Patents Assigned to Anelva Corporation
  • Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device
    Patent number: 9379279
    Abstract: The present invention has an object to provide an epitaxial film forming method of epitaxially growing a high-quality group III nitride semiconductor thin film on an ?-Al2O3 substrate by a sputtering method. An epitaxial film forming method according to an embodiment of the present invention includes forming an epitaxial film of a group III nitride semiconductor thin film on an ?-Al2O3 substrate placed on a substrate holder (111) including a heater electrode (104) and a bias electrode (103) in a sputtering apparatus (1) by applying high-frequency power to a target electrode (102) and applying high-frequency bias power to the bias electrode (103) while the heater electrode (104) maintains the ?-Al2O3 substrate at a predetermined temperature. In this process, the high-frequency power and the high-frequency bias power are applied so that frequency interference therebetween may not occur.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: June 28, 2016
    Assignee: CANON ANELVA CORPORATION
    Inventor: Yoshiaki Daigo
  • Mass spectrometer
    Patent number: 9373491
    Abstract: An object of the present invention is to provide a mass spectrometer having a simple structure and being capable of precisely measuring a total pressure and performing mass spectrometry with high precision. A mass spectrometer according to one embodiment includes a quadrupole configured to selectively pass therethrough an ion of a target gas having a predetermined mass-to-charge ratio among components of a measurement gas ionized by an ion source, an ion detector configured to detect an ion current value based on the ion of the target gas that passes through the quadrupole, a total pressure measurer configured to detect a photoelectric current value based on vacuum ultraviolet light generated when the ion source ionizes the measurement gas, and an arithmetic unit configured to calculate a partial pressure of the target gas by using the photoelectric current value and the ion current value.
    Type: Grant
    Filed: May 27, 2015
    Date of Patent: June 21, 2016
    Assignee: CANON ANELVA CORPORATION
    Inventors: Megumi Nakamura, Masayuki Sugiyama, Lei Chen, Yoshiyuki Takizawa
  • Sputtering apparatus
    Patent number: 9368331
    Abstract: The present invention provides a highly efficient magnetron sputtering apparatus in which a ground shield made of a magnetic material is disposed on the outer circumference of a target, the sputtering apparatus being capable of reducing unintended discharge between a cathode and the ground shield. The sputtering apparatus according to an embodiment includes: a backing plate connected to a power supply and having a target mounting surface; a magnet disposed on the back surface of the backing plate; a grounded shield containing a magnetic material and surrounding the target mounting surface; and a fixation part located between the shield and the backing plate at an outer circumference of the target mounting surface and serving as a magnetic member. This structure reduces magnetic field lines which pass through a space between the shield and the fixation part.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: June 14, 2016
    Assignee: Canon Anelva Corporation
    Inventors: Masato Shinada, Keisuke Ueda
  • Substrate transport apparatus, and system and method for manufacturing electronic device
    Patent number: 9346171
    Abstract: A substrate transport apparatus including a first substrate holder and a second substrate holder capable of respectively holding substrates includes a first drive arm which has first and second end portions, and is rotatable with rotation of a first drive shaft, a second drive arm which has a third end portion spaced apart from the first end portion by a first distance, and a fourth end portion spaced apart from the second end portion by a second distance, and is rotatable with rotation of a second drive shaft coaxial with the first drive shaft, two first driven arms coupled to the first substrate holder, and two second driven arms coupled to the second substrate holder.
    Type: Grant
    Filed: January 29, 2013
    Date of Patent: May 24, 2016
    Assignee: CANON ANELVA CORPORATION
    Inventors: Kazuhito Watanabe, Yukihito Tashiro, Satoshi Nakamura, Daisuke Kobinata, Toshiaki Sasaki, Naoyuki Nozawa
  • DEPOSITION APPARATUS
    Publication number: 20160130700
    Abstract: A deposition apparatus comprises a source unit configured to generate a plasma by arc discharge, a deposition unit in which a deposition target material is arranged so as to be irradiated with the plasma generated in the source unit, and an induction unit configured to induce the plasma for the source unit to the deposition unit. The induction unit comprises a partition unit airtightly connected to each of the source unit and the deposition unit and configured to pass the plasma inside, and a plurality of magnet units configured to form a magnetic field to induce the plasma in the partition unit. The plurality of magnet units are connected to adjust a connection angle, and the partition unit includes a tubular member bendable according to the connection angle of the plurality of magnet units.
