Abstract: The present invention relates to an image stabilizer and a camera module. The image stabilizer for a lens that moves, with respect to an imaging element, in an auto-focus direction and a camera shake direction, includes a first position sensor, a distance signal calculation unit, a target position signal calculation circuit and a drive signal generation unit. A first detection position signal that indicates a position of the lens that moves in the camera shake direction, a second detection position signal that indicates a position of the lens that moves in the auto-focus direction, and an angular velocity signal that indicate an angular velocity when the lens is inclined from the optical axis direction to output a drive signal. A drive unit moves the lens in the camera shake direction depending on the drive signal.

Abstract: Sticking of core layer is suppressed, and deterioration of sensitivity of a sensor is prevented. An optical waveguide (10) includes a substrate (15), a core layer (11), a support, and a protrusion (18). The core layer (11) can transmit light. The support connects at least a portion of the substrate (15) and a portion of the core layer (11) together. The support supports the core layer (11). The protrusion (18) is arranged at a position different from a position of the support in a space between the substrate (15) and the core layer (11). The protrusion (18) has a maximum height at a position deviated from a central position cp of the core layer (11) in a width direction. The protrusion (18) protrudes toward the core layer (11) from the substrate (15).

Abstract: This disclosure provides a highly accurate NDIR gas sensor and a highly accurate optical device even using a simplified optical filter. The NDIR gas sensor and the optical device include: an optical filter having a substrate and a multilayer film on the substrate; and an infrared light emitting and receiving device; where the multilayer film has a structure in which a first layer and a second layer are alternately stacked; the active layer contains AlxIn1-xSb or InAsySb1-y; and the optical filter includes a wavelength range having an average transmittance of 70% or more with a width of 50 nm or more in 2400-6000 nm, and has a maximum transmittance of 5% or more in 6000-8000 nm and an average transmittance of 2% or more and 60% or less in 6000-8000 nm.

Abstract: Disclosed is an infrared light emitting device including: a semiconductor substrate; a first layer formed on the semiconductor substrate and having a first conductivity type; a light emitting layer formed on the first layer; and a second layer formed on the light emitting layer and having a second conductivity type, wherein the first layer includes, in the stated order: a layer containing Alx(1)In1?x(1)Sb; a layer having a film thickness ty(1) in nanometers and containing Aly(1)In1?y(1)Sb; and a layer containing Alx(2)In1?x(2)Sb, where ty(1), x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0<ty(1)?2360×(y(1)?x(j))?240 (0.11?y(1)?x(j)?0.19), 0<ty(1)??1215×(y(1)?x(j))+427 (0.19<y(1)?x(j)?0.33), and 0<x(j)<0.18.

Abstract: A delta-sigma modulator and a delta-sigma converter include an analog amplifying unit to amplify an analog signal and having at least a primary feedback coefficient, a quantizer to quantize an output signal of the analog amplifying unit, a DA converter to perform DA conversion on output of the quantizer and output a feedback signal, an adder-subtractor to input into the analog amplifying unit an analog signal obtained by subtracting the feedback signal from an analog signal input therein, a reset circuit to reset the analog amplifying unit at predetermined periods, and a control circuit to control the analog amplifying unit so that the analog amplifying unit operates as an integrator with the primary feedback coefficient of 1 until a predetermined period elapses after the reset circuit resets the analog amplifying unit and as an amplifier with the primary feedback coefficient of greater than one after the predetermined period has elapsed.

Abstract: A small-size reliable gas sensor that can reduce a measurement error can be provided. The gas sensor includes a first light source; a first sensor unit and a second sensor unit disposed to receive light output from the first light source; a first substrate having a first principal surface on which the first light source and the first sensor unit are provided; and a second substrate having a first principal surface on which the second sensor unit is provided. The first sensor unit is disposed at a location where light output from the first light source and reflected on the second principal surface strikes the first principal surface of the first substrate.

