Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor, a pump coupled to the plasma chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly comprising a plurality of filaments extending laterally through the plasma chamber, each filament including a conductor surrounded by a cylindrical insulating shell, the plurality of filaments including a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments, a first bus coupled to the first multiplicity of filaments and a second bus coupled to the second multiplicity of filaments, an RF power source to apply RF signal the intra-chamber electrode assembly, and at least one RF switch configured to controllably electrically couple and decouple the first bus from one of i) ground, ii) the RF power source, or iii) the second bus.

Abstract: Systems and methods discussed herein relate to patterning substrates during lithography and microlithography to form features to a set or sets of critical dimensions using dose. The dose maps are generated based upon images captured during manufacturing to account for process variation in a plurality of operations employed to pattern the substrates. The dose maps are used along with imaging programs to tune the voltages applied to various regions of a substrate in order to produce features to a set or sets of critical dimensions and compensate for upstream or downstream operations that may otherwise result in incorrect critical dimension formation.

Abstract: A method of fabricating a negative electrode for an electrochemical cell may comprise: providing an electrically conductive substrate; depositing a metal layer on the substrate; anodizing the metal layer to form a porous layer on the substrate; depositing a layer of ion conducting material on the porous layer, the layer extending at least partially into pores of the porous layer; densifying the layer of ion conducting material; depositing a layer of alkali metal on the densified layer of ion conducting material; attaching a temporary electrode to the layer of alkali metal and passing a current between the temporary electrode and the substrate to drive alkali metal through the densified layer of ion conducting material to the surface of the substrate, forming an alkali metal reservoir at the surface of the substrate. Furthermore, an electrically conductive mesh may be used in place of the porous layer on the substrate.

Abstract: Processing chambers including lid assemblies which form a volume above an injector assembly to decrease the deflection of the injector assembly as a result of the pressure differential between the processing side of the injector assembly and the atmospheric side of the injector assembly.

Abstract: A substrate polishing apparatus is disclosed that includes a polishing platform having two or more zones, each zone adapted to receive a different slurry component. A substrate polishing system is provided having a holder to hold a substrate, a polishing platform having a polishing pad, and a distribution system adapted to dispense, in a timed sequence, at least two different slurry components selected from a group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component. Polishing methods and systems adapted to polish substrates are provided, as are numerous other aspects.

Abstract: There is provided a method of examining defects in a semiconductor specimen and a system thereof. The method comprises: processing a first defect map obtained for a first semiconductor specimen to assign cluster-seed (CS) scores to at least some of the classified defects presented therein, wherein a CS score of a given defect is indicative of a number of neighboring defects classified to the same class as the given defect; upon obtaining a second defect map for a second semiconductor specimen, using the CS scores assigned to the at least some of the classified defects presented in the first defect map to select, among defects presented in the second defect map, defects for review, wherein the first defect map and the second defect map present respective defects in an attribute hyperspace; and reviewing defects selected in the second defect map, thereby obtaining classified defects presented in the second semiconductor specimen.

Abstract: An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of Y3Al5O12, Y4Al2O9, Er2O3, Gd2O3, Er3Al5O12, Gd3Al5O12 and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.

Abstract: Some implementations of a retaining ring has an inner surface having a first portion formed of multiple planar facets and a second portion that adjoins the first portion along a boundary and includes a frustoconical surface that is sloped downwardly from outside in. Some implementations of the retaining ring have a crenellated or serpentine inner surface, and/or an inner surface with alternating region of different surface properties or different tilt angles.

Abstract: In one embodiment, an adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the first annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.

Abstract: Magnetrons for plasma sputter chambers, plasma sputter chambers including magnetrons and methods of processing a substrate such as an EUV mask blank in a plasma sputter chamber are disclosed. The magnetron comprises a plurality of elongate magnets arranged in a pattern where there is an unbalance ratio greater than 1 and less than 3.

Abstract: Pedestal assemblies with a thermal barrier plate, a torque plate and at least one kinematic mount to change a plane formed by the thermal barrier plate are described. Susceptor assemblies and processing chambers incorporating the pedestal assemblies are also described. Methods of leveling a susceptor to form parallel planes between the susceptor surface and a gas distribution assembly surface are also described.

