Patents Assigned to Air Water, Inc.
  • Patent number: 10563307
    Abstract: A method for manufacturing a substrate with less warpage includes a step of forming SiC film 121 on a surface of Si substrate 11, a step of removing bottom surface RG2 which is at least a part of the Si substrate 11 contacting with the SiC film 121, and a step of forming another SiC film on a surface of SiC film 121 after the step of removing the bottom surface RG2.
    Type: Grant
    Filed: June 9, 2017
    Date of Patent: February 18, 2020
    Assignee: AIR WATER INC.
    Inventors: Hidehiko Oku, Ichiro Hide
  • Patent number: 10400086
    Abstract: A thermal expandability adjuster is provided which contains a glycoluril derivative compound represented by formula (1) below. The thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product of a thermoset resin composition used for an insulating resin layer or the like and is effective for suppressing deformation of a circuit substrate due to heating. Compounding the above thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product obtained by curing a thermoset resin composition and it is therefore possible to provide a member that exhibits small deformation due to heat.
    Type: Grant
    Filed: January 28, 2016
    Date of Patent: September 3, 2019
    Assignee: AIR WATER INC.
    Inventors: Yousuke Ebihara, Osamu Koyama
  • Patent number: 10364338
    Abstract: A thermal expandability adjuster is provided which contains a glycoluril derivative compound represented by formula (1) below. The thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product of a thermoset resin composition used for an insulating resin layer or the like and is effective for suppressing deformation of a circuit substrate due to heating. Compounding the above thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product obtained by curing a thermoset resin composition and it is therefore possible to provide a member that exhibits small deformation due to heat.
    Type: Grant
    Filed: January 28, 2016
    Date of Patent: July 30, 2019
    Assignee: AIR WATER INC.
    Inventors: Yousuke Ebihara, Osamu Koyama
  • Patent number: 10354864
    Abstract: A compound semiconductor substrate having a desired quality is provided. A compound semiconductor substrate has an SiC (silicon carbide) layer, an AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a first GaN (gallium nitride) layer formed on the Al nitride semiconductor layer, a first AlN intermediate layer formed on the first GaN layer in contact with the first GaN layer, and a second GaN layer formed on the first AlN intermediate layer in contact with the first AlN intermediate layer.
    Type: Grant
    Filed: October 17, 2016
    Date of Patent: July 16, 2019
    Assignee: Air Water Inc.
    Inventors: Mitsuhisa Narukawa, Akira Fukazawa, Hiroki Suzuki, Keisuke Kawamura
  • Patent number: 10252965
    Abstract: A vinylbenzylated phenol compound represented by General Formula (1) below is provided. (In General Formula (1), Ar0 is a bifunctional phenol compound residue having one or more monocyclic or polycyclic aromatic nuclei, R1 to R5 may be the same or different and are each hydrogen or a methyl group, and p is an integer of 1 to 4.
    Type: Grant
    Filed: November 8, 2016
    Date of Patent: April 9, 2019
    Assignee: AIR WATER INC.
    Inventor: Shinji Onda
  • Patent number: 10186585
    Abstract: A semiconductor device which can reduce power consumption and a method for manufacturing the same are provided. A semiconductor device comprises an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, an n-type GaN (gallium nitride) layer formed on the surface of the AlN layer, a first electrode formed at the surface side of the GaN layer, and a second electrode formed at the reverse face side of the Si substrate 1. The magnitude of electrical current which flows between the first electrode and the second electrode depends on electrical voltage between the first electrode and the second electrode.
    Type: Grant
    Filed: August 12, 2015
    Date of Patent: January 22, 2019
    Assignee: Air Water Inc.
    Inventors: Akira Fukazawa, Sumito Ouchi
  • Patent number: 10186421
    Abstract: A composite semiconductor substrate being able to improve voltage withstanding and crystalline quality is provided. A composite semiconductor substrate is equipped with an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, a composite layer formed on the surface of the AlN layer, and a GaN (gallium nitride) layer formed on the surface of the composite layer. The composite layer includes an AlN (aluminum nitride) layer and a GaN layer formed on the surface of the AlN layer. In at least one composite layer, the average density of C and Fe in the GaN layer is higher than the average density of C and Fe in the AlN layer.
