Abstract: The present invention relates to a silicon pressure sensor that in need of three strips of piezoresistors on each side and the manufacturing method thereof; wherein, the impurity concentration of the piezoresistors are about 1019-1020 cm?3 in order to reduce the influence of temperature; the lead between the piezoresistors (namely the internal connection lead) is a highly-doping interconnect (about 1021 cm?3) fabricated along the direction with minimum piezoresistance coefficient; with regard to the connection circuit for connecting the piezoresistors with the external Wheatstone bridge circuit (namely the external connection circuit), of which one end near the inner side of the membrane is also fabricated along the direction with minimum piezoresistance coefficient, and another end of the lead near the edge of the membrane is a interconnect that is perpendicular to the diaphragm, and is connected out to the external circuit; with this structure, the four resistors of the Whetstone bridge are balanced and sym

Abstract: Disclosed is a retro-reflective type optical signal processing device and method, particularly to a device includes a set of optical mirror planes with retro-reflective type layout and configuration, and a set of micro-shutters controlled by microelectromechanical actuators, whereas the optical signals in propagation can be blocked or partially blocked in terms of the position of said a set of micro-shutters corresponding to the optical signal transmission path, thereby the method of said approach to determine the range of attenuated optical signal is a variable optical attenuation function demonstrated by present invention. Such a retro-reflective type optical signal processing device and method further comprises a set of three reflective mirrors and micro-shutters with reflective mirrors. Thereby this device has the capability to switch 2 sets of retro-reflected optical light transmission paths, the method of said approach is a demonstration of 2×2 optical switching function.

Abstract: Disclosed is an optical switch using V-beam electrothermal actuators, buckle beam springs, and movement translation mechanism with its bi-directional movable latched function for optical communication applications. In the preferred embodiments, various layout combinations of the V-beam electrothermal actuators, the buckle beam springs, a reflective mirror shutter connected to a shutter beam, and spatial joint to enable various operation approaches to realize the bi-stable switching function without external electrical load and electrical power consumption of said optical switch regarding the input optical signals transmitting toward the output channels, or the input optical signals transmitting forward to the reflective mirror shutter and then being reflected toward the output channel.

Abstract: The present invention relates to a silicon pressure sensor that in need of three strips of piezoresistors on each side and the manufacturing method thereof; wherein, the impurity concentration of the piezoresistors are about 1019-1020 cm−3 in order to reduce the influence of temperature; the lead between the piezoresistors (namely the internal connection lead) is a highly-doping interconnect (about 1021 cm−3) fabricated along the direction with minimum piezoresistance coefficient; with regard to the connection circuit for connecting the piezoresistors with the external Wheatstone bridge circuit (namely the external connection circuit), of which one end near the inner side of the membrane is also fabricated along the direction with minimum piezoresistance coefficient, and another end of the lead near the edge of the membrane is a interconnect that is perpendicular to the diaphragm, and is connected out to the external circuit; with this structure, the four resistors of the Whetstone bridge are bala

Abstract: A package structure and method for making devices of system-in-a-package (SiP). Substrates with integrated and assembled elements can be aligned and pre-bonded together, and fluidic encapsulating materials is applied to seal the rest opening of pre-bonded interface of substrates. Three dimensional and protruding microstructures, elements, and MFMS devices can be accommodated and protected inside a spatial space formed by the bonded substrates. By applying the technologies of flip-chip, chip-scale-packaging, and wafer-level-packaging in conjunction with present invention, then plural elements and devices can be packaged together and become a system device in wafer-level-system-in-a-package (WLSiP) format.

Abstract: The present invention generally relates to optical communication systems, and more particularly, to an apparatus combining microelectromechanical systems (MEMS) elements and optical wavelength division multiplexing/demultiplexing (WDM) elements for optical wavelength selective add/drop application. Wherein, optical fiber arrays or optical planar waveguide arrays are used as the input terminal and the output terminal of multiple optical signals. Moreover, 1×N one-dimensional micro-mirror arrays manufactured by using the MEMS technology are applied to change the transmitting directions of the optical signal of each channel between the input terminals and the output terminals, thus, it achieves the purpose of switching the optical signals from one channel of input terminals to another corresponding channel of output terminals.

Abstract: A package structure and method for making devices of system-in-a-package (SiP). Substrates with integrated and assembled elements can be aligned and pre-bonded together, and fluidic encapsulating materials is applied to seal the rest opening of pre-bonded interface of substrates. Three dimensional and protruding microstructures, elements, and MEMS devices can be accommodated and protected inside a spatial space formed by the bonded substrates. By applying the technologies of flip-chip, chip-scale-packaging, and wafer-level-packaging in conjunction with present invention, then plural elements and devices can be packaged together and become a system device in wafer-level-system-in-a-package (WLSiP) format.

Abstract: Disclosed herein is a method for inductor An Improved Structure For the Endpiece of Tape Rule of the high frequency integrated passive devices in which a spiral inductor pattern is formed on an insulation substrate, the spiral inductor pattern is spirally coiled outwards from the center. A thick film dielectric layer made of bisbenzocyclobutene (BCB) is formed on the spiral inductor pattern. A metal layer can be formed according to under bump metallization technique (UBM). The metal layer is either formed into a continuous spirally coiled form or a spread discrete configuration. With this structure, laser trimming can be applied to the metal layer pattern so as to acquire an ideal inductance value, thereby achieving wafer level trimming and compensating the process tolerance.

