Abstract: In at least one embodiment, the optoelectronic semiconductor chip including a semiconductor layer sequence, in which there is at least one active zone for generating radiation; and a first electrode and a second electrode, with which the semiconductor layer sequence is in electrical contact; wherein the semiconductor layer sequence has, in the region of the active zone, at least one obliquely extending facet designed for a beam deflection of the radiation; wherein the first electrode and the second electrode are on the same mounting side of the semiconductor layer sequence as the at least one obliquely extending facet, and the mounting side is a main side of the semiconductor layer sequence; and wherein the radiation is coupled out on an emission side of the semiconductor layer sequence opposite from the mounting side.

Abstract: The invention relates to a method for producing an optoelectronic semiconductor chip, component, including the following steps: —providing an epitaxial semiconductor layer sequence with an active zone, which is configured to generate electromagnetic radiation during operation, —structuring the epitaxial semiconductor layer sequence so that at least one lateral surface is produced in the epitaxial semiconductor layer sequence, —introducing aluminum atoms at the lateral surface into the epitaxial semiconductor layer sequence, so that a band gap of the active zone at the lateral surface is increased. The invention also relates to an optoelectronic semiconductor chip.

Abstract: The invention relates to a laser diode arrangement for a laser projection device, comprising a carrier; a laser diode array arranged on the carrier, comprising a first light group having a plurality of first laser diodes and a second light group having a plurality of second laser diodes, said first light emitting group emitting polarized electromagnetic radiation having a first polarization direction and said second light emitting group emitting polarized electromagnetic radiation having a second polarization direction, said first polarization direction and said second polarization direction being perpendicular to each other, the invention being characterized in that said first light emitting group comprises at least one first laser housing accommodating at least one first laser diode and said second light emitting group comprises at least one second laser housing accommodating at least one second laser diode; and the number of first laser diodes of the laser diode array is at least twice the number of second

Abstract: A surface-emitting semiconductor laser includes a first semiconductor layer of a first conductivity type, an active zone which is suitable for generating electromagnetic radiation, an ordered photonic structure, and a second semiconductor layer of a second conductivity type. The active zone is arranged between the first and second semiconductor layers. The ordered photonic structure is formed in the first semiconductor layer, and a part of the first semiconductor layer is adjacent to both sides of the ordered photonic structure. Alternatively, the ordered photonic structure is arranged in an additional semiconductor layer between the active zone and the second semiconductor layer. A part of the additional semiconductor layer is arranged between the ordered photonic structure and the second semiconductor layer.

Abstract: The invention relates to an optoelectronic semiconductor component that includes a semiconductor body with a first injection region, in which a first protection region is formed, a second injection region, in which a second protection region is formed, and an active region, which is designed to generate electromagnetic radiation and which is arranged between the first injection region and the second injection region. The first injection region and the first protection region have a first conductivity type, and the second injection region and the second protection region have a second conductivity type. The first protection region extends along a lateral surface of the semiconductor body from a first injection region face facing away from the active region into the second injection region and completely passes through the active region. The invention additionally relates to a method for producing an optoelectronic semiconductor component.

Abstract: The invention relates to a method for producing a plurality of semiconductor lasers, including the steps of: a) providing a substrate having a semiconductor layer sequence and having a plurality of component regions, each component region having at least one resonator region and being delimited perpendicular to the resonator region by singulation lines in the transverse direction and being delimited parallel to the resonator region by singulation lines in the longitudinal direction; b) forming recesses which overlap with the singulation lines in the transverse direction, using a dry-chemical etching method, wherein, when the substrate is seen from above, the recesses have in each case at least one transition, at which a first section of a side face of the recess and a second section of the side face of the recess form an angle of more than 180° in the recess; c) wet-chemical etching of the side faces of the recesses for the purpose of forming resonator surfaces; and d) singulating the substrate along the sing

Abstract: The invention relates to an optoelectronic device having at least two emission regions and having a radiation exit face, the emission regions each having an active region provided to generate radiation, the active regions of the emission regions being arranged in a common emitter plane. The emission regions are each assigned a portion of the radiation exit face through which portion the radiation emitted by the respective emission region exits, wherein the radiation exit face is formed at least in part by a radiation-permeable body which is arranged on at least one of the emission regions, and wherein the portions of the radiation exit face are arranged at differing distances from the common emitter plane.

