Abstract: An integrated circuit device includes a semiconductor die, the semiconductor die including a semiconductor substrate, driving/control circuitry disposed along a peripheral region of the semiconductor die, a MEMS device disposed within a central region of the semiconductor die, and a barrier disposed between the driving/control circuitry and the MEMS device.

Abstract: Many inventions are disclosed. Some aspects are directed to MEMS, and/or methods for use with and/or for fabricating MEMS, that supply, store, and/or trap charge on a mechanical structure disposed in a chamber. Various structures may be disposed in the chamber and employed in supplying, storing and/or trapping charge on the mechanical structure. In some aspects, a breakable link, a thermionic electron source and/or a movable mechanical structure are employed. The breakable link may comprise a fuse. In one embodiment, the movable mechanical structure is driven to resonate. In some aspects, the electrical charge enables a transducer to convert vibrational energy to electrical energy, which may be used to power circuit(s), device(s) and/or other purpose(s). In some aspects, the electrical charge is employed in changing the resonant frequency of a mechanical structure and/or generating an electrostatic force, which may be repulsive.

Abstract: A MEMS device includes a chip carrier having an acoustic port extending from a first surface to a second surface of the chip carrier, a MEMS die disposed on the chip carrier to cover the acoustic port at the first surface of the chip carrier, and an enclosure bonded to the chip carrier and encapsulating the MEMS die.

Abstract: Provided is a micro-electromechanical-system (MEMS) device including a substrate; at least one semiconductor layer provided on the substrate; a circuit region including at least one chip containing drive/sense circuitry, the circuit region provided on the at least one semiconductor layer; a support structure attached to the substrate; at least one elastic device attached to the support structure; a proof-mass suspended by the at least one elastic device and free to move in at least one of the x-, y-, and z-directions; at least one top electrode provided on the at least one elastic device; and at least one bottom electrode located beneath the at least one elastic device such that an initial capacitance is generated between the at least one top and bottom electrodes, wherein the drive/sense circuitry, proof-mass, supporting structure, and the at least one top and bottom electrodes are fabricated on the at least one semiconductor layer.

Abstract: The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer.

Abstract: The present invention describes a processes that builds an acoustic cavity, a chamber, and vent openings for acoustically connecting the chamber with the acoustic cavity. The dry etch processes may include reactive ion etches, which include traditional parallel plate RIE dry etch processes, advanced deep and inductively coupled plasma RIE processes. Three embodiments for connecting the chamber to the cavity from the top side of the substrate, e.g. by using pilot openings formed using at least a portion of the mesh as an etch mask, by forming the vent openings using at least a portion of the mesh as an etch mask, or by having the chamber intersect the vent openings as the chamber is being formed, illustrate how the disclosed process may be modified. By forming the cavity on the back side of the substrate, the depth of the vent holes is decreased. Additionally, using at least a portion of the micro-machined mesh as an etch mask for the vent holes makes the process self-aligning.

Abstract: The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer.

Abstract: A process comprises reducing the thickness of a substrate carrying a plurality of devices, with at least certain of the devices having a micro-machined mesh. A carrier wafer is attached to the back side of the substrate and the fabrication of the devices is completed from the top side of the substrate. Thereafter the plurality of devices is singulated. Various alternative embodiments are disclosed which demonstrate that the thinning of the wafer may occur at different times during the process of fabricating the MEMS devices such as before the mesh is formed or after the mesh is formed. Additionally, the use of carrier wafers to support the thinned wafer enables process steps to be carried out on the side opposite from the side having the carrier wafer. The various alternative embodiments demonstrate that the side carrying the carrier wafer can be varied throughout the process.