    Type: Application
    Filed: November 4, 2015
    Publication date: May 12, 2016
    Applicant: CANON ANELVA CORPORATION
    Inventors: Hidekazu NISHIMURA, Naoyuki NOZAWA
  • Sputtering apparatus and method of manufacturing electronic device
    Patent number: 9322092
    Abstract: It is an object of this invention to prevent a deposited film from adhering to an exhaust chamber so as to suppress the generation of particles. A sputtering apparatus (1) includes a shutter accommodation unit (23) which is detachably placed in an exhaust chamber (8) and accommodates a shutter (19) in a retracted state, and shield members (40a, 40b) which at least partially cover the exhaust port of the exhaust chamber (8), and are at least partially formed around an opening portion of the shutter accommodation unit (23).
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: April 26, 2016
    Assignee: CANON ANELVA CORPORATION
    Inventors: Nobuo Yamaguchi, Kimiko Mashimo, Shinya Nagasawa
  • Film-forming apparatus
    Patent number: 9322095
    Abstract: A film-forming apparatus includes a plurality of target electrodes, a substrate holder for holding a substrate, a first shutter member rotatably provided between the plurality of target electrodes and the substrate holder and having a plurality of openings, first separating walls provided on a surface of the first shutter member, the surface being on the target electrode side; and second separating walls provided between the first shutter member and the target electrodes, wherein the first separating walls are provided so as to sandwich each of the plurality of openings of the first shutter member.
    Type: Grant
    Filed: October 15, 2013
    Date of Patent: April 26, 2016
    Assignee: CANON ANELVA CORPORATION
    Inventors: Yuji Kajihara, Yasushi Yasumatsu, Kazuya Konaga
  • Film-forming apparatus
    Patent number: 9322094
    Abstract: The present invention provides a film forming apparatus configured such that the occurrence of contamination is reduced between targets. The film forming apparatus includes: a plurality of target electrodes respectively having attachment surfaces to which targets can be attached; a substrate holder for holding a substrate at a position opposing the plurality of target electrodes; a first shutter member rotatably provided between the plurality of target electrodes and the substrate holder and having a plurality of openings that can oppose the attachment surfaces; and a shield member disposed adjacent to the first shutter member and having a number of openings equal to the number of the target electrodes, wherein a gap between the first shutter member and the shield member widens toward an outer perimeter from a portion where adjacent target electrodes are closest.
    Type: Grant
    Filed: November 1, 2013
    Date of Patent: April 26, 2016
    Assignee: CANON ANELVA CORPORATION
    Inventors: Yuji Kajihara, Yasushi Yasumatsu, Kazuya Konaga
  • Cold cathode ionization vacuum gauge and inner wall protection member
    Patent number: 9316555
    Abstract: A cold cathode ionization vacuum gauge, including: two electrodes disposed such that one of the electrodes is surrounded by the other electrode to thereby form a discharge space therebetween; and an electrode protection member disposed in the discharge space and configured to protect an inner wall surface of the other electrode, wherein the electrode protection member has electric conductivity and is elastically deformed along a shape of the inner wall surface to be electrically connected to the other electrode.
    Type: Grant
    Filed: April 24, 2014
    Date of Patent: April 19, 2016
    Assignee: Canon Anelva Corporation
    Inventors: Itaru Enomoto, Hideo Mano
  • Film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device
    Patent number: 9309606
    Abstract: In one embodiment of the present invention, a film forming method of epitaxially growing a semiconductor film having a wurtzite structure by sputtering on a substrate for epitaxial growth heated to a desired temperature by using a heater, comprises the following steps. First, the substrate is disposed on a substrate holder including the heater in such a way that the substrate is disposed away from the heater by a predetermined distance. Then, the epitaxial film of the semiconductor film having the wurtzite structure is formed on the substrate in the state where the substrate is disposed away from the heater by the predetermined distance.
