Abstract: A showerhead adapted for distributing gases into a process chamber and a method for forming dielectric layers on a substrate are generally provided. In one embodiment, a showerhead for distributing gases in a processing chamber includes an annular body coupled between a disk and a mounting flange. The disk has a plurality of holes formed therethrough. A lip extends from a side of the disk opposite the annular body and away from the mounting flange. The showerhead may be used for the deposition of dielectric materials on a substrate. In one embodiment, silicon nitride and silicon oxide layers are formed on the substrate without removing the substrate from a processing chamber utilizing the showerhead of the present invention.

Abstract: Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.

Abstract: Methods and apparatus to implement techniques for monitoring polishing a substrate. Two or more data points are acquired, where each data point has a value affected by features inside a sensing region of a sensor and corresponds to a relative position of the substrate and the sensor as the sensing region traverses through the substrate. A set of reference points is used to modify the acquired data points. The modification compensates for distortions in the acquired data points caused by the sensing region traversing through the substrate. Based on the modified data points, a local property of the substrate is evaluated to monitor polishing.

Abstract: A chemical mechanical polishing apparatus has a polishing pad, a carrier to hold a substrate against a first side of the polishing surface, and a motor coupled to at least one of the polishing pad and carrier head for generating relative motion therebetween. An eddy current monitoring system is positioned to generate an alternating magnetic field in proximity to the substrate, an optical monitoring system generates a light beam and detects reflections of the light beam from the substrate, and a controller receives signals from the eddy current monitoring system and the optical monitoring system.

Abstract: The present invention generally provides a method and apparatus for use in a physical vapor deposition chamber. In one embodiment, invention provides a shutter disk mechanism that eliminates the need for axially orientating a shutter disk to a robot blade that transfers the shutter disk to a substrate support.

Abstract: Methods and apparatus for monitoring a substrate surface during chemical mechanical polishing are disclosed.

Abstract: Low K dielectric films exhibiting low mechanical stress may be formed utilizing various techniques in accordance with the present invention. In one embodiment, carbon-containing silicon oxide films are formed by plasma-assisted chemical vapor deposition at low temperatures (300° C. or less). In accordance with another embodiment, as-deposited carbon containing silicon oxide films incorporate a porogen whose subsequent liberation reduces film stress.

Abstract: A substrate processing system that includes a deposition chamber having a reaction zone, a substrate holder that positions a substrate in the reaction zone, a gas distribution system that includes a gas inlet manifold for supplying one or more process gases to said reaction zone, a plasma power source for forming a plasma from a process gas introduced into the reaction zone of the deposition chamber and an impedance monitor that is electrically coupled to the deposition chamber to measure an impedance level of the plasma. In a preferred embodiment, the substrate holder is a first electrode and the gas inlet manifold is a second electrode and RF power is supplied by the plasma power source to either the first or second electrodes to form the plasma.

Abstract: The thermal flux processing device includes a continuous wave electromagnetic radiation source, a stage, optics, and a translation mechanism. The continuous wave electromagnetic radiation source is preferably a diode/s. The stage is configured to receive a semiconductor substrate thereon. The optics are preferably disposed between the continuous wave electromagnetic radiation source and the stage. Also, the optics are configured to focus continuous wave electromagnetic radiation from the continuous wave electromagnetic radiation source into a line of continuous wave electromagnetic radiation on an upper surface of the semiconductor substrate. A length of the line of continuous wave electromagnetic radiation extends across an entire width of the semiconductor substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another, and preferably includes a chuck for securely grasping the substrate.

Abstract: A vaporizer generating feed gas for the arc chamber of an ion source has a crucible which is heated to a temperature at which material in the crucible sublimes to produce a vapour for use as the feed gas. In addition to the heating element for heating the crucible, there is a cooling element in the form of a cooling duct extending along the length of the crucible for receiving the cooling fluid. Forced cooling of the crucible when the heating element is switched off enables the crucible to be cooled more quickly so that the supply of a feed gas can be terminated sooner. This is important if an ion source is being switched from one feed gas to another. Also, the crucible may be forced cooled simultaneously while energizing the heating element to enable the crucible to be accurately controlled at a lower operating temperature if desired.

