Abstract: A method for manufacturing a compound semiconductor substrate that can achieve thinning of SiC film, wherein the method includes forming a SiC film on one principal surface side of a Si substrate and forming a recessed part in which a bottom surface is Si in a central part of another principal surface of the Si substrate.

Abstract: A hydrogen generator having a reforming catalyst that causes hydrocarbon gas and steam to carry out a reforming reaction and reform into a hydrogen rich reformed gas, a reformer that is filled with said reforming catalyst and in which said reforming reaction is carried out, and a combustion chamber for combusting a fuel gas and obtaining reaction heat that is applied to said reforming reaction. At least the reforming region carrying out the reforming reaction is disposed inside the combustion chamber. A steam generator that introduces steam into the reformer is provided outside the combustion chamber.

Abstract: A method for manufacturing a compound semiconductor substrate comprises: a step to form an SiC (silicon carbide) layer on a Si (silicon) substrate, a step to form a LT (Low Temperature)-AlN (aluminum nitride) layer with a thickness of 12 nanometers or more and 100 nanometers or less on the SiC layer at 700 degrees Celsius or more and 1000 degrees Celsius or less, a step to form a HT (High Temperature)-AlN layer on the LT-AlN layer at a temperature higher than the temperature at which the LT-AlN layer was formed, a step to form an Al (aluminum) nitride semiconductor layer on the HT-AlN layer, a step to form a GaN (gallium nitride) layer on the Al nitride semiconductor layer, and a step to form an Al nitride semiconductor layer on the GaN layer.

Abstract: A compound semiconductor substrate includes a SiC (silicon carbide) layer, a AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a composite layer formed on the Al nitride semiconductor layer, a GaN (gallium nitride) layer as an electron transition layer formed on the composite layer, and an Al nitride semiconductor layer as a barrier layer formed on the GaN layer. The composite layer includes C—GaN layers stacked in a vertical direction, and an AlN layer formed between the C—GaN layers.

Abstract: A pellicle and a method for manufacturing a pellicle that can improve the production yield ratio are provided. A method for manufacturing a pellicle comprises a step to prepare a supporting member containing Si, and a step to form a pellicle film on a top surface of the supporting member. The step to form the pellicle film includes: a step to form a SiC film with a first average carbon concentration on the top surface of the supporting member by carbonizing Si, and a step to form a SiC film with a second average carbon concentration different from the first average carbon concentration on the top surface of the SiC film. The method for manufacturing a pellicle further comprises a step to exposes at least a part of the reverse side of the SiC film by wet etching.

Abstract: A method for manufacturing of a pellicle that can simplify the manufacturing process is provided. The method for manufacturing of a pellicle comprises a step for forming a SiC film on a bottom surface of a Si substrate, a step for bonding a supporting member including a through hole to a bottom surface of the SiC film, and a step for removing the Si substrate, after bonding the supporting member.

Abstract: A liquefied fluid supply system is a liquefied fluid supply system of supplying a nozzle with a liquefied fluid that vaporizes after spraying and includes: a supercooler that cools the liquefied fluid to a temperature lower than a saturation temperature thereof and makes the liquefied fluid into a supercooled liquid; and a booster that boosts in pressure the liquefied fluid made into the supercooled liquid by the supercooler and supplies the liquefied fluid to the nozzle.

Abstract: A method for manufacturing a substrate with less warpage includes a step of forming SiC film 121 on a surface of Si substrate 11, a step of removing bottom surface RG2 which is at least a part of the Si substrate 11 contacting with the SiC film 121, and a step of forming another SiC film on a surface of SiC film 121 after the step of removing the bottom surface RG2.

Abstract: A thermal expandability adjuster is provided which contains a glycoluril derivative compound represented by formula (1) below. The thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product of a thermoset resin composition used for an insulating resin layer or the like and is effective for suppressing deformation of a circuit substrate due to heating. Compounding the above thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product obtained by curing a thermoset resin composition and it is therefore possible to provide a member that exhibits small deformation due to heat.

Abstract: A thermal expandability adjuster is provided which contains a glycoluril derivative compound represented by formula (1) below. The thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product of a thermoset resin composition used for an insulating resin layer or the like and is effective for suppressing deformation of a circuit substrate due to heating. Compounding the above thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product obtained by curing a thermoset resin composition and it is therefore possible to provide a member that exhibits small deformation due to heat.

Abstract: A compound semiconductor substrate having a desired quality is provided. A compound semiconductor substrate has an SiC (silicon carbide) layer, an AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a first GaN (gallium nitride) layer formed on the Al nitride semiconductor layer, a first AlN intermediate layer formed on the first GaN layer in contact with the first GaN layer, and a second GaN layer formed on the first AlN intermediate layer in contact with the first AlN intermediate layer.

