Abstract: A method and apparatus to prevent charging of a substrate, retained by an electrostatic chuck in a plasma chamber, during ignition of a plasma. The method deactivates a voltage to the chuck electrodes (or other conductive element in a substrate support pedestal) and allows the chuck electrodes to float during ignition of the plasma. The method activates the chuck electrodes again following the ignition of the plasma.

Abstract: A carrier head for a chemical mechanical polishing apparatus has a base, a flexible membrane extending beneath the base to define a pressurizable chamber, a retaining ring, and a spacer ring. At least one of the retaining ring and the spacer includes a projection or an indentation positioned adjacent a portion of the membrane that extends over the spacer, so that the pressure applied at a perimeter of the first membrane portion differs from the pressure applied in center of the first membrane portion.

Abstract: A chemical mechanical polishing system is provided having a buffer station disposed therein or adjacent thereto. The buffer station includes two or more substrate supports for supporting two or more substrates adjacent to an inspection station. The two or more substrate supports are mounted on a mounting plate which is connected to an actuator for moving a pair of substrate supports laterally towards or away from each other over the inspection station.

Abstract: The present disclosure pertains to our discovery that a particular sequence of processing steps will lead to the formation of a rounded top corner on a trench formed in a semiconductor substrate.

Abstract: An air amplifier device has a body with two pieces which fit together and have an inner wall defining a generally cylindrical cavity with a center axis and with an entrance opening at its upper end and an exit opening at its other end. The two pieces have respective shoulders which abut to index the pieces in precise relationship radially, axially, and longitudinally. A pair of circular lips in the inner wall near the entrance opening form a venturi jet air opening through the inner wall to direct a controlled flow of air from a supply of air down into the cylindrical cavity. The lips are uniformly parallel with each other and concentric with the center axis, are closely and uniformly spaced apart for 360 degrees around their lengths and are two circular edges of the respective pieces, and are indexed to the respective shoulders of the pieces such that when the pieces are assembled the jet air opening is uniform within a fraction of a thousandth of an inch.

Abstract: The present invention is about a method for filling an opening in an insulating layer in a fast and highly reliable way and can be used to fill openings such as trenches and via holes simultaneously. This method is based on the principle of reaction enhanced wetting and simultaneous seed layer formation. The idea is, in contrast to trying to avoid the TiAl3 formation, to use this reaction to its advantage for the creation of an ultra-thin continuous Al-containing seed layer. The latter allows a bottom to top fill during the subsequent Al-containing metal deposition. As a consequence, the filling process proceeds much faster and is production worthy.

Abstract: A dual damascene technique that forms a complete via in a single step. Specifically, the method deposits a first insulator layer upon a substrate, an etch stop layer over the first insulator layer, and a second insulator layer atop the etch stop layer. A via mask is then formed by applying a photoresist which is developed and patterned according to the locations of the dimensions of the ultimate via or vias. Thereafter, the first insulator layer, the etch stop layer and the second insulator layer may be etched in a single step, for example, using a reactive ion etch. The hole that is formed through these three layers has the diameter of the ultimate via. Thereafter, a trench is masked and etched into the second insulator layer. The trench etch is stopped by the etch stop layer. The via and trench are metallized to form an interconnect structure. The technique can be repeated to create a multi-level interconnect structure.

Abstract: The present invention is an improved semiconductor substrate processing apparatus which includes a processing chamber having a first member, a second member and a processing region; a vacuum tight seal between said first and said second members that enables a pressure controlled environment within said processing region; and a barrier between said first and second members which separates said seal from said processing region, said barrier being substantially non-reactive with processes conducted in said processing region.

Abstract: A chemical mechanical polishing apparatus has a rotatable platen, a generally linear polishing sheet having an exposed portion extending over a top surface of the platen for polishing the substrate, and a drive mechanism to incrementally advance the polishing sheet in a linear direction across a top surface of the platen. The polishing sheet is releasably secured to the platen to rotate with the platen, and it has a width greater than a diameter of the substrate.

Abstract: A sensor device, for diagnosing a processing system, generally includes a support platform and one or more sensors mounted on the support platform. The sensor senses a condition, such as direction or inclination or acceleration in one or two axes, of the sensor device and outputs a signal indicative thereof, which is then sent to a transmitter, also mounted to the support platform, for wireless transmission of the signal to a receiver mounted on or near the processing system. The support platform generally has physical characteristics, such as size, profile height, mass, flexibility and/or strength, substantially similar to those of the substrates that are to be processed in the processing system, so the sensor device can be transferred through the processing system in a manner similar to the manner in which production substrates are transferred through the processing system.

