Patents Assigned to Applied Materials
  • Publication number: 20090291231
    Abstract: The present invention refers to a method as well as an apparatus for producing a solar cell module having an array of photovoltaic cells on a common substrate, the apparatus comprising at least one treating chamber for depositing a layer on a substrate and at least one laser for patterning the deposited layer, wherein a treating chamber for laser patterning comprising means for setting up technical vacuum conditions is provided for.
    Type: Application
    Filed: May 21, 2008
    Publication date: November 26, 2009
    Applicant: Applied Materials, Inc.
    Inventor: Stephan Wieder
  • Patent number: 7624003
    Abstract: In at least one embodiment, the present invention is a method for thin-film process chamber data analysis, which includes acquiring chamber data, defining an adjustment portion of the chamber data and a steady-state portion of the chamber data, and forming a chamber model having an adjustment portion and a steady-state portion. The method can further include comparing the chamber model with a subject chamber to provide a chamber data comparison and utilizing the chamber data comparison.
    Type: Grant
    Filed: January 10, 2005
    Date of Patent: November 24, 2009
    Assignee: Applied Materials, Inc.
    Inventor: John M. Yamartino
  • Patent number: 7621798
    Abstract: A chemical mechanical polishing pad is described. A chemical mechanical polishing pad has an outer layer that includes a polishing surface, a first thinned region defined by a recess on a bottom surface of the pad, a first thick region surrounding the first thinned region, a second thinned region surrounding the first thick region, and a second thick region surrounding the second thinned region. The first thick region is not vertically extendable. The second thinned region defines one or more flexure mechanisms configured to make the first thinned region and the first thick region movable relative to the second thick region in a direction parallel or substantially parallel to the polishing surface.
    Type: Grant
    Filed: March 7, 2007
    Date of Patent: November 24, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Doyle E. Bennett, Boguslaw A. Swedek, David J. Lischka
  • Patent number: 7622005
    Abstract: Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate with sufficient pressure drop to more evenly distribute the gases prior to passing through the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.
    Type: Grant
    Filed: May 16, 2005
    Date of Patent: November 24, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Ganesh Balasubramanian, Juan Carlos Rocha-Alvarez, Tom K. Cho, Daemian Raj
  • Publication number: 20090287339
    Abstract: In one embodiment, a method for providing a user interface to graphically indicate a cause for fault-related events includes providing a user interface to illustrate a plurality of fault-related events for a plurality of recipes performed on a plurality of manufacturing process hardware tools, presenting in the user interface the plurality of recipes in a first axis and the plurality of manufacturing process hardware tools in a second axis, and graphically indicating in the user interface whether the plurality of fault-related events were caused by one of the plurality of manufacturing process hardware tools or one of the plurality of recipes performed on the one manufacturing process hardware tools.
    Type: Application
    Filed: February 10, 2009
    Publication date: November 19, 2009
    Applicant: Applied Materials, Inc.
    Inventor: Rinat Shimshi
  • Publication number: 20090283400
    Abstract: Disclosed invention uses a coaxial microwave antenna to enhance ionization in PVD or IPVD. The coaxial microwave antenna increases plasma density homogeneously adjacent to a sputtering cathode or target that is subjected to a power supply. The coaxial microwave source generates electromagnetic waves in a transverse electromagnetic (TEM) mode. The invention also uses a magnetron proximate the sputtering cathode or target to further enhance the sputtering. Furthermore, for high utilization of expensive target materials, a target can rotate to improve the utilization efficiency. The target comprises dielectric materials, metals, or semiconductors. The target also has a cross section being substantially symmetric about a central axis that the target rotates around. The target may have a substantially circular or annular a cross section.
    Type: Application
    Filed: May 14, 2008
    Publication date: November 19, 2009
    Applicant: Applied Materials, Inc.
    Inventors: MICHAEL W. STOWELL, Richard Newcomb
  • Publication number: 20090285665
    Abstract: It is provided a substrate processing module exchange unit for a vacuum coating installation having at least one compartment with one or more substrate processing modules mounted and with a module port, the module exchange unit comprising a vacuum chamber, the vacuum chamber comprising a module exchange aperture and a vacuum-tight unit connection means adapted for establishing a vacuum-tight connection between the module exchange aperture and the compartment around the module port, wherein the vacuum chamber is sized for including at least two substrate processing modules.
