Abstract: The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.

Abstract: A system is described for interconnecting a first optical component and a second optical component in which the first optical component is guided passively into precise alignment with the second optical component. The system includes a base and a guide structure. The base has a first surface exposed for contact with a front surface of the first optical component and a second surface configured to contact a front surface of the second optical component, and defines a transparent optical aperture extending from the first base surface to the second base surface and aligned with respect to the optical axis. The guide structure is supported by the base in fixed registration with respect to the optical axis and is exposed for contact with an exposed peripheral surface of the first optical component at three or more spaced apart discrete locations.

Abstract: An assembly comprising a heat generating electronic device and a heat sink is provided with an intermediate gradient region between them. This intermediate region comprises a material having a coefficient of thermal expansion substantially matching the coefficient of thermal expansion of the heat generating electronic device, and a thermal conductivity greater than the thermal conductivity of the electronic device but less than the thermal conductivity of the heat sink. Provision of this intermediate layer substantially reduces stress on the electronic device caused by thermal cycling.

Abstract: An image sensor system and methods of making such a system are described. The image sensor system includes a color filter array that is formed by a color filter process that incorporates a bottom antireflection coating. The bottom antireflection coating forms a protective layer that protects exposed areas of the active image sensing device structure during formation of the color filter array and, thereby, preserves the intrinsic transmission characteristics of the active image sensing device structure. The bottom antireflection coating also reduces degradation of metal structures (e.g., bonding pads) and pixel edges at the exposed surface of the active image sensing device structure. In addition, the bottom antireflection coating provides a reliable adhesive surface for the color filter array, substantially eliminating lifting of the color filter array resist structures.

Abstract: A computation circuit operates in the modulation domain to generate a signal having phase modulation proportional to the ratio of the dividend (numerator) signal to the divisor (denominator) signal. The phase modulated signal may be demodulated by a phase demodulator to produce a baseband quotient signal. The divisor signal maintains inverse proportional control of the modulation gain of the modulator by varying the carrier injection level, resulting in higher bandwidth and accuracy, and lower drift and offset compared to traditional analog computation techniques. The circuit may contain all linear components, even though the division function is a non-linear function. The circuit and method operate when the input signals are analog or both are in the modulation domain.

Abstract: A novel terminating differential bus receiver with automatic compensation for process, voltage, and temperature variation is presented. A termination circuit is connected internal to the integrated circuit to the input of a differential receiver in parallel with a transmission line connectable to the receiver. Both the termination circuit and the differential receiver are implemented with at least one p-channel transistor and at least one n-channel transistor, such that the p-channel transistors of the termination circuit and receiver and the n-channel transistors of the termination circuit and receiver are ratioed to vary similarly under PVT variation.

Abstract: A method for making high quality InGaAsN semiconductor devices is presented. The method allows the making of high quality InGaAsN semiconductor devices using a single MOCVD reactor while avoiding aluminum contamination.

Abstract: A semiconductor isolation structure. The semiconductor isolation structure includes a substrate. A first device and a second device are formed within the substrate. An isolation region is formed within the substrate between the first device and the second device. The isolation region includes a deep region which extends into the substrate. The deep region includes a deep region cross-sectional area. A shallow region extends to the surface of the substrate. The shallow region includes a shallow region cross-sectional area. The deep region cross-sectional area is greater than the shallow region cross-sectional area. For an alternate embodiment, the deep region includes an oxide and the shallow region includes a protective wall. The protective wall can be formed from an oxide and a nitride.

Abstract: A system and method of computed tomography is disclosed. The method includes acquiring at least one projection but less than all projections to be used in reconstruction of an unknown object and processing the at least one projection for reconstruction of the unknown object. After processing each projection is discarded. Projections are acquired until all projections have been processed. An estimate of the unknown object may be generated during the processing of each of the projections.

Abstract: A data analyzer system measures the duration of a service disruption event in an asynchronous transfer mode (ATM) data transmission channel carrying an ATM stream of identifiable data cells in a defined order. The data analyzer system determines whether or not any of the data cells have been corrupted in transmission through the data transmission channel during transmission disruption. A timer determines a service disruption event duration upon elapse of a predetermined guard time.

Abstract: A system for accurately aligning a plurality of optical elements includes a wafer into which are formed a plurality of holes. The holes are formed into an array and are each designed to accept an optical element. After each optical element is located and inserted into a respective hole, the optical elements are polished to be planar with the surface of the wafer. The optical elements may include fibers and lenses. The system may also include a wafer containing optical fibers optically aligned with a wafer containing lenses. The optical fibers direct light into corresponding lenses, which collimate and launch the light into an optical switch.

