Patents Assigned to Alchimer
  • Patent number: 8298946
    Abstract: The present invention relates to a process for selectively coating certain areas of a composite surface with a conductive film, to a process for fabricating interconnects in microelectronics, and to processes and methods for fabricating integrated circuits, and more particularly to the formation of networks of metal interconnects, and also to processes and methods for fabricating microsystems and connectors.
    Type: Grant
    Filed: March 22, 2005
    Date of Patent: October 30, 2012
    Assignee: Alchimer
    Inventors: Christophe Bureau, Sami Ameur
  • Publication number: 20120196441
    Abstract: The present invention relates to a solution and a method for activating the oxidized surface of a substrate, in particular of a semiconducting substrate, for its subsequent coating by a metal layer deposited by the electroless method. According to the invention, this composition contains: A) an activator consisting of one or more palladium complexes; B) a bifunctional organic binder consisting one or more organosilane complexes; C) a solvent system consisting one or more solvents for solubilizing the said activator and the said binder.
    Type: Application
    Filed: September 30, 2010
    Publication date: August 2, 2012
    Applicant: ALCHIMER
    Inventors: Vincent Mevellec, Dominique Suhr
  • Publication number: 20120156892
    Abstract: The present invention relates to a solution and a process for activating the surface of a substrate comprising at least one area formed from a polymer, for the purpose of subsequently covering it with a metallic layer deposited via an electroless process. According to the invention, this composition contains: A) an activator formed from one or more palladium complexes; B) a binder formed from one or more organic compounds chosen from compounds comprising at least two glycidyl functions and at least two isocyanate functions; C) a solvent system formed from one or more solvents capable of dissolving said activator and said binder. Application: Manufacture of electronic devices such as, in particular, integrated circuits, especially in three dimensions.
    Type: Application
    Filed: September 9, 2010
    Publication date: June 21, 2012
    Applicant: ALCHIMER
    Inventors: Vincent Mevellec, Dominique Suhr
  • Patent number: 8133549
    Abstract: The present invention relates to the use of a R—N2+ diazonium salt carrying an aromatic group R, for grafting of the aromatic group onto insulating, semiconductor, binary or ternary compound or composite material surfaces, the diazonium salt being present at a concentration close to its solubility limit, notably at a concentration higher than 0.05 M, and preferably varying between approximately 0.5 M to approximately 4 M.
    Type: Grant
    Filed: October 9, 2006
    Date of Patent: March 13, 2012
    Assignee: Alchimer
    Inventors: Christophe Bureau, Jean Pinson
  • Patent number: 8119542
    Abstract: The present invention essentially relates to a method of preparing an electrically insulating film at the surface of an electrical conductor or semiconductor substrate, such as a silicon substrate. According to the invention, this method comprises: a) bringing said surface into contact with a liquid solution comprising: a protic solvent; at least one diazonium salt; at least one monomer that is chain-polymerizable and soluble in said protic solvent; at least one acid in a sufficient quantity to stabilize said diazonium salt by adjusting the pH of said solution to a value less than 7, preferably less than 2.5; b) the polarization of said surface according to a potentio- or galvano-pulsed mode for a duration sufficient to form a film having a thickness of at least 60 nanometers, and preferably between 80 and 500 nanometers. Application: Metallization of through-vias, especially of 3D integrated circuits.
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: February 21, 2012
    Assignee: Alchimer
    Inventors: Vincent Mevellec, José Gonzalez, Dominique Suhr
  • Publication number: 20120000785
    Abstract: The invention concerns a device to conduct an electrochemical reaction on the surface of a semiconductor substrate (S), characterized in that the device comprises: a container (10) intended to contain an electrolyte (E), a support (20) arranged in the container, said support being adapted for attachment of the semiconductor substrate (S) on said support (20), a counter-electrode (30) arranged in the container (10), illumination means (50) comprising a source (51) emitting light rays and means (52) to homogenize the light rays on all of said surface of the semiconductor substrate (S), so as to activate the surface of the semiconductor substrate (S), and an electric supply (40) comprising connection means for connection to the semiconductor substrate and to the counter-electrode in order to polarize said surface of said semiconductor substrate (S) at an electric potential permitting the electrochemical reaction.