    Type: Application
    Filed: May 8, 2009
    Publication date: November 19, 2009
    Applicant: Applied Materials, Inc.
    Inventor: Juergen Heinrich
  • Publication number: 20090283217
    Abstract: A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.
    Type: Application
    Filed: May 15, 2008
    Publication date: November 19, 2009
    Applicant: Applied Materials, Inc.
    Inventors: DMITRY LUBOMIRSKY, Tien Fak Tan, Lun Tsuei
  • Patent number: 7618548
    Abstract: We have developed an uncomplicated method of plasma etching deeply recessed features such as deep trenches, of at least 5 ?m in depth, in a silicon-containing substrate, in a manner which generates smooth sidewalls, having a roughness of less than about 1 ?m, typically less than about 500 nm, and even more typically between about 100 nm and 20 nm. Features having a sidewall taper angle, relative to an underlying substrate, typically ranges from about 85° to about 92° and exhibiting the smooth sidewalls are produced by the method. In one embodiment, a stabilizing etchant species is used constantly during the plasma etch process, while at least one other etchant species and at least one polymer depositing species are applied intermittently, typically periodically, relative to each other. In another embodiment, the stabilizing etchant species is used constantly and a mixture of the other etchant species and polymer depositing species is used intermittently.
    Type: Grant
    Filed: August 29, 2005
    Date of Patent: November 17, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Jeffrey D. Chinn, Michael Rattner, Nicholas Pornsin-Sirirak, Yanping Li
  • Patent number: 7619735
    Abstract: A method for optical inspection of a surface includes selecting an apodization scheme in response to a characteristic of the surface, and applying an apodizer to apodize a beam of radiation in response to the selected apodization scheme. The apodized beam of radiation is directed to impinge on the surface, whereby a plurality of rays are scattered from the surface, and at least one of the scattered rays is detected, typically in order to detect a defect on the surface.
    Type: Grant
    Filed: January 14, 2003
    Date of Patent: November 17, 2009
    Assignee: Applied Materials, Israel, Ltd.
    Inventor: Erel Milshtein
  • Patent number: 7618516
    Abstract: The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a bottom wall. The step is formed upward and outward from the lower outer wall and inward and downward from the upper outer wall. The annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.
    Type: Grant
    Filed: May 3, 2006
    Date of Patent: November 17, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Kallol Bera, Daniel Hoffman, Yan Ye, Michael Kutney, Douglas A. Buchberger
  • Patent number: 7618769
    Abstract: A method of fabricating a process chamber component having a textured surface includes applying a resist layer on an underlying surface of the component. A predetermined pattern of apertures is formed in the resist layer that exposes the underlying surface of the component. The underlying surface is etched through the apertures in the resist layer to form a textured surface having raised features with top corners. The resist layer is removed, and a treatment step is performed to form top corners that are rounded. In another method, the textured surface is formed by providing a patterned mask having apertures above the surface of the component. A material is sprayed through the apertures in the patterned mask and onto the surface to form a textured surface with raised features having the material.
    Type: Grant
    Filed: June 7, 2004
    Date of Patent: November 17, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Karl Brueckner, Brian West, Hong Wang
  • Patent number: 7620932
    Abstract: A method for generating a simulated aerial image of a mask projected by an optical system includes determining a coherence characteristic of the optical system. A coherent decomposition of the optical system is computed based on the coherence characteristic. The decomposition includes a series of expansion functions having angular and radial components that are expressed as explicit functions. The expansion functions are convolved with a transmission function of the mask in order to generate the simulated aerial image.
    Type: Grant
    Filed: December 28, 2007
    Date of Patent: November 17, 2009
    Assignee: Applied Materials, Israel, Ltd.
