Abstract: A magnetic field sensor can sense a movement of an object along a path. A movement line is tangent to the path. The magnetic field sensor can include a semiconductor substrate. The semiconductor substrate can have first and second orthogonal axes orthogonal to each other on the first surface of the substrate. A projection of the movement line onto a surface of the semiconductor substrate is only substantially parallel to the first orthogonal axis. The magnetic field sensor can also include first, second, third, and fourth magnetic field sensing elements disposed on the substrate. The first and second magnetic field sensing elements have maximum response axes parallel to the first orthogonal axis and the second and fourth magnetic field sensing elements have maximum response axes parallel to the second orthogonal axis. Signals generated by the second and fourth magnetic field sensing elements can be used as reference signals.

Abstract: An integrated circuit package includes a lead frame having a first surface, a second opposing surface, at least one die attach portion configured to support at least one die, and a plurality of leads, wherein at least one of the leads has a raised feature extending along a portion of a length of the lead.

Abstract: A magnetic field sensor includes a plurality of magnetic field sensing elements operable to generate magnetic field signals indicative of a magnetic field associated with an object, a plurality of channels coupled to receive the magnetic field signals and configured to generate a respective plurality of phase separated channel signals, and an output circuit coupled to receive the plurality of phase separated channel signals and configured to generate a sensor output signal including distinguishable pulses associated with the plurality of phase separated channel signals. The sensor output signal may include a first plurality of pulses associated with a first one of the phase separated channel signals and having a first characteristic and a second plurality of pulses associated with a second one of the phase separated channel signals and having a second characteristic different than the first characteristic, such as different signals levels and/or different pulse widths.

Abstract: The present disclosure is directed to an electronic circuit having a Hall effect element and a resistor bridge, all disposed over a common semiconductor substrate. The resistor bridge includes a first set of resistive elements having a first vertical epitaxial resistor and a first lateral epitaxial resistor coupled in series, and a second set of resistive elements having a second vertical epitaxial resistor and a second lateral epitaxial resistor coupled in series. The first set of resistive elements and the second set of resistive elements can be coupled in parallel. The resistor bridge can be configured to sense a stress value of the Hall effect element.

Abstract: A gate-less electrostatic discharge (ESD) protection device is provided that can be formed in various complementary metal-oxide-semiconductor (CMOS) systems. The gate-less ESD event protection device includes a substrate, a first doped region formed in the substrate, a second doped region extending into the first doped region, a third doped region extending into the first doped region, a first node formed over a portion of the second doped region and coupled to a source terminal and a second node formed over the third doped region and coupled to a drain terminal. The gate-less ESD protection devices can be formed such that no gate electrode is formed and the gate-less ESD protection device does not include a gate terminal. Thus, an operating voltage range of the gate-less ESD protection device is not limited by gate oxide degradation.

Abstract: A magnetic field sensor for sensing motion of a ferromagnetic object comprises a substrate. The substrate includes first and second major surfaces, each having a width dimension and a length dimension. The magnetic field sensor further comprises a magnet. The magnet includes a first major surface proximate to the substrate, the first major surface of the magnet heaving a width and a length, and a second major surface. The magnetic field sensor further includes first and second magnetic field sensing dements. The first magnetic field sensing element and the second magnetic field sensing element are positioned beyond respective ends of the width of the magnet. The second magnetic field sensing element is substantially farther from the ferromagnetic object than the first magnetic field sensing element. A line passing through the first and second magnetic field sensing elements is perpendicular to the magnet axis.

Abstract: A planar Hall effect element be formed upon or can include a the P-type substrate. The planar Hall effect element can also include a Hall plate region. The Hall plate region can include a first portion of an N-type layer disposed over the P-type substrate. The first portion of the N-type layer can include a top surface distal from the P-type substrate, and a continuous N-type outer boundary intersecting the top surface of the Hall plate region. The planar Hall effect element can also include an isolation region having a continuous outer boundary and having a continuous inner boundary, the continuous inner boundary in contact with all of the outer boundary of the Hall plate region, the P-type substrate and the first portion of the N-type layer not forming a P/N junction.

