Abstract: A substrate support apparatus which can support a substrate having a center hole, comprises a support portion which can support the substrate. The support portion includes a support groove with a cross-sectional shape in which a groove width gradually increases in a counter-gravitational direction, and a width of the support groove between two end portions is larger than a width of the support groove at the center thereof.

Abstract: A cold cathode ionization vacuum gauge, including: two electrodes disposed such that one of the electrodes is surrounded by the other electrode to thereby form a discharge space therebetween; and an electrode protection member disposed in the discharge space and configured to protect an inner wall surface of the other electrode, wherein the electrode protection member has electric conductivity and is elastically deformed along a shape of the inner wall surface to be electrically connected to the other electrode.

Abstract: A vacuum actuator includes a vacuum partition wall, the interior of which can be evacuated to a vacuum, a rotor supported by the vacuum partition wall to be free to rotate, a permanent magnet provided on the outer peripheral surface of the rotor, a coil opposed to the permanent magnet, and a stator provided with the coil. The stator and the vacuum partition wall are formed integrally with each other.

Abstract: A sputtering apparatus includes a substrate holder which holds a substrate to be rotatable in the plane direction of the processing surface of the substrate, a substrate-side magnet which is arranged around the substrate and forms a magnetic field on the processing surface of the substrate, a cathode which is arranged diagonally above the substrate and receives discharge power, a position detection unit which detects the rotational position of the substrate, and a controller which controls the discharge power in accordance with the rotational position detected by the position detection unit.

Abstract: A sputtering apparatus including a target holder configured to hold at least two targets; a substrate holder configured to hold a substrate; a first shutter plate arranged between the target holder and the substrate holder, the first shutter plate having at least two holes and being capable of rotating around an axis; a second shutter plate arranged between the first shutter plate and the substrate holder, the second shutter plate having at least two holes and being capable of rotating around the axis; wherein the first and second shutter plates are rotated such that paths are simultaneously created between the at least two targets and the substrate through the at least two holes of the rotated first shutter plate and the at least two holes of the rotated second shutter plate, and a film is formed on the substrate by co-sputtering of the at least two targets.

Abstract: An inline vacuum processing apparatus includes a deposition unit, a process execution unit, a determination unit, and a control unit. The deposition unit causes one deposition chamber of a first deposition chamber and a second deposition chamber to execute a deposition process. The process execution unit causes the other deposition chamber to execute a process necessary for the deposition process. The determination unit measures the number of substrates processed in one deposition chamber and determines whether all substrates included in a first lot have undergone the deposition process. The control unit switches, based on a determination result from the determination unit, a process to be executed in each of the first deposition chamber and the second deposition chamber.

Abstract: An information processing apparatus for processing a plurality of event data generated by a processing apparatus for processing a member, includes a determination unit which determines at least two event data existing at a preset interval in a time-series sequence of the plurality of event data, a specification unit which acquires a scroll request containing designation information for designating a position in the sequence from a scroll function incorporated in the information processing apparatus, and specify, as jump destination event data, event data at a position close to the position designated by the designation information in the sequence, among the at least two event data determined by the determination unit, and a control unit which causes the scroll function to start scrolling from or near the jump destination event data.

Abstract: An etching apparatus includes a chamber capable of being evacuated, a first electrode provided in the chamber and including a tray support portion configured to support a tray which can hold a plurality of substrates and load/unload the substrates into/from the chamber, and a voltage applying unit configured to apply a voltage to the first electrode. A dielectric plate is attached to a portion, of an obverse surface of the first electrode, which faces an outer edge portion of a non-target surface of the substrate.

Abstract: A sputtering apparatus includes a substrate holder, a magnetic field applying unit, and target mounting table. The substrate holder includes a first stage which can mount a substrate and can rotate about a first rotating shaft, a second stage which can rotate about a second rotating shaft shifted from the first rotating shaft, a spinning unit which rotates the first stage about the first rotating shaft, and a revolving unit which revolves the first stage about the second rotating shaft. The magnetic field applying unit applies a magnetic field in a specific direction to the substrate. The target mounting table can mount a target configured to deposit a film on the substrate. The spinning unit rotates the first stage in a direction opposite to that of the rotation of the revolving unit, and rotates the first stage so as to maintain the specific direction of the magnetic field.

Abstract: An apparatus includes a C-shaped susceptor including a first substrate placement portion capable of placing the substrate, and an opening portion, a substrate stage including a second substrate placement portion capable of placing the substrate, and a susceptor support portion configured to support the susceptor, and a complementary portion formed separately from the susceptor support portion, engaged with the susceptor support portion, and configured to complement an opening portion of the susceptor to form the susceptor into an annular shape in a state in which the susceptor support portion supports the susceptor. When the substrate is placed on the second substrate placement portion and the second substrate placement portion is located at a predetermined distant position with respect to the heat radiation surface, the susceptor forms the annular shape together with the complementary portion to surround the substrate.

