Abstract: A high voltage driver includes a high-side output transistor circuit, a differential to single-ended (D2SE) converter connected to a gate of the high-side output transistor circuit, wherein the D2SE is supplied by a first and a second supply voltage, and a high voltage translator connected to the D2SE converter. The D2SE converter and the translator circuit are used to clamp a voltage at the gate of the high-side transistor circuit to be the first supply voltage less the second supply voltage.

Abstract: In one aspect, an integrated circuit (IC) includes a first magnetic field sensor configured to sense a ring magnet, a second magnetic field sensor configured to sense the ring magnet and processing circuitry configured to receive a first signal from the first magnetic field sensor and to receive a second signal from the second magnetic field sensor. The processing circuitry is further configured to control an on/off state of at least one light emitting diode (LED) and brightness of the LED based on movement and position of the ring magnet with respect to the first and second magnetic field sensors.

Abstract: Methods and apparatus for positioning a magnetic field sensor IC package having a first channel for a planar magnetic field sensing element and a second channel for vertical magnetic field sensing element in relation to an axis of a ring magnet to provide a desired phase relationship between the first and second channels. In embodiments, positioning the sensor includes an offset angle and a displacement with respect to a centerline of the ring magnet.

Abstract: Systems and methods are described herein for reducing the effects of magnetic field cross-coupling in a multi-conductor current sensor system. A current sensor system includes one or more current sensors, each positioned proximate to at least one conductor and spaced from at least one other conductor. Each conductor carries a current intended to be measured by a respective current sensor. The current sensors include one or more magnetic field sensing elements to generate a magnetic field signal indicative of a detected magnetic field. A characterization measurement is performed to determine the coupling between each current sensor and the respective current conductor and to determine the coupling between the current sensor and the other ones of the current conductors, by providing a reference current to each of the conductors and measuring the outputs at each of the current sensors. The characterization measurement can be used to generate a coupling matrix.

Abstract: An electrical device may include a substrate; a first doped region of the substrate having a p doping type; a second doped region adjacent to the first doped region of the substrate having an n doping type, wherein an interface between the first and second doped regions forms a p-n junction; and a circuit element placed in spaced relation to the p-n junction, the circuit element configured to produce an electric field that interacts with the p-n junction to change a reverse breakdown voltage of the p-n junction. Applicants for the electrical device include ESD protection circuits.

Abstract: In one aspect, a magnetoresistance structure includes a magnetoresistance stack that includes a plurality of layers that includes a first set of one or more magnetoresistance layers and a second set of one or more magnetoresistance layers. The magnetoresistance structure also includes side walls attached to the sides of the first set of one or more magnetoresistance layers and disposed on the second set of one or more magnetoresistance layers.

Abstract: A joystick assembly for use with a device including a joystick surface and a first magnet having north and south magnetic poles includes a second magnet having north and south magnetic poles and a movable elongated shaft having first and second opposing ends arranged along a major axis of the shaft. The first end of the shaft is coupled to the second magnet such that movement of the shaft results in movement of the second magnet relative to the first magnet such that a line between centers of the north and south magnetic poles of the second magnet is movable relative to a line between the north and south magnetic poles of the first magnet. An attraction of the second magnet to the first magnet results in a restoring force upon the shaft, and the shaft and the second magnet are removable from the joystick surface.

Abstract: An integrated circuit includes a lead frame having a die attach paddle with a slot extending through the die attach paddle from a first surface to a second surface. A plurality of semiconductor die are positioned such that a channel is formed between the first, second, and third semiconductor die and the slot of the die attach paddle. A mold material encloses the plurality of semiconductor die and at least a portion of the lead frame and is disposed in the channel such that the second surface of the die attach paddle is substantially flush with the mold material. A method of forming an integrated circuit is also provided.

Abstract: Magnetic field sensors can sense speed of movement and direction of movement of a ferromagnetic object. The magnetic field sensors employ both planar Hall effect elements and vertical Hall effect elements to generate two-state signals in two different signal paths with relative phases that are ninety degrees apart, the ninety degrees having sufficient margin to aid in detection of the direction of motion. Other magnetic field sensors use at least four vertical Hall effect elements to identify a speed of rotation and a direction of rotation of a moving ferromagnetic object.

Abstract: Described embodiments provide circuits, systems and methods for generating a sensing signal in response to the ambient condition, comparing the sensing signal to a threshold hysteresis range to generate a digital signal, and upon powering on the sensor, determining whether the sensing signal is within the threshold hysteresis range and, if the sensing signal is within the threshold hysteresis range, setting the digital signal to a predetermined level based on a hysteresis restoration state associated with sensor before the sensor is powered off.

