Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.

Abstract: The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.

Abstract: A method of forming a gate metallization in a semiconductor integrated circuit by forming a polycrystalline silicon layer over a gate dielectric layer and then converting the polycrystalline silicon layer into tungsten or tungsten silicide by exposing the polycrystalline silicon to tungsten hexafluoride gas. The method enables the formation of polycrystalline silicon and tungsten or tungsten silicide in the same process cycle in the same reactor or in two similarly configured reactors or in two similarly configured clustered reactors.

Abstract: A transport assembly that supports a substrate and controllably moves the substrate within a semiconductor processing system in a manner that reduces the likelihood of the substrate being damaged. The assembly includes a spatula having an uneven upper surface that contacts the substrate. The spatula upper surface includes a plurality of protrusions that form peaks and a plurality of valleys between the peaks. Each of the peaks contacts the lower surface of the substrate so as to distribute the pressure exerted by the spatula on the substrate. A network of channels is created between the lower surface of the substrate and the valleys of the spatula that enables gas to readily flow therethrough. The channels extend to openings along the sides of the spatula to communicate the channels with neighboring space. Entrapped pockets of heated gas are inhibited from forming underneath the substrate, and the substrate can be easily lifted off of the spatula.

Abstract: A generally horizontally-oriented quartz CVD chamber is disclosed with front and rear chamber divider plates adjacent a centrally positioned susceptor and surrounding temperature control ring which divide the chamber into upper and lower regions. Improvement to the lifetime of CVD process components and related throughput improvements are disclosed. A getter plate for attracting some of the unused reactant gas is positioned downstream from the susceptor extending generally parallel to and spaced between the divider plate and the upper chamber wall. This getter plate also minimizes deposition on the chamber walls and improves the efficiency of a cleaning step. Reradiating elements are also located adjacent side walls of the chamber to heat cooler chamber wall areas. The getter plate and the reradiating elements plus the susceptor and surrounding ring are all made of solid chemical vapor deposited SiC to improve the life of the chamber.

Abstract: A device that supports a substrate in a non-containing manner so as to controllably move the substrate within a substrate processing system. The device includes an end effector carrying support pads each having a vertical gas outlet and a horizontal outlet communicating with a gas supply to form a plurality of vertical gas jets and a plurality of horizontal gas jets. The vertical gas jets impinge on a lower surface of the substrate to urge the substrate into a fixed vertical position with respect to the support pads and the horizontal gas jets impinge on the substrate edge to urge the substrate into a fixed horizontal position with respect to the pads.

Abstract: The invention is a carrier comprising three support elements connected by an underlying frame. The periphery of a wafer rests upon the support elements. The invention also comprises a wafer handler with a plurality of arms. Spacers space the carrier above a base plate associated with a station in a wafer handling area. An arm slides beneath the frame and between the spacers, but the handler does not contact the wafer. A method of using the handler and carrier is provided where the handler lifts and rotates the carrier with the wafer through various stations in a wafer handling area. A control device reduces the handler speed only at critical points of the processing cycle. The handler is capable of moving a plurality of carriers and wafers simultaneously.

Abstract: A system for facilitating wafer transfer comprises a susceptor unit consisting of an inner susceptor section which rests within an outer susceptor section. A vertically movable and rotatable support spider located beneath the susceptor unit can rotate into positions to engage either the inner or the outer susceptor sections. When the inner section is engaged, the support spider lifts the inner section vertically out of the outer section. When the outer section is engaged, the support spider raises and lowers the entire susceptor unit. A robotic arm end effector engaging only the lower surface of the outer edge of the wafer permits hot wafer pick-up and unloading by the inner susceptor section. Several end effectors are disclosed that minimize non-uniform thermal effect on the substrate.

Abstract: A method is provided for treating wafers on a low mass support. The method includes mounting a temperature sensor in proximity to the wafer, which is supported on the low mass support, such that the sensor is only loosely thermally coupled to the wafer. A temperature controller is programmed to critically tune the wafer temperature in a temperature ramp, though the controller directly controls the sensor temperature. A wafer treatment, such as epitaxial silicon deposition, is started before the sensor temperature has stabilized. Accordingly, significant time is saved for the treatment process, and wafer throughput improved.

Abstract: A method is provided for the rapid cooling of a processed semiconductor wafer after a wafer heating by radiation process. The method includes the introduction of a radiation absorbing material element between the processed wafer and highly reflective surfaces—after a wafer heating by radiation process. The highly reflective surfaces reflect and re-direct radiant energy from the processed wafer and its surrounding components back to the processed wafer, impeding its cooling process. The radiation-absorbing material element, once between the processed wafer and the highly reflective surfaces, absorbs radiation from the processed wafer and its surrounding components, expediting their cooling process. Accordingly, significant time is saved for the cooling process, thus improving overall wafer throughput.

