Abstract: Disclosed herein is a method for depth-profiling of samples including a target region including a lateral structural feature. The method includes projecting an optical pump pulse on a semiconductor device comprising a target region, such as to produce an acoustic pulse which propagates within the target region of the semiconductor device, wherein a wavelength of the pump pulse is at least two times greater than a lateral extent of a lateral structural feature of the semiconductor device along at least one lateral direction, projecting an optical probe pulse on the semiconductor device, such that the probe pulse undergoes Brillouin scattering off the acoustic pulse within the target region, detecting a scattered component of the probe pulse to obtain a measured signal, and analyzing the measured signal to obtain a depth-dependence of at least one parameter characterizing the lateral structural feature.

Abstract: A method for detecting a rare stochastic defect, the method may include searching for a rare stochastic defect in a dense pattern of a substrate, wherein the rare stochastic defect is (a) of nanometric scale, (b) appears in a functional pattern of the substrate with a defect density that is below 10?9, and (c) appears in the dense pattern with a defect density that is above 10?7; wherein the dense pattern is a dense representation of the functional pattern that differs from the functional pattern by at least one out of (a) a distance between features of the dense pattern, and (b) a width of the features of the dense pattern; and estimating the occurrence of the rare stochastic defect within the functional pattern based on an outcome of the searching.

Abstract: An optical inspection system, including (a) an illumination optics that is configured to generate an illumination light beam and to illuminate a sample with the illumination light beam; (b) at least one collection optics configured to collect light from the sample as a result of an impingement of the illumination light beam on the sample; (c) at least one detector configured to detect at least one detected light beam outputted from the at least one collection optics; (d) multiple polarizers that comprise at least one inhomogeneous polarizer and at least one half-wave plate; and (e) at least one movement unit that is configured to move, under a control of a control unit of the optical inspection system, the at least one inhomogeneous polarizer thereby impacting a polarization of one or more light beams out of the illumination light beam, and the at least one detected light beam.

Abstract: There are provided systems and methods of obtaining a segmented image of a semiconductor specimen, the image comprising first structural elements, obtaining a reference image of the semiconductor specimen, the reference image being based on design data and comprising second structural elements, determining, for at least one pair of elements including a first structural element and a corresponding second structural element, data Dspat informative of a spatial transformation required in order to match the elements of the pair in accordance with a matching criterion, and determining at least one of data informative of a defect in the first structural element and data informative of edge roughness of the first structural element using at least Dspat.

Abstract: An adjustable attenuation optical unit that may include a lightguide that includes a core, wherein the core comprises an output, an input and an exterior surface; and an adjustable attenuator that is configured to define an interfacing parameter related to an area of the exterior surface thereby receiving at least some of the light that impinges on the area.

Abstract: There is provided a system and a method comprising obtaining a sequence of a plurality of frames of an area of a specimen, wherein at least one frame of the sequence is transformed with respect to another frame, obtaining a reference frame based at least on a first frame of the sequence, determining, based on the reference frame, a reference pattern, wherein the reference pattern is informative of a structural feature of the specimen in the area, for a given frame of the sequence, determining, based on the given frame, a pattern informative of said structural feature in the area, determining data Dshrinkage informative of an amplitude of a spatial transformation between the reference pattern and the pattern, generating a corrected frame based on said pattern and Dshrinkage and generating an image of the area.

Abstract: Disclosed herein is a method for detecting defects on a sample. The method includes obtaining scan data of a region of a sample in a multiplicity of perspectives, and performing an integrated analysis of the obtained scan data. The integrated analysis includes computing, based on the obtained scan data, and/or estimating cross-perspective covariances, and determining presence of defects in the region, taking into account the cross-perspective covariances.

Abstract: A reactive particles supply system that may include an adjustable gas supply unit that is arranged to supply gas and to set a gas condition, a reactive particles supply unit that may be arranged to receive the gas, and an adjustable reactive particles output unit that may include a reactive particles input, a second reactive particles output, and a reactive particles path. The second reactive particles output is configured to output reactive particles towards an opening of a vacuumed chamber. The adjustable reactive particles output unit is arranged to mechanically configure at least one element of the reactive particles path according to the reactive particles condition.

Abstract: A method and a system for adding a floating analog voltage signal over a reference analog voltage signal. The system and the method may accurately control the value of the floating analog voltage signal—using an optical feedback path, and may directly add the floating analog voltage signal over the reference analog voltage signal.

Abstract: Disclosed herein is s computer-based method for obtaining and analyzing multi-die scan data of a patterned wafer. The method includes sequentially implementing an operation of scanning a respective plurality of sets of slices on a wafer, and, per each slice segment in a multiplicity of slice segments in the plurality of sets of slices, an operation of performing die-to-multi-die (D2MD) analysis of scan data of the slice segment in order to detect defects in the slice segment. Each set of slices may constitute a subset of the totality of slices on the respective die-column. Sets scanned in a same implementation are analogous to one another, thereby facilitating—in the die-to-multi-die analysis of scan data of a slice segment—taking into account, as reference, scan data of areas on other die-columns, which were scanned in the same implementation.