Abstract: A method for generating a synthetic image of a region of an object, includes: generating, by a charged particle microscope, a charged particle microscope image of the region of the object; calculating a sparse representation of the charged particle microscope image; wherein the sparse representation of the charged particle microscope image comprises multiple first atoms; generating the synthetic image of the region, wherein the synthetic image of the region is formed from multiple second atoms; wherein the generating of the synthetic image of the region is based on a mapping between the multiple first atoms and the multiple second atoms; wherein the charged particle microscope image and the multiple first atoms are of a first resolution; and wherein the synthetic image of the region and the multiple second atoms are of a second resolution that is finer than the first resolution.

Abstract: Embodiments described herein include a modular high-frequency emission source comprising a plurality of high-frequency emission modules and a phase controller. In an embodiment, each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment, each oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, each amplification module is coupled to an oscillator module, in an embodiment, each applicator is coupled to an amplification module. In an embodiment, the phase controller is communicatively coupled to each oscillator module.

Abstract: Robots including spaced upper arms are described. The robot includes first and second upper arms rotatable about a shoulder axis wherein the second upper arm is spaced from the first upper arm. The other robot components (first and second forearms, first and second wrist members, and first and second end effectors) are interleaved in the space between the first and second upper arms. Each of the first and second upper arms and first and second forearms may be individually and independently controlled. Methods of operating the robot and electronic device processing systems including the robot are provided, as are numerous other aspects.

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes an edge ring having a top surface and a bottom surface. An adjustable tuning ring is positioned beneath the bottom surface of the edge ring. The adjustable tuning ring has an upper surface and a lower surface. The lower surface is configured to interface with an actuating mechanism configured to move the adjustable tuning ring relative to the edge ring.

Abstract: Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

Abstract: A method for evaluating an object, the method may include acquiring, by a charged particle beam system, an image of an area of a reference object, wherein the area includes multiple instances of a structure of interest, and the structure of interest is of a nanometric scale; determining multiple types of attributes from the image; reducing a number of the attributes to provide reduced attribute information; generating guidelines, based on the reduced attribute information and on reference data, for evaluating the reduced attribute information; and evaluating an actual object by implementing the guidelines.

Abstract: Embodiments described herein relate to display devices, e.g., virtual and augmented reality displays and applications. In one embodiment, a planar substrate has stepwise features formed thereon and emitter structures formed on each of the features. An encapsulating layer is disposed on the substrate and a plurality of uniform dielectric nanostructures are formed on the encapsulating layer. Virtual images generated by the apparatus disclosed herein provide for improved image clarity by reducing chromatic aberrations at an image plane.

Abstract: Embodiments of the present disclosure generally relate to an apparatus and method for reducing particle generation in a processing chamber. In one embodiment, an apparatus for processing a substrate is disclosed. The apparatus includes a chamber body, a lid assembly disposed above the chamber body, the lid assembly comprising a top electrode and a bottom electrode positioned substantially parallel to the top electrode, a gas distribution plate disposed between a substrate processing region and the lid assembly, and a substrate support disposed within the chamber body, the substrate support supporting having a substrate supporting surface, wherein the top electrode is in electrical communication with a radio frequency (RF) power supply and a DC bias modulation configuration, and the DC bias modulation configuration is configured to operate the top electrode at a constant zero DC bias voltage during a process.

Abstract: Embodiments include an electrostatic chuck assembly having an electrostatic chuck mounted on an insulator. The electrostatic chuck and insulator may be within a chamber volume of a process chamber. In an embodiment, a ground shield surrounds the electrostatic chuck and the insulator, and a gap between the ground shield and the electrostatic chuck provides an environment at risk for electric field emission. A dielectric filler can be placed within the gap to reduce a likelihood of electric field emission. The dielectric filler can have a flexible outer surface that covers or attaches to the electrostatic chuck, or an interface between the electrostatic chuck and the insulator Other embodiments are also described and claimed.