Abstract: A method for performing a bakeout test on a vacuum chamber without causing the ion gauge to fail turns the ion gauge off when it is not needed, even during part of the time that the chamber is held at a high vacuum, so as to minimize the opportunity for contaminants to react with and damage the ion gauge filament. Specifically, the method turns the gauge off when any heating elements in the chamber are turned on, so the added heat does not exacerbate the problems with reactions with the filament. Thus, the method turns the gauge off when the chamber is too hot. In one embodiment, the method employs a heating jacket to keep the gauge and its adapter from forming a cold spot at which water vapor can condense during part of the test.

Abstract: An inventive module and fabrication system for processing semiconductor devices reduces the overall cost per unit processed, by eliminating the need for expensive rotational robots. The modules and fabrication system are configured so that wafer handlers are required to travel only along linear paths. The inventive modules may include an integral conveyor or may couple a remote conveyor. Preferably, the conveyor is positioned normal to the wafer handler's transport path in order to achieve the most compact footprint.

Abstract: A method and apparatus for protecting a metal interconnect from corrosion due to contact with a low k dielectric material in a multilevel metallization and interconnect structure. To facilitate such protection, a barrier material, in the form of a sidewall spacer, is deposited between the dielectric material and the metal line.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH.sub.3 SiH.sub.3, and N.sub.2 O.

Abstract: The present invention provides a method and apparatus for preferential PVD conductor fill in an integrated circuit structure. The present invention utilizes a high density plasma for sputter deposition of a conductive layer on a patterned substrate, and a pulsed DC power source capacitively coupled to the substrate to generate an ion current at the surface of the substrate. The ion current prevents sticking of the deposited material to the field areas of the patterned substrate, or etches deposited material from the field areas to eliminate crowning or cusping problems associated with deposition of a conductive material in a trench, hole or via formed on the substrate.

Abstract: A turbo-axial fan assembly is provided for a clean-air supply system of a substrate handling module of a vacuum processing system. The turbo-axial fan assembly has one or more turbo-axial fans for generating airflow through the substrate handling environment. The turbo-axial fans have tunable vanes for controlling the speed of the airflow and efficiently using the available power.

Abstract: A lid assembly for a process chamber. The lid assembly includes a hinge having a hinge mount affixed to the chamber and a hinge arm. A pin extends from the hinge mount through an elongated slot in the hinge arm allowing both rotational and longitudinal motion of the hinge arm relative to the hinge mount. A support frame attached to the hinge arm has two side arms that extend perpendicularly from the hinge arms toward the front of the chamber. The lid is pivotally connected to the side arms by a pivot connection aligned with the center of mass of the lid. A detent extends from the lid through a slot in the side arm at a position offset from the pivot connection. The detent and slot serve to limit the allowable rotation of the lid relative to the lid support frame. Thus, the lid is allowed to float over the opening of the chamber as the lid is closed so that the lid may be positioned in parallel alignment relative to the opening of the chamber before being secured to the chamber.

Abstract: A carrier head for a chemical mechanical polishing apparatus has a plurality of independently movable rods. The rods both apply pressure a substrate and surround the substrate to provide a retainer.

Abstract: The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

Abstract: A method and apparatus for monitoring a parameter of the RF power applied to a plasma-enhanced chemical vapor deposition (PECVD) chamber. The parameter is used to monitor an aspect of the chamber or a process in the chamber. In particular, the parameter can be used to determine whether the susceptor is properly aligned, determine the spacing of the susceptor from the gas discharge head, determine whether the wafer is properly aligned on the susceptor, determine whether there has been any deterioration of the susceptor or the gas discharge head, and determine whether a chamber clean operation is complete.

Abstract: A showerhead used for dispensing gas over a wafer in chemical vapor deposition (CVD), especially for CVD of metals. The patterns of holes is tailored to compensate for thermal and other effects, in particular by increasing the density of holes toward the periphery of the wafer in three or more zones. Such a variable pattern is particularly useful for liquid precursors that are atomized in a carrier gas, in which case a second perforated plate in back of the showerhead face can be eliminated, thereby reducing the flow impedance and the required pressure of the liquid-entrained gas, which tends to deposit out at higher pressures. The reduce flow impedance is particularly useful for CVD of copper.

