Abstract: Apparatus and method for delivery of dilute active fluid, e.g., to a downstream active fluid-consuming process unit of a semiconductor manufacturing plant. The delivery system includes an active fluid source, a diluent fluid source, a fluid flow metering device for dispensing of the active fluid at a predetermined flow rate, a mixer arranged to mix active gas from the active fluid source that is dispensed at such predetermined flow rate by the fluid flow metering device, with diluent fluid to form a diluted active fluid mixture, and a monitor arranged to measure concentration of active fluid in the diluted active fluid mixture, and responsively adjust the fluid flow metering device, to control the dispensing rate of the active fluid, and maintain a predetermined concentration of active fluid in the diluted active fluid mixture.

Abstract: A process system adapted for processing of or with a material therein. The process system includes: a sampling region for the material; an infrared photometric monitor constructed and arranged to transmit infrared radiation through the sampling region and to responsively generate an output signal correlative of the material in the sampling region, based on its interaction with the infrared radiation; and process control means arranged to receive the output of the infrared photometric monitor and to responsively control one or more process conditions in and/or affecting the process system.

Abstract: A gas cabinet including an enclosure containing at least one gas supply vessel and flow circuitry coupled to the gas supply vessel(s). The flow circuitry is constructed and arranged to flow dispensed gas from an on-stream gas supply vessel to multiple sticks of the flow circuitry, with each of the multiple sticks being joined in gas flow communication to a respective gas-utilizing process unit. The flow circuitry is valved to enable sections of the flow circuitry associated with respective ones of the multiple sticks to be isolated from other sections of the flow circuitry, so that process gas can be flowed to one or more of the sticks, while other sticks are being evacuated and purged, or otherwise are closed to dispensed gas flow therethrough.

Abstract: A fluid storage and delivery system utilizing a porous metal matrix that comprises at least one Group VIIIB metal therein. In one embodiment, the porous metal matrix forms a solid-phase metal adsorbent medium, with an average pore diameter of from about 0.5 nm to about 2 nm and a porosity of from about 10% to about 30%, which is particularly useful for sorptively storing and desorptively dispensing a low vapor pressure fluid, e.g., ClF3, HF, GeF4, Br2, etc. In another aspect, the porous metal matrix forms a solid-phase metal sorbent with an average pore diameter of from about 0.25 ?m to about 500 ?m and a porosity of from about 15% to about 95%, which can effectively immobilize low vapor pressure liquefied gas.

Abstract: A system for dispensing liquid to a manufacturing process from a container including an outer container and a flexible inner container occupied by the liquid. A flow passage provides fluid communication between an interior of the inner container and the manufacturing process. A pressurized fluid source is in fluid communication with a space between inner walls of the outer container and the inner container. The pressurized fluid source causes fluid under pressure to flow into the space between the inner walls of the outer container and the inner container to force liquid out of the inner container to the manufacturing process via the flow passage. A pressure sensor is positioned to sense pressure in the flow passage. A controller responsive to the pressure sensor controls the pressure in the flow passage by modulating the pressure from the pressurized fluid source.

Abstract: A method of forming an A site deficient thin film manganate material on a substrate from corresponding precursor(s), comprising liquid delivery and flash vaporization thereof to yield a precursor vapor, and transporting the precursor vapor to a chemical vapor deposition reactor for formation of an A site deficient manganate thin film on a substrate. The invention also contemplates a device comprising an A site deficient manganate thin film, wherein the manganate layer is formed on the substrate by such a process and is of the formula LaxMyMnO3, where M=Mg, Ca, Sr, or Ba, and (x+y)<1.0, and preferably from about 0.5 to about 0.99.

Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.

Abstract: Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.

Abstract: The present invention relates to apparatus and method for re-circulating high viscosity liquids. The apparatus comprises a recirculating probe coupled to a fluid storage and dispensing vessel by a connector, and the recirculating probe comprises: (a) a dip tube defining an output flow path; (b) an output port; (c) a recirculating port; and (d) a return flow path. The output flow path and the return flow path preferably have substantially equal cross-sectional areas, which reduce or eliminate the unbalance between the discharge pressure in the output line and that in the re-circulation line, and prevent premature wearing-out of the dispensing/recirculating pump.