    Type: Grant
    Filed: April 15, 2014
    Date of Patent: April 12, 2016
    Assignee: Canon Anelva Corporation
    Inventor: Yoshiaki Daigo
  • Apparatus and method for processing substrate using ion beam
    Patent number: 9312102
    Abstract: A method of processing a substrate in an apparatus including a substrate holder which holds the substrate, an ion source which emits an ion beam, a neutralizer which emits electrons, and a shutter which is arranged between a space in which the ion source and the neutralizer are arranged and a space in which the substrate holder is arranged, and configured to shield the ion beam traveling toward the substrate, includes adjusting an amount of electrons which are emitted by the neutralizer and reach the substrate holder during movement of the shutter.
    Type: Grant
    Filed: December 9, 2011
    Date of Patent: April 12, 2016
    Assignee: CANON ANELVA CORPORATION
    Inventors: Yasushi Kamiya, Einstein Noel Abarra, Yuta Konno
  • Sputtering apparatus
    Patent number: 9299544
    Abstract: A sputtering apparatus includes a target electrode capable of mounting a target, a first support member which supports the target electrode, a magnet unit which forms a magnetic field on a surface of the target, a second support member which supports the magnet unit, and a force generation portion which is provided between the first support member and the second support member, and generates a second force in a direction opposite to a first force that acts on the second support member by an action of the magnetic field formed between the target and the magnet unit, wherein the second force has a magnitude which increases as the magnet unit comes closer to the target electrode.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: March 29, 2016
    Assignee: CANON ANELVA CORPORATION
    Inventor: Tetsuya Endo
  • DEPOSITION APPARATUS
    Publication number: 20160060750
    Abstract: A deposition apparatus comprises a target unit, an anode unit into which electrons emitted from the target unit flow, a striker configured to come into contact with the target unit to render the target unit and the anode unit conductive, so as to cause arc discharge between the target unit and the anode unit, a striker driving unit configured to drive the striker in one of a direction toward the target unit and a direction to retract from the target unit, a power supply unit configured to supply power to the target unit and the anode unit, and a control unit configured to control the striker driving unit and the power supply unit. The control unit supplies the power to the target unit and the anode unit after bringing the striker into contact with the target unit.
    Type: Application
    Filed: November 11, 2015
    Publication date: March 3, 2016
    Applicant: CANON ANELVA CORPORATION
    Inventors: Teruaki ONO, Masahiro SHIBAMOTO
  • VACUUM PROCESSING DEVICE
    Publication number: 20160057812
    Abstract: A vacuum processing apparatus according to this invention includes a heating unit arranged to face a processing surface of a substrate supported by a substrate support unit in a vacuum chamber, a cooling unit arranged to face a reverse surface of the substrate supported by the substrate support unit, a temperature correction unit configured to correct a temperature of a periphery of the substrate in order to reduce a temperature difference between a central portion and the periphery of the substrate by being arranged in a predetermined position between the substrate and the cooling unit when the heating unit heats the substrate, and a correction unit moving device configured to retract the temperature correction unit from the predetermined position.
    Type: Application
    Filed: November 3, 2015
    Publication date: February 25, 2016
    Applicant: CANON ANELVA CORPORATION
    Inventors: Hidehiro YASUKAWA, Masahiro SUGIHARA
  • PROCESSING APPARATUS
    Publication number: 20160056026
    Abstract: The present invention provides a processing apparatus including a vacuum vessel, a plurality of electrodes arranged in the vacuum vessel, a plurality of power supplies configured to apply potentials to the plurality of electrodes, a detector configured to detect a potential in a process space between a substrate transferred into the vacuum vessel and each of the plurality of electrodes, and a controller configured to control phases of the potentials to be applied to the plurality of electrodes by the plurality of power supplies based on the potential detected by the detector.
    Type: Application
    Filed: November 4, 2015
    Publication date: February 25, 2016
    Applicant: CANON ANELVA CORPORATION
    Inventors: Hidetomo NARADATE, Masahiro SHIBAMOTO
  • SPUTTERING APPARATUS
    Publication number: 20160042928
    Abstract: A sputtering apparatus includes a vacuum chamber, a substrate holder, a target support member, a cathode magnet arranged on a side of the target support member, which is opposite to a side of a substrate held by the substrate holder, a magnet moving unit configured to adjust a distance between the cathode magnet and the target support member, a target moving unit configured to adjust a distance between the target support member and the substrate, and a control unit configured to control the target moving unit and the magnet moving unit.
