Abstract: An optoelectronic device is specified, including an emitter, operated with an electrical input voltage and configured to emit electromagnetic radiation during operation, a receiver, configured to convert electromagnetic radiation emitted by the emitter to an output voltage, wherein the receiver includes a semiconductor layer sequence with a plurality of stacked active layers, electromagnetic radiation emitted by the emitter is coupled into the receiver via a first side face of the semiconductor layer sequence, and the electromagnetic radiation propagates parallel to a main extension plane of the active layer inside the active layer, where it is gradually absorbed and converted into an electrical voltage.

Abstract: The invention relates to a surface-emitting semiconductor laser, including a first semiconductor layer of a first conductivity type, the first semiconductor layer being structured forming a mesa, an active zone for generating electromagnetic radiation and a second semiconductor layer of a second conductivity type. The first semiconductor layer, the active zone and the second semiconductor layer are arranged on top of one another forming a semiconductor layer stack. The surface-emitting semiconductor laser further comprises a sheath layer which adjoins a lateral wall of the mesa.

Abstract: The invention relates to a time-of-flight selective flash LiDAR system comprising an emitter for emitting pulsed illumination radiation into an object space; a detection unit with an image sensor for detecting the radiation reflected back from the object space; and a sensor control device for time-of-flight selection, wherein the sensor control device is configured such that the back-reflected radiation is detected separately from a first measuring surface and a second measuring surface and wherein the second measuring surface is located at a greater distance from the detection unit than the first measuring surface.

Abstract: Aspects relate to an optoelectronic semiconductor component comprising a semiconductor body having an optically active region designed to emit or detect electromagnetic radiation, a support, a molded body, and a prefabricated optical shielding with a support structure and a diaphragm. The semiconductor body and the molded body are arranged on the front face of the support. The molded body at least partly surrounds the semiconductor body in a lateral direction, and the optical shielding is arranged on the molded body face facing away from the support and projects beyond the molded body in the lateral direction in the direction of the semiconductor body. The diaphragm has an opening which is oriented towards the optically active region. Additionally, an insulating structure is arranged adjacently to the semiconductor body, the insulating structure at least partly surrounding the semiconductor body. Aspects also relate to a method for producing the optoelectronic semiconductor component.

Abstract: An optoelectronic component includes a housing. An optical element and a semiconductor laser are arranged along a common optical axis within the housing. The semiconductor laser is designed to generate, by means of a laser process, a light beam having a diffraction-limited divergence such that the light beam is substantially collimated on the optical element.

Abstract: In an embodiment a method includes providing a substrate having at least one conductor track situated thereon, applying at least one accumulation of an electrically conductive material to a surface of the conductor track, providing a carrier having at least one electrical contact, applying an electrically conductive adhesive to the at least one accumulation of the electrically conductive material and/or the at least one electrical contact and arranging the substrate and the carrier such that the accumulation of the electrically conductive material and the at least one electrical contact are situated opposite and at a distance from one another, wherein the electrically conductive adhesive forms a mechanical and electrical connection between the accumulation of the electrically conductive material and the at least one electrical contact, and wherein an interspace between the at least one accumulation of the electrically conductive material and the at least one electrical contact is filled with the electrically

Abstract: A method for the time-differentiated detection of a spectrum of a test object comprises providing a first conversion dye, which is configured to convert light with a first spectral distribution in the visible range into light with a second spectral distribution in the infrared range. The first conversion dye is excited with a light pulse in the range of the first spectral distribution during a first time period, and a light fraction, reflected or transmitted by the test object, in the range of the first spectral distribution is registered during a first time interval. During a subsequent second time period, a fraction of converted light reflected or transmitted by the test object is registered. According to the invention, the first time interval is selected so that it lies substantially inside a luminescence lifetime for the first conversion dye in the first time period.

Abstract: An optical sensor arrangement, for example for a LiDAR system, includes an emitter unit and a receiver unit. The emitter unit includes a semiconductor laser configured to emit coherent electromagnetic radiation having at least two wavelengths. Furthermore, the emitter unit is configured to direct the emitted electromagnetic radiation at a remote target, the receiver unit including at least one optical sensor configured to selectively detect electromagnetic radiation depending on the at least two wavelengths. The receiver unit is arranged relative to the emitter unit and configured such that electromagnetic radiation scattered or reflected by the remote target is detectable on the optical sensor.

Abstract: A semiconductor chip with a structured chip back side is specified, the chip back side being configured for electrical and thermal linking of the semiconductor chip, the semiconductor chip having emitter regions configured for producing electromagnetic radiation and the structured chip back side having connection pads configured for electrical linking of the emitter regions. The connection pads are p-contacts or n-contacts, with, in a plan view, all connection pads (which are configured either as p-contacts or as n-contacts overlapping with at least two of the emitter regions in each case and each of these connection pads being configured for electrical linking of only one of the emitter regions. Moreover, a component is specified, in particular comprising at least one such semiconductor chip.

