Abstract: A sensor integrated circuit can include sensors with differing levels of sensitivity, a first processing channel that responds to a first analog signal generated by a first sensor to generate a first processed signal, and a second processing channel that responds to a second analog signal generated by the second sensor to generate a second processed signal. Where the first sensor can include a pressure or optical sensing element, and the second sensor can include a pressure or optical sensing element. A checker circuit uses the processed signals to detect faults in the sensor integrated circuit.

Abstract: An apparatus includes a first terminal, a second terminal, and a conduction path circuit coupled between the first and second terminals. The conduction path circuit includes an input terminal to receive an enable signal which, when activated, allows the conduction path circuit to conduct electrical current between the first and second terminal. A control circuit coupled to the input terminal of the conduction path circuit is configured to selectively activate the enable signal.

Abstract: A magnetic field sensor includes a substrate having a surface and a plurality of magnetoresistance elements supported by the surface of the substrate. Each magnetoresistance element has a respective width parallel to the surface, and each width may be a smallest dimension parallel to the surface. A first width of a first magnetoresistance element of the plurality of magnetoresistance elements may be different from a second width of a second magnetoresistance element of the plurality of magnetoresistance elements. A processing circuit may be coupled to the plurality of magnetoresistance elements to receive a signal representing a detected magnetic field from at least one of the magnetoresistance elements.

Abstract: A planar Hall effect element be formed upon or can include a P-type substrate. The planar Hall effect element can also include a Hall plate region. The Hall plate region can include a first portion of an N-type layer disposed over the P-type substrate. The first portion of the N-type layer can include a top surface distal from the P-type substrate, and a continuous N-type outer boundary intersecting the top surface of the Hall plate region. The planar Hail effect element can also include an isolation region having a continuous outer boundary and having a continuous inner boundary, the continuous inner boundary in contact with all of the outer boundary of the Hall plate region, the P-type substrate and the first portion of the N-type layer not forming a P/N junction.

Abstract: An integrated circuit package includes a lead frame having a first surface, a second opposing surface, at least one die attach portion configured to support at least one die, and a plurality of leads, wherein at least one of the leads has a raised feature extending along a portion of a length of the lead.

Abstract: A driver circuit includes a power terminal, a reference terminal, and a bridge circuit. The bridge circuit comprises a first switch coupled to the power terminal, a second switch coupled in series between the first switch and the reference terminal to form a first output terminal between the first and second switches, a third switch coupled to the power terminal, and a fourth switch coupled in series between the third switch and the reference terminal to form a second output terminal between the third and fourth switches. The second and fourth switches are PNP BJT devices.

Abstract: A magnetic field sensor comprises a magnetoresistance element with a variable conductivity that changes based on a function of a magnetic field strength and angle of an external magnetic field and a voltage across the magnetoresistance element. A circuit is included to monitor an electrical current through the magnetoresistance element during operation and to apply a constant voltage across the magnetoresistance element based on the monitored electrical current so that the variable conductivity does not change as result of a changing voltage across the magnetoresistance element.

Abstract: In one aspect, an integrated circuit (IC) includes a magnetic field sensor to detect speed and direction of angular rotation of a rotating magnetic structure. The magnetic field sensor includes at least two magnetic field sensing elements configured to sense changes in a magnetic field caused by rotation of the magnetic structure. The IC also includes an output port configured to provide an output signal of the magnetic field sensor. The output signal indicates the speed and one of the direction or a fault.

Abstract: A magnetic field sensor includes a back bias magnet to generate a DC magnetic field. First and second magnetic field sensing elements of the magnetic field sensor are disposed proximate to at least one ferromagnetic surface of a ferromagnetic target object. The first and second magnetic field sensing elements generate first and second electronic signals, respectively, in response to first and second sensed magnetic fields corresponding to the DC magnetic field but influenced by the at least one ferromagnetic surface. The magnetic field sensor generates a difference signal that is a difference of amplitudes of the first and second electronic signals. The difference signal is indicative of a rotation measurement of an absolute relative rotation of the ferromagnetic target object and the magnetic field sensor about a rotation axis.

Abstract: A magnetic field sensor includes a plurality of magnetic field sensing elements configured to generate at least two measured magnetic field signals indicative of a magnetic field affected by an object and having a first predetermined phase difference with respect to each other and a controller responsive to the at least two measured magnetic field signals. The controller is configured to generate at least one virtual magnetic field signal having a second predetermined phase difference with respect to at least one of the measured magnetic field signals. In embodiments, the virtual magnetic field signal has the second predetermined phase difference with respect to each of the at least two measured magnetic field signals.