Abstract: A carrier head for a chemical mechanical polishing system includes a substrate sensing mechanism. The carrier head includes a base and a flexible member connected to the base to define a chamber. A lower surface of the flexible member provides a substrate receiving surface. The substrate sensing mechanism includes a sensor to measure a pressure in the chamber and generate an output signal representative thereof, and a processor configured to indicate whether the substrate is attached to the substrate receiving surface in response to the output signal.

Abstract: An apparatus for removing an undesirable gas in a processing chamber includes one or more getter materials disposed between a process gas inlet and a substrate support member in the processing chamber, and one or more temperature control elements disposed in thermal communication with the one or more getter materials. Preferably, a controller is connected to the one or more temperature control elements to regulate the temperature of the one or more getter materials, and a gas analyzer is disposed within the processing chamber to provide signals to the controller and indicate the presence of undesirable gases. Another aspect of the invention provides a method for removing a gas from a processing chamber comprising pumping the gas using a getter material disposed between a process gas inlet and a substrate support member in the processing chamber, wherein the getter material is activated by a temperature control element disposed in thermal communication with the getter material.

Abstract: Disclosed is a method of making an anodized aluminum susceptor capable of withstanding an elevated temperature of 590° C., or a temperature as high as 475° C. in the presence of an NF3 plasma, without peeling or cracking, which preferably comprises selecting a high purity or low magnesium aluminum alloy, roughening the surface of the alloy, and then anodizing the surface roughened alloy in an electrolyte comprising an organic acid to form the desired anodized aluminum oxide coating thereon. Further, the invention comprises a high purity or low magnesium aluminum alloy susceptor and an organic acid anodic coating thereon highly resistant to spalling or cracking at elevated temperatures.

Abstract: Configurations within the CMP carrier head to maintain a constant contact area through which a downward pressure can be applied and distributed to the substrate for ensuring the force pressing the substrate against the pad will remain steady for each application of pressure, and for repeated application of pressure over time.

Abstract: A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner surfaces of the chamber prior to utilizing the chamber for the deposition of such material. The protective layer is replenished following each two-stage cleaning.

Abstract: A chemical mechanical polishing system comprising a moving polishing pad and an ultrasonic conditioning head. The head is positioned in close facing relationship to the pad surface and agitates a liquid on the rotating pad surface at an appropriate frequency and sufficient amplitude to produce cavitation of the slurry in the vicinity of the pad surface. The action of cavitational collapse vigorously conditions the pad, driving out contaminants and re-texturizing the pad.

Abstract: A polishing pad for use in a chemical mechanical polishing system is provided. The pad comprises a patterned surface having slurry distribution/retaining grooves formed therein. The slurry distribution/retaining grooves include a uniform or random pattern of non-continuous or obstructed groove segments adapted to inhibit slurry or other fluids from flowing off of the pad during operation.

Abstract: A chemical mechanical polishing apparatus has a first polishing sheet movable in a first linear direction, and a second polishing sheet movable in a second linear direction. The first and second polishing sheets are positioned in a parallel and coplanar arrangement to contact a surface of a substrate during polishing.

Abstract: A chemical mechanical polishing apparatus includes a rotatable carousel and multiple carrier head assemblies coupled to the carousel. Each carrier head assembly includes multiple carrier heads each of which can hold a single substrate. The apparatus includes multiple substrate processing stations separated from one another in substantially equal angular intervals. The carrier head assemblies can be positioned in angular alignment with the stations and can be rotated from one station to another station. At least one polishing station includes a fixed abrasive sheet and a fluid bearing surface that provides an upward pressure against the lower surface of the polishing sheet. The carrier head assembly is positioned so that the substrates are in angular alignment with the fluid bearing disposed below the polishing sheet, and the substrates are brought into contact with the polishing sheet.

Abstract: The invention is embodied in a method of processing a semiconductor workpiece in a plasma reactor chamber, including supplying a polymer and etchant precursor gas containing at least carbon and fluorine into the chamber at a first flow rate sufficient of itself to maintain a gas pressure in the chamber in a low pressure range below about 20 mT, supplying a relatively non-reactive gas into the chamber at second flow rate sufficient about one half or more of the total gas flow rate into the chamber, in combination with the first flow rate of the precursor gas, to maintain the gas pressure in the chamber in a high pressure range above 20 mT, and applying plasma source power into the chamber to form a high ion density plasma having an ion density in excess of 1010 ions per cubic centimeter.