Patents Assigned to Applied Materials
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Patent number: 7612491Abstract: A lamp assembly adapted for use in a substrate thermal processing chamber to heat the substrate to temperatures up to at least about 1100° C. is disclosed. In one embodiment, the lamp assembly comprises a bulb enclosing at least one radiation generating filament attached to a pair of leads, a lamp base configured to receive the pair of leads, a sleeve having a wall thickness of at least about 0.013 inches and a potting compound having a thermal conductivity greater than about 100 W/(K-m).Type: GrantFiled: February 15, 2007Date of Patent: November 3, 2009Assignee: Applied Materials, Inc.Inventors: Joseph M. Ranish, Khurshed Sorabji
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Patent number: 7611319Abstract: In at least one aspect, a system is provided that includes (1) a substrate carrier having first docking features; and (2) a loadport having second docking features. The second docking features are adapted to block docking of substrate carriers that do not include the first docking features and to allow docking of substrate carriers that include the first docking features. Numerous other aspects are provided.Type: GrantFiled: June 16, 2005Date of Patent: November 3, 2009Assignee: Applied Materials, Inc.Inventors: Vinay Shah, Martin R. Elliott, Jeffrey C. Hudgens, Eric Andrew Englhardt
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Patent number: 7611976Abstract: Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800° C. or higher, such as about 1,000° C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000° C. or greater, such within a range from about 1,050° C. to about 1,400° C., for about 500 milliseconds or less, such as about 100 milliseconds or less.Type: GrantFiled: July 5, 2006Date of Patent: November 3, 2009Assignee: Applied Materials, Inc.Inventors: Yi Ma, Khaled Z. Ahmed, Kevin L. Cunningham, Robert C. McIntosh, Abhilash J. Mayur, Haifan Liang, Mark Yam, Toi Yue Becky Leung, Christopher Olsen, Shulin Wang, Majeed Foad, Gary Eugene Miner
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Patent number: 7611217Abstract: Methods and apparatus for inkjet inkjet drop positioning are provided. A first method includes determining an intended deposition location of an ink drop on a substrate, depositing the ink drop on the substrate using an inkjet printing system, detecting a deposited location of the deposited ink drop on the substrate, comparing the deposited location to the intended location, determining a difference between the deposited location and the intended location, and compensating for the difference between the deposited location and the intended location by adjusting a parameter of an inkjet printing system. Numerous other aspects are provided.Type: GrantFiled: September 29, 2005Date of Patent: November 3, 2009Assignee: Applied Materials, Inc.Inventors: Bassam Shamoun, Janusz Jozwiak, Eugene Mirro, Quanyuan Shang, Shinichi Kurita, John M. White
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Patent number: 7611975Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.Type: GrantFiled: September 27, 2006Date of Patent: November 3, 2009Assignee: Applied Materials, Inc.Inventors: Adrian Murrell, Peter Michael Banks, Matthew Peter Dobson, Peter Kindersley, Takao Sakase, Marvin Farley, Shu Satoh, Geoffrey Ryding
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Publication number: 20090269878Abstract: A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.Type: ApplicationFiled: April 8, 2009Publication date: October 29, 2009Applicant: Applied Materials, Inc.Inventors: Francisco A. Leon, Lawrence C. West, Yuichi Wada, Gregory L. Wojcik, Stephen Moffatt
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Publication number: 20090269922Abstract: We disclose a method of depositing a metal seed layer on a wafer substrate comprising a plurality of recessed device features. The method comprises depositing a first portion of the metal seed layer on the wafer via plasma deposition at a sufficient ratio of wafer substrate bias to DC source power that bottom coverage is achieved while resputtering of surfaces of the recessed device features is inhibited. The method also comprises depositing a second portion of the metal seed layer at a ration of substrate RF bias to DC source power such that resputtering is not inhibited.Type: ApplicationFiled: June 25, 2009Publication date: October 29, 2009Applicant: Applied Materials, Inc.Inventors: Tony Chiang, Gongda Yao, Peijun Ding, Fusen E. Chen, Barry L. Chin, Gene Y. Kohara, Zheng Xu, Hong Zhang
