Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract: A substrate having a patterned mask and exposed openings is provided in a process chamber having process electrodes. In a plasma ignition stage, a process gas is provided in the process chamber and is energized by maintaining the process electrodes at a plasma ignition bias power level. In an etch-passivating stage, an etch-passivating material is formed on at least portions of the substrate by maintaining the process electrodes at an etch-passivating bias power level. In an etching stage, the exposed openings on the substrate are etched by maintaining the process electrodes at an etching bias power level.

Abstract: In a plasma deposition system for depositing a film of sputtered target material on a substrate, the output of an RF generator coupled to a coil for generating a plasma can be varied during the deposition process so that heating and sputtering of the RF coil can be more uniform by “time-averaging” RF voltage distributions along the RF coil.

Abstract: The invention is a precleaning process suitable for fabricating metal plugs in a low-&kgr;, carbon-containing dielectric. More specifically, the invention is a process for cleaning a contact area of a metal conductor on a semiconductor workpiece so as to minimize damage to a low-&kgr;, carbon-containing dielectric overlying the metal. After forming contact openings in the low-&kgr; dielectric so as to expose contact areas on the underlying metal conductor, the contact areas are cleaned by exposing the workpiece to an atmosphere formed by plasma decomposition of a mixture of hydrogen-containing and helium gases. Surprisingly, our preclean process can repair damage to the dielectric caused by preceding process steps, such as oxygen plasma ashing processes for removing photoresist.

Abstract: Provided herein is a method of depositing a film on a substrate in a high temperature chemical vapor deposition (CVD) reactor, comprising the steps of polishing sharp corner(s) of the surface of a heater, wherein the heater provides heat to the substrate for deposition; coating the polished heater surface with a coating material; and depositing a film on the substrate in the CVD reactor, wherein the substrate is heated through the coated polished heater. Such method of polishing may also be used for reducing pitting of a coated heater and protecting the heater from corrosive environment in a CVD reactor.

Abstract: A method and apparatus for improving film stability and moisture resistance of a borophosphosilicate film. The BPSG film according to the present invention is formed under plasma conditions in which high and low frequency RF power is employed to generate the plasma. The high frequency power supply provides most of the energy to break the molecules in the process gas thereby forming the plasma and promoting the necessary reactions. The low frequency power supply regulates and controls ion bombardment of the BPSG film as it is formed. In a preferred embodiment, nitrogen is included in the process gas and the low frequency RF power supply is used to precisely control ion bombardment during deposition processing thereby allowing incorporation of an unexpectedly elevated amount of nitrogen into the film further improving film stability.

Abstract: A silicon nitride film is formed on a substrate so as to cover semiconductor devices. After having formed more than one layer of conducting members and interlayer dielectric portion, such as silicon oxide interlayer films on the silicon nitride film, an opening is formed in said interlayer dielectric portion so as to reach the silicon nitride film. The substrate with thus defined opening is etched in an etching solution containing hydrogen fluoride acid therein to remove away the silicon oxide interlayer portion. As the silicon oxide interlayer portion is etched in the solution, this forms electrical interconnection that are not surrounded with any oxides. As the silicon nitride film works as an etching stopper layer in this etching above, the semiconductor devices are protected against the etching process.

Abstract: An inventive edge cleaning device is provided for cleaning the edge a thin disc such as a semiconductor wafer. The inventive edge cleaning device has a sonic nozzle positioned so as to direct a liquid jet at the edge surface of the thin disc. Preferably the sonic nozzle is radially spaced from the thin disc's edge so that scrubbing, spin rinsing or spin cleaning may be simultaneously performed on the major surfaces of the thin disc as the thin disc edge is cleaned by the sonic nozzle. The liquid jet may include deionized water, NH4OH, KOH, TMAH, HF, citric acid, a surfactant, or other similar cleaning solutions, and the nozzle may remain stationary as the thin disc rotates or the nozzle may scan the circumference of the thin disc to clean the entire edge of the thin disc.

Abstract: A calibration instrument for calibrating a temperature probe, such as pyrometer, uses a stable light source and a filter to simulate a blackbody of a known temperature. An alignment tool aligns a light-emitting surface of the calibration instrument to the input of the temperature probe. The calibration instrument may include a fiber optic bundle to transmit light from the light source to the light emitting surface.

Abstract: A valve arrangement is provided that more effectively purges processing liquid from a processing liquid delivery system. With the valve arrangement only a small portion of the processing liquid path having a small wetting perimeter must be purged to affect replacement of a dysfunctional injection valve or any other component within the processing liquid delivery system. The valve arrangement comprises a first and a second isolation valve, a pump valve and purge valve configured to reduce the wetting perimeter defined by the four valves. The valve arrangement allows a dysfunctional injection valve or any other component to be replaced without health risk to humans or damage risk to a processing liquid delivery system employing the valve arrangement. During component replacement, the first and the second isolation valves are closed and the pump and the purge valves are opened so as to purge processing liquid from the isolated volume defined by the four valves.