Abstract: A system for detecting a magnetic target includes a magnetic field sensor comprising two or more sensing clusters positioned on a surface of a substrate; and a magnetic target comprising at least four magnetic quadrants spaced evenly around a center point of the magnetic target. The at least four magnetic quadrants have alternating magnetic polarities. The two or more sensing clusters are positioned evenly around the axis of rotation so that each of the sensing clusters detects a magnetic field of two magnetic quadrants that have the same magnetic polarity.

Abstract: The present disclosure is directed towards a method for patterning a magnetic sensing layer. The method includes disposing a protective layer on a first of a substrate, disposing a first insulating layer on a first surface of protective layer. An opening is formed in the first insulating layer to expose the first surface of the protective layer. A magnetic sensing layer is disposed over the first insulating layer and a predetermined portion of the first surface of the protective layer within the opening. A second insulating layer can be disposed over the magnetic sensing layer. The second insulation layer and the magnetic sensing layer can be removed from the first insulation layer. Thus, the opening includes the magnetic sensing layer and the second insulation layer after the removal of the second insulation layer and magnetic sensing layer from the first insulation layer.

Abstract: A magnetic field sensor includes a plurality of magnetic field sensing elements configured to generate at least two measured magnetic field signals indicative of a magnetic field affected by an object and having a first predetermined phase difference with respect to each other and a controller responsive to the at least two measured magnetic field signals. The controller is configured to generate an angle signal and to compare the angle signal to at least one angle signal threshold. The angle signal can be compared to a plurality of angle signal thresholds to generate a plurality of output transitions, each output transitions indicative of the angle signal crossing the corresponding angle signal threshold. The number of angle signal thresholds can be dependent upon a desired number of output transitions per pole-pair of the angle signal.

Abstract: A magnetic field sensor includes a plurality of magnetic field sensing elements configured to generate at least two measured magnetic field signals indicative of a magnetic field affected by an object and having a first predetermined phase difference with respect to each other. A controller responsive to the measured magnetic field signals is configured to generate at least one virtual magnetic field signal having a second predetermined phase difference with respect to at least one of the measured magnetic field signals. The controller is configured to calculate a virtual tangent of the virtual magnetic field signal and at least one measured magnetic field signal and compute a second derivative of an arctangent extraction of the virtual tangent. Coefficients used to generate the virtual magnetic field signals are regulated in a feedback system in order to achieve a desired phase difference between a reference and a virtual magnetic field signal.

Abstract: A magnetic field sensor includes a first magnetic field sensing element configured to produce a first signal representing a detected external magnetic field; a circular vertical hall element configured to produce a second signal representing an amplitude of the external magnetic field; and an error compensation circuit coupled to receive the first and second signal, compute an error value based on the amplitude of the external magnetic field, and apply the error value to the first signal to compensate for an error in the first signal.

Abstract: In one aspect, an integrated circuit (IC) includes a sensor that includes a first magnetoresistive (MR) element and a second MR element less active to a presence of a magnetic field than the first MR element. The second MR element includes a metal layer diffused into other layers of the second MR element.

Abstract: A method includes depositing on a substrate a magnetoresistance stack, depositing a first hard mask on the magnetoresistance stack, depositing a first photoresist on the first hard mask, patterning the first photoresist to expose portions of the first hard mask, and etching the exposed portions of the first hard mask to expose a portion of the magnetoresistance stack. The method further includes stripping the first photoresist, etching the exposed portions of the magnetoresistance stack and the first hard mask to form a first intermediate structure having a base and a pillar structure, depositing an etch barrier on the first intermediate structure, and depositing a second hard mask on the etch barrier. A second photoresist is deposited on the second hard mask.

Abstract: An electronic device having first and second terminals includes an electrical overstress (EOS) protection circuitry configured to detect an EOS event at one or both of the first and second terminals. The electronic device includes a power clamp coupled to the EOS protection circuitry and configured to clamp a voltage between the first terminal and the second terminal to a clamp voltage. The EOS protection circuitry can adjust the clamp voltage when an EOS event is detected.

Abstract: A sensor integrated circuit includes at least two processing channels responsive to the same or different analog input signals to generate respective processed signals. The two processing channels are non-homogenous and, in some embodiments have different processing accuracies. A checker circuit receives the first and second processed signals and is configured to detect a fault in the sensor integrated circuit when the first and second processed signals differ from each other by more than a predetermined amount.

Abstract: A magnetic field sensor can include a substrate, a first magnetoresistance element disposed over the substrate and including a first maximum response axis and a first bias layer structure configured to generate a first bias magnetic field with a first magnetic direction between ninety degrees and sixty degrees relative to the first maximum response axis. The magnetic field sensor can also include a second magnetoresistance element disposed over the substrate and including a second maximum response axis parallel to the first maximum response axis and a second bias layer structure configured to generate a second bias magnetic field with a second magnetic direction parallel to the first magnetic direction and opposed to the first magnetic direction. The first and second magnetoresistance elements can each have a pair of electrical contacts for coupling to circuits.