Abstract: A method of processing a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an ion beam with a focused ion beam (FIB) column; focusing the ion beam on the sample and scanning the focused ion beam across the region of the sample thereby generating secondary electrons that are ejected from a surface of the sample within the region; and during the scanning, applying a negative bias voltage to an electrically conductive structure proximate the region to alter a trajectory of the secondary electrons and repel the secondary electrons back to the sample surface, wherein the electrically conductive structure is one of a gas injection nozzle, a voltage pin or a nano-manipulator.

Abstract: A method for high throughput defect detection, the method may include (i) performing, using first detection channels, a simultaneous inspection process through a segmented pupil plane that comprises multiple pupil plane segments to select one or more pupil plane segments of interest out of multiple pupil plane segments; (ii) configuring one or more configurable filters related to second detection channels to pass radiation received from the one or more pupil plane segment of interest and to block radiation received from one or more non-of-interest pupil plane segments; and (iii) performing, using the second detection channels, a partially masked pupil plane inspection process.

Abstract: An optical inspection system that may include an illumination optics configured to generate an illumination light beam and to illuminate a sample with the illumination light beam; at least one collection optics configured to collect light from the sample; at least one detector configured to detect at least one detected light beam outputted from the at least one collection optics; multiple polarizers that are configured to (a) set a polarization of the illumination light beam by selectively introducing, under a control of the control unit, at least one illumination optics polarization change, and (b) set a polarization of the at least one detected light beam by selectively introducing, under a control of the control unit, at least one collection optics polarization change. The multiple polarizers may include one or more illumination half-wave plates, one or more quarter-wave plates, and one or more inhomogeneous polarizers.

Abstract: There is provided a method and a system configured to compensate for image distortions.

Abstract: A method of evaluating a region of interest of a sample including: positioning the sample within in a vacuum chamber of an evaluation tool that includes a scanning electron microscope (SEM) column and a focused ion beam (FIB) column; acquiring a plurality of two-dimensional images of the region of interest by alternating a sequence of delayering the region of interest with a charged particle beam from the FIB column and imaging a surface of the region of interest with the SEM column; generating an initial three-dimensional data cube representing the region of interest by stacking the plurality of two-dimensional images on top of each other in an order in which they were acquired; identifying distortions within the initial three-dimensional data cube; and creating an updated three-dimensional data cube that includes corrections for the identified distortions.

Abstract: A system for classifying a pattern of interest (POI) on a semiconductor specimen is disclosed. The system comprises a processor and memory circuitry. The memory circuitry is configured to obtain a high-resolution image of the POI, and to generate data usable for classifying the POI in accordance with a defectiveness-related classification. To generate the data, a machine learning model is utilized that has been trained in accordance with training samples. The training samples include a high-resolution training image captured by scanning a respective training pattern on a specimen, the respective training pattern being similar to the POI. The training samples also include a label associated with the image, the label being derivative of low-resolution inspection of the respective training pattern.

Abstract: Disclosed herein is a method for non-destructive hybrid acousto-optic and scanning electron microscopy-based metrology. The method includes: (i) obtaining acousto-optic and scanning electron microscopy measurement data of an inspected structure on a sample; (ii) processing the measurement data to extract values of key measurement parameters corresponding to the acousto-optic measurement data and the scanning electron microscopy measurement data, respectively; and (iii) obtaining estimated values of one or more structural parameters of the inspected structure by inputting the extracted values into an algorithm, which is configured to jointly process the extracted values to output estimated values of the one or more structural parameters.

Abstract: A method for determining a depth of a hidden structural element of an object, the method may include (i) obtaining contrast information regarding a contrast between (a) hidden structural element detection signals that are indicative of electrons emitted from the hidden structural element, and (b) surroundings detection signals that are indicative of electrons emitted from a surroundings of the hidden structural element; wherein the hidden structural element detection signals and the surroundings detection signals are detected as a result of a scanning of a region of the object, with an illuminating electron beam; wherein the region comprises the hidden structural element and the surroundings; and (ii) determining the depth of the hidden structural element based, at least in part, on the contrast information.

Abstract: A method and a system for adding a floating analog voltage signal over a reference analog voltage signal. The system and the method may accurately control the value of the floating analog voltage signal—using an optical feedback path, and may directly add the floating analog voltage signal over the reference analog voltage signal.

Abstract: A method, an inspection system and a sensing unit. The sensing unit may include a light recycling optics and a photon to electron converter. The photon to electron converter is configured to receive a first light beam emitted from the object and impinging on the partially reflective surface at a first oblique angle, absorb a first portion and reflect a second portion of the first light beam to provide a first reflected beam. The light recycling optics is configured to redirect, towards the partially reflective surface, one or more reflected beams reflected from the partially reflective surface to provide one or more recycled beams. The photon to electron converter is configured to output electrons that represents an absorbed portion of the input light beam and an absorbed portion of each one of the one or more recycled beam.