Abstract: A piezoresistive pressure sensor includes a substrate and a silicon device layer. The substrate has a cavity. The silicon device layer includes a diaphragm and a support element. A top surface of the diaphragm is connected to a top surface of the support element by one or more side surfaces. A recess of the silicon device layer is defined by the top surface of the diaphragm and the one or more side surfaces. A plurality of piezoresistive regions are on the top surface of the diaphragm, on the one or more side surfaces and on the top surface of the support element. A plurality of conductive regions are on the top surface of the support element. The plurality of conductive regions do not extend to the top surface of the diaphragm. The plurality of piezoresistive regions have a first ion dosage concentration. The plurality of conductive regions have a second ion dosage concentration. The second ion dosage concentration is greater than the first ion dosage concentration.

Abstract: A piezoresistive pressure sensor includes a substrate and a silicon device layer. The substrate has a cavity. The silicon device layer includes a diaphragm and a support element. A top surface of the diaphragm is connected to a top surface of the support element by one or more side surfaces. A recess of the silicon device layer is defined by the top surface of the diaphragm and the one or more side surfaces. A plurality of piezoresistive regions are on the top surface of the diaphragm, on the one or more side surfaces and on the top surface of the support element. A plurality of conductive regions are on the top surface of the support element. The plurality of conductive regions do not extend to the top surface of the diaphragm. The plurality of piezoresistive regions have a first ion dosage concentration. The plurality of conductive regions have a second ion dosage concentration. The second ion dosage concentration is greater than the first ion dosage concentration.

Abstract: An integrated MEMS device is provided. The integrated MEMS device comprises a circuit chip and a device chip. The circuit chip has a patterned first bonding layer disposed thereon, the bonding layer being composed of a conductive material/materials. The device chip has a first structural layer and a second structural layer, the first structural layer being connected to the second structural layer and the first bonding layer of the circuit chip, and being sandwiched between the second structural layer and the circuit chip. A plurality of hermetic spaces are enclosed by the first structural layer, the second structural layer, the first bonding layer and the circuit chip.

Abstract: The present disclosure provides a method for fabricating semiconductor devices having reinforcing elements. The method includes steps of providing a first wafer having a lower electrode layer and an insulation layer; forming a device layer; etching the device layer and the insulation layer to form recesses; etching the device layer to form separation trenches and upper electrodes; forming reinforcing elements; and depositing metal pads. The reinforcing elements strengthen the integration of the upper electrodes and the insulation layer.

Abstract: A diaphragm piezoresistive pressure sensor includes: a base member; a diaphragm including a middle portion and a surrounding portion surrounding the middle portion; a spacer disposed between and cooperating with the base member and the diaphragm to define a cavity thereamong; an inner abutment member disposed in the cavity and spaced apart from the base member by a clearance; and a piezoresistive sensor unit embedded in the diaphragm. The spacer surrounds and is spaced apart from the inner abutment member. At least one of the inner abutment member and the middle portion of the diaphragm defines a chamber therebetween.

Abstract: The present disclosure provides a method for fabricating semiconductor devices having reinforcing elements. The method includes steps of providing a first wafer having a lower electrode layer and an insulation layer; forming a device layer; etching the device layer and the insulation layer to form recesses; etching the device layer to form separation trenches and upper electrodes; forming reinforcing elements; and depositing metal pads. The reinforcing elements strengthen the integration of the upper electrodes and the insulation layer.

Abstract: In a method for fabricating a self-aligned vertical comb drive structure, a multi-layer structure is first formed. The multi-layer structure includes inter-digitated first and second comb structures formed via etching using a first mask layer as a mask. The first comb structure includes a plurality of first comb fingers, each having a first finger portion formed in a first device layer and a second finger portion formed in a second device layer and separated from the first finger portion by a self-aligned pattern on a stop layer. The second comb structure includes a plurality of second comb fingers formed solely in the second device layer. The second finger portions of the first comb fingers are subsequently removed.

Abstract: An integrated MEMS device and its manufacturing method are provided. In the manufacturing method, the sacrificial layer is used to integrate the MEMS wafer and the circuit wafer. The advantage of the present invention comprises preventing films on the circuit wafer from being damaged during process. By the manufacturing method, a mechanically and thermally stable structure material, for example: monocrystalline silicon and polysilicon, can be used. The integrated MEMS device manufactured can also possess the merit of planar top-surface topography with high fill factor. The manufacturing method is especially suitable for manufacturing MEMS array device.

Abstract: The present disclosure provides a method for fabricating semiconductor devices having high-precision gaps. The method includes steps of providing a first wafer; forming two or more regions having various ion dosage concentrations on a first surface of the first wafer; thermally oxidizing the first wafer so as to grow oxide layers with various thicknesses on the first surface of the first wafer; and bonding a second wafer to the thickest oxide layer of the first wafer so as to form one or more gaps.

Abstract: An integrated MEMS device and its manufacturing method are provided. In the manufacturing method, the sacrificial layer is used to integrate the MEMS wafer and the circuit wafer. The advantage of the present invention comprises preventing films on the circuit wafer from being damaged during process. By the manufacturing method, a mechanically and thermally stable structure material, for example: monocrystalline silicon and polysilicon, can be used. The integrated MEMS device manufactured can also possess the merit of planar top-surface topography with high fill factor. The manufacturing method is especially suitable for manufacturing MEMS array device.