    Type: Grant
    Filed: January 14, 2016
    Date of Patent: January 22, 2019
    Assignee: AIR WATER INC.
    Inventors: Akira Fukazawa, Mitsuhisa Narukawa, Keisuke Kawamura
  • Patent number: 10059654
    Abstract: There is provided a method for producing, at a high yield, a composition containing 3-chloro-4-methoxybenzylamine hydrochloride (CMBA-HCl) in which the purity of CMBA-HCl is high. This method comprises a chlorination step involving a chlorination reaction that generates CMBA-HCl from 4-methoxybenzylamine hydrochloride using hydrogen peroxide and hydrochloric acid. There is also provided a CMBA-HCl-containing composition which is produced by the aforementioned production method and in which the purity of CMBA-HCl is high.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: August 28, 2018
    Assignee: AIR WATER INC.
    Inventors: Takashi Fujimoto, Keiichi Yokota, Takahiro Ide
  • Publication number: 20180053647
    Abstract: A composite semiconductor substrate being able to improve voltage withstanding and crystalline quality is provided. A composite semiconductor substrate is equipped with an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, a composite layer formed on the surface of the AlN layer, and a GaN (gallium nitride) layer formed on the surface of the composite layer. The composite layer includes an AlN (aluminum nitride) layer and a GaN layer formed on the surface of the AlN layer. In at least one composite layer, the average density of C and Fe in the GaN layer is higher than the average density of C and Fe in the AlN layer.
    Type: Application
    Filed: January 14, 2016
    Publication date: February 22, 2018
    Applicant: AIR WATER INC.
    Inventors: Akira FUKAZAWA, Mitsuhisa NARUKAWA, Keisuke KAWAMURA
  • Publication number: 20180030242
    Abstract: A thermal expandability adjuster is provided which contains a glycoluril derivative compound represented by formula (1) below. The thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product of a thermoset resin composition used for an insulating resin layer or the like and is effective for suppressing deformation of a circuit substrate due to heating. Compounding the above thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product obtained by curing a thermoset resin composition and it is therefore possible to provide a member that exhibits small deformation due to heat.
    Type: Application
    Filed: January 28, 2016
    Publication date: February 1, 2018
    Applicant: AIR WATER INC.
    Inventors: Yousuke EBIHARA, Osamu KOYAMA
  • Patent number: 9562533
    Abstract: A cryogenic pump for liquefied gases is provided, which shortens precooling time, has a small loss of cryogenic liquefied gas, excels in pump efficiency, and is advantageous in cost. A motor 1 and an impeller 2 are coupled by a shaft 3 for transmitting a rotative drive force therebetween, and the motor 1 is arranged on an upper side and the impeller 2 is arranged on a lower side. The motor 1 and the impeller 2 exist in an enclosed space 14 where they are communicated with each other and into which the cryogenic liquefied gas is introduced. A heat adjusting unit 11 is provided between the motor 1 and the impeller 2, the heat adjusting unit maintaining existence of the impeller 2 in a liquid phase of the cryogenic liquefied gas and maintaining existence of the motor 1 in a gas phase of the cryogenic liquefied gas.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: February 7, 2017
    Assignee: Air Water Inc.
    Inventors: Taketo Johchi, Shingo Kunitani, Akira Yoshino
  • Patent number: 9517280
    Abstract: Germicidal light fixtures and germicidal light fixture systems. One embodiment of a germicidal light fixture includes a support structure and at least one first lighting device coupled with the support structure operative to emit ultraviolet radiation at a first predetermined wavelength. At least one second lighting device is coupled with the support structure and is operative to emit ultraviolet radiation at a second predetermined wavelength. The first and second predetermined wavelengths are selected such that ultraviolet radiation emitted from the at least one first lighting device and from the at least one second lighting device, respectively, is operative to inactivate microorganisms. At least one third lighting device is coupled with the support structure and is operative to emit visible radiation.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: December 13, 2016
    Assignee: American Air & Water, Inc.
