Abstract: An adjusting method of a camera module, a lens position control device, a control device of a linear movement device, and a controlling method of the same are provided in a state of the cameral module in which an imaging element and an actuator are combined. The camera module includes a position sensor (53) that detects a position of a lens (50) to output a detection position signal, a storage unit (541) that stores and rewrites a position code value corresponding to the position of the lens, a target position signal generation unit (542) that outputs a target position signal based on the position code value and the target position code value, and a control unit (543) that generates a control signal based on the target position signal and the detection position signal.

Abstract: A demodulator includes: a demodulation section that outputs a demodulated signal demodulated from a modulated signal; an integration section 60a that integrates the demodulated signal; a zone detection section 60b that detects a replacement target zone in the demodulated signal based on an integrated signal output by the integration section; and a replacement section 60c that replaces a signal of the replacement target zone in the demodulated signal with a replacement target signal. A noise can be removed by integrating the demodulated signal by the integration section, and detecting a replacement target zone in the demodulated signal by the zone detection section based on the integrated signal.

Abstract: To more improve detection accuracy of a magnetic sensor. A magnetic sensor includes a substrate; an element part in which a free layer, a non-magnetic layer, and a pinned layer are stacked on the substrate; and a magnetic flux concentrator, wherein an area of the free layer is larger than an area of the pinned layer in a top view, and the free layer and the magnetic flux concentrator have a first overlap region in which the free layer and the magnetic flux concentrator at least partially overlap in the top view.

Abstract: The state of an object such as a presence or absence of the object in a sensor visual field is detected with accuracy. For this end, a DC output Sdc that is a direct current component of a temperature sensor output value S is operated. Based on this, a fluctuation level representing whether a fluctuation is caused by a user or someone else who passes by is acquired. When the DC output Sdc is lower than a DC output threshold THdc, an absence determination counter is incremented when the fluctuation is not caused by either the user or the someone else who passes by, and the state of absence is determined when the absence determination counter reaches the upper limit. When the fluctuation is caused by either the user or someone else who passes by, the absence determination counter is reset.

Abstract: A current sensor includes: a conductor through which a current to be measured flows; magnetoelectric conversion elements disposed near the conductor; and an isolating member for supporting the magnetoelectric conversion elements, and the conductor is disposed so as not to contact with the isolating member and not to support the isolating member.

Abstract: PROBLEM TO BE SOLVED: To reduce an influence on an optical device caused by stress variation on a resin sealing body due to an environmental change and similar change. SOLUTION: An optical device includes a substrate 11, a semiconductor lamination portion formed on the substrate 11 and configured to receive or emit a light, a protective layer 3 that has a shape to cover an entire surface of the semiconductor lamination portion, a mold resin 6 configured to seal the protective layer 3 and the substrate 11 excluding a surface of the substrate 11 on an opposite side of a surface on which the semiconductor lamination portion is formed. The light is entered or emitted from a side of the substrate 11, and the mold resin 6 includes a through hole 61 configured to pass through from a top surface of the mold resin 6 to the protective layer 3. A deformation of the mold resin 6 is reduced by the protective layer 3 and the through hole 61.

Abstract: To reduce a 1/f noise of an insulated gate field effect transistor. A semiconductor device 1 includes: a well region 5 provided on a surface layer of a semiconductor substrate 2; a source region 14S and a drain region 15D disposed to be distant from each other on the surface layer of the well region 5; a channel region 6 provided between the source region 14S and the drain region 15D; and a gate electrode 8 provided over the channel region 6 with a gate insulator 7 interposed therebetween. A gate length of the gate electrode 8 is 1.5 ?m or less, the channel region 6 includes indium as a channel impurity, a distance between a surface of the channel region 6 and a concentration peak position of the channel impurity is 20 nm to 70 nm, and a concentration of the channel impurity gradually decreases in a direction from the concentration peak position of the channel impurity to the surface of the channel region.

Abstract: To provide a nonvolatile storage element capable of being formed by an ordinary CMOS process using single layer polysilicon without requiring exclusive forming process and a reference voltage generation circuit with high versatility and high precision. A reference voltage generation circuit includes nonvolatile storage elements formed of single layer polysilicon. The nonvolatile storage elements each include a MOS transistor including a floating gate, a MOS transistor including a floating gate, and a MOS transistor including a floating gate.

Abstract: An object of the present invention is to provide a semiconductor device and a manufacturing method thereof that may achieve low power consumption in a digital circuit and reduce influence of noise in an analog circuit. The manufacturing method of the semiconductor device includes a first source/drain forming step of forming a first source region and a first drain region by implanting impurities of a second conductivity type into a digital side second conductivity type impurity layer using a gate electrode and a sidewall as a mask and a second drain/source forming step of forming a second source region and a second drain region by implanting impurities of the second conductivity type into an analog side second conductivity type impurity layer using a gate electrode and a sidewall as a mask more shallowly than the impurities of the second conductivity type implanted in the first source/drain forming step.

Abstract: A hall element is provided to suppress fluctuation in a Hall output voltage of the hall element which is generated due to a fluctuation in stress. The hall element may be formed to include a substrate, a magnetosensitive portion formed on the substrate, an insulating film formed on the magnetosensitive portion, four conductive portions (electrode portions and contact portions) which are formed on the insulating film, electrically connected to the magnetosensitive portion through the insulating film, and disposed at positions serving as vertexes of a quadrangle, and ball portions electrically connected to the conductive portions, and at least one ball portion is disposed on a diagonal line of the quadrangle formed by a region surrounded by the four conductive portions and above a portion where the conductive portion and the insulating film are in contact with each other.