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Publication number: 20090269930Abstract: A thermal anneal process for preventing formation of certain BPSG surface defects following an etch or silicon clean step using a fluorine and hydrogen chemistry. The thermal anneal process is carried out while protecting the wafer from moisture, by heating the wafer to a sufficiently high temperature for a sufficient duration of time to thermally diffuse boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer into the bulk of the layer. The thermal anneal process is completed by cooling the wafer to a sufficiently low temperature to fix the distribution of the boron and/or phosphorus materials in bulk of the doped glass layer.Type: ApplicationFiled: July 15, 2008Publication date: October 29, 2009Applicant: Applied Materials, Inc.Inventors: Haichun Yang, Chien-Teh Kao, Xinliang Lu, Mei Chang
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Publication number: 20090269934Abstract: Formation of BPSG surface defects upon exposure to atmosphere is prevented by a plasma treatment method for converting boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer to gas phase compounds. The treatment plasma is generated from a treatment process gas containing one of (a) a fluorine compound or (b) a hydrogen compound.Type: ApplicationFiled: July 15, 2008Publication date: October 29, 2009Applicant: Applied Materials, Inc.Inventors: Chien-Teh Kao, Haichun Yang, Xinliang Lu, Mei Chang
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Patent number: 7607881Abstract: An improved apparatus and method is provided for storing semiconductor wafer carriers, and for loading wafers or wafer carriers to a fabrication tool. The apparatus preferably provides an elevated port for receipt of wafer carriers from an overhead factory transport, allows for local interconnection among a plurality of the inventive apparatuses, and enables independent loading of the factory load port and the tool load port. An inventive wafer handling method which divides a lot of wafers into sublots and distributes the sublots among tools configured to perform the same process is also provided.Type: GrantFiled: June 18, 2007Date of Patent: October 27, 2009Assignee: Applied Materials, Inc.Inventor: Robert Z. Bachrach
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Patent number: 7608300Abstract: A variety of techniques may be employed alone or in combination to reduce the incidence of defects arising in dielectric stack structures formed by chemical vapor deposition (CVD). Incidence of a first defect type attributable to reaction between an unreacted species of a prior CVD step and reactants of a subsequent CVD step, is reduced by exposing a freshly-deposited dielectric layer to a plasma before any additional layers are deposited. Incidence of a second defect type attributable to the presence of incompletely vaporized CVD liquid precursor material, is reduced by exposing the freshly-deposited dielectric layer to a plasma, and/or by continuing the flow of carrier gas through an injection valve for a period beyond the conclusion of the CVD step.Type: GrantFiled: August 27, 2003Date of Patent: October 27, 2009Assignee: Applied Materials, Inc.Inventors: Christopher Dennis Bencher, Lee Luo
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Patent number: 7608173Abstract: A retaining ring for electrochemical mechanical processing is described. The ring has a conductive portion having an upper surface and a lower surface and an insulating portion. The insulating portion has one or more openings extending therethrough, exposing the lower surface of the conductive portion. An upper surface of the insulating portion contacts the lower surface of the conductive portion. In an electrochemical mechanical polishing process, the retaining ring can be biased separately from a substrate being polished.Type: GrantFiled: December 2, 2004Date of Patent: October 27, 2009Assignee: Applied Materials, Inc.Inventors: Antoine P. Manens, Feng Q Liu, Paul D. Butterfield, Alain Duboust, Rashid Mavliev
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Publication number: 20090263594Abstract: A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.Type: ApplicationFiled: June 29, 2009Publication date: October 22, 2009Applicant: Applied Materials, Inc.Inventors: Rongping Wang, Canfeng Lai, Yuri Trachuk, Siamak Salimian
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Publication number: 20090260566Abstract: A mask support 10 comprises a frame element 20 and an elastic element 30. The elastic element 30 is fixed to the frame element 20. The elastic element 30 is a component integrally formed of a flexible material. It comprises a lever or arm portion 37 having a first engagement protrusion 38 extending in an angle of approximately 90° from the free end of the arm portion 37. A mask assembly 40 comprises a laminar mask 41, e.g. manufactured from a thin metal foil, and connecting elements 42. The connecting elements 42 include an engagement portion 43 for engagement with the engagement protrusion 38 of the elastic element 30. The mask 41 may be attached/stretched to the mask support 10 as well as to detached from the mask support 10 comfortably.Type: ApplicationFiled: October 2, 2008Publication date: October 22, 2009Applicant: Applied Materials, Inc.Inventors: Heike Landgraf, Uwe Schuessler, Stefan Bangert
