Abstract: In one embodiment an optoelectronic system can include a photonics interposer having a substrate and a functional interposer structure formed on the substrate, a plurality of through vias carrying electrical signals extending through the substrate and the functional interposer structure, and a plurality of wires carrying signals to different areas of the functional interposer structure. The system can further include one or more photonics device integrally formed in the functional interposer structure, and one or more prefabricated component attached to the functional interposer structure.

Abstract: Aspects of the present disclosure describe systems, methods, and structures for aberration correction of optical phased arrays that employ a corrective optical path difference (OPD) in the near-field of an OPA to correct or cancel out aberrations in emitted beams of the OPA including those reaching far-field distances by generating a spatially-varying OPD across the aperture of the OPA that is substantially equal and opposite to an equivalent OPD of the aberration(s).

Abstract: An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

Abstract: An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

Abstract: An optical switching apparatus comprises: input ports receiving respective input optical waves, each coupled to a respective beam-forming structure comprising: an input optical waveguide, an optical power distributor to distribute optical power from a mode of the optical waveguide over the respective spatial region, and a spatially distributed phase shifter to apply different transmission optical phase shifts over different portions of the respective spatial region, where the transmission optical phase shifts determine the selected transmission angle; and output ports providing respective output optical waves, each coupled to a respective beam-receiving structure comprising: a spatially distributed phase shifter to apply different reception optical phase shifts over different portions of the respective spatial region, where the reception optical phase shifts determine the selected reception angle, an optical power combiner to combine optical power from different portions of the respective spatial region into

Abstract: An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

Abstract: Aspects of the present disclosure describe systems, methods, and structures for optical phased array calibration that advantageously may be performed as a single-pass measurement of phase offset with respect to only a single interference measurement. In sharp contrast to the prior art—systems, methods, and structures according to aspects of the present disclosure advantageously produce phase offsets and phase functions of each element without time-consuming iterative procedures or multiple detector signals as required by the prior art.

Abstract: A plurality of waveguide structures are formed in at least one silicon layer of a first member. The first member includes: a first surface of a first silicon dioxide layer that is attached to a second member that consists essentially of an optically transmissive material having a thermal conductivity less than about 50 W/(m·K), and a second surface of material that was deposited over at least some of the plurality of waveguide structures. An array of phase shifters is formed in one or more layers of the first member. An array of temperature controlling elements are in proximity to the array of phase shifters.

Abstract: Aspects of the present disclosure describe large scale steerable optical switched arrays that may be fabricated on a common substrate including many thousands or more emitters that may be arranged in a curved pattern at the focal plane of a lens thereby allowing the directional control of emitted light and selective reception of reflected light suitable for use in imaging, ranging, and sensing applications including accident avoidance.

Abstract: Aspects of the present disclosure describe systems, methods, and structures providing speckle reduction in photonic phased array structures.

Abstract: Aspects of the present disclosure describe systems, methods, and structures including integrated laser systems that employ external chirping structures that may advantageously include phase shifters and/or one or more filters. Further aspects of the present disclosure describe systems, methods, and structures including laser systems that employ external chirping structures that may advantageously include optical phased arrays.

Abstract: Aspects of the present disclosure describe optical structures and devices, and more particularly to improved, tunable optical structures including optical gratings that are dynamically affected and/or tuned by acousto-optic or electro-optic mechanisms.

Abstract: An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

Abstract: Aspects of the present disclosure describe configurations of, and methods for operating a large-scale optical phased array for contemporary applications including LIDAR, optical communications, imaging, and displays—among others.

Abstract: Aspects of the present disclosure describe photonic integrated circuits on a common substrate including an optical phased array having a plurality of emitters and a plurality of thermal phase shifters in which the thermal phase shifters are thermally isolated from one another through the effect of one or more trenches formed over and/or under and/or around the thermal phase shifters and/or waveguides including same.

Abstract: Aspects of the present disclosure describe systems, methods, and structures for optical phased array calibration that advantageously may be performed as a single-pass measurement of phase offset with respect to only a single interference measurement. In sharp contrast to the prior art—systems, methods, and structures according to aspects of the present disclosure advantageously produce phase offsets and phase functions of each element without time-consuming iterative procedures or multiple detector signals as required by the prior art.

Abstract: Aspects of the present disclosure describe systems, methods, and structures for aberration correction of optical phased arrays that employ a corrective optical path difference (OPD) in the near-field of an OPA to correct or cancel out aberrations in emitted beams of the OPA including those reaching far-field distances by generating a spatially-varying OPD across the aperture of the OPA that is substantially equal and opposite to an equivalent OPD of the aberration(s).

Abstract: An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

Abstract: An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

Abstract: An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.