    Inventors: William Warren Lynn, Steven Joseph Jackson, II
  • Patent number: 9453277
    Abstract: A furnace of heat treatment capable of keeping a stable nitriding quality for a long period of time is provided. The furnace of heat treatment performs a halogenation treatment and a nitriding treatment by heating a steel material under a predetermined atmosphere. An alloy containing Ni ranging between 50 mass % or more and 80 mass % or less and Fe ranging between 0 mass % or more and 20 mass % or less is used as a material of surfaces of core internals exposed to a treatment space where the nitriding treatment is performed. Accordingly, a nitriding reaction is hardly caused on the surfaces of the core internals, and the halogenation treatment and the nitriding treatment to an article to be treated can be stably executed for a long period of time. Further, a nitrided layer can be stably formed according to purposes on any types of steel materials including a steel type hard to be nitride.
    Type: Grant
    Filed: December 19, 2013
    Date of Patent: September 27, 2016
    Assignee: Air Water Inc.
    Inventors: Takanori Watanabe, Asahiro Sakata, Hideaki Iwamura
  • Patent number: 9070628
    Abstract: According to the invention, a method of manufacturing an esterified substance including a process in which a copolymer is obtained by copolymerizing a 1-alkene having 5 to 80 carbon atoms and maleic anhydride, and a process in which an esterification reaction of the copolymer and an alcohol having 5 to 25 carbon atoms is caused in a presence of trifluoromethanesulfonic acid in order to obtain a reaction mixture containing an esterified substance including at least one repetition unit selected from formulae (c) to (f) is provided, and, in the formulae (c) to (f), R represents an aliphatic hydrocarbon group having 3 to 78 carbon atoms, R2 represents a hydrocarbon group having 5 to 25 carbon atoms, m represents the copolymerization molar ratio X/Y of the 1-alkene (X) to the maleic anhydride (Y) and is 1/2 to 10/1, and n is an integer of more than or equal to 1.
    Type: Grant
    Filed: May 25, 2011
    Date of Patent: June 30, 2015
    Assignees: SUMITOMO BAKELITE CO., LTD., AIR WATER INC.
    Inventors: Jun-ichi Tabei, Yoshihisa Sone, Kiyotaka Murata, Kou Takahashi
  • Patent number: 8986448
    Abstract: To provide a method of manufacturing a single crystal 3C-SiC substrate that can dramatically reduce surface defects generated in a processing of epitaxial growth and can secure a quality as a semiconductor device while simplifying a post process. The method of manufacturing a single crystal 3C-SiC substrate where a single crystal 3C-SiC layer is formed on a base substrate by epitaxial growth is provided. A first growing stage of forming the single crystal 3C-SiC layer to have a surface state configured with a surface with high flatness and surface pits scattering in the surface is performed. A second growing stage of further epitaxially growing the single crystal 3C-SiC layer obtained in the first growing stage so as to fill the surface pits is performed.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: March 24, 2015
    Assignee: Air Water Inc.
    Inventors: Hidetoshi Asamura, Keisuke Kawamura, Satoshi Obara
  • Patent number: 8974836
    Abstract: An angiogenesis regulating composition used to treat/prevent an angiogenic disease in a subject, that contains in an effective amount at least one of nitrate, nitrite, and a compound convertible into nitrate or nitrite after the compound is absorbed into the subject, and an angiogenesis regulation method administering to a subject a composition containing as an active ingredient at least one of nitrate, nitrite, and a compound convertible into nitrate or nitrite after the compound is absorbed into the subject, provide a composition effective in treating and preventing angiogenic diseases, that can medically control angiogenic diseases, and medically regulate angiogenesis in ophthalmologic diseases in particular, and allows treatment without inhibiting physiological neovascularization, with a limited side effect and significantly safely, and an angiogenesis regulation method using the same.
