Abstract: A pressure sensor includes a conductive substrate having a cavity which forms a thin portion that can be deformed by a pressure differential. A magnetic field sensor has at least one coil responsive to a changing coil drive signal and positioned proximate to the thin portion of the substrate that induces eddy currents in the thin portion that generate a reflected magnetic field. Magnetic field sensing elements detect the reflected magnetic field and generate a magnetic field signal. The magnetic field sensor is positioned so that deformation of the thin portion of the substrate causes a distance between the thin portion of the substrate and the magnetic field sensor to change.

Abstract: A substrate includes at least first, second, and third metal layers and adjacent substrate portions having rotated arrangements of signal traces provided by the metal layers. Each metal layer includes first and second spaced portions. The first portion of the first metal layer includes a first trace configured to carry a first signal and the second portion of the first metal layer includes a second trace configured to carry a second signal. The first portion of the second metal layer includes third and fourth spaced traces configured to carry the second signal and the second portion includes fifth and sixth spaced traces configured to carry the first signal. The first portion of the third metal layer includes a seventh trace configured to carry the first signal and the second portion includes an eighth trace configured to carry the second signal.

Abstract: Systems and methods are described herein for reducing the effects of magnetic field cross-coupling in a multi-conductor current sensor system. A current sensor system includes one or more current sensors, each positioned proximate to at least one conductor and spaced from at least one other conductor. Each conductor carries a current intended to be measured by a respective current sensor. The current sensors include one or more magnetic field sensing elements to generate a magnetic field signal indicative of a detected magnetic field. A characterization measurement is performed to determine the coupling between each current sensor and the respective current conductor and to determine the coupling between the current sensor and the other ones of the current conductors, by providing a reference current to each of the conductors and measuring the outputs at each of the current sensors. The characterization measurement can be used to generate a coupling matrix.

Abstract: A magnetic field sensor has a plurality of magnetic field sensing elements and operates as a motion detector for sensing a rotation or other movement of a target object.

Abstract: A magnetic field sensor has a plurality of magnetic field sensing elements and operates as a motion detector for sensing a rotation or other movement of a target object.

Abstract: A magnetoresistance structure includes a first magnetoresistance element and a second magnetoresistance element, wherein the first magnetoresistance element is formed on a surface of the second magnetoresistance element. The first magnetoresistance element comprises a free layer, a bias stack configured to bias a magnetic alignment of the free layer to a first direction in the absence of an external magnetic field, and a reference stack having a reference direction substantially orthogonal to the first direction. The magnetoresistance structure may be used to form a two- or three-dimensional magnetic field sensor.

Abstract: A current sensor integrated circuit includes a lead frame having a primary conductor and at least one secondary lead, a semiconductor die disposed adjacent to the primary conductor, an insulation structure disposed between the primary conductor and the semiconductor die, and a non-conductive insulative material enclosing the semiconductor die, the insulation structure, a first portion of the primary conductor, and a first portion of the at least one secondary lead to form a package. The first portion of the at least one secondary lead (between a first end proximal to the primary conductor and a second end proximal to the second, exposed portion of the at least one secondary lead) has a thickness that is less than a thickness of the second, exposed portion of the least one secondary lead. A distance between the second, exposed portion of the primary conductor and the second, exposed portion of the at least one secondary lead is at least 7.2 mm.

Abstract: Methods and apparatus for an integrated circuit having first and second domains with an insulative material electrically isolating the first and second domains. A conductive shield is disposed between the first and second domains and a current sensor has at least one magnetoresistive element proximate the shield to detect current flow in the shield due to breakdown of the insulative material.

Abstract: A manufacturing method results in a magnetoresistance element having conductive contacts disposed between the magnetoresistance element and a semiconductor substrate.

Abstract: A magnetic field sensor can include a magnetic field sensor can include a substrate having a major surface in an x-y plane with an x axis and a y axis. The magnetic field sensor can also have an external field sensing circuit disposed upon the substrate and responsive to an external magnetic field generated outside of the magnetic field sensor. The external field sensing circuit can include one or more magnetoresistance elements, each having a respective reference layer with a magnetic direction parallel to the y axis and in the x-y plane. The one or more magnetoresistance elements can be operable to generate a magnetoresistance element signal responsive to the external magnetic field.

Abstract: A structure having collocated magnetic field sensing elements can be used to simultaneously determine magnetic field and mechanical stress. A primary magnetic field sensing element generates a primary signal responsive to a magnetic field and a secondary magnetic field sensing element generates a secondary signal responsive to mechanical stress. A system includes a stress compensation module to receive the primary and signals, and to compensate for mechanical stress in the primary signal.

