Abstract: Various technologies described herein pertain to combining high dynamic range techniques to enable rendering higher dynamic range scenes with an image sensor. The image sensor can implement a combination of spatial exposure multiplexing and temporal exposure multiplexing, for example. By way of another example, the image sensor can implement a combination of spatial exposure multiplexing and dual gain operation. Pursuant to another example, the image sensor can implement a combination of temporal exposure multiplexing and dual gain operation. In accordance with yet another example, the image sensor can implement a combination of spatial exposure multiplexing, temporal exposure multiplexing, and dual gain operation.

Abstract: An image sensor having global shutter circuitry and an extremely fine pixel pitch. Disclosed image sensors combine global shutter circuitry with rolling shutter circuitry for respective subsets of sensor pixels to marry imaging benefits of global shutter circuitry with relatively small circuit overhead of rolling shutter circuitry. Such image sensors can achieve improved optical performance with smaller pixel pitch and optical resolution than existing global shutter image sensors.

Abstract: Providing for operation of high-speed optical sensor equipment at full data path speeds in conjunction with testing equipment operating at a lower speed is described herein. By way of example, a data stream output from optical sensor equipment to testing equipment can be throttled at a serial interface between such equipment. Throttling can involve subdividing a set of pixel data and outputting a subset of the pixel data in a given readout frame. Consecutive outputs of respective subsets of pixel data are initiated with an offset from the previous readout frame. Accordingly, the optical sensor equipment can be operated at full speeds, simulating realistic operational conditions, while slower testing equipment can be utilized to perform data analytics, heuristics, and other quality tests on various portions of the optical sensor equipment.

Abstract: An image sensor architecture provides an SNR in excess of 100 dB, without requiring the use of a mechanical shutter. The circuit components for an active pixel sensor array are separated and arranged vertically in at least two different layers in a hybrid chip structure. The top layer is preferably manufactured using a low-noise PMOS manufacturing process, and includes the photodiode and amplifier circuitry for each pixel. A bottom layer is preferably manufactured using a standard CMOS process, and includes the NMOS pixel circuit components and any digital circuitry required for signal processing. By forming the top layer in a PMOS process optimized for forming low-noise pixels, the pixel performance can be greatly improved, compared to using CMOS. In addition, since the digital circuitry is now separated from the imaging circuitry, it can be formed using a standard CMOS process, which has been optimized for circuit speed and manufacturing cost.

Abstract: An image sensor architecture provides an SNR in excess of 100 dB, without requiring the use of a mechanical shutter. The circuit components for an active pixel sensor array are separated and arranged vertically in at least two different layers in a hybrid chip structure. The top layer is preferably manufactured using a low-noise PMOS manufacturing process, and includes the photodiode and amplifier circuitry for each pixel. A bottom layer is preferably manufactured using a standard CMOS process, and includes the NMOS pixel circuit components and any digital circuitry required for signal processing. By forming the top layer in a PMOS process optimized for forming low-noise pixels, the pixel performance can be greatly improved, compared to using CMOS. In addition, since the digital circuitry is now separated from the imaging circuitry, it can be formed using a standard CMOS process, which has been optimized for circuit speed and manufacturing cost.

Abstract: An image sensor architecture provides an SNR in excess of 100 dB, without requiring the use of a mechanical shutter. The circuit components for an active pixel sensor array are separated and arranged vertically in at least two different layers in a hybrid chip structure. The top layer is preferably manufactured using a low-noise PMOS manufacturing process, and includes the photodiode and amplifier circuitry for each pixel. A bottom layer is preferably manufactured using a standard CMOS process, and includes the NMOS pixel circuit components and any digital circuitry required for signal processing. By forming the top layer in a PMOS process optimized for forming low-noise pixels, the pixel performance can be greatly improved, compared to using CMOS. In addition, since the digital circuitry is now separated from the imaging circuitry, it can be formed using a standard CMOS process, which has been optimized for circuit speed and manufacturing cost.

Abstract: Systems and methods are provided to implement a state map to control operations of a complementary metal-oxide-semiconductor (CMOS) sensor. The state map can be a table comprising one or more locations. Each of the locations can comprise a destination state to define the operations of the sensor and an exit criterion to advance to a next location in the state map. For example, an operation sequence can be implemented using the state map to instruct the CMOS sensor to perform a specific set of operations. Further, a data value to represent the destination state and/or a variable input can be stored in a writable address of a register. Thus, a simplified architecture can be provided to implement CMOS sensor operation states, for instance, to improve interactions between real time and non-real time signals and to increase functionality of the CMOS sensor.