    Type: Application
    Filed: March 25, 2010
    Publication date: January 5, 2012
    Applicant: ALCHIMER
    Inventors: Said Zahraoui, Francis Descours, Frederic Raynal
  • Publication number: 20110294231
    Abstract: Method for repairing copper diffusion barrier layers on a semiconductor solid substrate and repair kit for implementing this method. One subject of the present invention is a method for repairing a surface of a substrate coated with a discontinuous copper diffusion barrier layer of a titanium-based material. According to the invention, this method comprises: a) the contacting of the surface with a suspension containing copper or copper alloy nanoparticles for a time of between 1 s and 15 min; and b) the contacting of the thus treated surface with a liquid solution having a pH of between 8.5 and 12 and containing: at least one metal salt, at least one reducing agent, at least one stabilizer at a temperature of between 50° C. and 90° C., preferably between 60° C. and 80° C., for a time of between 30 s and 10 min, preferably between 1 min and 5 min, in order to thus form a metallic film having a thickness of at least 50 nanometers re-establishing the continuity of the copper diffusion barrier layer.
    Type: Application
    Filed: September 7, 2009
    Publication date: December 1, 2011
    Applicant: ALCHIMER
    Inventor: Vincent Mevellec
  • Patent number: 7968653
    Abstract: The present invention concerns the use of RO. radicals, R being a hydrogen, an alkyl group having 2 to 15 carbons, an acyl group —COR? in which R? represents an alkyl group having 2 to 15 carbons, or an aroyl group —COAr in which Ar represents an aromatic group having 6 to 15 carbons, for the hydroxylation, alkoxylation or oxycarbonylation of polymer surfaces, the said polymers being different from polymers chosen from: polymethylmethacrylate (PMMA) and fluorocarbon polymers when R represents a hydrogen, or of polymer mixture surfaces, notably hydrophobic ones, the said polymers consisting in monomeric units of which at least 50% among these are aliphatic units, and the said RO. radicals being generated by electrochemical or photochemical means.
    Type: Grant
    Filed: October 10, 2006
    Date of Patent: June 28, 2011
    Assignee: Alchimer
    Inventors: Christophe Bureau, Jean Pinson
  • Patent number: 7956099
    Abstract: Described is the use of RO• radicals, R being a hydrogen, an alkyl group having 2 to 15 carbons, an acyl group —COR? in which R? represents an alkyl group having 2 to 15 carbons, or an aroyl group —COAr in which Ar represents an aromatic group having 6 to 15 carbons, for the hydroxylation, alkoxylation or oxycarbonylation of polymer or polymer mixture surfaces, the said polymers consisting in monomeric units of which at least 50% among these are aromatic units and the said RO• radicals being generated by electrochemical or photochemical methods.
    Type: Grant
    Filed: October 10, 2006
    Date of Patent: June 7, 2011
    Assignee: Alchimer
    Inventors: Christophe Bureau, Jean Pinson
  • Publication number: 20100038256
    Abstract: The object of the present invention is a method of coating a surface of a substrate with copper by electroplating. According to the invention, this method comprises: a step during which the said surface to be coated is brought into contact with an electroplating bath while the said surface is not under electrical bias; a step of forming the coating during which the said surface is biased; a step during which the said surface is separated from the electroplating bath while it is under electrical bias; the aforementioned electroplating bath comprising, in solution in a solvent: a source of copper ions, with a concentration of between 0.4 and 40 mM; and at least one copper complexing agent.
    Type: Application
    Filed: September 20, 2006
    Publication date: February 18, 2010
    Applicant: ALCHIMER
    Inventors: Hervé Monchoix, Frédéric Raynal, Jérôme Daviot, José Gonzalez
  • Publication number: 20100003808
    Abstract: The present invention essentially relates to a method of preparing an electrically insulating film at the surface of an electrical conductor or semiconductor substrate, such as a silicon substrate. According to the invention, this method comprises: a) bringing said surface into contact with a liquid solution comprising: a protic solvent; at least one diazonium salt; at least one monomer that is chain-polymerizable and soluble in said protic solvent; at least one acid in a sufficient quantity to stabilize said diazonium salt by adjusting the pH of said solution to a value less than 7, preferably less than 2.5; b) the polarization of said surface according to a potentio- or galvano-pulsed mode for a duration sufficient to form a film having a thickness of at least 60 nanometres, and preferably between 80 and 500 nanometres. Application: Metallization of through-vias, especially of 3D integrated circuits.