Abstract: Asymmetric support for high frequency transmission lines. An asymmetrical support structure coaxially supports a center conductor over a ground plane using a dielectric material. Absorbing material between the dielectric and the outer conductor reduces the effects of high order modes.

Abstract: A switch device and a method of manufacture are provided that includes providing two substrates. The two substrates collectively include a fluid conductor switch device structure and a trench surrounding the fluid conductor switch device structure. An inner seal material is deposed on one of the substrates and an outer seal material is deposited in the trench. The substrates are joined to one another using the inner seal material and a peripheral hermetic seal is formed between the substrates using the outer seal material.

Abstract: An apparatus and method for signal processing in a root-mean-square (RMS) meter. In representative embodiments, the root-mean-square (RMS) meter includes an RMS converter having a converter input and a converter output. The RMS converter converts a time varying signal applied to the converter input to a signal at the converter output. The value of the signal at the converter output is indicative of the RMS value of the applied signal. The signal at the converter output comprises a non-time varying component and a time varying component as determined by a time constant of the RMS converter. The RMS meter further includes an inverting amplifier having an inverter input and an inverter output. The converter output is connected to the inverter input. In addition, the RMS meter includes a switch having first, second, and central contacts. The converter output is connected to the first contact, and the inverter output is connected to the second contact.

Abstract: An edge detector with sub-micron accuracy. The edge detector comprises two single mode optical fibers with an optical path between them. One fiber is coupled to a laser light source, and creates a light beam. The other fiber is coupled to an optical power detector. The optical power reaching the optical power detector is determined by how much of the light beam is obscured by an object. Thus the position of the edge of the object may be determined from the optical power measured by the detector. The edge of an object may be positioned automatically according to the optical power measured by the detector.

Abstract: In embodiment, the present invention is directed to a PLL phase demodulator that utilizes feed-forward error correction. The feed-forward error correction may occur by calibrating an equalizer to possess transfer function that emulates the modulation response curve of the VCO of the PLL phase demodulator. In operation, the equalizer may receive the filtered and integrated version of the error signal produced by the phase detector of the PLL. The equalizer filters the received signal according to the calibrated transfer function. The output of the equalized is provided to a adder to combine the equalized signal with the error signal produced by the phase detector. A similar arrangement including a suitably calibrated equalizer may be utilized to address phase tracking error in a PLL frequency demodulator.

Abstract: The inventive mechanism monitors ATM traffic load by service type. The inventive mechanism receives each cell being transported over a backbone or link of an ATM network. The mechanism creates a table, which includes the VPI/VCI tags and the respective service type for each tag, to determine the numbers of cells being transported for each of the service types. The mechanism forms the table by monitoring connection/call setup-request cells and their associated answer cells, which identify the service type for each VPI/VCI tag. The inventive mechanism may set alarm levels to trigger based upon the pipe bandwidth usage by the different service types.

Abstract: A modular system interface is provided. The apparatus includes a main panel that is configured to be attached to a rack and includes a plurality of cut-outs. A plurality of sub-panels are configured to be attachable to the main panel, spanning across the respective cut-out. Each sub-panel supports one predetermined type of connector. The present invention can also be viewed as a method for providing a modular system interface. In this regard, the method can be broadly summarized by the steps of providing a main panel configured to be attachable to a rack and including a plurality of cut-outs. The method includes providing a plurality of sub-panels configured to be attachable to the main panel across a respective the cut-out, wherein each sub-panel supports a predetermined type of connector.

Abstract: Signal communication structures and methods for making the same are provided. One embodiment of the present invention comprises a signal communication structure. The structure comprises a signal communication element having a signal communication surface, an integrated circuit chip, and a substrate. A surface of the signal communication element other than the signal communication surface is physically coupled to a surface of the integrated circuit chip. In addition, another surface of the integrated circuit chip is communicatively coupled to the substrate. Furthermore, the size of the signal communication surface is greater than the size of the surface of the integrated circuit chip to which the signal communication element is physically coupled.

Abstract: The invention relates to a method of tuning a laser, comprising the steps of: providing a laser beam to an external cavity, the laser beam traveling through material along a path between a cavity end element and a tuning element, the path having an optical path length, selecting at least one mode of the laser by introducing a dispersion element in the path of the laser, rotating the tuning element about a pivot axis theoretically defined by the intersection of the surface planes of the cavity end element, the dispersion element and the tuning element to tune the laser, changing the optical path length of the path in order to at least partly compensate a shift between the real position of the pivot axis and the theoretically defined position.