Abstract: A method of performing x-ray spectroscopy material analysis of a region of interest within a cross-section of a sample using an evaluation system that includes a focused ion beam (FIB) column, a scanning electron microscope (SEM) column, and an x-ray detector, including: forming a lamella having first and second opposing side surfaces in the sample by milling, with the FIB column, first and second trenches in the sample to expose the first and second sides surface of the lamella, respectively; depositing background material in the second trench, wherein the background material is selected such that the background material does not include any chemical elements that are expected to be within the region of interest of the sample; generating a charged particle beam with the SEM column and scanning the charged particle beam across a region of interest on the first side surface of the lamella such that the charged particle beam collides with the first side surface of the lamella at a non-vertical angle; and detect

Abstract: A method of performing x-ray spectroscopy material analysis of a region of interest within a cross-section of a sample using an evaluation system that includes a focused ion beam (FIB) column, a scanning electron microscope (SEM) column, and an x-ray detector, including: forming a lamella having first and second opposing side surfaces in the sample by milling, with the FIB column, first and second trenches in the sample to expose the first and second sides surface of the lamella, respectively; depositing background material in the second trench, wherein the background material is selected such that the background material does not include any chemical elements that are expected to be within the region of interest of the sample; generating a charged particle beam with the SEM column and scanning the charged particle beam across a region of interest on the first side surface of the lamella such that the charged particle beam collides with the first side surface of the lamella at a non-vertical angle; and detect

Abstract: A method of evaluating a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an electron beam with a scanning electron microscope (SEM) column that includes an electron gun at one end of the column and a column cap at an opposite end of the column; focusing the electron beam on the sample and scanning the focused electron beam across the region of the sample, while the SEM column is operated in tilted mode, thereby generating secondary electrons and backscattered electrons from within the region; and during the scanning, collecting backscattered electrons with one or more detectors while applying a negative bias voltage to the column cap to alter a trajectory of the secondary electrons preventing the secondary electrons from reaching the one or more detectors.

Abstract: Disclosed herein is a method for increasing signal-to-noise (SNR) in optical imaging of defects on unpatterned wafers. The method includes: (i) irradiating a region of an unpatterned wafer with a substantially polarized, incident light beam, and (ii) employing relay optics to collect and guide, radiation scattered off the region, onto a segmented polarizer comprising at least four polarizer segments characterized by respective dimensions and polarization directions. The respective dimensions and polarization direction of each of the at least four polarizer segments are such that an overall power of background noise radiation, generated in the scattering of the incident light beam from the region and passed through all of the at least four polarizer segments, is decreased as compared to utilizing a linear polarizer.

Abstract: A method, non-transitory computer readable medium and an evaluation system for evaluating an intermediate product related to a three dimensional NAND memory unit. The evaluation system may include an imager and a processing circuit. The imager may be configured to obtain, via an open gap, an electron image of a portion of a structural element that belongs to an intermediate product. The structural element may include a sequence of layers that include a top layer that is followed by alternating nonconductive layers and recessed conductive layers. The imager may include electron optics configured to scan the portion of the structural element with an electron beam that is oblique to a longitudinal axis of the open gap. The processing circuit is configured to evaluate the intermediate product based on the electron image. The open gap (a) exhibits a high aspect ratio, (b) has a width of nanometric scale, and (c) is formed between structural elements of the intermediate product.

Abstract: There is provided a system and method of performing a measurement with respect to an epitaxy formed in a finFET, the epitaxy being separated with at least one adjacent epitaxy by at least one HK fin. The method comprises obtaining an image of the epitaxy and the at least one HK fin, and a gray level (GL) profile indicative of GL distribution of the image; detecting edges of the at least one HK fin; determining two inflection points of the GL profile within an area of interest in the image; performing a critical dimension (CD) measurement between the two inflection points; determining whether to apply correction to the CD measurement based on a GL ratio indicative of a relative position between the epitaxy and the at least one HK fin; and applying correction to the CD measurement upon the GL ratio meeting a predetermined criterion.

Abstract: There is provided a system and method of generating training data for training a Deep Neural Network usable for examination of a semiconductor specimen. The method includes: obtaining a first training image and first labels respectively associated with a group of pixels selected in each segment, extract a set of features characterizing the first training image, train a machine learning (ML) model using the first labels, values of the group of pixels, and the feature values of each of the set of features corresponding to the group of pixels, process the first training image using the trained ML model to obtain a first segmentation map, and determine to include the first training image and the first segmentation map into the DNN training data upon a criterion being met, and to repeat the extracting of the second features, the training and the processing upon the criterion not being met.

Abstract: There is provided a method, a non-transitory computer readable medium, and a system for measuring a pattern. The method can include (a) obtaining an electron image of an area of a sample, the area comprises the pattern, the electron image comprises multiple lines; each line comprises information obtained by moving an electron beam over a scan line; (b) generating a converted image by applying a noise reduction kernel on the electron image, the noise reduction kernel has a width that represents a number of consecutive lines of the electron image; the width is determined based on relationships between analysis results obtained when using noise reduction kernels of different widths; and (c) analyzing the converted image to provide a pattern measurement.

Abstract: A method and a system for obtaining information from a sample. The system may include (i) a spatial filter that includes a blocking element and an aperture; (ii) an illumination unit; and (iii) an optical unit that includes an optical objective assembly. The illumination unit may be configured to illuminate the optical objective assembly with oblique radiation. The optical objective assembly may be configured to (a) focus the oblique radiation onto the sample, (b) collect radiation from the sample to provide collected radiation, and (c) reflect the oblique radiation to provide back reflected radiation. The optical unit may be configured to (a) focus the collected radiation to provide focused collected radiation, (b) direct the focused collection radiation towards the aperture, (c) focus the back reflected radiation to provide focused back reflected radiation, and (d) direct the focused back reflected radiation towards the blocking element.