    Type: Application
    Filed: June 30, 2009
    Publication date: January 7, 2010
    Applicant: ALCHIMER
    Inventors: Vincent MEVELLEC, José GONZALES, Dominique SUHR
  • Publication number: 20090294293
    Abstract: The present invention relates to an electrodeposition composition intended particularly for coating a semiconductor substrate in order to fabricate structures of the “through via” type for the production of interconnects in integrated circuits. According to the invention, the said solution comprises copper ions in a concentration of between 14 and 120 mM and ethylenediamine, the molar ratio between ethylenediamine and copper being between 1.80 and 2.03 and the pH of the electrodeposition solution being between 6.6 and 7.5. The present invention also relates to the use of the said electrodeposition solution for the deposition of a copper seed layer, and to the method for depositing a copper a seed layer with the aid of the electrodeposition solution according to the invention.
    Type: Application
    Filed: May 4, 2009
    Publication date: December 3, 2009
    Applicant: ALCHIMER
    Inventors: Said ZAHRAOUI, Frederic RAYNAL
  • Patent number: 7605050
    Abstract: The invention relates to a method of bonding a polymer surface to an electrically conductive or semiconductive surface, which method is characterized in that it comprises: a) the electrografting of an organic film onto the conductive or semiconductive surface; and then b) an operation of bonding the polymer surface to the conductive or semiconductive surface thus grafted. It also relates to applications of this method and to structures obtained by its implementation.
    Type: Grant
    Filed: August 25, 2003
    Date of Patent: October 20, 2009
    Assignees: Commissariat A L'Energie Atomique, Alchimer S.A.
    Inventors: Christophe Bureau, Julienne Charlier
  • Patent number: 7579274
    Abstract: The object of the present invention is a method and compositions for direct copper plating and filling to form interconnects in the fabrication of semiconductor devices. According to the invention, this method comprises: providing an electrolytic copper bath containing, in solution in a solvent, a source of copper ions with a concentration of between 45 and 200 mM, preferably of between 45 and 100 mM and at least one copper complexing agent which is an aliphatic polyamine having 2 to 4 amine functions with a concentration of between 30 and 200 mM, preferably of between 60 and 200 mM; the copper/complexing agent(s) molar ratio being of between 0.2 and 2, preferably between 0.3 and 1.5; bringing said copper diffusion barrier layer of said substrate into contact with said electrolytic copper bath, applying an electrical bias to the substrate for a duration adjusted according to the thickness of copper to be electroplated, removing the substrate from said electrolytic copper bath.
    Type: Grant
    Filed: February 20, 2007
    Date of Patent: August 25, 2009
    Assignee: Alchimer
    Inventors: José Gonzalez, Hervé Monchoix
  • Publication number: 20090183993
    Abstract: The object of the present invention is an electroplating composition intended in particular for coating a copper-diffusion barrier layer in the fabrication of interconnects for integrated circuits. According to the invention, this composition comprises, in solution in a solvent: a source of copper ions, in a concentration of between 0.4 and 40 mM; at least one copper complexing agent chosen from the group comprising primary aliphatic amines, secondary aliphatic amines, tertiary aliphatic amines, aromatic amines, nitrogen heterocycles and oximes; the copper/complexing agent(s) molar ratio being between 0.1 and 2.5, preferably between 0.3 and 1.3; and the pH of the said composition being less than 7, preferably between 3.5 and 6.5.
