Abstract: The object of the present invention is an electroplating composition intended in particular for coating a copper-diffusion barrier layer in the fabrication of interconnects for integrated circuits. According to the invention, this composition comprises, in solution in a solvent: a source of copper ions, in a concentration of between 0.4 and 40 mM; at least one copper complexing agent chosen from the group comprising primary aliphatic amines, secondary aliphatic amines, tertiary aliphatic amines, aromatic amines, nitrogen heterocycles and oximes; the copper/complexing agent(s) molar ratio being between 0.1 and 2.5, preferably between 0.3 and 1.3; and the pH of the said composition being less than 7, preferably between 3.5 and 6.5.

Abstract: The object of the present invention is a method of coating a surface of a substrate with copper by electroplating. According to the invention, this method comprises: a step during which the said surface to be coated is brought into contact with an electroplating bath while the said surface is not under electrical bias; a step of forming the coating during which the said surface is biased; a step during which the said surface is separated from the electroplating bath while it is under electrical bias; the aforementioned electroplating bath comprising, in solution in a solvent: a source of copper ions, with a concentration of between 0.4 and 40 mM; and at least one copper complexing agent.

Abstract: The present invention relates to a process for coating a surface of a substrate with a seed film of a metallic material, the said surface being an electrically conductive or semiconductive surface and having recesses and/or projections. The process comprises the following: an organic film is placed on the said surface, the said film having a thickness such that the free face of this film conformally follows the recesses and/or projections of the said electrically conductive or semiconductive surface on which it is placed; a precursor of the metallic material is inserted within the said organic film placed on the said surface at the same time as, or after, the step consisting in placing the said organic film on the said surface; and the said precursor of the metallic material inserted within the said organic film is converted into the said metallic material. This process allows integrated circuits, interconnects in microelectronics and microsystems to be fabricated.

Abstract: The present invention concerns a lining support comprising a plurality of conductive pads (12) associated with a shared addressing contact (18) and means of selecting at least one pad to be lined by electrochemical means among the plurality of pads. In accordance with the invention, the selection means comprise means (20) of shifting a polarisation voltage, connected between the shared addressing contact and at least one pad to be addressed. Application to the lining of conductive pads.

Abstract: The invention relates to a method of bonding a polymer surface to an electrically conductive or semiconductive surface, which method is characterized in that it comprises: a) the electrografting of an organic film onto the conductive or semiconductive surface; and then b) an operation of bonding the polymer surface to the conductive or semiconductive surface thus grafted. It also relates to applications of this method and to structures obtained by its implementation.

Abstract: An electromechanical microstructure including a first mechanical part formed in a first electrically conductive material, and which includes a zone deformable in an elastic manner having a thickness value and an exposed surface, and a first organic film having a thickness, present on all of the exposed surface of the deformable zone. The thickness of the first film is such that the elastic response of the deformable zone equipped with the first film does not change by more than 5% compared to the response of the bare deformable zone, or the thickness of the first film is less than ten times the thickness of the deformable zone.