Abstract: In a method of manufacturing a package, in particular an injection molded circuit carrier, MID, at least one injection molded cover plate forming a cavity is provided having a cover area and a perimeter defining the cover area; wherein the cover area includes an opening. Two conductive traces having a first portion on a top edge of the surround, a second portion on a side surface of the surround, and a third portion on the cover area are formed, and then an optical element is formed in the opening of the cover area. Finally, a loop-shaped interlock circuit is applied to the optical element in an edge portion between the opening and the cover area, wherein one end of the loop-shaped interlock circuit is connected to each of the first and second conductive paths.

Abstract: A radiation-emitting semiconductor chip includes a semiconductor layer sequence having an active layer for generating electromagnetic radiation. The semiconductor chip also includes a reflector at a side surface of the semiconductor layer sequence having a reflector surface facing the semiconductor layer sequence and extending obliquely with respect to the active layer. The semiconductor chip further includes a top surface extending transversely with respect to the reflector surface and having a first emission region. The semiconductor chip additionally includes a further reflector situated opposite the reflector. The semiconductor chip is configured such that electromagnetic radiation generated in the active layer during operation is reflected by the reflector and emerges from the semiconductor chip via the emission region of the top surface. A main emission direction of the emerging electromagnetic radiation together with the active layer form an emergence angle of between 30° and 80° inclusive.

Abstract: The invention relates to a radiation-emitting laser component including:—an edge-emitting laser diode which is designed to generate electromagnetic laser radiation, and—a substrate, on which the edge-emitting laser diode is arranged, wherein—the edge-emitting laser diode has a contact layer,—the substrate has a substrate web, and—the contact layer is connected to the substrate web by means of a solder layer in a mechanically stable manner. The invention also relates to a method for producing a radiation-emitting laser component.

Abstract: The invention relates to an optoelectronic component including a semiconductor chip having a coupling-out facet that emits electromagnetic primary radiation during operation, —a functional layer, wherein the coupling-out facet is at least partially covered by the functional layer, and —the functional layer is a catalytic layer. The invention also relates to a method for producing an optoelectronic component.

Abstract: A method for producing a plurality of semiconductor lasers is specified, including the steps of: a) providing a substrate having a semiconductor layer sequence and having a plurality of component regions, each component region having at least one resonator region and being delimited perpendicular to the resonator region by singulation lines in the transverse direction and being delimited parallel to the resonator region by singulation lines in the longitudinal direction; b) forming recesses which overlap with the singulation lines in the transverse direction, using a dry-chemical etching method; c) wet-chemical etching of the side faces of the recesses for the purpose of forming resonator surfaces; and d) singulating the substrate along the singulation lines in the transverse direction and in the longitudinal direction. Additionally, a semiconductor laser is specified.

Abstract: A method for producing a planar light circuit is specified. The method comprises: providing a substrate free of light producing regions, depositing a waveguide layer, applying a photostructurable mask on the waveguide layer, photostructuring of the photostructurable mask such that the photostructurable mask is removed in regions, etching of the waveguide layer in the regions such that channels are produced in the waveguide layer, wherein the channels confine waveguides, removal of the photostructurable mask layer, and singulating into a planar light circuit. Furthermore, a planar light circuit is specified.