Abstract: A data storage circuit for storing data from volatile memory in response to a power loss, the data storage circuit including an input for receiving a power loss signal in response to a power loss from at least one power source, an input configured to receive data from a volatile memory, a single block of non-volatile matrix of memory cells and a driver circuit coupled to said single row of non-volatile matrix of memory cells. The driver circuit is configured to write data to and read data from said single block of non-volatile matrix of memory cells. The single block of non-volatile matrix of memory cells can be provided as a single row electrically erasable programmable read only memory (EEPROM).

Abstract: A current sensor includes a ferromagnetic core having a substantially central opening for receiving a current conductor and at least two gaps portions, each of the gap portions having an associated gap spacing. A detector of the current sensor includes at least one first sensing element disposed in a first one of the gap portions and configured to generate a respective first magnetic field signal in response to a first magnetic field generated in the first gap portion in response to a current through the current conductor. The detector also includes at least one second sensing element disposed in a second one of the gap portions and configured to generate a respective second magnetic field signal in response to a second magnetic field generated in the second gap portion in response to the current through the conductor. A method of sensing a current through a current conductor is also provided.

Abstract: A joystick assembly for use with a device including a joystick surface and a first magnet having north and south magnetic poles includes a second magnet having north and south magnetic poles and a movable elongated shaft having first and second opposing ends arranged along a major axis of the shaft. The first end of the shaft is coupled to the second magnet such that movement of the shaft results in movement of the second magnet relative to the first magnet such that a line between centers of the north and south magnetic poles of the second magnet is movable relative to a line between the north and south magnetic poles of the first magnet. An attraction of the second magnet to the first magnet results in a restoring force upon the shaft, and the shaft and the second magnet are removable from the joystick surface.

Abstract: A sensor is provided having a magnetic field sensing element to generate a magnetic field signal, a switching circuit coupled to receive the magnetic field signal and generate a switching signal that changes a polarity of the magnetic field signal at a predetermined frequency, and a comparison device configured to receive the switching signal and generate an output signal that changes a level in response to the switching signal crossing a predetermined threshold. The switching circuit is disposed between the magnetic field sensing element and the comparison device and can provide the comparison device an input signal (i.e., the switching signal) that changes polarity at the predetermined frequency. The comparison device can sense characteristics, such as but not limited to crossing operate and release threshold levels, of both north and south polarity magnetic field signals using the switching signal.

Abstract: A tunable fractional phase locked loop (PLL) (hereinafter “tunable PLL”) is described herein and includes a controller configured to tune the tunable PLL to a range of frequencies corresponding to a frequency of the input clock signal. The tunable PLL includes a phase detector configured to receive an input clock signal and a feedback signal, a voltage controller oscillator (VCO) configured to receive the error signal from said phase detector and in response thereto to generate a VCO clock signal, a controller configured to generate a dithered division ratio having an average value corresponding to a ratio of a number of edges of the VCO clock signal generated in a cycle of the input clock signal, and a feedback module configured to generates a feedback signal to tune the PLL such that the PLL operates in the range of input frequencies of the input clock signal.

Abstract: Methods and apparatus for transmitting signals that are magnetically latched at a receiver. In embodiments, a signal isolator comprises a transmitter and a receiver on separate die. Signal disruptions may be minimized. In embodiments, the transmitter and/or receiver can be monitored for proper operation.

Abstract: An electronic circuit includes semiconductor substrate having a first doping type and a reference terminal coupled to the semiconductor substrate. A tub area having a second doping type is formed in the semiconductor substrate. A well area having the first doping type is formed within the tub area. A driver circuit comprising a transistor is formed within the well area and has an output terminal. A control circuit is coupled to the driver circuit for controlling the driver circuit. A second transistor is within the well area and coupled in series between the driver circuit and the output terminal, the second transistor having a first terminal coupled to the driver circuit and a second terminal coupled to the output terminal. A biasing circuit is coupled to a gate terminal of the second transistor and configured to bias the transistor to a conducting state.