Abstract: Systems and methods for optical inspection of patterned and non-patterned objects. The methods include determining a state of polarization of light reflected from the object, establishing a polarization state of the incident light, and filtering the reflected light by polarization so as to provide an optical signal that is detected by a detector.

Abstract: A system is provided in which a smaller flow of deposition solution is diverted from a larger flow of deposition solution flowing on an electrochemical deposition tool platform. The smaller flow is diverted to a dosing unit which may be on a separate platform. The dosing unit in one embodiment comprises a pressurized flow line.

Abstract: Plasma events are detected by analyzing the spectral emissions of a plasma process of a substrate. A plasma is monitored by a spectrometer which produces plasma emission data which includes an intensity value for each individual wavelength which is a large quantity of information. The plasma emission data is processed with an algorithm or combination of algorithms to reduce the quantity of the plasma emission data. A peak finding algorithm which identifies the wavelengths of light which are associated with a plasma process allowing the other wavelengths to be ignored. A data reduction algorithm provides a single value representative of the intensity of the emitted light from each peak. A noise reduction algorithm removes noise from the spectral signal by eliminating signals at wavelengths which do not exceed a threshold intensity and do not exceed a threshold wavelength span. The data may also be processed with principal component analysis to further reduce the optical emission data.

Abstract: An electrostatic chuck cleaning process that cleans an electrostatic chuck, equipped in a chamber, for chucking and holding a substrate. This method has (1) a plasma etching process that performs plasma etching on the electrostatic chuck, (2) a substrate mounting process that mounts a substrate on the electrostatic chuck that was subjected to plasma etching in the plasma etching process, and (3) a substrate removal process that removes the substrate that was mounted on the electrostatic chuck in the substrate mounting process.

Abstract: Embodiments of the present invention provide a method, article of manufacture, and apparatus for processing semiconductor wafers. The method includes preheating a semiconductor wafer in two types of chambers. In one embodiment, a first preheating chamber is a load lock and a second preheating chamber is a transition chamber. Semiconductor wafer processing systems which can perform embodiments of the method are presented.

Abstract: A polishing system can have a rotatable platen, a polishing pad secured to the platen, a carrier head to hold a substrate against the polishing pad, and an eddy current monitoring system including a coil or ferromagnetic body that extends at least partially through the polishing pad. A polishing pad can have a polishing layer and a coil or ferromagnetic body secured to the polishing layer. Recesses can be formed in a transparent window in the polishing pad.

Abstract: A carrier head for chemical mechanical polishing of a substrate includes a base and a flexible membrane extending beneath the base to define a chamber. The flexible membrane has a core of a first material and an outer layer of a second material having a lower adhesion to the substrate than the first material. An exposed surface of the outer layer provides a mounting surface for the substrate.

Abstract: Apparatus for optical assessment of a sample includes a radiation source, adapted to generate a beam of coherent radiation, and traveling lens optics, adapted to focus the beam so as to generate first and second spots on a surface of the sample and to scan the spots together over the surface. Collection optics are positioned to collect the radiation scattered from the first and second spots and to focus the collected radiation so as to generate a pattern of interference fringes. A detector detects a change in the pattern of the interference fringes as the spots are scanned over the surface.

Abstract: A compressible film that is detachably securable to a surface of a rigid structure in the carrier head. The compressible film has a plurality of apertures positioned to create a non-uniform pressure distribution on a substrate during polishing so as to improve polishing uniformity. The apertures may be spaced and positioned to provide a pressure distribution on the substrate that is locally uniform but globally non-uniform.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a membrane with an exterior grooved surface for improved chemical mechanical polishing. The exterior grooved surface provides a path for the flow of air from the portion between the membrane and a substrate.