Abstract: The invention relates to an optoelectronic device including a first current spreading layer made of a semiconductor material of a first conductivity type, an active layer which is arranged on the first current spreading layer for generating light, a second current spreading layer which is arranged on the active layer and is made of a semiconductor material of a second conductivity type, a contact layer which is arranged on the second current spreading layer, a roughened layer which is arranged on the contact layer and comprises a roughened surface for coupling out light generated in the active layer, and a metal layer which is arranged on the contact layer.

Abstract: In at least one embodiment, the environment sensor for sensing at least one environment parameter includes a semiconductor layer sequence, a sheath, the index of refraction of which changes as a function of the environment parameter, and a first electrical contact and a second electrical contact for supplying current to the semiconductor layer sequence. The semiconductor layer sequence has the shape of a generalized cylinder having a main axis. In directions perpendicular to the main axis, the semiconductor layer sequence is at least partly covered by the sheath. The semiconductor layer sequence has an index of refraction which is greater than the index of refraction of the sheath. The semiconductor layer sequence is designed to form laser modes within the environment sensor.

Abstract: An optoelectronic semiconductor component is specified, including at least one layer stack having - an active zone for generating electromagnetic radiation, - at least one aluminum-containing current constriction layer including a first region and a second region, the second region having a lower electrical conductivity than the first region, and - a side surface which laterally delimits the layer stack and at which the second region is arranged, the second region being an oxidized region. A method for producing an optoelectronic semiconductor component is furthermore specified.

Abstract: The invention relates to a component with a main part and a contact structure. The main part has an active zone which is designed to generate electromagnetic radiation at least in some regions during the operation of the component. The contact structure has a plurality of individually actuatable segments. The component has a connection surface and a lateral surface running transversely to the connection surface, and the lateral surface is designed as a radiation passage surface of the component. The connection surface is designed to be structured, wherein the connection surface is defined by common internal boundary surfaces between the main part and the contact structure, and each segment has a local common boundary surface with the main part and is designed for a pixelated current impression into the main part. The invention additionally relates to a method for operating such a component.

Abstract: The invention relates to an optoelectronic laser device which includes: a first set of edge-emitting laser diodes, the first set of edge-emitting laser diodes having one or more first laser diodes, each of which has a first light emission region for laser light on a side face, and a second set of edge-emitting laser diodes, the second set of edge-emitting laser diodes having one or more second laser diodes, each of which has a second laser emission region for laser light on a side face, wherein the side faces of the first and second laser diodes lie at least substantially in the same plane, wherein a particular second laser diode (21b, 21d, 21f) is allocated to a particular first laser diode, and wherein the light emission regions of the first and of the allocated second laser diode are arranged at a distance from each other which is smaller than 10 ?m, preferably smaller than 5 ?m, further preferably smaller than 3 ?m, and even further preferably smaller than 2 ?m.

Abstract: Disclosed is a method for producing a radiation-emitting semiconductor chip including the steps:—providing a semiconductor layer sequence having an active region which is designed for generating electromagnetic radiation,—producing a first recess in the semiconductor layer sequence, which fully penetrates the active region,—producing a first structure in the first recess, wherein—at least a lateral surface of the first structure facing the active region extends obliquely to at least a first lateral surface of the semiconductor layer sequence, and—the first structure is spaced apart in lateral directions from the active region. Also disclosed is a radiation-emitting semiconductor chip.

Abstract: An image element is disclosed having first and second supply terminals, a light emitting semiconductor component, a driver circuit comprising a driver transistor, a storage capacitor, and a switching transistor, and a trigger circuit comprising an output transistor and a control capacitor. The light emitting semiconductor component and the driver transistor are arranged in series with each other and between the first supply terminal and the second supply terminal. A first electrode of the storage capacitor is coupled to a control terminal of the driver transistor. The switching transistor is configured to switch on and off a current flow through the light emitting semiconductor component. A first electrode of the control capacitor is connected to a control terminal of the output transistor. A first terminal of the output transistor is connected to a control terminal of the switching transistor. Furthermore, a method for operating an image element, in particular such an image element, is disclosed.