Abstract: A substrate processing assembly includes an edge support and a heat distributing plate to absorb and transfer heat energy via radiation from a radiant heat source to a substrate on the edge support. The edge support defines a substrate support location to support a substrate at an edge of the substrate during processing. The assembly further includes a first heat distributing plate positioned generally parallel to the edge support. A plurality of edge support holding arms is coupled to the edge support. The plurality of edge support holding arms is also coupled to the first heat distributing plate to hold the first heat distributing plate spaced apart from the edge support. In another embodiment, the assembly can include a second heat distributing plate spaced apart from the edge support.

Abstract: A carrier head for a chemical mechanical polishing system includes a substrate sensing mechanism. The carrier head includes a base and a flexible member connected to the base to define a chamber. A lower surface of the flexible member provides a substrate receiving surface. The substrate sensing mechanism includes a sensor to measure a pressure in the chamber and generate an output signal representative thereof, and a processor configured to indicate whether the substrate is attached to the substrate receiving surface in response to the output signal.

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. In one embodiment, one or both of the signals to the substrate and the target are modulated. Preferably, the modulated signal to the substrate includes a negative voltage portion and a zero voltage portion.

Abstract: A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.

Abstract: A method and apparatus for electrochemically depositing a metal into a high aspect ratio structure on a substrate are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a first conductive material disposed thereon in a processing chamber containing an electrochemical bath, depositing a second conductive material on the first conductive material as the conductive material is contacted with the electrochemical bath by applying a plating bias to the substrate while immersing the substrate into the electrochemical bath, and depositing a third conductive material in situ on the second conductive material by an electrochemical deposition technique to fill the feature. The bias may include a charge density between about 20 mA*sec/cm2 and about 160 mA*sec/cm2. The electrochemical deposition technique may include a pulse modulation technique.

Abstract: A modular lift-pin assembly comprises a lift-pin having a distal end and a connector having a lift-pin end and an actuator end. The lift-pin end of the connector is coupled to the distal end of the lift-pin and an actuator pin is then coupled to the actuator end of the connector to actuate the lift-pin through the connector.

Abstract: The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyethers (“carrier”) and organic divalent sulfur compounds (“accelerator”), wherein the concentration of the carrier ranges from about 0.1 ppm to about 2500 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.05 ppm to about 1000 ppm of the plating solution. The plating solution is further improved by adding an organic nitrogen compound at a concentration from about 0.01 ppm to about 1000 ppm to improve the filling of vias on a resistive substrate.

Abstract: A method and system for controlling the introduction of a species according to a determined concentration profile of a film comprising the species introduced on a substrate. In one aspect, the method comprises controlling the flow rate of a species according to a determined concentration profile of a film introduced on a substrate, and introducing a film on a substrate, the film comprising the species at a first concentration at a first point in the film and a second concentration different than the first concentration at a second point in the film. Also, a bipolar transistor including a collector layer of a first conductivity type, a base layer of a second conductivity type forming a first junction with the collector layer, and an emitter layer of the first conductivity type forming a second junction with the base layer. An electrode configured to direct carriers through the emitter layer to the base layer and into the collector layer is also included.

Abstract: The present invention generally provides a robot that can transfer workpieces, such as silicon wafers, at increased speeds and accelerations and decelerations. More particularly, the present invention provides a robot wrist associated with the robot arm for mechanically clamping a workpiece to a workpiece handling member attached to the arm. The workpiece clamp selectively applies sufficient force to hold the workpiece and prevent slippage and damage to the workpiece during rapid rotation and linear movement of the handling member. In one embodiment, a clamp for securing silicon wafers uses two clamp fingers connected to a single flexure member to position and hold the wafer with minimal particle generation and wafer damage. The clamp is designed so that wafers are normally clamped except near full extension of the workpiece handling member to deliver or pick up a wafer.

Abstract: A semiconductor wafer processing substrate support assembly, comprises a substrate support platform having a centrally disposed recess, coupled to a base disposed above the centrally disposed recess, a plate disposed above the base, and a substrate support disposed above the plate. The substrate support assembly further comprises a plurality of o-rings having a plurality of lobes, wherein a first lobed o-ring of the plurality of lobed o-rings is disposed between the support platform and the base, a second lobed o-ring is disposed between the base and the plate, and a third lobed o-ring is disposed between the plate and the substrate support. Moreover, the plurality of lobed o-rings are utilized in the support assembly for reducing the number of o-rings required in the support assembly.