Abstract: Provided is an infrared detecting device with a high SNR. The infrared detecting device includes: a semiconductor substrate 10; a first layer 21 having a first conductivity type on the semiconductor substrate; a light receiving layer 22 on the first layer; and a second layer 23 having a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure, the light receiving layer contains AlxIn1-xSb (0.05<x<0.18), and at least a part of side surfaces of the mesa structure are covered with a protective layer, and part of the protective layer that is in contact with side surfaces of the light receiving layer is made of silicon nitride.

Abstract: This invention aims at providing a chemical sensor and a detection apparatus each of which can control a threshold voltage and achieve improvement in an electric-charge retention characteristic. A chemical sensor provides: a sensitive portion having a sensitive membrane sensitive to a chemical substance; a transistor having a floating gate and a gate insulating film; and a first potential controlling portion configured to control a potential of the floating gate in accordance with a voltage applied to the sensitive membrane. The first potential controlling portion has: a P-well region connected to the sensitive portion via a wiring line; a control insulating film formed to make contact with the P-well region; and a control floating portion placed at a position where the control floating portion faces the P-well region across the control insulating film, the control floating portion being conductive with the floating gate.

Abstract: The semiconductor device includes a well region disposed in a surface layer of a semiconductor substrate, a source region and a drain region arranged separated from each other in a surface layer of the well region, a channel region disposed between the source region and the drain region, and a gate electrode disposed on the channel region via a gate insulating film containing fluorine, in which concentration of fluorine existing in a first interface, the first interface being an interface of the gate insulating film with the gate electrode, and concentration of fluorine existing in a second interface, the second interface being an interface of the gate insulating film with the channel region, are higher than concentration of fluorine existing in a middle region in the depth direction of the gate insulating film, and fluorine concentration in the first interface is higher than fluorine concentration in the second interface.

Abstract: The present invention provides a current sensor including: a primary conductor through which current to be measured flows; a magnetic sensor which has a magnetosensitive surface and detects magnetic field generated by the current to be measured; a sealing portion sealing the primary conductor and the magnetic sensor; and a plurality of terminals exposed through a side surface of the sealing portion; wherein the primary conductor includes: a first end connected to one of the terminals which is exposed through any one side surface of the sealing portion and through which the current to be measured is input; a second end connected to another one of the terminals exposed through the one side surface and through which the current to be measured is output; and a third end which is connected to one of the terminals exposed through a side surface other than the one side surface.

Abstract: This invention aims at providing a temperature characteristic adjustment circuit capable of adjusting the temperature characteristic to various positive and negative temperature characteristics with an excessively small characteristic variation and capable of suppressing an increase in the chip area and the current consumption with a simple circuit configuration. A temperature characteristic adjustment circuit has a current source having a nonvolatile storage element having a control gate region and a source region and driven by the application of a bias between the control gate region and the source region and an output circuit not having a nonvolatile storage element, in which the temperature dependency of an output signal originating from the temperature dependency of the current amount of a current output from the current source is adjusted by the nonvolatile storage element.

Abstract: The switch circuit includes a MOS transistor one end of which is coupled to a power supply line and to a control terminal of which voltage is input, a switch coupled between the power supply line and one end of the MOS transistor or one end of which is coupled to the other end of the MOS transistor, a MOS transistor coupled between an output terminal and ground potential, and a series-connected switch and constant current source coupled to a connection point between an opposite-side end of the whole series-connected MOS transistor and switch to the power supply line and the control terminal of the MOS transistor and performing adjustment to prevent current from flowing from the MOS transistor to ground potential after the switch turns on until the MOS transistor turns on.

Abstract: A successive approximation ADC includes: a comparator generating a judge signal related to an input analog and a reference signals; a SAR successively generating a register signal including a first and a second bit signals based on the judge signal and generating an AD conversion value of the input analog signal; a thermometer decoder switching different thermometer code conversion rules and converting the first bit signal to thermometer codes corresponding to the different thermometer code conversion rules in one AD conversion cycle; a first and a second DA converters respectively converting the thermometer codes to a first analog signal and the second bit signal to a second analog signal; an average value calculator averaging the AD conversion values by the thermometer codes. Two of the different thermometer codes have values that a high-order bit and a low-order bit groups by dividing total bits of the thermometer code equally are exchanged.

Abstract: A differential amplifier is provided, in which generation of unnecessary harmonic distortion in the differential output signal is suppressed. A common mode feedback circuit increases or decreases operating points of an inverting output terminal and a non-inverting output terminal such that an intermediate voltage of voltages respectively provided to an inverting input terminal and a non-inverting input terminal is consistent with to a reference voltage. Variations in voltage at the inverting input terminal and the non-inverting input terminal are suppressed, variations in electrical properties of elements connected to the input terminals are suppressed. Therefore, it is possible to suppress generation of harmonic distortion in the output signals from the inverting output terminal and the non-inverting output terminal.

Abstract: Provided is a learning processor including a base characteristic acquiring section that acquires base characteristic data indicating a characteristic of a base layer serving as a base on which a film is to be deposited by a film deposition apparatus; a film characteristic acquiring section that acquires film characteristic data indicating a characteristic of the film deposited on the base layer by the film deposition apparatus; and a first learning processing section that performs learning processing of a first model that outputs predicted film characteristic data obtained by predicting a characteristic of a film to be deposited by the film deposition apparatus based on targeted base characteristic data indicating a characteristic of a base layer serving as a target for formation of the film, using learning data that includes the base characteristic data and the film characteristic data.

