Abstract: A method and apparatus for generating a plasma by inductively coupling electromagnetic energy into the plasma. In one embodiment, first and second antenna coils are disposed about the circumference of the plasma containment area. The first and second antenna coils are relatively spaced along the longitudinal axis of the plasma containment area. A current is generated in the first and second antenna coils. A phase shift regulating network establishes a difference between the phase of the current in the first antenna and the phase of the current in the second antenna. The phase difference corresponds to the phase difference required to launch a helicon wave in the plasma. In a second embodiment, a chamber shield is made of a conductive material and is coupled to the RF source such that the shield functions as an RF antenna. The shield may be coupled in series to a coil surrounding the shield to increase the resultant flux density.

Abstract: A process chamber 15 for processing a substrate 30, such as a semiconductor wafer, comprises a support 20 having a surface 25 for supporting the substrate 30. A gas distributor 50 in the chamber comprises a gas manifold 110 comprising at least one insert 140 having an orifice 115 for passing gas from the gas manifold 110 into the process chamber 15. Preferably, the gas manifold 110 extends about a perimeter 130 of the substrate 30 and comprises a plurality of inserts 140 made from dielectric material.

Abstract: A novel apparatus and method of making the apparatus for supporting a substrate during processing. A base defining grooves at a substrate support location is described. Grooves are provided to catch wear particles from the substrate caused by friction during relative movement between the substrate and the support. A plurality of substrate support locations can be provided on the base surface. The base surface preferably comprises an annulus with substrate support locations spaced circumferentially around the annulus. Protrusions may be provided at substrate support locations. The protrusions define contact surfaces on which grooves can be formed.

Abstract: A method of etching an electrode layer (e.g., a platinum electrode layer or an iridium electrode layer) disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.3 &mgr;m and having a profile equal to or greater than about 85°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising oxygen and/or chlorine, argon and a gas selected from the group consisting of BCl3, HBr, HCl and mixtures thereof. A semiconductor device having a substrate and a plurality of electrodes supported by the substrate. The electrodes have a dimension (e.g., a width) which include a value equal to or less than about 0.3 &mgr;m and a profile equal to or greater than about 85°.

Abstract: A method of processing a substrate 25 comprises placing the substrate 25 in a process zone and introducing process gas into the process zone through a gas distributor 35 through which energized gas may be introduced into the process zone. The method also comprises detecting radiation transmitted through the gas distributor 25, which may comprise a monocrystalline material portion. In another version, the gas distributor 25 comprises a thermal expansion isolator.

Abstract: An apparatus and method for clamping and heating a wafer without using moving parts and without exposing the wafer to external stress is provided. A high backside wafer pressure which provides efficient heat transfer from a heated substrate support to the wafer is offset by a high frontside wafer pressure higher than or lower than the backside wafer pressure. The high frontside pressure reduces wafer stress by providing a uniform frontside/backside pressure and presses the wafer against the heated substrate support. A continuous gas purge for providing a viscous flow across the wafer to carry away desorbed contaminants, and frontside heating elements for improving desorption are provided.

Abstract: A polishing pad for use in a chemical mechanical polishing system is provided. The pad is mounted to a rotatable platen and comprises a polishing surface and a deflection surface which provides a desired degree of rigidity and compliance to the pad when brought into contact with a substrate. The deflection surface may comprise one or more passageways extending through the pad which vent to atmosphere. In one embodiment, the deflection area defines a raised area and a recessed area. The raised area provides a mounting surface for the platen while the recessed area allows for compliance of the pad. In another embodiment, the deflection area comprises a plurality of channels defining a plurality of slanted protrusions. The channels may be non-intersecting such that the slanted protrusions are elongated portions disposed on the pad. Alternatively, the channels may be intersecting such that the slanted protrusions are isolated from one another and are disposed on the pad in spaced relation.

Abstract: A selective Damascene chemical mechanical polishing (CMP) technique is used to planarize a semiconductor device to remove surface topography. The semiconductor device includes a semiconductor layer formed on a substrate, an insulating layer formed over the semiconductor layer and patterned to expose a portion of the semiconductor layer, a barrier layer formed over the insulating layer and the exposed portion of the semiconductor layer, and an electrically conductive layer formed over the barrier layer. The semiconductor device is pressed against a first rotating polishing pad that has no embedded abrasive particles to remove a portion of the conductive layer that overlies both the barrier layer and the insulating layer. The semiconductor device is then pressed against a second rotating polishing pad that has embedded abrasive particles to expose a portion of the barrier layer that overlies the insulating layer.

Abstract: A pressure controlled substrate processing chamber comprising a pressure control ring and a throttling ridge. The pressure control ring is movably disposed proximate the throttling ridge to define a variable flow orifice. The pressure control ring is translated by a ring actuator in response to pressure information retrieved from the processing chamber. The translation of the pressure control ring causes the size of the orifice to change, thus inducing a pressure change within the chamber.

Abstract: The invention provides an apparatus and a method for achieving reliable, consistent metal electroplating or electrochemical deposition onto semiconductor substrates. More particularly, the invention provides uniform and void-free deposition of metal onto metal seeded semiconductor substrates having sub-micron, high aspect ratio features. The invention provides an electrochemical deposition cell comprising a substrate holder, a cathode electrically contacting a substrate plating surface, an electrolyte container having an electrolyte inlet, an electrolyte outlet and an opening adapted to receive a substrate plating surface and an anode electrically connect to an electrolyte. Preferably, a vibrator is attached to the substrate holder to vibrate the substrate in at least one direction, and an auxiliary electrode is disposed adjacent the electrolyte outlet to provide uniform deposition across the substrate surface.