Abstract: Magnetic field sensors can sense speed of movement and direction of movement of a ferromagnetic object. The magnetic field sensors employ both planar Hall effect elements and vertical Hall effect elements to generate two-state signals in two different signal paths with relative phases that are ninety degrees apart, the ninety degrees having sufficient margin to aid in detection of the direction of motion. Other magnetic field sensors use at least four vertical Hall effect elements to identify a speed of rotation and a direction of rotation of a moving ferromagnetic object.

Abstract: A circuit for detecting motion of an object includes a semiconductor substrate having first and second opposing surfaces. The circuit also includes a magnetic field sensor disposed on the first surface of the substrate and configured to generate a respective plurality of magnetic field sensor output signals in response to a magnetic field associated with the object. At least one of the magnetic field sensor output signals is indicative of an angular position of the magnetic field with respect to the sensor. Additionally, at least one of the magnetic field sensor output signals is indicative of an amplitude of the magnetic field.

Abstract: In one aspect, an integrated circuit (IC) includes a sensor that includes a first magnetoresistive (MR) element and a second MR element less active to a presence of a magnetic field than the first MR element. The second MR element includes a metal layer diffused into other layers of the second MR element.

Abstract: Systems, methods, and techniques described here provide for a hybrid electrically erasable programmable read-only memory (EEPROM) that functions as both a single polysilicon EEPROM and a double polysilicon EEPROM. The two-in-one hybrid EEPROM can be programmed and/or erased as a single polysilicon EEPROM and/or as a double polysilicon EEPROM. The hybrid EEPROM memory cell includes a programmable capacitor disposed on a substrate. The programmable capacitor includes a floating gate forming a first polysilicon layer, an oxide-nitride-oxide (ONO) layer having disposed over a first surface of the floating gate, and a control gate forming a second polysilicon layer with the control gate formed over a first surface of the ONO layer to form a hybrid EEPROM having a single polysilicon layer and a double polysilicon EEPROM. The single polysilicon EEPROM includes the first polysilicon layer and the double polysilicon EEPROM includes the first and second polysilicon layers.

Abstract: A double pinned magnetoresistance element has a temporary ferromagnetic layer, two PtMn antiferromagnetic pinning layers, and two associated synthetic antiferromagnetic (SAF) pinned layer structures, the temporary ferromagnetic layer operable to improve annealing of the two PtMn antiferromagnetic pinning layers and the two associated SAFs to two different magnetic directions that are a relative ninety degrees apart.

Abstract: An electronic device includes a package, a plurality of external leads extending outside the package, a first die within the package having one or more first contacts electrically coupled to at least a first one of the external leads, and a second die within the package having one or more second contacts electrically coupled to at least a second one of the external leads. A capacitive coupling may be positioned between the first and second die to allow electrostatic discharge (ESD) current to flow between the first die and the second die in response to an ESD event and to electrically isolate the first and second die from each other in the absence of the ESD event.

Abstract: A control circuit includes an oscillator responsive to a control voltage to generate a clock signal having an associated frequency. A counter is responsive to the clock signal to generate a count signal and a comparator is responsive to the count signal and to a threshold signal to generate a comparison signal. The control circuit farther includes a delay line comprising a plurality of series coupled delay elements, each responsive to the comparison signal and to the control voltage to generate a phase shifted signal at a respective delay line output. A latch is responsive to a selected phase shifted signal to generate a control signal having edges occurring in response to edges of a signal used to set the latch and in response to the selected phase shifted signal to reset the latch. A method for generating a control signal in a control circuit is also provided.

Abstract: A back-biased magnetic field sensor uses one or more magnetic field sensing elements upon a substrate, each outside of a substrate region in which magnetic field lines are near perpendicular to the substrate and outside of which magnetic field lines are not to the substrate. The back-biased magnetic field sensor can sense an approaching and/or a retreating ferromagnetic object.

Abstract: An electronic comparison circuit can identify at least three conditions of an input signal received by the electronic comparison circuit. A first one of the at least three conditions occurs when a value of the input signal is less than a first threshold value, a second one of the at least three conditions occurs when a value of the input signal is greater than the first threshold value and less than a second threshold value, and a third one of the at least three conditions occurs when a value of the input signal is greater than the second threshold value. A magnetic field sensor can use the electronic comparison circuit.

Abstract: A ground fault detection circuit is configured to detect a ground fault in a circuit or system that has more than one ground reference. In an embodiment, an electronic circuit includes a first circuit coupled to a first ground node. The first ground node is coupled to a first ground reference. The electronic circuit also includes a second circuit coupled to a second ground node. The second ground node is coupled to a second ground reference. The ground fault detection circuit is configured to detect an open circuit between the first ground node and the first ground reference or between the second ground node and the second ground reference by comparing a voltage at the first ground node to a voltage at the second ground reference or comparing a voltage at the second ground node to a voltage at the first ground reference.