Abstract: An image element is disclosed having first and second supply terminals, a light emitting semiconductor component, a driver circuit comprising a driver transistor, a storage capacitor, and a switching transistor, and a trigger circuit comprising an output transistor and a control capacitor. The light emitting semiconductor component and the driver transistor are arranged in series with each other and between the first supply terminal and the second supply terminal. A first electrode of the storage capacitor is coupled to a control terminal of the driver transistor. The switching transistor is configured to switch on and off a current flow through the light emitting semiconductor component. A first electrode of the control capacitor is connected to a control terminal of the output transistor. A first terminal of the output transistor is connected to a control terminal of the switching transistor. Furthermore, a method for operating an image element, in particular such an image element, is disclosed.

Abstract: An optical measuring system includes a multiplicity of apparatuses for emitting electromagnetic radiation, said apparatuses being configured to emit a signal simultaneously. The optical measuring system further includes a modulation device for altering a frequency of the respectively emitted electromagnetic radiation and a multiplicity of detectors which are suitable for detecting a superposition signal, which comprises the emitted electromagnetic radiation and electromagnetic radiation reflected at an object, and a measuring device, wherein the measuring device is suitable for being successively connected to each individual detector of the multiplicity of detectors.

Abstract: In one embodiment, the optoelectronic semiconductor component includes at least one optoelectronic semiconductor chip for generating radiation and a housing, in which the at least one optoelectronic semiconductor chip is hermetically encapsulated. The housing includes a housing cover which is secured to a housing main part by a connection means. The housing additionally includes a gas exchange channel which is hermetically sealed by a seal.

Abstract: The invention relates to a method for producing a radiation-emitting semiconductor body, including the following steps: providing a growth substrate having a main surface; producing a plurality of distributor structures on the main surface of the growth substrate; epitaxially depositing a compound semiconductor material on the main surface of the growth substrate, wherein the epitaxial growth of the compound semiconductor material varies along the main surface because of the distributor structures, such that the epitaxial deposition produces an epitaxial semiconductor layer sequence having at least a first emitter region and a second emitter region on the main surface, the first emitter region and the second emitter region being laterally adjacent to each other in a top view of a main surface of the semiconductor body, and the first emitter region and the second emitter region producing electromagnetic radiation of different wavelength ranges during operation.

Abstract: The invention relates to a laser device which includes at least one laser diode having an emission surface via which the laser diode can emit laser light during operation, and a screening element having an entry surface facing the emission surface.

Abstract: A semiconductor laser includes a horizontal laser element including a first semiconductor layer arrangement having a first active zone for generating radiation. The horizontal laser element furthermore includes a first optical resonator extending in a direction parallel to a first main surface of the first semiconductor layer arrangement. Lateral boundaries of the first semiconductor layer arrangement run obliquely, such that electromagnetic radiation generated is reflectable in a direction of the first main surface of the first semiconductor layer arrangement. The semiconductor laser furthermore includes a vertical laser element having a second optical resonator extending in a direction perpendicular to the first main surface of the first semiconductor layer arrangement.

Abstract: According to embodiments, a semiconductor laser comprises a semiconductor layer stack, which comprises an active zone for generating radiation. The semiconductor laser also comprises a first resonator mirror, a second resonator mirror, and an optical resonator, which is arranged between the first and second resonator mirrors and extends in a direction parallel to a main surface of the semiconductor layer stack. A reflectance R1 of the first resonator mirror is wavelength-dependent, so that R1 or a product R of R1 and the reflectance R2 of the second resonator mirror in a wavelength range decreases from a target wavelength ?0 of the laser to ?0+?? from a value R0, wherein ?? is selected as a function of a temperature-dependent shift in an emission wavelength.

Abstract: The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.

Abstract: The invention relates to a radiation-emitting semiconductor laser comprising—a semiconductor body comprising an active region which is designed to generate electromagnetic radiation, —a resonator which has a first end region and a second end region, and —a first sensor layer which is designed to measure the temperature of the semiconductor body, wherein the active region is located in the resonator in such a way that the electromagnetic radiation generated in the active region during operation is electromagnetic laser radiation, and —the first sensor layer is located in the first active end region of the resonator. The invention also relates to a method for operating a radiation-emitting semiconductor laser.

Abstract: The invention relates to a radiation-emitting semiconductor component comprising a semiconductor body which has an active zone for generating radiation and a radiation exit surface, a contact element which is arranged on the radiation exit surface at a first lateral distance from a first edge piece of the radiation exit surface and at a second lateral distance from a second edge piece of the radiation exit surface, and a decoupling structure for improving the decoupling of the radiation generated by the active zone, which decoupling structure is arranged on the radiation exit surface and has structural elements, wherein the structural elements vary in such a way that the radiation decoupling increases from the contact element to the first and/or second edge piece. Furthermore, a method is specified for producing a such a radiation-emitting semiconductor element.

Abstract: The invention relates to a method for producing a semi-conductor laser arrangement, in which a first laser diode chip is arranged on a first intermediate support. A second laser diode chip is arranged on a second intermediate support. The second laser diode chip with the second intermediate support is arranged on the first intermediate support, the second intermediate support being arranged on a side of the second laser diode chip facing away from the first intermediate support. The invention furthermore relates to a semi-conductor arrangement.

Abstract: An image element is disclosed having first and second supply terminals, a light emitting semiconductor component, a driver circuit comprising a driver transistor, a storage capacitor, and a switching transistor, and a trigger circuit comprising an output transistor and a control capacitor. The light emitting semiconductor component and the driver transistor are arranged in series with each other and between the first supply terminal and the second supply terminal. A first electrode of the storage capacitor is coupled to a control terminal of the driver transistor. The switching transistor is configured to switch on and off a current flow through the light emitting semiconductor component. A first electrode of the control capacitor is connected to a control terminal of the output transistor. A first terminal of the output transistor is connected to a control terminal of the switching transistor. Furthermore, a method for operating an image element, in particular such an image element, is disclosed.

Abstract: A method for the time-differentiated detection of a spectrum of a test object comprises providing a first conversion dye, which is configured to convert light with a first spectral distribution in the visible range into light with a second spectral distribution in the infrared range. The first conversion dye is excited with a light pulse in the range of the first spectral distribution during a first time period, and a light fraction, reflected or transmitted by the test object, in the range of the first spectral distribution is registered during a first time interval. During a subsequent second time period, a fraction of converted light reflected or transmitted by the test object is registered. According to the invention, the first time interval is selected so that it lies substantially inside a luminescence lifetime for the first conversion dye in the first time period.

Abstract: The invention relates to a semiconductor laser comprising a semiconductor layer arrangement, having an active zone for radiation generation, as well as comprising a first resonator mirror, a second resonator mirror and a resonator arranged between the first and the second resonator mirror, which ends in a direction parallel to a main surface of the semiconductor layer arrangement. The semiconductor laser also comprises a first wavelength-selective absorption element which is arranged between the semiconductor layer arrangement and the first resonator mirror.

Abstract: In one embodiment, the substrate is configured for a semiconductor laser diode and comprises a plurality of substrate layers. The substrate layers include insulating layers and carrier layers, which are thicker. A plurality of electrical contact surfaces, which are configured for the semiconductor laser diode, a laser capacitor and a control chip, are located on an assembling side of a first, uppermost substrate layer, which is an insulating layer. Electrical conductor tracks, which electrically interconnect the contact surfaces, are located on the one hand between the first insulating layer and a second insulating layer, and on the other hand between the second insulating layer and a third substrate layer, which is preferably an insulating layer.