Abstract: A system for communicating between electronic devices on a communication bus includes a communication bus and one or more communication circuits each having an output driver coupled to the communication bus and each having an input terminal. Each communication circuit produces, in response to a request message, a data communication on the communication bus in a predetermined order with respect to data communications from other communication circuits so that the data communications from each communication circuit form a sequential data stream in response to the request message.

Abstract: The systems and methods described can reduce high order temperature coefficients on the Hall plate sensitivity. A temperature coefficient circuit may include a first amplifier to receive a first reference voltage generated in conjunction with a proportional to absolute temperature (PTAT) device and a second amplifier to receive a second reference voltage generated in conjunction with a complementary to absolute temperature (CTAT) device, the second amplifier having a second output node. A plurality of resistors may be disposed in a signal path between output node of the first amplifier and an output node of the second amplifier. The plurality of resistors may be coupled to at least one voltage-to-current converter through one or more resistors taps. The voltage-to-current converter may generate at least one current signal that can be operable to apply a multiplication factor or a division divisor to an amplifier coupled to the voltage-to-current converter.

Abstract: Apparatus and methods provide an output signal indicative of a failure of a filter circuit and/or a Schmitt trigger circuit of a magnetic field sensor. A magnetic field sensor includes one or more magnetic field sensing elements that generate a magnetic field signal, a filter circuit that filters the magnetic field signal, a Schmitt trigger circuit that compares the filtered signal to a Schmitt trigger threshold during a first time period, and a diagnostic circuit coupled to the filter circuit that compares the Schmitt trigger threshold to a diagnostic threshold during a second time period that does not overlap with the first time period. An output signal indicative of a failure is output when the diagnostic threshold is greater than a predetermined percentage or absolute value above or below the Schmitt trigger threshold.

Abstract: An electronics module assembly for detecting photons is provided to include: a substrate layer; a buried layer deposited upon a first surface area of the substrate layer; an intrinsic layer deposited upon a first portion of a first surface area of the buried layer; a plug layer deposited upon a second portion of the first surface area of the buried layer; a p-plus layer deposited upon a first surface area of the intrinsic layer; an n-plus layer deposited upon a first surface area of the plug layer; a pre-metal dielectric (PMD) layer deposited upon the p-plus layer and n-plus layer; a first node coupled, through the PMD layer, to the p-plus layer; and a second node coupled, through the PMD layer, to the n-plus layer.

Abstract: According to an embodiment of the present disclosure, a photodetector device can include a substrate layer; a bottom contacting layer disposed over a surface of the substrate layer and having a first contacting region and a second contacting region, the bottom contacting layer providing a low resistance path between the first and second contacting regions; an insulating layer disposed over a surface of the bottom contacting layer; an intrinsic region disposed within the insulating layer, the intrinsic region in electrical contact with the first contacting region of the bottom contacting layer, the intrinsic region comprising a low band-gap material; a metal contact disposed within the insulating layer and in electrical contact with the second contacting region of the bottom contacting layer; an anode in electrical contact with the intrinsic region; and a cathode in electrical contact with the metal contact.

Abstract: A circuit for detecting motion of an object includes a semiconductor substrate having first and second opposing surfaces. The circuit also includes a magnetic field sensor disposed on the first surface of the substrate and configured to generate a respective plurality of magnetic field sensor output signals in response to a magnetic field associated with the object. At least one of the magnetic field sensor output signals is indicative of an angular position of the magnetic field with respect to the sensor. Additionally, at least one of the magnetic field sensor output signals is indicative of an amplitude of the magnetic field.

Abstract: Methods and apparatus for detecting a magnetic field include a semiconductor substrate, a coil configured to provide a changing magnetic field in response to a changing current in the coil; and a magnetic field sensing element supported by the substrate. The coil receives the changing current and, in response, generates a changing magnetic field. The magnetic field sensing element detects the presence of a magnetic target by detecting changes to the magnetic field caused by the target and comparing them to an expected value.

Abstract: Methods and apparatus for monitoring the integrity of an insulative material. A monitoring module detects a leakage current corresponding to an injection signal into the insulative material by a signal source. An output can provide an insulation fault signal when the leakage current is greater than a given threshold.

Abstract: A material stack includes a first magnetoresistance element with a first direction of response to an external magnetic field and a second magnetoresistance element with second direction of response to the external magnetic field, opposite to the first direction of response. The first magnetoresistance element can be disposed under or over the second magnetoresistance element. An insulating layer separates the first and second magnetoresistance elements.