup on the spacer. As a result, the image produced by the display is improved. The spacer facial roughness can be achieved in various ways such as providing suitable depressions (60, 62, 64, 66, 70, 74, or 80) or/and protuberances (82, 84, 88, and 92) along the spacer's face.
Inventors:
Roger W. Barton, Kollengode S. Narayanan, Bob L. Mackey, John M. Macaulay, George B. Hopple, Donald R. Schropp, Jr., Michael J. Nystrom, Sudhakar Gopalakrishnan, Shiyou Pei, Xueping Xu
Abstract: A method of synthesizing an aminosilane source reagent composition, by reacting an aminosilane precursor compound with an amine source reagent compound in a solvent medium comprising at least one activating solvent component, to yield an aminosilane source reagent composition having less than 1000 ppm halogen.
Type:
Grant
Filed:
March 29, 2002
Date of Patent:
August 1, 2006
Assignee:
Advanced Technology Materials, Inc.
Inventors:
Alexander S. Borovik, Ziyun Wang, Chongying Xu, Thomas H. Baum, Brian L. Benac
Abstract: In an embodiment, an apparatus includes a conduit. The apparatus also includes two or more flexible compartments. Each of the two or more flexible compartments has an interior wall defining a storage area configured to house a substance. Each of the two or more flexible compartments includes a distal end and a proximal end. The proximal ends of the two or more flexible compartments are coupled to the conduit such that the conduit defines a passageway between the two or more flexible compartments. A diameter of the storage area at the proximal end is less than a diameter of the storage area at the distal end.
Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.
Type:
Grant
Filed:
October 17, 2002
Date of Patent:
July 25, 2006
Assignee:
Advanced Technology Materials, Inc.
Inventors:
Frank Dimeo, Jr., Philip S. H. Chen, Jeffrey W. Neuner, James Welch, Michele Stawasz, Thomas H. Baum, Mackenzie E. King, Ing-Shin Chen, Jeffrey F. Roeder
Abstract: One or more PTFE films are heated to greater than 150 degrees centigrade (C) and for a time greater than 20 hours, then the PTFE films are cooled. The PTFE films may be heated to temperatures greater than 200° C. and less than 250° C. and most preferably heated to a temperature of about 228° C. The PTFE films may be kept at a temperature for greater than 50 hours or most preferably kept at a temperature for around 100 hours. The PTFE films may be heat processable PTFE fluoropolymer films and may have a number of heat affected zones. The heat affected zones may be created before or after heat treating. The heat affected zones are generally caused by welding two or more PTFE films together, usually under pressure. An “optimal” temperature and “optimal” time period are determined at which heat processed polytetrafluoroethylene (PTFE) fluoropolymers should be heat treated.