    Type: Application
    Filed: September 20, 2006
    Publication date: July 23, 2009
    Applicant: ALCHIMER
    Inventors: Jérôme Daviot, José Gonzalez
  • Publication number: 20080249272
    Abstract: The present invention concerns the use of RO. radicals, R being a hydrogen, an alkyl group having 2 to 15 carbons, an acyl group —COR? in which R? represents an alkyl group having 2 to 15 carbons, or an aroyl group —COAr in which Ar represents an aromatic group having 6 to 15 carbons, for the hydroxylation, alkoxylation or oxycarbonylation of polymer surfaces, the said polymers being different from polymers chosen from: polymethylmethacrylate (PMMA) and fluorocarbon polymers when R represents a hydrogen, or of polymer mixture surfaces, notably hydrophobic ones, the said polymers consisting in monomeric units of which at least 50% among these are aliphatic units, and the said RO. radicals being generated by electrochemical or photochemical means.
    Type: Application
    Filed: October 10, 2006
    Publication date: October 9, 2008
    Applicant: ALCHIMER
    Inventors: Christophe Bureau, Jean Pinson
  • Publication number: 20070272560
    Abstract: The object of the present invention is a method and compositions for direct copper plating and filling to form interconnects in the fabrication of semiconductor devices. According to the invention, this method comprises providing an electrolytic copper bath containing, in solution in a solvent, a source of copper ions with a concentration of between 45 and 200 mM, preferably of between 45 and 100 mM and at least one copper complexing agent which is an aliphatic polyamine having 2 to 4 amine functions with a concentration of between 30 and 200 mM, preferably of between 60 and 200 mM; the copper/complexing agent(s) molar ratio being of between 0.2 and 2, preferably between 0.3 and 1.5; bringing said copper diffusion barrier layer of said substrate into contact with said electrolytic copper bath, applying an electrical bias to the substrate for a duration adjusted according to the thickness of copper to be electroplated, removing the substrate from said electrolytic copper bath.
    Type: Application
    Filed: February 20, 2007
    Publication date: November 29, 2007
    Applicant: ALCHIMER
    Inventors: Jose Gonzalez, Herve Monchoix
  • Publication number: 20070262449
    Abstract: The present invention concerns a methods and compositions for preparing a multi layer composite device, such as a semiconductor device. Said method comprises (A) forming a dielectric layer on the surface of a composite material by bringing said surface into contact: a) either with a solution, comprising the diazonium salt of aniline, a diazonium salt bearing at least one functional group or an amine compound of formula H2N-A-X-Z as defined in claim 1: b) or with a first solution containing an aryl diazonium salt and successively a second solution containing a compound bearing at least one functional group and bearing at least one functional group capable of reacting with the aryl radical grafted on the surface of the composite material thanks to the aryl diazonium salt; (B) forming an overlayer on said surface of said composite material obtained in step (A), said overlayer consisting of a Si-containing dielectric Cu-Etch Stop Layer and/or copper diffusion barrier.
    Type: Application
    Filed: March 5, 2007
    Publication date: November 15, 2007
    Applicant: ALCHIMER
    Inventors: Isabelle Bispo, Nathalie Thieriet, Paolo Mangiagalli
  • Patent number: 7247226
    Abstract: The present invention concerns a lining support comprising a plurality of conductive pads (12) associated with a shared addressing contact (18) and means of selecting at least one pad to be lined by electrochemical means among the plurality of pads. In accordance with the invention, the selection means comprise means (20) of shifting a polarisation voltage, connected between the shared addressing contact and at least one pad to be addressed. Application to the lining of conductive pads.
    Type: Grant
    Filed: August 26, 2003
    Date of Patent: July 24, 2007
    Assignee: Alchimer S.A.
    Inventors: Christophe Bureau, François Perruchot, Christophe Kergueris
  • Patent number: 7196385
    Abstract: An electromechanical microstructure including a first mechanical part formed in a first electrically conductive material, and which includes a zone deformable in an elastic manner having a thickness value and an exposed surface, and a first organic film having a thickness, present on all of the exposed surface of the deformable zone. The thickness of the first film is such that the elastic response of the deformable zone equipped with the first film does not change by more than 5% compared to the response of the bare deformable zone, or the thickness of the first film is less than ten times the thickness of the deformable zone.
    Type: Grant
    Filed: August 25, 2003
    Date of Patent: March 27, 2007
    Assignees: Alchimer S.A., Tronic's Microsystems
    Inventors: Christophe Bureau, Christophe Kergueris, Francois Perruchot