    Inventor: Haim Feldman
  • Patent number: 7618521
    Abstract: A split magnet ring, particularly useful in a magnetron plasma reactor sputter depositing tantalum or tungsten or other barrier metal into a via and also resputter etching the deposited material from the bottom of the via onto the via sidewalls. The magnet ring includes two annular magnet rings composed of the same axial polarity separated by a non-magnetic spacing of at least the axial length of one magnet and associated poles. A small unbalanced magnetrons rotates about the back of the target having an outer pole of the same polarity as the ring magnets surrounding a weaker inner pole of the opposite pole.
    Type: Grant
    Filed: September 2, 2005
    Date of Patent: November 17, 2009
    Assignee: Applied Materials, Inc.
    Inventor: Xinyu Fu
  • Patent number: 7618889
    Abstract: The invention provides methods and apparatuses for fabricating a dual damascene structure on a substrate. First, trench lithography and trench patterning are performed on the surface of a substrate to etch a low-k dielectric material layer to a desired etch depth to form a trench prior to forming of a via. The trenches can be filled with an organic fill material and a dielectric hard mask layer can be deposited. Then, via lithography and via resist pattering are performed. Thereafter, the dielectric hard mask and the organic fill material are sequentially etched to form vias on the surface of the substrate, where the trenches are protected by the organic fill material from being etched. A bottom etch stop layer on the bottom of the vias is then etched and the organic fill material is striped. As a result, the invention provides good patterned profiles of the via and trench openings of a dual damascene structure.
    Type: Grant
    Filed: July 18, 2006
    Date of Patent: November 17, 2009
    Assignee: Applied Materials, Inc.
    Inventor: Mehul Naik
  • Patent number: 7619203
    Abstract: A system and method for inspecting an article, the system includes a spatial filter that is shaped such as to direct output beams towards predefined locations and an optical beam directing entity, for directing the multiple output beams toward multiple detector arrays. The method includes spatially filtering multiple input light beams to provide substantially aberration free output light beams; and directing the multiple output beams by an optical beam directing entity, toward multiple detector arrays.
    Type: Grant
    Filed: December 19, 2007
    Date of Patent: November 17, 2009
    Assignee: Applied Materials, Israel, Ltd.
    Inventors: Emanuel Elyasaf, Steven R. Rogers
  • Patent number: 7618893
    Abstract: Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical valor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber.
    Type: Grant
    Filed: March 4, 2008
    Date of Patent: November 17, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Xinyu Fu, Keyvan Kashefizadeh, Ashish Subhash Bodke, Winsor Lam, Yiochiro Tanaka, Wonwoo Kim
  • Patent number: 7620511
    Abstract: Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model. In yet another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, measuring current and voltage for waveforms coupled to the plasma and having at least two different frequencies, and determining ion mass of a plasma from model and the measured current and voltage of the waveforms.
    Type: Grant
    Filed: June 5, 2007
    Date of Patent: November 17, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Steven C. Shannon, Daniel J. Hoffman, Jeremiah T. P. Pender, Tarreg Mawari
  • Publication number: 20090280628
    Abstract: In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.
    Type: Application
    Filed: July 15, 2009
    Publication date: November 12, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Manoj Vellaikal, Kartik Santhanam, Yen B. Ta, Martin A. Hilkene, Matthew D. Scotney-Castle, Canfeng Lai, Peter I. Porshnev, Majeed A. Foad
  • Publication number: 20090282296
    Abstract: An importance factor generator system for providing an overall importance factor to be used in normalizing variables for multivariate modeling. An importance factor generator system assigns a sensor importance factor (IF) to a sensor, where the sensor IF indicates the importance of the sensor relative to other sensors. The importance factor generator system assigns a recipe step IF to a recipe step, where the recipe step IF indicates the importance of the recipe step relative to other recipe steps. The importance factor generator system can calculate an overall IF using the sensor IF and recipe step IF and provide the overall IF to be used for normalizing variables for multivariate modeling results. The importance factor generator system can display the overall IF in a graphical user interface (GUI).
    Type: Application
    Filed: February 9, 2009
    Publication date: November 12, 2009
    Applicant: Applied Materials, Inc.
    Inventor: Y. SEAN LIN