Abstract: A bulk acoustic wave multiplexer controlled by micro-electro-mechanical switches, it comprises: a substrate; a wave-filtering device disposed on the substrate; an input port disposed on one side of the wave-filtering device; an output port disposed on another side of the wave-filtering device; and micro-electro-mechanical switches disposed on the wave-filtering device for controlling the bulk acoustic wave multiplexer; the present invention provides a bulk acoustic wave multiplexer device having miniaturized size and less interference integrated with micro-electro-mechanical switch devices, so as to operate multiplexing function.

Abstract: An optical signal processing apparatus based on movable tilted reflection mirror comprises a movable tilted reflection mirror unit and a micro actuator. The micro actuator is used to control and actuate the relative location and position of the movable reflection mirror unit with respect to the optical transmission path of light signals. To control the light intensity of the incoming optical signals being reflected toward output ports and the light intensity of the optical signals transmitted forward to output ports, the light intensity is adjusted in terms of the location of the movable tilted reflection mirror unit which is determined by electrically controlling said micro-actuator. The movable tilted reflection mirror unit comprises at least one reflective mirror plane, which can be a flat mirror plane, a shaped mirror plane, or a curved mirror plane.

Abstract: A three dimensional adjustable high frequency inductor, its module and fabrication method of the same; the high frequency module comprises micro high frequency inductors, filters, resistors, capacitors and associated with active components or power components to form a hybrid circuit, then it is packaged by using the technology of flip chip or wafer level packaging, so as to upgrade properties of high frequency modules and reduce the packaging and instrumentation costs by minimizing the modular size.

Abstract: A thin film acoustic wave device and the manufacturing method thereof, it provides a method of manufacturing acoustic wave devices of different FOM (figures of merit) by means of the crystalline orientation of the piezoelectric layer in cooperated with the various electric field directions of the driving electrode, so as to provide acoustic wave devices that are optimized under various specifications.

Abstract: A measurement method for the thinned thickness of the silicon wafer, wherein thickness inspection patterns are fabricated onto the silicon wafer substrate by anisotropic etching, and then the wafer is polished with a polisher; thus a wafer with desired thickness can be obtained after the polish is proceeded; the thickness of the upper wafer is determined by the said inspection patterns, then the wafer is sorted by thickness; thus it can be applied to the MEMS micromachined devices that in need of the wafer with such precise thickness.

Abstract: A film bulk acoustic device having integrated trimmable device comprises a FBAR and a integrated tunable and trimmable device being integrated on a common substrate, at least a common electrode or piezoelectric layer. By trimming the integrated trimmable device or the FBAR and alter either the capacitance or inductance of the integrated trimmable device until the film bulk acoustic device having integrated trimmable device achieves the target resonance frequency. By taking advantage of the electrostatic force, the integrated tunable device is capable of providing tuning until the film bulk acoustic device having integrated tunable device achieves the target resonance frequency.

Abstract: A method for manufacturing a film bulk acoustic wave filter, wherein a single-layer high-acoustic-impedance reflection layer is applied for the film bulk acoustic wave, for example, a diamond film with single-layer high-acoustic-impedance or a BCB film with single-layer low-acoustic-impedance is used as a reflection layer under the film bulk acoustic wave device in order to replace the cavity-reflective construction or the multi-layer reflection construction that are presently used; thus, there is no need for etching the cavity, the steadiness of the device and the yield of the device can be improved, and the FOM (figure of merit) of the film acoustic wave device is also improved; further, as there is no backside etching and front-side etching proceeded, the size of die is reduced greatly, so it is advantageous to mass production.

Abstract: A manufacturing method for a high quality film bulk acoustic wave device, wherein a lower electrode protecting layer is partially defined or not applied, thus the quality factor of the bulk acoustic wave device is improved.

Abstract: A micro-electro-mechanical high frequency switch and method for manufacturing the high frequency switch, comprising the steps of: providing a substrate; forming a metal transmission line and a driving electrode on the substrate; forming a dielectric layer on said metal transmission line and said driving electrode; forming a micro-electro-mechanical switch; forming driving electrodes on and beneath the micro-electro-mechanical switch; such that the driving voltage of high frequency switch is reduced, the insertion loss is lowered, the isolation is high, and the functions of high frequency switch is improved.

Abstract: A bulk acoustic wave multiplexer controlled by micro-electro-mechanical switches, it comprises: a substrate; a wave-filtering device disposed on the substrate; an input port disposed on one side of the wave-filtering device; an output port disposed on another side of the wave-filtering device; and micro-electro-mechanical switches disposed on the wave-filtering device for controlling the bulk acoustic wave multiplexer; the present invention provides a bulk acoustic wave multiplexer device having miniatuized size and less interference integrated with micro-electro-mechanical switch devices, so as to operate multiplexing function.

Abstract: A bulk acoustic wave filter device and its package. The filter devices greatly decreases the manufacturing process complexity by the coplanar electrode layout, and it omits the process steps of forming via hole of connectors, such that it is convenient to the coplanar high frequency on-wafer measurement and trimming. Furthermore, by using the wafer level chip scale package (WLCSP) technique, which to integrate the series resonator and the shunt resonator can be integrated, the spaces of filter can be saved and the cost of package can be down.