Abstract: The present invention relates to methods for removing the matrix effects caused by variance in copper concentration and acidity during measurement of the organic additive concentration in a sample copper plating solution.

Abstract: An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a disilyl moiety of the formula wherein x is an integer having a value of from 0 to 4 inclusive. These precursors are useful for the formation of dielectric films having dielectric constants on the order of ˜3 and less, and a hardness exceeding ˜1 GigaPascals.

Abstract: A gas cabinet assembly for dispensing of gas to a process facility such as a semiconductor manufacturing tool. A purge gas dry scrubber is integrated with the gas flow circuitry and a venturi pump in the gas cabinet. Purge gas is flowed through the flow circuitry in the gas cabinet subsequent to on-stream dispensing of process gas through such flow circuitry, and forms a purge effluent including the residual process gas. The purge effluent is flowed through a dry scrubber unit to sorptively remove the process gas species from the purge effluent. The resultant process gas-depleted purge effluent is vented from the gas cabinet, e.g., into the ducting of the house exhaust system of the process facility. Monitoring of the relative depletion of the dry scrubbing medium in the dry scrubber may be carried out with endpoint detection, e.g., using colorimetric change techniques, toxic gas monitor devices, or PLC/CPU arrangements.

Abstract: Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.

Abstract: A thermopile-based detector for monitoring and/or controlling semiconductor processes, and a method of monitoring and/or controlling semiconductor processes using thermopile-based sensing of conditions in and/or affecting such processes.

Abstract: A method of preventing oxygen deficiency in a ferroelectric or high ? film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelectric or high ? film material in the vicinity and at the top surface thereof, or else provide the ferroelectric or high ? film material in the vicinity and at the top surface thereof with a surplus of oxygen. In the latter case, the deposition formation of the top electrode layer on the ferroelectric or high ? film material depletes the over-stoichiometric excess of the oxygen in the film material, to yield a device structure including an electrode on a film material having a proper stoichiometry, e.g., of PbZrTiO3.

Abstract: A low temperature CVD process for deposition of bismuth-containing ceramic thin films suitable for integration to fabricate ferroelectric memory devices. The bismuth-containing film can be formed using a tris(?-diketonate) bismuth precursor. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.

Abstract: A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8 alkyl, C1–C8 perfluoroalkyl, alkylsilyl and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSi(NR1R2)4-x, wherein H is hydrogen; x is from 0 to 3; Si is silicon; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8 alkyl, and C1–C8 perfluoroalkyl. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.

Abstract: A gas supply system arranged for dispensing of gas at a predetermined flow rate. The system employs a gas dispensing flow circuitry arranged for dispensing gas at selectively variable gas flow conductance conditions, to maintain the flow rate of the dispensed gas at a predetermined, e.g., constant, value in the operation of the system. The gas dispensing flow circuitry may include an array of dispensed gas flow passages, each of a differing conductance, or alternatively a variable conductance gas flow passage equipped with a variable conductance assembly for modulating the gas flow conductance of the passage, in response to sensed pressure of the gas or other system parameter. The system permits the flow rate of a dispensed gas to be maintained at a consistent desired level, despite the progressive decline in source gas pressure as the gas source vessel is depleted in use.

Abstract: A fluid storage and dispensing apparatus including a fluid storage and dispensing vessel having a rectangular parallelepiped shape, and an integrated gas cabinet assembly including such fluid storage and dispensing apparatus and/or a point-of-use ventilation gas scrubber in the vented gas cabinet. By the use of physical adsorbent and chemical sorbent media, the gas cabinet can be enhanced in safety of operation, e.g., where the process gas supplied from the gas cabinet is of a toxic or otherwise hazardous character.

Abstract: Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to constitute tantalum/silicon source reagents. The precursors of the invention are advantageously employed in semiconductor manufacturing applications to form diffusion barriers in connection with copper metallization of the semiconductor device structure.