    Type: Grant
    Filed: May 20, 2013
    Date of Patent: March 10, 2015
    Assignee: Air Water, Inc.
    Inventors: Junya Fujimori, Hidekazu Baba, Toshinori Murata
  • Patent number: 8940931
    Abstract: The present invention provides a method, as a means for industrially producing a refined 6-bromo-2-naphthalenecarboxylic acid product from a crude 6-bromo-2-naphthalenecarboxylic acid product, comprising: causing the above crude product to react with sodium hydroxide in water to precipitate a sodium salt of 6-bromo-2-naphthalenecarboxylic acid; performing recrystallization treatment for the obtained precipitate; causing the obtained crystal to react with acid in water to precipitate 6-bromo-2-naphthalenecarboxylic acid; and recovering the obtained precipitate.
    Type: Grant
    Filed: October 28, 2010
    Date of Patent: January 27, 2015
    Assignee: Air Water Inc.
    Inventors: Takeshi Namekata, Ikuo Ito
  • Patent number: 8906786
    Abstract: A single crystal SiC substrate is produced with low cost in which a polycrystalline SiC substrate with relatively low cost is used as a base material substrate where the single crystal SiC substrate has less strain, good crystallinity and large size. The method including a P-type ion introduction step for implanting P-type ions from a side of a surface Si layer 3 into an SOI substrate 1 in which the surface Si layer 3 and an embedded oxide layer 4 having a predetermined thickness are formed on an Si base material layer 2 to convert the embedded oxide layer 4 into a PSG layer 6 to lower a softening point, and an SiC forming step for heating the SOI substrate 1 having the PSG layer 6 formed therein in an atmosphere hydrocarbon-based gas to convert the surface Si layer 3 into SiC, and thereafter, cooling the resulting substrate to form a single crystal SiC layer 5 on a surface thereof.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: December 9, 2014
    Assignee: Air Water Inc.
    Inventors: Katsutoshi Izumi, Takashi Yokoyama
  • Patent number: 8871350
    Abstract: A gas barrier film in which a gas barrier layer deposited by catalyst CVD in contact with each of both main surfaces of a plastic film is an SiCNFH layer satisfying conditions of 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07, 0.04<I(NH)/I(SiN)<0.08, and 0.05<I(CF)/I(SiN)<0.3; an SiOCNH layer satisfying conditions of 0.1<I(SiH)/I(NH)<0.9, 0.0<I(CH)/I(NH)<0.3, 8<I(SiN)/I(NH)<20, and 2<I(SiO2)/I(NH)<8; or an SiCNH layer satisfying conditions of 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07 and 0.04<I(NH)/I(SiN)<0.08. Here, the ā€œIā€ represents peak intensity of Fourier transform infrared spectroscopy related to an atomic bond shown in the parentheses after the ā€œIā€.
    Type: Grant
    Filed: March 23, 2010
    Date of Patent: October 28, 2014
    Assignees: Material Design Factory Co., Ltd., Air Water Inc.
    Inventor: Hiroshi Nakayama
  • Patent number: 8758856
    Abstract: A method of fluoridation that can maintain a stable treatment quality is provided. The method of the fluoridation treatment performs the fluoridation treatment by heating and keeping a workpiece in a fluoridation treatment space filled with a predetermined fluoride atmosphere. By exposing an interior space structure that is reactive against fluorine within the fluoridation treatment space, forming a fluoride layer in advance on a surface of the interior space structure exposed within the fluoridation treatment space, and performing the fluoridation treatment, a fluoridation source gas supplied for the fluoridation treatment of the workpiece is not significantly consumed for fluoridating the surface of the interior space structure during the fluoridation treatment. Further, even when a fluoridation potential of the supplied fluoridation source gas is insufficient, the fluoride layer on the surface of the interior space structure discharges the fluoridation gas.
    Type: Grant
    Filed: September 10, 2009
    Date of Patent: June 24, 2014
    Assignee: Air Water Inc.
    Inventors: Takanori Watanabe, Hideaki Iwamura, Katsuji Minami