Abstract: This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Additives are used to reduce the dishing on large and small feature sizes (large bond pad as well as fine line structures) without retarding the tungsten removal rate.

Abstract: This invention discloses the use of sulfite salts as catalysts to make polyurethane polymers. In particular, this invention discloses the use of metal salts such as alkali metal salts as well as alkyl ammonium salts such as tetralkyl ammonium salts as catalysts to make polyurethane polymers. The sulfite salts are useful to make a wide variety of polyurethane polymers and polyurethane foam polymer products such as flexible polyurethane foam polymers, rigid foam polyurethane polymers, semi-rigid polyurethane polymer, microcellular polyurethane polymer, and spray foam polyurethane polymer as well as any polymeric material that requires the assistance of catalysts to promote the formation of urethane and urea bonds such as those found in polyurethane emusions for paints, coatings, protective coatings, lacquer, etc as well as other polyurethane or polyurethane containing materials such as thermoplastic polymers, thermoplastic polyurethane polymers, elastomers, adhesives, sealants, etc.

Abstract: A steam-hydrocarbon reforming process utilizing a prereformer where a portion of the effluent from the prereformer is conditioned and the C2+ hydrocarbon content in the conditioned effluent measured. The molar flow rate of steam to the prereformer is increased or decreased responsive to measuring the C2+ hydrocarbon content of the conditioned effluent.

Abstract: A composition and method for producing a tertiary amine is disclosed. The tertiary amine is contacted with an inert gas. The inert gas is nitrogen or more preferably argon. The amine composition is useful in producing polyurethane foam with lower levels of chemical emissions particularly lower emissions of toxic chemicals.

Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.

Abstract: A method for lessening an initial pressure spike in a receiving tank caused by high pressure residual H2-containing gas contained between a control valve and a block valve when dispensing the residual H2-containing gas into the receiving tank. The block valve is briefly closed before the pressure in the transfer line decreases below a set pressure, thereby lessening the pressure spike in the receiving tank.

Abstract: Described herein is a method of and system for fractionating and liquefying a natural gas feed stream. The natural gas is first fractionated in a scrub column. The overhead vapor from the scrub column is cooled, condensed and divided to form a first, a second and at least one further stream of liquefied first overhead. The first stream of liquefied first overhead is returned to the scrub column as a reflux stream. The second stream of liquefied first overhead forms an LNG product. The further stream of liquefied first overhead is used to provide or generate reflux for a de-methanizer column used to fractionate the bottoms liquid from the scrub column.

Abstract: Embodiments of the present invention provide improved shell-side fluid distribution in coil wound heat exchanger system and methods therefor. The fluid distribution system includes a system having a plurality of distribution arms having inner and outer cavities and valves to control the flow of shell-side fluid to control radial temperature profiles in a coil wound heat exchanger having multiple bundles of tubes.

Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Abstract: A pressure swing adsorption process for an adsorption system having 12 adsorption beds, the process having a cycle with 5 pressure equalization steps. Background is provided for the various pressure swing adsorption cycle steps.

Abstract: A composition for cleaning integrated circuit substrates, the composition comprising: water; an oxidizer comprising an ammonium salt of an oxidizing species; a corrosion inhibitor comprising a primary alkylamine having the general formula: R?NH2, wherein R? is an alkyl group containing up to about 150 carbon atoms and will more often be an aliphatic alkyl group containing from about 4 to about 30 carbon atoms; optionally, a water-miscible organic solvent; optionally, an organic acid; optionally, a buffer speicies; optionally, a fluoride ion source; and optionally, a metal chelating agent.

Abstract: Etching compositions and method of using the etching compositions comprising potassium hydroxide; one or more than one additional alkaline compounds selected from the group consisting of TEAH, TMAF and NH4OH; and water; or etching compositions comprising one or more than one inorganic alkali basic hydroxides selected from the group consisting of potassium hydroxide, cesium hydroxide, sodium hydroxide, rubidium hydroxide, or lithium hydroxide; optionally one or more than one additional alkaline compounds; water; and optionally one or more corrosion inhibitors; wherein the composition preferentially etches silicon present on a substrate as compared to silicon dioxide present on said substrate.

Abstract: A photoresist or semiconductor manufacturing residue stripping and cleaning composition comprising water, one or more alkaline compounds, one or more corrosion inhibitors, and one or more oxidized products of one or more antioxidants, the method of making the composition and the method of using the composition.

Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.

Abstract: There is provided a guard structure for a gas cylinder assembly, the gas cylinder assembly comprising a gas cylinder body and a valve, the gas cylinder body including a base and a neck to which a proximal end of the valve is connected in use, the guard structure being securable to the gas cylinder assembly and comprising a guard body arranged, in use, to surround the valve, wherein the guard body further comprises a dependent lip extending around substantially the entire perimeter of the guard body, the dependent lip being located and arranged to be graspable by at least one user to enable the gas cylinder assembly to be lifted and/or manoeuvred.

Abstract: Embodiments of the present invention provide systems and methods for efficiently producing both a low-pressure ozone stream and high-pressure oxygen stream using a single air separation unit. The low-pressure ozone stream and high-pressure oxygen stream can be produced with significant energy savings and can be used in variety of applications, including the extraction of precious metals from ore with aqueous oxidation reactors and high-pressure oxidation reactors.

Abstract: Organoaminosilanes, such as without limitation di-iso-propylaminosilane (DIPAS), are precursors for the deposition of silicon containing films such as silicon-oxide and silicon-nitride films. Described herein are methods to make organoaminosilane compounds, or other compounds such as organoaminodisilanes and organoaminocarbosilanes, via the catalytic hydrosilylation of an imine by a silicon source comprising a hydridosilane.

Abstract: A hydrometallurgical system and process with a hydrometallurgical processing circuit integrated with an ion transport membrane assembly. The ion transport membrane assembly provide oxygen to the hydrometallurgical processing circuit.

Abstract: There is provided a protection structure for a gas cylinder assembly comprising a gas cylinder body and a valve. The gas cylinder body includes a base and a neck to which a proximal end of the valve is connectable in use. The protection structure comprises first and second structural sections, the first section being connectable to the valve such that the second section is spaced from the valve by the first section. Further, in use, the second section is arranged to transfer impact forces to the first section, and the second section is arranged to deform with respect to the second section in response to said impact forces to reduce the peak impact force on the valve.