Abstract: Aspects describe front-end pixel fixed pattern noise correction in imaging arrays having wide dynamic range. A photosensor of a first pixel in a first row of an array is reset and a first reset level of the first pixel is measured. The array comprises a plurality of pixels arranged in rows and columns. In response to a result of the first reset level, a reset bus is altered. A feed-forward adjustment of the photosensor of the first pixel is performed to substantially remove fixed-pattern noise. An external readout from the photosensor can occur with substantially all the fixed-pattern noise removed. In some aspects, the adjustment is performed by a switched capacitor block.

Abstract: Various technologies described herein pertain to defect pixel correction for image data collected by a pixel array of an image sensor. Neighborhood statistics for a given pixel from the image data are computed based on values of neighbor pixels of the given pixel from the image data. Whether the value of the given pixel is defective is detected based on the neighborhood statistics. The value of the given pixel is replaced when detected to be defective to output modified image data. Correction of the given pixel is a function of whether the given pixel is in a flat region or a non-flat region. When the given pixel is defective and in a non-flat region, a minimum edge across the given pixel is identified and the value of the given pixel is replaced with an average of values of neighbor pixels that belong to the minimum edge.

Abstract: Providing for analog averaging of optical black pixels of an image sensor is described herein. By way of example, optical black pixel signals can be output by a row of pixels and provided in a parallel manner to a readout circuit. The readout circuit can include an averaging circuit that, when activated, generates an analog average of signals received at the readout circuit. The analog average can be sampled at any suitable signal output of the readout circuit, or multiple samples can be acquired to mitigate temporal noise, improve yield, and so on. By utilizing analog averaging, optical black pixel information can be obtained much more quickly than with digital counterparts, and optical black pixels can be fully utilized, as well as utilized more flexibly, in generating the black pixel output. Further sensor die size can be reduced, by replacing digital adders, dividers or shifters with the averaging circuit.

Abstract: An image sensor architecture provides an SNR in excess of 100 dB, without requiring the use of a mechanical shutter. The circuit components for an active pixel sensor array are separated and arranged vertically in at least two different layers in a hybrid chip structure. The top layer is preferably manufactured using a low-noise PMOS manufacturing process, and includes the photodiode and amplifier circuitry for each pixel. A bottom layer is preferably manufactured using a standard CMOS process, and includes the NMOS pixel circuit components and any digital circuitry required for signal processing. By forming the top layer in a PMOS process optimized for forming low-noise pixels, the pixel performance can be greatly improved, compared to using CMOS. In addition, since the digital circuitry is now separated from the imaging circuitry, it can be formed using a standard CMOS process, which has been optimized for circuit speed and manufacturing cost.

Abstract: An image sensor architecture for an active pixel sensor array are separated and arranged vertically in at least two different layers in a hybrid chip structure. The top layer includes the photodiode and amplifier circuitry for each pixel. A bottom includes the pixel circuit components and any digital circuitry required for signal processing. By forming the top layer in a process optimized for forming low-noise pixels, the pixel performance can be greatly improved. In addition, since the digital circuitry is now separated from the imaging circuitry, it can be formed using a process which has been optimized for circuit speed and manufacturing cost. By combining the two layers into a stacked structure, the top layer (and any intermediate layer(s)) acts to optically shield the lower layer, thereby allowing charge to be stored and shielded without the need for a mechanical shutter.

Abstract: Providing for operation of high-speed optical sensor equipment at full data path speeds in conjunction with testing equipment operating at a lower speed is described herein. By way of example, a data stream output from optical sensor equipment to testing equipment can be throttled at a serial interface between such equipment. Throttling can involve subdividing a set of pixel data and outputting a subset of the pixel data in a given readout frame. Consecutive outputs of respective subsets of pixel data are initiated with an offset from the previous readout frame. Accordingly, the optical sensor equipment can be operated at full speeds, simulating realistic operational conditions, while slower testing equipment can be utilized to perform data analytics, heuristics, and other quality tests on various portions of the optical sensor equipment.

