Abstract: Methods are provided that, in some embodiments that provide alignment of a first layer of a printing plate on a chuck. For example, in one embodiment, images of reference marks on a chuck are captured to determine the initial positions of the reference marks on the chuck. A reference model is created from those initial positions. Images of alignment marks on a reference plate are captured and the locations of the alignment marks are determined. A reference plate model is created from the positions of the alignment marks. A mapping model is then created from the reference model and the reference plate model.

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate. Methods described herein also provide for selective native oxide removal which enables removal of native oxide material without etching bulk oxide materials.

Abstract: An article comprises a plasma resistant ceramic material comprising 40-60 mol % of Y2O3, 35-50 mol % of ZrO2, and 10-20 mol % of Al2O3.

Abstract: A heater assembly for a substrate support assembly includes a body. The heater assembly further includes one or more main resistive heating elements disposed in the body and a plurality of additional resistive heating elements disposed in the body. The heater assembly further includes a plurality of temperature sensors disposed in the body, wherein one or more of the plurality of temperature sensors is disposed proximate to one of the plurality of additional resistive heating elements.

Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

Abstract: An apparatus for positioning micro-devices on a destination substrate includes a first support to hold a destination substrate, a second support to provide or hold a transfer body having a surface to receive an adhesive layer, a light source to generate a light beam, a mirror configured to adjustably position the light beam on the adhesive layer on the transfer body, and a controller. The controller is configured to cause the light source to generate the light beam and adjust the mirror to position the light beam on the adhesive layer so as to selectively expose one or more portions of the adhesive layer to create one or more neutralized portions. The transfer body and the destination substrate are moved away from each other and one or more micro-devices corresponding to the one or more neutralized portions of the adhesive layer remain on the destination substrate.

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R? is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

Abstract: The present disclosure relates to a method for creating regions of different device types on a substrate having different pitches. The method includes dividing a substrate into a first device type region and a second device type region. The method further includes forming a target etch layer on the substrate. The method further includes forming a bottom mandrel layer on the target etch layer. The method further includes forming a plurality of alternating first pillars of a top mandrel material and first trenches between the first pillars on the bottom mandrel layer in the first device type region. The plurality of first pillars has a first pitch. The method further includes forming a plurality of alternating second pillars of the top mandrel material and second trenches between the second pillars on the bottom mandrel layer in the second device type region. The plurality of second pillars has a second pitch. The method further includes depositing tone inversion material in the first trenches.

Abstract: Embodiments include devices and methods for desorbing molecules from a chamber wall. In an embodiment, a desorption device includes several light emitting diodes (LEDs) mounted on a substrate having a wafer form factor. The LEDs may emit ultraviolet (UV) radiation, such as UV radiation in a UV C range. In an embodiment, the LEDs are thermally coupled to a heat exchanger, such as a thermoelectric cooling device. The emitted radiation may uniformly irradiate a chamber wall to desorb water molecules from the chamber wall. Other embodiments are also described and claimed.

Abstract: Methods for seam-less gap fill comprising forming a flowable film by PECVD, treating the flowable film to form an Si—X film where X=C, O or N and curing the flowable film or Si—X film to solidify the film. The flowable film can be formed using a higher order silane and plasma. A UV cure, or other cure, can be used to solidify the flowable film or the Si—X film.

Abstract: A workpiece holder includes a puck having a cylindrical axis, a radius about the cylindrical axis, and a thickness. At least a top surface of the puck is substantially planar, and the puck defines one or more thermal breaks. Each thermal break is a radial recess that intersects at least one of the top surface and a bottom surface of the cylindrical puck. The radial recess has a thermal break depth that extends through at least half of the puck thickness, and a thermal break radius that is at least one-half of the puck radius. A method of processing a wafer includes processing the wafer with a first process that provides a first center-to-edge process variation, and subsequently, processing the wafer with a second process that provides a second center-to-edge process variation that substantially compensates for the first center-to-edge process variation.

Abstract: Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.

Abstract: Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The plasma resistant coating has a stress relief layer and a layer comprising a solid solution of Y2O3—ZrO2 and uniformly covers features, such as those having an aspect ratio of about 3:1 to about 300:1.

Abstract: A method of fabricating a color filter array including providing substrate, forming a multilevel structure that is attached to the substrate, etching the multilevel structure to expose first wells in the multilevel structure, filling at least the first wells in the multilevel structure with the first color component, curing the first color component, etching the multilevel structure to expose second wells in the multilevel structure, filling at least the second wells in the multilevel structure with a second color component, and curing the second color component.

Abstract: One or more metrology objects and one or more metrology operations may be identified. A design-based representation of a first metrology object of the one or more metrology objects may be received. Furthermore, an image-based representation of the first metrology object of the one or more metrology objects may be received where the one or more metrology operations include a first metrology operation associated with the first metrology object that is to be performed on the image-based representation of the first metrology object. The design-based representation of the first metrology object may be mapped with the image-based representation of the first metrology object. The first metrology operation may be performed based on the mapping.

Abstract: A copolymerized high temperature bonding component that includes a first amount of an organofluorine polymer and a second amount of an organosilicon polymer which are chemically bound to each other to form a copolymer. The bonding component may have properties that allow it to be used for binding dissimilar materials.

Abstract: An apparatus for supplying plasma products includes a plasma generation block that defines a toroidal plasma cavity therein. The plasma cavity is substantially symmetric about a toroidal axis, and the toroidal axis defines a first and second axial side of the plasma generation block. A magnetic element at least partially surrounds the plasma generation block at one azimuthal location with respect to the toroidal axis, such that a magnetic flux within the magnetic element induces a corresponding electric field into the plasma cavity to generate a plasma from one or more source gases, the plasma forming plasma products. The plasma generation block supplies the plasma products through a plurality of output apertures defined by the plasma generation block on the first axial side.

Abstract: Embodiments of the present disclosure are directed to a gimbal assembly, that includes a gimbal plate having a central opening, a pivot screw disposed within a pivot mount formed in the gimbal plate, wherein the pivot screw includes a spherical pivot head about which the gimbal plate pivots, one or more motors coupled to the gimbal plate configured to provide in-situ gimbal plate motion about the spherical pivot head, and a plurality of leveling indicators configured that determine deflection of gimbal plate.

Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing ammonia into the substrate processing region at a temperature above about 200° C. The methods may further include removing an amount of the metal-containing material.

Abstract: Implementations described herein generally relate to a flexible display devices, and more specifically to flexible cover lens films. The flexible cover lens film has improved strength, elasticity, optical transmission, and anti-abrasion properties, and contains a multi-layer hardcoat disposed on a substrate layer. The substrate layer has a thickness of 2 ?m to 100 ?m and the multi-layer hardcoat has a thickness of 1 ?m to 30 ?m. The mufti-layer hardcoat contains a first layer deposited using a wet deposition process, a second layer deposited using a dry deposition process, and one or more adhesion promotion layers. For optical properties, the multi-layer hardcoat has a total transmission greater than 88%, a haze of about 1% or less, and a yellowness index of b*<1. By combining wet and dry deposition processes to form the multi-layer hardcoat, the cover lens film is both flexible and strong with a hardness between 4H and 9H.