Abstract: A method for processing a substrate is described. The method includes forming a metal containing resist layer onto a substrate, patterning the metal containing resist layer, and performing a post exposure bake on the metal containing resist layer. The post exposure bake on the metal containing resist layer is a field guided post exposure bake operation and includes the use of an electric field to guide the ions or charged species within the metal containing resist layer. The field guided post exposure bake operation may be paired with a post development field guided bake operation.

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems, and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having three MOSFETs and three series-connected capacitors. The capacitors are connected across a DC power supply and, depending on the value of the capacitors, voltage across each of them may be varied. Each of the top two capacitors is followed by a diode. The bottom capacitor is connected to the ground. The drain terminal of each MOSFET is connected to higher potential end of the series connected capacitors. Each MOSFET is followed by a diode and the cathode ends of the diodes are connected together. An electrode is connected between the common cathode and ground.

Abstract: A material deposition apparatus for depositing an evaporated material onto a substrate is provided. The material deposition apparatus includes a processing drum having a cooler configured to control a substrate temperature during processing of a substrate on the processing drum; a roller guiding the substrate towards the processing drum; a first heater assembly positioned to heat the substrate in a free-span area between the roller and the processing drum; a second heater assembly positioned to heat the substrate while being supported on the processing drum; at least one deposition source provided along a substrate transport path downstream of the second heater assembly; a substrate speed sensor providing a speed signal correlating with a substrate transportation speed; and a controller having an input for the speed signal configured to control at least the first heater assembly.

Abstract: Methods and systems for rating a current substrate support assembly based on impedance circuit electron flow are provided. Data associated with an amount of radio frequency (RF) power flowed through an electrical component of a current substrate support assembly during a current testing process performed for the current substrate support assembly is provided as input to a trained machine learning model. One or more outputs of the trained machine learning model are obtained. A measurement value for an electron flow across an impedance circuit of the current substrate support assembly is extracted from the one or more outputs. In response to a determination that the extracted measurement value for the electron flow satisfies an electron flow criterion, a first quality rating is assigned to the current substrate support assembly.

Abstract: Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

Abstract: Exemplary processing systems may include a chamber body. The systems may include a pedestal configured to support a semiconductor substrate. The systems may include a faceplate. The chamber body, the pedestal, and the faceplate may define a processing region. The faceplate may be coupled with an RF power source. The systems may include a remote plasma unit. The remote plasma unit may be coupled at electrical ground. The systems may include a discharge tube extending from the remote plasma unit towards the faceplate. The discharge tube may define a central aperture. The discharge tube may be electrically coupled with each of the faceplate and the remote plasma unit. The discharge tube may include ferrite extending about the central aperture of the discharge tube.

Abstract: Disclosed herein is a substrate support assembly having a ground electrode mesh disposed therein along a side surface of the substrate support assembly. The substrate support assembly has a body. The body has an outer top surface, an outer side surface and an outer bottom surface enclosing an interior of the body. The body has a ground electrode mesh disposed in the interior of the body and adjacent the outer side surface, wherein the ground electrode does not extend through to the outer top surface or the outer side surface.

Abstract: Embodiments of the disclosure provide methods of forming interconnect structures in the manufacture of microelectronic devices. In one or more embodiments, microelectronic devices described herein comprise at least one top interconnect structure that is interconnected to at least one bottom interconnect structure. Embodiments of the disclosure relate to methods of improving barrier layer and metal liner properties in the interconnect structures without increasing capacitance and/or damaging other layers. In some embodiments, the barrier layer is treated with microwave radiation. The treatment process can be implemented in a processing tool including a modular high-frequency emission source.

Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing an oxygen-containing precursor to the processing region, forming plasma effluents of the oxygen-containing precursor, and contacting the silicon-containing material with the plasma effluents of the oxygen-containing precursor to form a silicon-and-oxygen-containing material.

Abstract: Methods of manufacturing memory devices are provided. The method comprises forming a first epitaxial layer on a substrate; and forming a memory array on the first epitaxial layer, the memory array comprising a memory stack of alternating layers of an oxide material and a metal material on the first epitaxial layer, at least one memory cell extending from the first epitaxial layer through the memory stack, and a slit filled with a fill material adjacent to the at least one memory cell.

Abstract: Exemplary substrate processing chambers may include a chamber body defining a processing region. The chambers may include a backing plate disposed atop the chamber body, a diffuser above the processing region and supported by the backing plate, and a cooling frame disposed between the backing plate and the diffuser. The cooling frame may be coupled with the diffuser. The cooling frame may include a body having one or more fluid inlets and one or more fluid outlets. The body may define an opening. The fluid inlets may be in fluid communication with the one or more fluid outlets via one or more fluid lumens that each extend at least partially about a periphery of the opening. The fluid inlets may be in fluid communication with one or more fluid supply lumens. The fluid outlets may be in fluid communication with one or more fluid return lumens.

Abstract: Exemplary methods of OLED device processing are described. The methods may include forming an anode on a substrate. Forming the anode may include forming a first metal oxide material on the substrate, forming a metal layer over the first metal oxide material, forming a protective barrier over the metal layer, and forming a second metal oxide material over the amorphous protection material. The protective barrier may be an amorphous protection material overlying the metal layer.

Abstract: Exemplary semiconductor processing methods may include flowing a fluorine-containing precursor and a hydrogen-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include forming plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor and contacting the substrate with the plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor to form a fluorinated portion of the stacked layers. The methods may include flowing an inert precursor into the processing region, forming plasma effluents of the inert precursor, and contacting the substrate with the plasma effluents of the inert precursor to remove the fluorinated portion of the stacked layers.

Abstract: A plasma processing apparatus. The plasma processing apparatus may include a plasma chamber, to define a plasma therein, and an extraction aperture, arranged along a first side of the plasma chamber, the extraction aperture to define an ion beam extracted therethrough. The plasma processing apparatus may further include a residence time tuning assembly, coupled to a portion of the plasma chamber, different from the first side, wherein the residence time tuning assembly comprises a pumping duct, connected to the plasma chamber on a first end, and defining a pumping path for extracting a gaseous species directly from the plasma chamber, separately from the extraction aperture.

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

Abstract: Liquid dispersions of quantum dot particles include an acrylic medium having a boiling point in a range of from greater than or equal to 100° C. to less than or equal to 500° C., quantum dot particles dispersed in the acrylic medium, a photo-initiator, and a surface additive. The liquid dispersions of quantum dot particles are useful as stable liquid formulations that resist gelling for spin-coating and ink-jet printing of color conversion layers in the manufacture of LED and micro-LED panels for advanced displays. Methods of manufacturing light-emitting devices using the liquid dispersions of quantum dot particles are also disclosed.

Abstract: Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts through the selective deposition of a fill material.

Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.

Abstract: An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the mea

Abstract: A method and apparatus for lifting a process station from a processing module is described herein. The apparatus includes a lift assembly disposed on the processing module, a lift cage, and one or more guide pins. The lift assembly is disposed to be capable of reaching each of the process stations disposed within the processing module. The lift assembly is used for replacement and maintenance of the process stations and further enables the automated removal and placement of the process stations within the processing module. Maintenance methods enabled by the lift assembly are additionally disclosed herein.