Abstract: In a vacuum processing apparatus, a substrate chuck mechanism member is attached to a substrate holder provided in a vacuum processing chamber, includes a shaft member, first and second coil springs that are provided at the two ends, respectively, of the shaft member, and a substrate chuck plate provided at the end of the shaft member, and is additionally attached to the substrate holder using the substrate chuck plate by elastic biasing of the first coil spring. The holding state of the substrate on the substrate holder is changed by the expansion/contraction actions of the first and second coil springs in accordance with the reciprocal movement of the substrate holder.

Abstract: This invention provides a cold trap using a Stirling refrigerator. A refrigerator includes a drive piston configured to drive a free piston so as to reciprocally move a working medium between a heat dissipation portion and a heat absorption portion, a vibration sensor configured to measure a vibration of a case, a dynamic vibration absorber configured to reduce the vibration of the case when the drive piston is driven, and a frequency adjustment device configured to adjust a driving frequency to reduce the vibration of the case when the drive piston is driven in a state in which the case is connected to a vacuum device.

Abstract: A processing apparatus includes a substrate holding portion, a shield arranged to surround a substrate, and a shield holding portion configured to hold the shield. The shield includes first magnets each having a magnetic pole of a first polarity facing the shield holding portion, and second magnets each having a magnetic pole of a second polarity facing the shield holding portion. The first magnets and the second magnets are arranged at positions symmetrical with respect to the center of the shield. The shield holding portion includes third magnets each having a magnetic pole of the first polarity facing the shield, and fourth magnets each having a magnetic pole of the second polarity facing the shield.

Abstract: A sputtering apparatus includes a backing plate, a fixing portion, and a shield surrounding the periphery of a target and having an opening. The fixing portion fixes the target to the backing plate by pressing the peripheral portion of the target against the backing plate. The shield includes a facing portion facing the backing plate without the fixing portion intervening between them, and an outer portion formed outside the facing portion. The gap between the facing portion and the backing plate is smaller than the gap between the outer portion and the backing plate. The inner surface of the shield, which faces a processing space, includes a portion which inclines such that the distance between the inner surface and the backing plate decreases from the outer portion to the facing portion.

Abstract: Embodiments include methods of forming dielectric layers. According to an exemplary embodiment, a dielectric layer may be formed by determining a desired thickness of the dielectric layer, forming a first dielectric sub-layer having a thickness less than the desired thickness by depositing a first metal layer above a substrate and oxidizing the first metal layer, and forming n (where n is greater than 1) additional dielectric sub-layers having a thickness less than the desired thickness above the first dielectric sub-layer by the same method of the first dielectric sub-layer so that a combined thickness of all dielectric sub-layers is approximately equal to the desired thickness.

Abstract: A processing apparatus for processing a substrate in a vacuum processing space in a chamber includes a shield arranged in the chamber, and a holding portion configured to hold the shield by a magnetic force. The holding portion has a holding surface on which a first magnet is arranged. The shield includes a second magnet configured to generate an attraction force with respect to the first magnet, and a receiving portion configured to receive a tool configured to move the shield with respect to the holding portion.

Abstract: A substrate holder apparatus includes a substrate holder configured to hold a substrate in a vacuum processing space in a chamber, a support column coupled to the substrate holder, a first rotating support unit which rotatably supports the support column, a second rotating support unit which rotatably supports the support column at a position spaced apart from a position where the first rotating support unit supports the support column, a housing configured to support the first rotating support unit and the rotating support unit, and a conductive member configured to electrically connect the support column to the housing.

Abstract: A substrate holder apparatus includes a substrate holder configured to hold a substrate in a vacuum processing space in a chamber, a support column coupled to the substrate holder, a first rotating support unit which rotatably supports the support column, a second rotating support unit which rotatably supports the support column at a position spaced apart from a position where the first rotating support unit supports the support column, and a housing configured to support the first rotating support unit and the second rotating support unit. The second rotating support unit and the housing or the support column and the housing are electrically insulated from each other.

Abstract: The present invention provides a vacuum processing apparatus capable of reducing attachment of particles generated in a processing space to an inner wall of a chamber, and of easily adjusting pressure in the processing space while introducing a gas into the processing space at a desired flow rate. A vacuum processing apparatus according to one embodiment includes: a container; a gas exhaust portion; a substrate holder configured to retain a substrate; a shield provided to surround the substrate holder and dividing an inside of the container into a processing space and an outside space; a gas introducing portion; a plasma generating portion; and an exhaust portion provided to the shield having a communication path through which the processing space and the outside space communicate, wherein at least part of the communication path is hidden from a region where the plasma generating portion generates the plasma.

Abstract: An oscillator element according to one embodiment of the present invention includes a magnetoresistive element having a magnetization free layer, magnetization fixed layer, and a tunnel barrier layer. Provided on the magnetization free layer are a protection layer and an electrode having a point contact section where the electrode is partially in electrical contact with the protection layers. An interlayer insulating film is provided between the electrode and the protection layer. The area of the interface between the magnetization free layer and the tunnel barrier layer is larger than the surface area of the point contact section. Moreover, a portion of the protection layer in contact with the interlayer insulating film has a smaller thickness in a surface normal direction than the portion of the protection layer in contact with the electrode.