    Type: Application
    Filed: October 23, 2015
    Publication date: February 11, 2016
    Applicant: CANON ANELVA CORPORATION
    Inventors: Satoshi YAMADA, Ryuji HIGASHISAKA
  • Epitaxial film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device
    Patent number: 9252322
    Abstract: The present invention provides: an epitaxial film forming method capable of fabricating a +c-polarity epitaxial film made of a Group III nitride semiconductor by sputtering; and a vacuum processing apparatus suitable for this epitaxial film forming method. In one embodiment of the present invention, a Group III nitride semiconductor thin film is epitaxially grown by sputtering on an ?-Al2O3 substrate heated to a desired temperature by using a heater. First, the ?-Al2O3 substrate is disposed on a substrate holder including the heater in such a way that the ?-Al2O3 substrate is disposed away from the heater by a predetermined distance. Then, an epitaxial film of a Group III nitride semiconductor thin film is formed on the ?-Al2O3 substrate in the state where the ?-Al2O3 substrate is disposed away from the heater by the predetermined distance.
    Type: Grant
    Filed: October 26, 2012
    Date of Patent: February 2, 2016
    Assignee: Canon Anelva Corporation
    Inventors: Yoshiaki Daigo, Keiji Ishibashi
  • SPUTTERING APPARATUS
    Publication number: 20160027624
    Abstract: A sputtering apparatus that forms a film on a substrate by sputtering in a chamber includes an electrode including a holding portion that holds a target, and configured to apply a potential to the target via the holding portion, a first magnet and second magnet arranged to sandwich a space between the holding portion, and a substrate arrangement surface on which the substrate should be arranged, and to be spaced apart from each other in a direction along the substrate arrangement surface, a shield arranged between the first magnet and the second magnet, and between the substrate arrangement surface and the holding portion, and a rotation driving unit configured to integrally rotate the target, the first magnet, and the second magnet.
    Type: Application
    Filed: July 7, 2015
    Publication date: January 28, 2016
    Applicant: CANON ANELVA CORPORATION
    Inventors: Susumu KARINO, Masahiro SHIBAMOTO
  • SPUTTERING APPARATUS
    Publication number: 20160027623
    Abstract: A sputtering apparatus includes a shutter arranged having a first surface on a side of a substrate holder and a second surface on the opposite side, a first shield having a third surface including a portion facing the second surface and a fourth surface on the opposite side, a second shield having a fifth surface including a portion facing end portions of the shutter and the first shield, and a gas supply unit supplying a gas into a space arranged outside the first shield to communicate with a first gap between the second surface of the shutter and the third surface of the first shield. The second shield includes a protruding portion on the fifth surface to form a second gap between the protruding portion and the end portion of the shutter.
    Type: Application
    Filed: October 8, 2015
    Publication date: January 28, 2016
    Applicant: CANON ANELVA CORPORATION
    Inventor: Shigenori ISHIHARA
  • Substrate processing apparatus
    Patent number: 9245785
    Abstract: The present invention provides an in-line type multi-chamber substrate processing apparatus which, with a simple configuration, can decrease influence of particles due to film peeling and enables installation of a number of processing chambers. In one embodiment of the present invention, a jointless arm of a transfer robot that has a substrate holding part 4a and performs rotational movement while maintaining a predetermined length of the arm is disposed inside a first process chamber capable of being evacuated. The first process chamber is configured to be able to transfer substrates from an adjacent second process chamber through an opening by the arm of the transfer robot. A holder as an arm retreating position and a substrate mounting position is positioned so as to overlap with a trajectory of the substrate holding part when the arm of the transfer robot rotates about a rotation axis.
    Type: Grant
    Filed: January 6, 2012
    Date of Patent: January 26, 2016
    Assignee: Canon Anelva Corporation
    Inventors: Yukihito Tashiro, Toshikazu Nakazawa