Abstract: The present invention relates to a hall electromotive force signal detection circuit and a current sensor thereof each of which is able to achieve excellent wide-band characteristics and fast response as well as high accuracy. A difference calculation circuit samples a component synchronous with a chopper clock generated by a chopper clock generation circuit, out of an output voltage signal of a signal amplifier circuit, at a timing obtained from the chopper clock, so as to detect the component. An integrating circuit integrates an output from the difference calculation circuit in the time domain. An output voltage signal from the integrating circuit is fed back to a signal amplifier circuit via a third transconductance element.

Abstract: Deterioration in transient response characteristics of a current sensor may cause overshoot or delay. Thus, it is difficult to achieve good transient response characteristics of a magnetic field. A current sensor is provided, including: a detection unit outputting a signal corresponding to a magnetic field generated by detection current flowing through a current path; a reception unit receiving the signal corresponding to the magnetic field; a filter unit filtering the signal received by the reception unit; and an output unit outputting an output signal indicating the detection current according to the filtered signal, wherein detection gain, as gain of magnetic flux density detected by the detection unit, has a gain fluctuation band that changes with an increase in a frequency of the detection current, and the filter unit has gain that cancels out the change in the detection gain in at least a part of the gain fluctuation band.

Abstract: Provided is a current sensor including a first Hall element and a second Hall element. Provided is a current sensor including a first Hall element; a second Hall element; a primary conductor arranged in a manner to have a current under measurement flow therethrough and to apply magnetic fields under measurement caused by the current under measurement, with different polarities, to the first Hall element and the second Hall element; and a secondary conductor arranged in a manner to have a reference current flow therethrough and to apply reference magnetic fields caused by the reference current, with the same polarity, to the first Hall element and the second Hall element.

Abstract: An optical module that stably operates an optical camera shake correction, an autofocus function and the like even if a temperature change occurs; a driving apparatus including an actuator that changes a relative position between a lens section and an imaging device, a correction section that corrects a driving amount of the actuator according to temperature information showing an ambient temperature of the lens section, and a control section that controls the driving amount of the actuator; a lens unit, a device, a correction method, and a computer readable recording medium are provided.

Abstract: According to the present disclosure, provided is an optical densitometer for measuring a density of a gas or liquid of interest, the optical densitometer comprising: a light source capable of introducing light into a core layer; a detector capable of receiving the light that has propagated through the core layer; and an optical waveguide, the optical waveguide comprising: a substrate; and the core layer comprising a light propagation portion capable of propagating the light in an extending direction of the light propagation portion, and a diffraction grating portion, the diffraction grating portion comprising a diffraction grating region and an extension region connected to the diffraction grating region, and a first optical coupling region included in the extension region and a second optical coupling region included in the light propagation portion being optically coupled with respect to the light propagating through the core layer.

Abstract: A driving control apparatus, a device, an optical module, and a driving control method will be provided, the driving control apparatus including: an acquiring unit to acquire a detection signal depending on a detection result of sensing a position of a driving target object; a driving control unit to generate a driving signal to move the driving target object to a target position based on the detection signal; an oscillation detecting unit to detect oscillation in a signal at a predetermined object point on a signal path from the detection signal to the driving signal; and an oscillation suppressing unit to suppress oscillation of the signal path according to detection of the oscillation.

Abstract: A method for manufacturing a gas concentration calculation device including a housing made of a synthetic resin and configured to include a cylindrical portion including first and second openings, respectively, at axial both ends thereof, and first and second mirrors, respectively, arranged facing each other at the first and second openings to form an optical path of infrared light inside the cylindrical portion. The method includes a step of preparing a precursor including respective sticking-out portions made of a synthetic resin sticking more outward than respective installation positions of first and second mirrors in a cylindrical portion and a step of bonding the first and second mirrors to the respective installation positions by arranging the first and second mirrors, respectively, at the respective installation positions of the precursor and then bending the sticking-out portions while melting with heat to cause them to adhere to the first and second mirrors.

Abstract: This disclosure provides a NDIR gas sensor comprising: an optical filter having a substrate and a multilayer film; and an infrared light emitting and receiving device having a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type; where the multilayer film has a structure in which a first layer and a second layer are alternately stacked; the active layer contains InAsySb1-y (0.1?y?0.2); and the optical filter includes a wavelength range having an average transmittance of 70% or more with a width of 50 nm or more in a wavelength range of 6 ?m to 10 ?m, and has a maximum transmittance of 10% or more in a wavelength range of 12.5 ?m to 20 ?m and an average transmittance of 5% or more and 60% or less in a wavelength range of 12.5 ?m to 20 ?m.

Abstract: A Hall element including a contact is provided. A Hall element is provided, including: a substrate; a magnetosensitive portion formed on the substrate; an insulating film formed on the magnetosensitive portion; and a conductive portion which is formed on the insulating film, extends from a peripheral region of the magnetosensitive portion toward a central region of the magnetosensitive portion, penetrates the insulating film, and is electrically connected to the magnetosensitive portion, wherein when observing a cross section passing through a center of the magnetosensitive portion in plan view and a portion at which the conductive portion is in contact with the magnetosensitive portion, at least a part of the conductive portion extends below the insulating film in the cross section.

Abstract: The object of the present invention is to provide a nonvolatile storage element capable of suppressing retention degradation. A nonvolatile storage element is provided with a semiconductor substrate and a floating gate provided above the semiconductor substrate, in which the floating gate has an area of 30 ?m2 or more.

Abstract: Provided is a magnetic field detection device capable of detecting with a higher accuracy. A magnetic field detection device 1 includes a first magnetic sensor unit 1000a, a second magnetic sensor unit 1000b, a third magnetic sensor unit 1000c and a fourth magnetic sensor unit 1000d. The first and the second magnetic sensor units are disposed side by side so that a sensitive axis directions of the first and the second magnetic sensor units are oriented in a first direction, and the third and the fourth magnetic sensor units are disposed side by side so that the sensitive axis directions of the third and the fourth magnetic sensor units are oriented in a second direction.