Abstract: The disclosed optoelectronic semiconductor chip includes a carrier, a semiconductor layer sequence on the carrier having at least one active zone for generating radiation, a layer of high optical refractive index on an output coupling facet of the semiconductor layer sequence for the output coupling of radiation, and a coating of low optical refractive index directly on an outer side of the layer of high optical refractive index for the total internal reflection of the radiation, wherein the semiconductor layer sequence is configured to guide the radiation in the active zone perpendicularly to a growth direction of the semiconductor layer sequence, and the layer of high optical refractive index is configured to deflect the radiation at the outer side parallel to the growth direction.

Abstract: An optoelectronic component includes a stacked arrangement including a photonic crystal and a gain medium. The gain medium includes a layer sequence composed of two quantum wells and at least one tunnel diode and is set up to emit an electromagnetic wave. The photonic crystal is electromagnetically coupled to the gain medium. The stacked arrangement is disposed on a substrate. Alternatively or additionally, the gain medium includes at least one quantum well. The photonic crystal is structured in a dielectric layer and electromagnetically coupled to the gain medium.

Abstract: The invention relates to an optoelectronic assembly with an optoelectronic component with two or more connecting contacts for feeding supply and/or control signals. A housing with a two-dimensional structured underside has two or more solder pads which are each surrounded by a non-wettable region, wherein the solder pads are guided through the underside of the housing and are connected to the plurality of connecting contacts. Furthermore, the underside of the housing comprises two or more solder surfaces which are each surrounded by a non-wettable region. The two or more solder pads and the solder surfaces are thereby substantially uniformly distributed over the underside of the housing.

Abstract: The invention relates to a semiconductor laser device a surface emitting semiconductor laser element having a GaN-containing compound semiconductor layer and a converter. The converter is adapted to convert a wavelength of laser radiation emitted from the surface emitting semiconductor laser element.

Abstract: An optoelectronic sensing device may include an optoelectronic detection device configured to detect light and provide an electrical signal as a function of detected light. The device may further include a signal detection device configured to store at least one signal value of the electrical signal in a memory during a time interval of repeating time intervals and to output an indication signal after the time interval has elapsed.

Abstract: Disclosed is an optoelectronic semiconductor component including at least one optoelectronic semiconductor chip in an interior of a housing; the housing has a base part and a top part, the base part is a ceramic support, the top part is made of one or more glass materials, a connection layer that is made of a solder glass is arranged between the base part and the top part, and the ceramic support includes a connection portion with a nickel-containing surface which is in direct contact with the solder glass.

Abstract: In an embodiment a photodiode includes a semiconductor body having a light entrance side and a back side opposite the light entrance side, a first electrode at the light entrance side atop a first doped area of a first conductivity type, a second electrode at the light entrance side atop a second doped area of a second conductivity type, the second doped area being configured to absorb radiation, a gate region at the light entrance side at least between the first electrode and the second electrode, the gate region being connected to a gate electrode, a base electrode at the semiconductor body, the base electrode being configured to receive a current flow from the first electrode, the current flow being indicative of a radiant flux of the radiation onto the second doped area and a radiation shield covering and shielding the first doped area from the radiation to be detected.

Abstract: A driver circuit may include a first inductor with a first terminal coupled to a first voltage terminal and a first switch with a first and a second terminal. The first terminal of the first switch is coupled to a second terminal of the first inductor via a first node and the second terminal of the first switch is coupled to a second voltage terminal. Moreover, the driver circuit may include a diode with a first terminal coupled to the first node, an output terminal, and a first capacitor with a first electrode coupled to a second terminal of the diode and a second electrode coupled to the output terminal.

Abstract: In at least one embodiment, the optoelectronic semiconductor chip including a semiconductor layer sequence, in which there is at least one active zone for generating radiation; and a first electrode and a second electrode, with which the semiconductor layer sequence is in electrical contact; wherein the semiconductor layer sequence has, in the region of the active zone, at least one obliquely extending facet designed for a beam deflection of the radiation; wherein the first electrode and the second electrode are on the same mounting side of the semiconductor layer sequence as the at least one obliquely extending facet, and the mounting side is a main side of the semiconductor layer sequence; and wherein the radiation is coupled out on an emission side of the semiconductor layer sequence opposite from the mounting side.

Abstract: The invention relates to a method for producing an optoelectronic semiconductor chip, component, including the following steps: —providing an epitaxial semiconductor layer sequence with an active zone, which is configured to generate electromagnetic radiation during operation, —structuring the epitaxial semiconductor layer sequence so that at least one lateral surface is produced in the epitaxial semiconductor layer sequence, —introducing aluminum atoms at the lateral surface into the epitaxial semiconductor layer sequence, so that a band gap of the active zone at the lateral surface is increased. The invention also relates to an optoelectronic semiconductor chip.

Abstract: A surface-emitting semiconductor laser includes a first semiconductor layer of a first conductivity type, an active zone which is suitable for generating electromagnetic radiation, an ordered photonic structure, and a second semiconductor layer of a second conductivity type. The active zone is arranged between the first and second semiconductor layers. The ordered photonic structure is formed in the first semiconductor layer, and a part of the first semiconductor layer is adjacent to both sides of the ordered photonic structure. Alternatively, the ordered photonic structure is arranged in an additional semiconductor layer between the active zone and the second semiconductor layer. A part of the additional semiconductor layer is arranged between the ordered photonic structure and the second semiconductor layer.