Abstract: A hall element is provided to suppress variations in a hall output voltage of the hall element due to a stacked structure of an electrode portion, an insulating film, and a magnetosensitive portion. The hall element may include a substrate, a magnetosensitive portion formed on the substrate, an insulating film formed on the magnetosensitive portion, electrode portions formed on the insulating film, and contact portions electrically connecting the electrode portions and the magnetosensitive portion to each other through the insulating film, in which the entire region surrounded by the contact portions is included in the region of the magnetosensitive portion, and the proportion of regions extending with the corresponding contact portions of the electrode portions as reference points is set to be equal to or less than a predetermined value in a quadrangle formed by the region surrounded by the contact portions.

Abstract: A small-size reliable gas sensor that can reduce a measurement error can be provided. The gas sensor includes: a first light source (20); a first sensor unit (31) and a second sensor unit (32) disposed to receive light output from the first light source (20); a first substrate (41) having a first principal surface (411) on which the first light source (20) and the first sensor unit (31) are provided; and a second substrate (42) having a first principal surface (422) on which the second sensor unit (32) is provided. The first sensor unit (31) is disposed at a location where light output from the first light source (20) and reflected on the second principal surface (412) strikes the first principal surface (422) of the first substrate (41).

Abstract: An amplifier circuit includes a converter configured to convert a predefined physical quantity to a resistance value, and the resistance value converted by the converter is converted to a voltage value and then amplified. The converter includes variable resistance sensors of piezoresistance elements. A bias unit is configured to determine a bias current of the converter, and includes bias resistances. An operation amplifier unit receives, as input signals, output signals from the bias unit and the converter, and includes feedback resistances respectively connected to input and output ends of a first operational amplifier. The first operational amplifier is a whole differential operational amplifier including a common-mode feedback circuit.

Abstract: A light receiving device including: a light receiving element configured to receive at least a portion of light incident from an outside and output an output signal corresponding to amount of received light; a molded resin portion configured to seal at least a portion of the light receiving element; a temperature information acquiring unit configured to acquire temperature information; a humidity information calculating unit configured to calculate humidity information, based on information relating to at least either electrical characteristics or optical characteristics of the light receiving element and the temperature information; and a compensating unit configured to compensate the output signal, based on the temperature information and the humidity information.

Abstract: A light emitting device including: a light emitting element; a molded resin portion configured to seal at least a portion of the light emitting element; a temperature information acquiring unit configured to acquire temperature information; a humidity information calculating unit configured to calculate humidity information, based on information relating to at least either electrical characteristics or optical characteristics of the light emitting element and the temperature information; and a controlling unit configured to control the light emitting element, based on the temperature information and the humidity information.

Abstract: The surrounding environment where an electronic apparatus is placed is detected according to external sounds, and therefore it is difficult to accurately switch the output of a ring-tone. A control apparatus controls the sound generated by the electronic device. The control apparatus includes a sound producing section that outputs a sound output signal causing a sound output section to generate the sound, a sound acquiring section that acquires a sound input signal generated from external sound, and an adjusting section that adjusts the sound output signal or the output of an output device according to the sound input signal acquired in a state where the sound is being generated.

Abstract: Alight receiving device is equipped with a first light receiving element which outputs a first output signal corresponding to an amount of received light, a temperature information acquisition unit which acquires temperature information of the first light receiving element, a generation unit which generates compensating information of the first output signal, based on first output signals and temperature information when power is supplied to the first light receiving element in a plurality of power supply conditions and stores the same in a storage unit, and a compensation unit which compensates the first output signal, based on the temperature information and the compensating information when the first output signal is output. Thus, even when temperature characteristics of an optical element are varied, the temperature characteristics are compensated highly accurately.

Abstract: The magnetic sensor includes a magnetic flux concentrator member having a length in a direction of a second axis, a first magnetic detector arranged on a negative side of a first axis from the magnetic flux concentrator member and on a positive side of the second axis from a midpoint of the magnetic flux concentrator member in a length direction, a second magnetic detector arranged on a positive side of the first axis from the magnetic flux concentrator member and on the positive side of the second axis from the midpoint of the magnetic flux concentrator member in the length direction, and a third magnetic detector arranged on the negative side of the first axis from the magnetic flux concentrator member and on a negative side of the second axis from the midpoint of the magnetic flux concentrator member in the length direction.

Abstract: Alight receiving device is equipped with a first light receiving element which outputs a first output signal corresponding to an amount of received light, a temperature information acquisition unit which acquires temperature information of the first light receiving element, a generation unit which generates compensating information of the first output signal, based on first output signals and temperature information when power is supplied to the first light receiving element in a plurality of power supply conditions and stores the same in a storage unit, and a compensation unit which compensates the first output signal, based on the temperature information and the compensating information when the first output signal is output. Thus, even when temperature characteristics of an optical element are varied, the temperature characteristics are compensated highly accurately.

Abstract: The present embodiment relates to a Hall electromotive force signal detection circuit. The third switch circuit selects a terminal position for applying a driving current out of four terminals of the third Hall element and switches the terminal position among the first terminal, the second terminal, the fourth terminal, and the third terminal in this order. The fourth switch circuit switches a terminal position for applying the driving current to the terminal in turn, among the first to the fourth terminal of the fourth Hall element, such that this terminal position is different from that selected by the third switch circuit and faces the terminal position for injecting the driving current in the third Hall element. A chopper clock generation circuit supplies a chopper clock signal with different four phases to the third switch circuit and to the fourth switch circuit.