Abstract: A blade assembly for a mechanical wafer handling system. The assembly includes an elongated planar member having a central region, wherein the central region has a first array of openings and a second array of openings, the openings of the first array being arranged substantially symmetrically to the openings of the second array on opposing sides of a central longitudinal axis extending along the length of the planar member and passing through a center point of the central region. The openings in the first array are arranged substantially symmetrically with respect to a perpendicular axis extending along the width of the elongated planar member and passing through a center point of the central region. The openings in the second array are also arranged substantially symmetrically with respect to the perpendicular axis. The assembly also includes a wrist with a wrist upper cap and a wrist lower cap.

Abstract: A method for improving the reflow characteristics of a BPSG film. According to the method, a fluorine- or other halogen-doped BPSG layer is deposited over a substrate and reflowed using a rapid thermal pulse (RTP) method. The use of such an RTP reflow method results in superior reflow characteristics as compared to a 20-40 minute conventional furnace reflow process. The inventors discovered that reflowing FBPSG films in a conventional furnace may result in the highly mobile fluorine atoms diffusing from the film prior to completion of the anneal. Thus, the FBPSG layer loses the improved reflow characteristics provided by the incorporation of fluorine into the film. The RTP reflow reflows the film in a minimal amount of time (e.g., 10-90 seconds depending on the temperature used to reflow the layer and the degree of planarization required among other factors).

Abstract: The present invention recognizes that reactions between processing liquids is a major source of residue which clogs gas delivery systems. To avoid reactions between or among vaporized processing liquids, an inventive gas delivery system provides parallel delivery of vaporized processing liquids. The gas delivery system may be configured using any conventional vaporizing mechanism such as bubblers or injection valves. Preferably, liquid precursors TEPO, TEOS and TEB are vaporized in parallel within three injection valves, the vaporized processing liquids then are flowed into a common line and delivered to a chemical vapor deposition chamber for processing semiconductor wafers. In the unlikely event the line becomes clogged, the line can be easily replaced. Most preferably a single source of carrier gas controlled by a single mass flow controller supplies carrier gas to all three injection valves.

Abstract: The present invention provides a method of depositing a carbon doped silicon oxide film having a low dielectric constant (k). The concentration of oxygen is controlled to produce soft plasma conditions inside the chamber while a precursor gas is diverted through a bypass to stabilize the precursor gas flow prior to routing the precursor into the chamber and using a back to back plasma deposition scheme.

Abstract: A method of deposition for W or TiW on a silicon wafer in a physical vapor deposition chamber equipped with a clamping ring without incurring arcing problem between the wafer and the clamping ring by utilizing a novel two-step high-pressure/low-pressure process in which a first depositing step is carried out at a relatively high pressure above 11 mTorr so as to form an electrical bridge between the wafer and the clamping ring and a second depositing step is carried out at a lower pressure so as to form a high-quality conductive film.

Abstract: A vacuum chuck is disclosed which has nipples as support structure and for vacuum delivery. In the preferred embodiment, two types of nipples are used: “plain” nipples which provide only support and vacuum nipples which provide support and deliver vacuum to retain the wafer on the chuck. The contact surface of the plain nipples is made smaller than that of the vacuum nipples. The chuck is secured to a stage using special supports which have limited flexibility in two axis with respect to the chuck, so as to prevent warping the chuck. Special vacuum nipples are disclosed which do not deliver vacuum unless the wafer exerts sufficient predetermined pressure on the nipple. The chuck is designed to hold both 200 mm and 300 mm wafers.

Abstract: A method and apparatus for fabricating a wafer spacing mask on a workpiece support chuck. Such apparatus is a central body containing a plurality of apertures that is positioned atop the workpiece support chuck and an outer ring shaped body positioned on a flange of the workpiece support chuck while material is deposited onto the apparatus and through the apertures onto chuck. Upon completion of the deposition process, the central body and ring shaped body are removed from the workpiece support chuck leaving deposits of the material to form the wafer spacing mask.

Abstract: In a power control apparatus for controlling power supply of an ion source having an indirectly headed cathode, the cathode bias power supply which provides a bias potential between the filament and cathode has an output that is effected by changes in impedance of the electron flow in the region between the filament and the cathode. Such impedance changes can arise due to changes in the chemistry of materials in this region, changes in gas pressure or physical changes, for example. A bias supply controller in the power control apparatus maintains the output power of the cathode bias power supply unit at a desired level, thus not effected by changes in impedance of the electron flow between the filament and the indirectly heated cathode.

Abstract: Apparatus for retaining a workpiece on a workpiece support and method for manufacturing same. The apparatus contains an adhesive layer, an insulating layer made of a base material having a first resistivity, an electrode layer, a hybrid/adhesive layer and a workpiece support layer made of a base material and a dopant, the dopant having a second resistivity wherein a resistivity of the resultant workpiece support layer is lower than the first resistivity. The multi-resistivity layers establish a Johnsen-Rahbek effect for electrostatic chucking while not unduly compromising chuck strength or longevity. The method consists of the steps of disposing an adhesive layer, disposing an insulating layer, disposing an electrode layer, disposing a hybrid/adhesive layer, disposing a workpiece support layer, curing the layers and forming a plurality of grooves in the workpiece support layer.

Abstract: The present invention discloses a system that provides for electroless deposition performed in-situ with an electroplating process to minimize oxidation and other contaminants prior to the electroplating process. The system allows the substrate to be transferred from the electroless deposition process to the electroplating process with a protective coating to also minimize oxidation. The system generally includes a mainframe having a mainframe substrate transfer robot, a loading station disposed in connection with the mainframe, one or more processing facilities disposed in connection with the mainframe, an electroless supply fluidly connected to the one or more processing applicators and optionally includes a spin-rinse-dry (SRD) station, a rapid thermal anneal chamber and a system controller for controlling the deposition processes and the components of the electro-chemical deposition system.