Abstract: Various technologies described herein pertain to automatically adjusting the strength of a voltage booster of an image sensor. A self-scaled voltage booster includes a regulator, a controller, and two or more charge pumps that can be selectively enabled and disabled by the controller. The controller generates controller signals for the charge pumps based on a duty cycle of a regulator signal generated by the regulator. Moreover, the controller can maintain the controller signals without modification for at least a predetermined minimum period of time after a prior modification of at least one of the controller signals. Further, the controller can include a duty cycle and delay module (or a plurality of duty cycle and delay modules) that detects the duty cycle of the regulator signal and maintains the controller signals without modification for at least the predetermined minimum period of time.

Abstract: Aspects relate to improved optically black reference pixels in a CMOS iSoc sensor. A system can include a pointer P1 that indicates pixels to be read out during a readout time interval, a pointer P2 that indicates pixels to be reset during the time interval, and a pointer P3 that preserves a validity of a frame. The system also includes a pointer P4 configured to mitigate an integration time of column fixed pattern noise (FPN) rows independently of the integration time of other rows. In some aspects, pointer P4 can mitigate blooming into sampled rows from surrounding rows. Pointer P4 can be continuously rotated, in an aspect. Further, in some aspects, pointer P4 can jump on a second cycle to arrive one line before pointer P1.

Abstract: Various technologies described herein pertain to defect pixel correction for image data collected by a pixel array of an image sensor with spatially arranged exposures. The pixel array includes a first subset of pixels having a first exposure time and a second subset of pixels having a second exposure time. An exposure ratio (ratio of first exposure time to second exposure time) is received. A value of at least a particular neighbor pixel of a given pixel from the image data is adjusted based upon the exposure ratio. Neighborhood statistics for the given pixel from the image data are computed based on values of neighbor pixels of the given pixel from the image data as adjusted. Whether the value of the given pixel is defective is detected based on the neighborhood statistics. The value of the given pixel is replaced when detected to be defective to output modified image data.

Abstract: Various technologies described herein pertain to controlling floating diffusion gain using a charge pump. Feedback can be utilized to control impedance of a floating diffusion region of a pixel of an image sensor, which further includes a read bus and an amplifier. The pixel includes a capacitor and a floating diffusion region, which has an intrinsic floating diffusion capacitance. The capacitor includes a first terminal and a second terminal, where the first terminal is coupled to the floating diffusion region. The amplifier includes an input terminal and an output terminal. The input terminal of the amplifier is coupled to the read bus and the output terminal of the amplifier is coupled to the second terminal of the capacitor. Gain of the amplifier is adjustable to control an equivalent capacitance of the floating diffusion region. Alteration of the equivalent capacitance can modify conversion gain and dynamic range of the pixel.

Abstract: Various technologies described herein pertain to defect pixel correction for image data collected by a pixel array of an image sensor. Neighborhood statistics for a given pixel from the image data are computed based on values of neighbor pixels of the given pixel from the image data. Whether the value of the given pixel is defective is detected based on the neighborhood statistics. The value of the given pixel is replaced when detected to be defective to output modified image data. Correction of the given pixel is a function of whether the given pixel is in a flat region or a non-flat region. When the given pixel is defective and in a non-flat region, a minimum edge across the given pixel is identified and the value of the given pixel is replaced with an average of values of neighbor pixels that belong to the minimum edge.

Abstract: Providing for pausing data readout from an optical sensor array is described herein. By way of example, an interruption period can be introduced into a readout cycle of the optical sensor array to suspend readout of data. During the interruption period, other operations related to the optical sensor array can be performed, including operations that are typically detrimental to image quality. Moreover, these operations can be performed while mitigating or avoiding negative impact on the image quality. Thus, greater flexibility is provided for global shutter operations, for instance, potentially improving frame rates and fine control of image exposure, while preserving image quality.

Abstract: Various technologies described herein pertain to defect pixel correction for image data collected by a pixel array of an image sensor with spatially arranged exposures. The pixel array includes a first subset of pixels having a first exposure time and a second subset of pixels having a second exposure time. An exposure ratio (ratio of first exposure time to second exposure time) is received. A value of at least a particular neighbor pixel of a given pixel from the image data is adjusted based upon the exposure ratio. Neighborhood statistics for the given pixel from the image data are computed based on values of neighbor pixels of the given pixel from the image data as adjusted. Whether the value of the given pixel is defective is detected based on the neighborhood statistics. The value of the given pixel is replaced when detected to be defective to output modified image data.