Abstract: There is provided a system and method of generating a metrology recipe usable for examining a semiconductor specimen, comprising: obtaining a first image set comprising a plurality of first images captured by an examination tool, obtaining a second image set comprising a plurality of second images, wherein each second image is simulated based on at least one first image, wherein each second image is associated with ground truth data; performing a first test on the first image set and a second test on the second image set in accordance with a metrology recipe configured with a first parameter set, and determining, in response to a predetermined criterion not being met, to select a second parameter set, configure the metrology recipe with the second parameter set, and repeat the first test and the second test in accordance with the metrology recipe configured with the second parameter set.

Abstract: There is provided a system and method of resource verification for an application, the method comprising: obtaining a checklist of resources required for running the application, wherein the checklist is generated by: obtaining source code and an executable file of the application; running the executable file, and monitoring resources accessed by the application during execution thereof and corresponding access type of each resource, giving rise to a first list of resources; performing static code analysis of the source code including searching the source code for one or more specific code patterns indicative of respective resources to be accessed and corresponding access types thereof, and generating a second list of resources; and mapping the first list and second list of resources to generate the checklist of resources. The method further comprises automatically verifying the checklist of resources, giving rise to a verification result.

Abstract: A method of performing x-ray spectroscopy surface material analysis of a region of interest of a sample with an evaluation system that includes a scanning electron microscope (SEM) column and an x-ray detector, the method comprising: identifying an element expected to be within the region of interest; selecting a landing energy for a charged particle beam generated by the SEM column based on the identified element; scanning the region of interest with a charged particle beam set to the selected landing energy; detecting x-rays generated while the region of interest is scanned by the charged particle beam; and generating a two-dimensional image of the scanned region of interest based on the detected x-rays.

Abstract: A method of performing x-ray spectroscopy surface material analysis of a region of interest of a sample with an evaluation system that includes a scanning electron microscope (SEM) column and an x-ray detector, the method comprising: identifying an element expected to be within the region of interest; selecting a landing energy for a charged particle beam generated by the SEM column based on the identified element; scanning the region of interest with a charged particle beam set to the selected landing energy; detecting x-rays generated while the region of interest is scanned by the charged particle beam; and generating a two-dimensional image of the scanned region of interest based on the detected x-rays.

Abstract: A system that may include a radiation source to generate a beam of coherent radiation; traveling lens optics to focus the beam to generate multiple spots on a surface of a sample and to scan the spots together over the surface; collection optics to collect the radiation scattered from the multiple spots and to focus the collected radiation to generate a pattern of interference fringes; and a detection unit to detect changes in the pattern of interference fringes.

Abstract: A system and method for specimen examination, the system comprising a processing and memory circuitry (PMC) for: obtaining an image of at least a part of a specimen, the image acquired by an examination tool; receiving one or more characteristics of a defect of interest and a location of interest associated therewith; modifying within the image one or more pixels corresponding to the location of interest, wherein the modification is provided in accordance with a characteristic of the defect of interest, thereby planting the defect of interest into the image; processing the modified image to detect locations of potential defects of the specimen in accordance with a detection recipe; and determining whether the detected locations include the location of interest. Subject to the location of interest not being detected, modifying the detection recipe to enable detecting the planted defect of interest at the location of interest.

Abstract: A method, a non-transitory computer readable medium and a system for focusing an electron beam. The method may include focusing the electron beam on at least one evaluated area of a wafer, based on a height parameter of each one of the at least one evaluated area. The wafer includes a transparent substrate. The height parameter of each one of the at least one evaluated area is determined based on detection signals generated as a result of an illumination of one or more height-measured areas of the wafer with a beam of photons. The illumination occurs while one or more supported areas of the wafer contact one or more supporting elements of a chuck, and while each one of the one or more height-measured areas are spaced apart from the chuck by a distance that exceeds a depth of field of the optics related to the beam of photons.

Abstract: A system of classifying a pattern of interest (POI) on a semiconductor specimen, where the system includes a processor and memory circuitry configured to obtain a high-resolution image of the POI, and generate data usable for classifying the POI in accordance with a defectiveness-related classification. Generating the data utilizes a machine learning model that has been trained in accordance with training samples. The training samples include a high-resolution training image captured by scanning a respective training pattern on a specimen, the respective training pattern being similar to the POI, and a label associated with the image. The label is derivative of low-resolution inspection of the respective training pattern.

Abstract: A method and a system for detecting backscattered electrons in a multi-beam electron column.

Abstract: A method, a non-transitory computer readable medium and a device. The method may include (a) introducing a voltage difference between an absolute value of a negative pole of the electrostatic chuck and an absolute value of a positive pole of the electrostatic chuck, the introducing occurs while the wafer is supported by the electrostatic chuck and is contacted by one or more conductive contact pins of the electrostatic chuck; (b) monitoring, by an electrostatic sensor that comprises a sensing element, a charge at a point of measurement located at a front side of the wafer, at different points of time that follow a start of the introducing of the voltage difference, to provide monitoring results; and (c) determining an electrical parameter of the contact between the wafer and the electrostatic chuck, based on the monitoring results.

Abstract: The present invention relates to a sensor for electron detection emitted from an object to be used with a charged particle beam column being operated at a certain column and wafer voltage. The sensor is configured and operable to at least reduce interaction of negative ions with the active area of the sensor while minimizing electrons energy loss. The sensor is also configured and operable to minimize both gradual degradation of a cathodoluminescence efficiency of the active area and dynamic change of cathodoluminescence generated during operation of the sensor and evolving throughout the scintillator's lifetime.