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Publication number: 20090261078Abstract: The time between illumination of adjacent zones of a workpiece edge is extended by a long cool-down period or delay, by interlacing a radiation beam scanning pattern. During the cool-down period, the beam successively scans (along the fast axis) two rows separated by about half the wafer diameter, and travels back and then forth (along the slow axis) across the distance between the two rows, while the radiation beam source continuously generates the beam.Type: ApplicationFiled: September 29, 2008Publication date: October 22, 2009Applicant: Applied Materials, Inc.Inventors: KAI MA, Abhilash J. Mayur, Vijay Parihar
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Publication number: 20090261276Abstract: An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.Type: ApplicationFiled: April 22, 2008Publication date: October 22, 2009Applicant: Applied Materials, Inc.Inventors: Dmitry LUBOMIRSKY, Muhammad M. RASHEED, Ellie Y. YIEH
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Patent number: 7605008Abstract: A method and apparatus for igniting a gas mixture into plasma using capacitive coupling techniques, shielding the plasma and other contents of the plasma reactor from the capacitively-coupled electric field, and maintaining the plasma using inductive coupling are provided. For some embodiments, the amount of capacitive coupling may be controlled after ignition of the plasma. Such techniques are employed in an effort to prevent damage to the surface of a substrate from excessive ion bombardment caused by the highly energized ions and electrons accelerated towards and perpendicular to the substrate surface by the electric field of capacitively-coupled plasma.Type: GrantFiled: April 2, 2007Date of Patent: October 20, 2009Assignee: Applied Materials, Inc.Inventors: Thai Cheng Chua, James P. Cruse, Cory Czarnik
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Patent number: 7605083Abstract: Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 ?, such as about 15 ?. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.Type: GrantFiled: May 28, 2008Date of Patent: October 20, 2009Assignee: Applied Materials, Inc.Inventors: Ken K. Lai, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
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Patent number: 7604708Abstract: A substrate cleaning apparatus has a remote source to remotely energize a hydrogen-containing gas to form an energized gas having a first ratio of ionic hydrogen-containing species to radical hydrogen-containing species. The apparatus has a process chamber with a substrate support, an ion filter to filter the remotely energized gas to form a filtered energized gas having a second ratio of ionic hydrogen-containing species to radical hydrogen-containing species, the second ratio being different than the first ratio, and a gas distributor to introduce the filtered energized gas into the chamber.Type: GrantFiled: February 12, 2004Date of Patent: October 20, 2009Assignee: Applied Materials, Inc.Inventors: Bingxi Sun Wood, Mark N. Kawaguchi, James S. Papanu, Roderick C. Mosely, Chiukun Steven Lai, Chien-Teh Kao, Hua Ai, Wei W. Wang
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Publication number: 20090255911Abstract: Laser scribing can be performed on a workpiece (104) such as substrates with layers formed thereon for use in a solar panel without need to rotate the workpiece (104) during the scribing process. A series of lasers (602, 622) can be used to concurrently remove material from multiple positions on the workpiece (104). Each laser (602, 622) can have at least one scanning device (614, 630, 632) positioned along a beam path thereof in order to adjust a position of the laser output relative to the workpiece (104). By adjusting the beam or pulse positions using the scanning devices (614, 630, 632) while translating the workpiece (104), substantially any pattern can be scribed into at least one layer of the workpiece (104) without the need for any rotation of the workpiece (104).Type: ApplicationFiled: April 10, 2009Publication date: October 15, 2009Applicant: Applied Materials, Inc.Inventors: Sriram Krishnaswami, Shinichi Kurita, Bassam Shamoun, Benjamin M. Johnston, John M. White, Jiafa Fan, Inchen Huang, Antoine P. Manens, Wei-Sheng Lei, Wei-Yung Hsu