Abstract: A magnetic field sensor includes a lead frame, a semiconductor die supporting a magnetic field sensing element, a non-conductive mold material enclosing the die and a portion of the lead frame, a ferromagnetic mold material secured to the non-conductive mold material and a securing mechanism to securely engage the mold materials. The ferromagnetic mold material may comprise a soft ferromagnetic material to form a concentrator or a hard ferromagnetic material to form a bias magnet. The ferromagnetic mold material may be tapered and includes a non-contiguous central region, as may be an aperture or may contain the non-conductive mold material or an overmold material. Further embodiments include die up, lead on chip, and flip-chip arrangements, wafer level techniques to form the concentrator or bias magnet, integrated components, such as capacitors, on the lead frame, and a bias magnet with one or more channels to facilitate overmolding.

Abstract: In one aspect, a magnetic field sensor includes a chopper stabilized amplifier and a plurality of Hall-type elements in parallel and connected to the chopper stabilized amplifier. In another aspect, a magnetic field sensor includes a chopper stabilized amplifier and a plurality of Hall quad elements in parallel and connected to the chopper stabilized amplifier. In a further aspect, a current sensor has a bandwidth of 1 MHz and includes a chopper stabilized amplifier and a plurality of Hall quad elements, fabricated in silicon, in parallel and connected to the chopper stabilized amplifier.

Abstract: A sensor circuit may include one or more feedback loops to process and attenuate ripple and/or a test signal. The sensor circuit may comprise at least one magnetic field sensing element to generate a magnetic field signal representing a magnetic field to be measured, a test signal generator circuit configured to generate a test signal and combine the test signal with the magnetic field signal to generate a combined signal, and a signal path for processing the combined signal. The signal path may comprise an amplifier circuit to amplify the combined signal, an analog-to-digital converter (ADC) to convert the combined signal to a digital combined signal, and a feedback circuitry coupled to receive the digital combined signal and extract the test signal. A test comparator circuit compares the extracted test signal to a reference signal.

Abstract: A sensor circuit is provided with a chopper-stabilized amplifier circuit configured to receive a signal from at least one magnetic sensing element, a sigma-delta modulator (SDM) configured to receive a signal from the chopper-stabilized amplifier circuit, and a feedback circuit configured to reduce ripple in a signal generated by the chopper-stabilized amplifier circuit. The feedback circuit includes a demodulator to demodulate a signal from the SDM in a digital domain by inverting a bit stream of the signal from the SDM according to a frequency chopping rate, a digital integrator configured to integrate an output signal of the demodulator to form an integrated signal, and a digital-to-analog converter (DAC) configured to convert the integrated signal to an analog signal and provide the analog signal to the chopper-stabilized amplifier circuit.

Abstract: A magnetic field sensor includes a lead frame, a semiconductor die having a first surface in which a magnetic field sensing element is disposed and a second surface attached to the lead frame, and a non-conductive mold material enclosing the die and at least a portion of the lead frame. The sensor may include a ferromagnetic mold material secured to a portion of the non-conductive mold material. An electromagnetic suppressor comprising a ferromagnetic material encloses a passive device spaced from the non-conductive mold material and coupled to a plurality of leads.

Abstract: A high voltage driver includes a high-side output transistor circuit, a differential to single-ended (D2SE) converter connected to a gate of the high-side output transistor circuit, wherein the D2SE is supplied by a first and a second supply voltage, and a high voltage translator connected to the D2SE converter. The D2SE converter and the translator circuit are used to clamp a voltage at the gate of the high-side transistor circuit to be the first supply voltage less the second supply voltage.