Abstract: A vinylbenzylated phenol compound represented by General Formula (1) below is provided. (In General Formula (1), Ar0 is a bifunctional phenol compound residue having one or more monocyclic or polycyclic aromatic nuclei, R1 to R5 may be the same or different and are each hydrogen or a methyl group, and p is an integer of 1 to 4.

Abstract: A composite semiconductor substrate being able to improve voltage withstanding and crystalline quality is provided. A composite semiconductor substrate is equipped with an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, a composite layer formed on the surface of the AlN layer, and a GaN (gallium nitride) layer formed on the surface of the composite layer. The composite layer includes an AlN (aluminum nitride) layer and a GaN layer formed on the surface of the AlN layer. In at least one composite layer, the average density of C and Fe in the GaN layer is higher than the average density of C and Fe in the AlN layer.

Abstract: A semiconductor device which can reduce power consumption and a method for manufacturing the same are provided. A semiconductor device comprises an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, an n-type GaN (gallium nitride) layer formed on the surface of the AlN layer, a first electrode formed at the surface side of the GaN layer, and a second electrode formed at the reverse face side of the Si substrate 1. The magnitude of electrical current which flows between the first electrode and the second electrode depends on electrical voltage between the first electrode and the second electrode.

Abstract: There is provided a method for producing, at a high yield, a composition containing 3-chloro-4-methoxybenzylamine hydrochloride (CMBA-HCl) in which the purity of CMBA-HCl is high. This method comprises a chlorination step involving a chlorination reaction that generates CMBA-HCl from 4-methoxybenzylamine hydrochloride using hydrogen peroxide and hydrochloric acid. There is also provided a CMBA-HCl-containing composition which is produced by the aforementioned production method and in which the purity of CMBA-HCl is high.

Abstract: A composite semiconductor substrate being able to improve voltage withstanding and crystalline quality is provided. A composite semiconductor substrate is equipped with an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, a composite layer formed on the surface of the AlN layer, and a GaN (gallium nitride) layer formed on the surface of the composite layer. The composite layer includes an AlN (aluminum nitride) layer and a GaN layer formed on the surface of the AlN layer. In at least one composite layer, the average density of C and Fe in the GaN layer is higher than the average density of C and Fe in the AlN layer.

Abstract: A thermal expandability adjuster is provided which contains a glycoluril derivative compound represented by formula (1) below. The thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product of a thermoset resin composition used for an insulating resin layer or the like and is effective for suppressing deformation of a circuit substrate due to heating. Compounding the above thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product obtained by curing a thermoset resin composition and it is therefore possible to provide a member that exhibits small deformation due to heat.

Abstract: A cryogenic pump for liquefied gases is provided, which shortens precooling time, has a small loss of cryogenic liquefied gas, excels in pump efficiency, and is advantageous in cost. A motor 1 and an impeller 2 are coupled by a shaft 3 for transmitting a rotative drive force therebetween, and the motor 1 is arranged on an upper side and the impeller 2 is arranged on a lower side. The motor 1 and the impeller 2 exist in an enclosed space 14 where they are communicated with each other and into which the cryogenic liquefied gas is introduced. A heat adjusting unit 11 is provided between the motor 1 and the impeller 2, the heat adjusting unit maintaining existence of the impeller 2 in a liquid phase of the cryogenic liquefied gas and maintaining existence of the motor 1 in a gas phase of the cryogenic liquefied gas.

Abstract: Germicidal light fixtures and germicidal light fixture systems. One embodiment of a germicidal light fixture includes a support structure and at least one first lighting device coupled with the support structure operative to emit ultraviolet radiation at a first predetermined wavelength. At least one second lighting device is coupled with the support structure and is operative to emit ultraviolet radiation at a second predetermined wavelength. The first and second predetermined wavelengths are selected such that ultraviolet radiation emitted from the at least one first lighting device and from the at least one second lighting device, respectively, is operative to inactivate microorganisms. At least one third lighting device is coupled with the support structure and is operative to emit visible radiation.

Abstract: A furnace of heat treatment capable of keeping a stable nitriding quality for a long period of time is provided. The furnace of heat treatment performs a halogenation treatment and a nitriding treatment by heating a steel material under a predetermined atmosphere. An alloy containing Ni ranging between 50 mass % or more and 80 mass % or less and Fe ranging between 0 mass % or more and 20 mass % or less is used as a material of surfaces of core internals exposed to a treatment space where the nitriding treatment is performed. Accordingly, a nitriding reaction is hardly caused on the surfaces of the core internals, and the halogenation treatment and the nitriding treatment to an article to be treated can be stably executed for a long period of time. Further, a nitrided layer can be stably formed according to purposes on any types of steel materials including a steel type hard to be nitride.