Abstract: A substrate bonding method comprises the following steps. Firstly, a first substrate and a second substrate are provided, wherein a surface of the first substrate is covered by a first Ag layer and a surface of the second substrate is covered by a second Ag layer and a metallic layer from bottom to top, wherein the metallic layer comprises a first Sn layer. Secondly, a bonding process is performed by aligning the first and second substrates followed by bringing the metallic layer into contact with the first Ag layer followed by applying a load while heating to a predetermined temperature in order to form Ag3Sn intermetallic compounds. Finally, cool down and remove the load to complete the bonding process.

Abstract: In a method for fabricating a self-aligned vertical comb drive structure, a multi-layer structure is first formed. The multi-layer structure includes inter-digitated first and second comb structures formed via etching using a first mask layer as a mask. The first comb structure includes a plurality of first comb fingers, each having a first finger portion formed in a first device layer and a second finger portion formed in a second device layer and separated from the first finger portion by a self-aligned pattern on a stop layer. The second comb structure includes a plurality of second comb fingers formed solely in the second device layer. The second finger portions of the first comb fingers are subsequently removed.

Abstract: A substrate bonding method comprises the following steps. Firstly, a first substrate and a second substrate are provided, wherein a surface of the first substrate is covered by a first Ag layer and a surface of the second substrate is covered by a second Ag layer and a metallic layer from bottom to top, wherein the metallic layer comprises a first Sn layer. Secondly, a bonding process is performed by aligning the first and second substrates followed by bringing the metallic layer into contact with the first Ag layer followed by applying a load while heating to a predetermined temperature in order to form Ag3Sn intermetallic compounds. Finally, cool down and remove the load to complete the bonding process.

Abstract: A combo transducer includes a base, a proof mass, a membrane unit and a plurality of transducing components. The base is formed with an aperture. The proof mass is disposed in the aperture and has a surface that is formed with a cavity. The membrane unit includes a supporting part connected to the base, a covering part disposed to cover the surface of the proof mass, and a resilient linking part interconnecting the supporting part and the covering part such that the proof mass is movable relative to the base. The transducing components are disposed at the membrane unit. At least one of the transducing components is disposed at the covering part and is registered with the cavity.

Abstract: A method for making micro-electromechanical system devices includes: (a) forming a sacrificial layer on a device wafer; (b) forming a plurality of loop-shaped through-holes in the sacrificial layer so as to form the sacrificial layer into a plurality of enclosed portions; (c) forming a plurality of cover caps on the sacrificial layer such that the cover caps respectively enclose the enclosed portions of the sacrificial layer; (d) forming a device through-hole in each of active units of the device wafer so as to form an active part suspended in each of the active units; and (e) removing the enclosed portions of the sacrificial layer through the device through-holes in the active units of the device wafer.

Abstract: Electrostatically operated micro-optical devices and method of manufacturing such devices is disclosed. In a preferred embodiment, the micro-optical devices using electrostatic comb drive actuators having new spring designs to overcome side instability and exhibit enlarged displacement, having new designs of comb finger electrode shapes to generate larger force output, and having new clip type latch mechanism to control the corresponding device at certain states in an analog manner without electrical power consumption. Based on the proposed optical path and device configurations, integration and assembly of a plurality of reflective micro-mirrors in conjunction with proposed new comb drive actuators is very promising way to provide micro-optical devices to get good optical performance and suitable for multi-channel applications. We also disclose several process techniques to manufacture the micro-optical devices with said electrostatic comb drive actuator in a mass production manner with higher yield.

Abstract: A method of maintaining photolithographic precision alignment for a wafer after being bonded, wherein two cavities are formed at the rear surface of a top wafer at the position corresponding to alignment marks made on a bottom wafer. The depth of both cavities is deeper than that of a final membrane structure. The top wafer is then bonded to the bottom wafer which already has alignment marks and a microstructure. This bonded wafer is annealed to intensify its bonding strength. After that, a thinning process is applied until the thickness of the top wafer is reduced to thinner than the cavity depth such that the alignment marks are emerged in the top wafer cavities thereby serving as alignment marks for any exposure equipment.

Abstract: A film bulk acoustic device having integrated trimmable device comprises a FBAR and a integrated tunable and trimmable device being integrated on a common substrate, at least a common electrode or piezoelectric layer. By trimming the integrated trimmable device or the FBAR and alter either the capacitance or inductance of the integrated trimmable device until the film bulk acoustic device having integrated trimmable device achieves the target resonance frequency. By taking advantage of the electrostatic force, the integrated tunable device is capable of providing tuning until the film bulk acoustic device having integrated tunable device achieves the target resonance frequency.

Abstract: Disclosed is a retro-reflective type optical signal processing device and method, particularly to a device includes a set of optical mirror planes with retro-reflective type layout and configuration, and a set of micro-shutters controlled by microelectromechanical actuators, whereas the optical signals in propagation can be blocked or partially blocked in terms of the position of said a set of micro-shutters corresponding to the optical signal transmission path, thereby the method of said approach to determine the range of attenuated optical signal is a variable optical attenuation function demonstrated by present invention. Such a retro-reflective type optical signal processing device and method further comprises a set of three reflective mirrors and micro-shutters with reflective mirrors. Thereby this device has the capability to switch 2 sets of retro-reflected optical light transmission paths, the method of said approach is a demonstration of 2×2 optical switching function.

Abstract: A measurement method for the thinned thickness of the silicon wafer, wherein thickness inspection patterns are fabricated onto the silicon wafer substrate by anisotropic etching, and then the wafer is polished with a polisher; thus a wafer with desired thickness can be obtained after the polish is proceeded; the thickness of the upper wafer is determined by the said inspection patterns, then the wafer is sorted by thickness; thus it can be applied to the MEMS micromachined devices that in need of the wafer with such precise thickness.