Abstract: A method and apparatus that accurately marks a wafer at selected locations to form a wafer coordinate system. The apparatus contains a wafer platen for retaining a wafer in a substantially horizontal orientation, a wafer orientation detector assembly and a marking assembly mounted above the wafer platen. In operation, the apparatus orients the wafer by identifying an orientation attribute of the wafer, then applies fiducial marks to the wafer. The wafer marking apparatus forms a portion of an integrated analytical tool.

Abstract: A readily removable deposition shield assembly for processing chambers such as chemical vapor deposition (CVD), ion implantation, or physical vapor deposition (PVD) or sputtering chambers, is disclosed. The shield assembly includes a shield member which is mounted to the chamber for easy removal, such as by screws, and defines a space along the periphery of the substrate support. A shadow ring is inserted into the peripheral space and is thus mounted in removable fashion and is automatically centered about the substrate by an alignment ring. The alignment ring removably rests upon a flange extending from the outer periphery of an electrostatic chuck. The shadow ring overlaps the cylindrical shield member, the alignment ring and the peripheral edge of a substrate retained by the chuck. Collectively, these components prevent deposition on the chamber and hardware outside the processing region.

Abstract: Slurry is provided to the surface of the polishing pad by pumping the slurry up through a central port, or by dripping the slurry down onto the surface of the polishing pad from a slurry feed tube. A slurry wiper, which may have one or more flexible members, sweeps the slurry evenly and thinly across the polishing pad. A control system coordinates the distribution of slurry to the polishing pad with the motion of the carrier head.

Abstract: A substrate support, for example an edge ring, includes an upper ledge for supporting a first substrate, such as a semiconductor wafer, during a first process, and a lower ledge contiguous with the upper ledge for supporting a second substrate during a second process for cleaning the substrate support. A method of processing substrates supported by the edge ring in a thermal process chamber is also disclosed.

Abstract: An improved method of in-situ cleaning a throttle valve in a CVD device and exhaust flow control apparatus for facilitating such cleaning. The throttle valve is repositioned such that it is juxtaposed in close proximity to the exhaust gas port of the reaction chamber. A plasma is then ignited in a cleaning gas mixture of nitrogen trifluoride, hexafluoroethane and oxygen.

Abstract: A dual stage load lock is provided for transfer of semiconductor wafers between an environment at atmospheric pressure and a high vacuum environment, such as a wafer processing system. The dual stage load lock includes a first load lock chamber and a second load lock chamber separated by a dividing ledge which extends a distance inwardly from the inner wall of the load lock assembly. The lower load lock chamber selectively communicates with a transfer chamber of the processing system, and is maintained at high vacuum. The upper load lock chamber selectively communicates with the external environment at atmospheric pressure. Therefore, the environment of the upper load lock chamber may vary between atmospheric pressure, when wafers are transferred between the load lock and the outside environment, and high vacuum, when the wafers are transferred between the first and second chambers of the load lock. The load lock may include modular chamber segments that can be arranged in a variety of configurations.

Abstract: The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.

Abstract: A vacuum processing system has a transfer chamber with a slit valve at which is attached a process chamber and with a slit valve insert disposed in the slit valve for matching up with the process chamber. The slit valve may be made of two pieces, an outer portion that slides into the transfer chamber's slit valve opening from the outside of the transfer chamber, and an inner portion that slides into the outer portion from the inside of the transfer chamber. The portions of the insert permit any process chamber to be attached to any slit valve opening. The outer portion may not be removed from the slit valve opening when a process chamber is attached to the transfer chamber, but the inner portion may be easily removed for servicing regardless of in whether a process chamber is attached.

Abstract: A hole filling process for an integrated circuit in which wiring levels in the integrated circuit are connected by a narrow hole, especially where the underlying level is silicon. First, a physical vapor deposition (PVD) process fills a barrier tri-layer into the hole. The barrier tri-layer includes sequential layers of Ti, TiN, and graded TiN.sub.x, grown under conditions of a high-density plasma. Thereafter, a first aluminum layer is PVD deposited under conditions of a high-density plasma. A filling aluminum layer is then deposited by standard PVD techniques.