Abstract: An integrated circuit is provided, including an AD converter; a DC-DC converter converting a received first voltage into a second voltage and providing the second voltage as a power supply voltage of the AD converter; a control part controlling the AD converter and the DC-DC converter. The DC-DC converter includes a first switching element; a second switching element having one end coupled to a reference potential and the other end coupled to one end of the first switching element; a coil coupled to a connection point of the two switching elements; and a current detection part detecting a current flowing to the coil. The control part turns off the first switching element and turns on the second switching element, and after the current detected by the current detection part becomes equal to or smaller than a reference current value, turn off the second switching element to operate the AD converter.

Abstract: Provided is an infrared detecting device with high SNR. The infrared detecting device includes: a semiconductor substrate; a first compound semiconductor layer; a light receiving layer formed on the first compound semiconductor layer and containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s); a third compound semiconductor layer; and a second compound semiconductor layer containing at least In, Al, and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), in which the first compound semiconductor layer includes, in the stated order, a first A layer, a first B layer, and a first C layer, each containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), and the proportion(s) of the Al composition or the Al composition and the Ga composition of each layer satisfy a predetermined relation(s).

Abstract: A direct conversion receiver configured to down-convert a received RF signal by using a local signal and demodulate the down-converted signal, the direct conversion receiver including: a power detector unit configured to detect a signal strength of the down-converted signal; a power determinator unit configured to determine whether the signal strength detected by the power detector unit is equal to or smaller than a previously set threshold value; and a local oscillator circuit configured to output, as the local signal, a first local signal when the power determinator unit determines that the signal strength is equal to or smaller than the threshold value, and output, as the local signal, a second local signal set to a frequency obtained by adding a previously set offset frequency to a frequency of the first local signal when the power determinator unit determines that the signal strength is larger than the threshold value.

Abstract: A gas detection apparatus (100) includes a first layer (1) and a second layer (2) disposed opposite the first layer (1) in a predetermined direction (z-axis direction). The first layer (1) includes a light emitter that emits light and a light receiver that receives the light after the light passes through a waveguide. The second layer (2) includes a light input unit of the waveguide opposite the light emitter in the predetermined direction (z-axis direction) and a light output unit of the waveguide opposite the light receiver in the predetermined direction (z-axis direction). The gas detection apparatus (100) can be miniaturized.

Abstract: PROBLEM TO BE SOLVED: To reduce an influence on an optical device caused by stress variation on a resin sealing body due to an environmental change and similar change. SOLUTION: An optical device includes a substrate 11, a semiconductor lamination portion formed on the substrate 11 and configured to receive or emit a light, a protective layer 3 that has a shape to cover an entire surface of the semiconductor lamination portion, a mold resin 6 configured to seal the protective layer 3 and the substrate 11 excluding a surface of the substrate 11 on an opposite side of a surface on which the semiconductor lamination portion is formed. The light is entered or emitted from a side of the substrate 11, and the mold resin 6 includes a through hole 61 configured to pass through from a top surface of the mold resin 6 to the protective layer 3. A deformation of the mold resin 6 is reduced by the protective layer 3 and the through hole 61.

Abstract: A signal processing device according to an embodiment includes a plurality of signal processing units and a pseudo signal generating unit. The plurality of signal processing units are provided in a plurality of reception antennas which receive reflection signals of a transmission signal reflected on an object, and perform signal processing in parallel on beat signals which are generated based on the transmission signal and the reflections signals. The pseudo signal generating unit generates a pseudo signal imitating the beat signal, and inputs the pseudo signal as a target of the signal processing into the plurality of signal processing units in parallel.

Abstract: The object of the present invention is to provide a nonvolatile storage element capable of suppressing retention degradation. A nonvolatile storage element is provided with a semiconductor substrate and a floating gate provided above the semiconductor substrate, in which the floating gate has an area of 30 ?m2 or more.

Abstract: It is desired to even further attempt to stabilize temperature in oscillator such as OCXOs (Oven Controlled Crystal Oscillators). A temperature controlling apparatus is provided. The temperature controlling apparatus includes: a temperature sensor; a power supply circuit that supplies, to a first heater, power corresponding to a difference between a target value and a detected value obtained from the temperature sensor; and a second heater that is provided at a position such that thermal conduction therefrom to the temperature sensor is faster than that from the power supply circuit, and changes power consumption of the second heater according to power consumption of the power supply circuit.

Abstract: A semiconductor device 1 includes: a well region 5 provided on a surface layer of a semiconductor substrate 2; a source region 14S and a drain region 15D disposed to be distant from each other on the surface layer of the well region 5; a channel region 6 provided between the source region 14S and the drain region 15D; and a gate electrode 8 provided over the channel region 6 with a gate insulator 7 interposed therebetween. A gate length of the gate electrode 8 is 1.5 ?m or less, the channel region 6 includes indium as a channel impurity, a distance between a surface of the channel region 6 and a concentration peak position of the channel impurity is 20 nm to 70 nm, and a concentration of the channel impurity gradually decreases in a direction from the concentration peak position of the channel impurity to the surface of the channel region.

Abstract: To provide a nonvolatile storage element capable of being formed by an ordinary CMOS process using single layer polysilicon without requiring exclusive forming process and a reference voltage generation circuit with high versatility and high precision. A reference voltage generation circuit includes nonvolatile storage elements formed of single layer polysilicon. The nonvolatile storage elements each include a MOS transistor including a floating gate, a MOS transistor including a floating gate, and a MOS transistor including a floating gate.

Abstract: A sensor apparatus adjusts output timings of a detection signal and a sensing signal for sensing an abnormality in the detection signal. Provided is a magnetic sensor apparatus comprising a magnetic sensor element, an amplifying section that amplifies and outputs an output of the magnetic sensor element, a plurality of comparing sections that compare the output of the magnetic sensor element or an output of the amplifying section to a threshold value, and a plurality of delaying sections that each delay and output a comparison result output by a corresponding comparing section among the plurality of comparing sections. Also provided is a current sensor apparatus including a current path through which a current serving as a measurement target flows and a magnetic sensor apparatus that is arranged corresponding to the current path and detects a magnetic field generated according to the current serving as the measurement target.

Abstract: An object of the present invention is to provide a semiconductor device and a manufacturing method thereof that may achieve low power consumption in a digital circuit and reduce influence of noise in an analog circuit. The manufacturing method of the semiconductor device includes a first source/drain forming step of forming a first source region and a first drain region by implanting impurities of a second conductivity type into a digital side second conductivity type impurity layer using a gate electrode and a sidewall as a mask and a second drain/source forming step of forming a second source region and a second drain region by implanting impurities of the second conductivity type into an analog side second conductivity type impurity layer using a gate electrode and a sidewall as a mask more shallowly than the impurities of the second conductivity type implanted in the first source/drain forming step.

Abstract: Provided is a magnetic field detection device capable of detecting with a higher accuracy. A magnetic field detection device 1 includes a first magnetic sensor unit 1000a, a second magnetic sensor unit 1000b, a third magnetic sensor unit 1000c and a fourth magnetic sensor unit 1000d. The first and the second magnetic sensor units are disposed side by side so that a sensitive axis directions of the first and the second magnetic sensor units are oriented in a first direction, and the third and the fourth magnetic sensor units are disposed side by side so that the sensitive axis directions of the third and the fourth magnetic sensor units are oriented in a second direction.

Abstract: A hall element is provided to suppress variations in a hall output voltage of the hall element due to a stacked structure of an electrode portion, an insulating film, and a magnetosensitive portion. The hall element may include a substrate, a magnetosensitive portion formed on the substrate, an insulating film formed on the magnetosensitive portion, electrode portions formed on the insulating film, and contact portions electrically connecting the electrode portions and the magnetosensitive portion to each other through the insulating film, in which the entire region surrounded by the contact portions is included in the region of the magnetosensitive portion, and the proportion of regions extending with the corresponding contact portions of the electrode portions as reference points is set to be equal to or less than a predetermined value in a quadrangle formed by the region surrounded by the contact portions.