Abstract: A Bernoulli wand type semiconductor wafer pickup device that is adapted to regulate the temperature of a wafer while the wafer is being repositioned within a semiconductor processing system. In one embodiment, the device is comprised of a resistive heating element that is adapted to raise the temperature of the pickup device. In particular, by raising the temperature of the pickup device, a portion of the thermal radiation emitted from the device is absorbed by the wafer, thus providing a means for regulating the wafer temperature. In another embodiment, the device is adapted with the characteristics of a black body absorber so as to enable the device to optimally absorb thermal radiation from external radiant sources, thereby providing a means for increasing the temperature of the device. In another embodiment, the device is coated with reflective material that enables a large portion of thermal radiation emitted from the wafer to be reflected and absorbed back into the wafer.

Abstract: A method is disclosed for depositing silicon with high deposition rates and good step coverage. The process is performed at high pressures, including close to atmospheric pressures, at temperatures of greater than about 650° C. Silane and hydrogen are flowed over a substrate in a single-wafer chamber. Advantageously, the process maintains good step coverage and high deposition rates (e.g., greater that 50 nn/min) even when dopant gases are added to the process, resulting in commercially practicable rates of deposition for conductive silicon. Despite the high deposition rates, step coverage is sufficient to deposit polysilicon into extremely deep trenches and vias with aspect ratios as high as 40:1, filling such structures without forming voids or keyholes.

Abstract: Methods and apparatuses are provided for cooling semiconductor substrates prior to handling. In one embodiment, a substrate and support structure combination is lifted after high temperature processing to a cold wall of a thermal processing chamber, which acts as a heat sink. Conductive heat transfer across a small gap from the substrate to the heat sink speeds wafer cooling prior to handling the wafer (e.g., with a robot). In another embodiment, a separate plate is kept cool within a pocket during processing, and is moved close to the substrate and support after processing. In yet another embodiment, a cooling station between a processing chamber and a storage cassette includes two movable cold plates, which are movable to positions closely spaced on either side of the wafer.

Abstract: A nonlinear model-based predictive temperature control system is described for use in thermal process reactors. A multivariable temperature response is predicted using a nonlinear parameterized model of a thermal process reactor. The nonlinear parameterized model is implemented using a neural network. Predictions are made in an auto-regressive moving average fashion with a receding prediction horizon. Model predictions are incorporated into a control law for estimating the optimum future control strategy. The high-speed, predictive nature of the controller renders it advantageous in multivariable rapid thermal processing reactors where fast response and high temperature uniformity are needed.

Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support wafers in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The susceptor support arms are hollow and conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages within the segmented susceptor are arranged to provide even heat distribution from the sweep gas prior to delivery underneath the wafer.

Abstract: A CVD processing reactor employs a pyrometer to control temperature ramping. The pyrometer is calibrated between wafer processing by using a thermocouple that senses temperature during a steady state portion of a processing operation.

Abstract: A dual-arm wafer hand-off assembly includes a pair of pickup arms for transferring wafers within a wafer processing system. The two pickup arms are adapted to move such that the wafer on one of the arms can be positioned over the other arm and handed off. In one version, a Bernoulli-style wand translates along a linear guideway and may be positioned over a paddle-style pickup arm. The wafer carried by the Bernoulli wand can be handed off to the paddle by shutting off the flow of gas from the Bernoulli wand jets. The two pickup arms may be mounted on linear slides and adapted to translate between a load/unload chamber and a processing chamber, or the guideway may be adapted to rotate to allow transfer of wafers to multiple processing chambers in a cluster system. One of the pickup arms is preferably an all-quartz Bernoulli-style pickup arm having a proximal arm portion and a distal wand.

Abstract: A machine for manufacturing semiconductor devices has a. processing chamber for processing the semiconductor wafer. A transfer chamber has at least two positions, one position to facilitate the transfer of a wafer to be processed into the transfer chamber and to facilitate the transfer of a processed wafer from the transfer chamber to the cassette from which the wafer originated. The second position facilitates the transfer of a wafer to and from the processing chamber. A transfer arm simultaneously transfers an unprocessed wafer from the first position to the second position with the transfer of a processed wafer from the second position to the first position.

Abstract: A stackable cassette for testing at least one separate wafer during the processing of a plurality of semiconductor wafers is disclosed. The stackable cassette includes a bottom surface which conforms to a top portion of a base cassette having a plurality of wafers. In addition, the stackable cassette includes two or more supports which extend vertically from the bottom surface and a top surface horizontally connected to the two supports. The supports include ribs which form channels for holding at least one wafer. When processing the plurality of wafers, the stackable cassette is placed on top of a base cassette. A specified processed wafer is placed within the stackable cassette. The stackable cassette is then removed for inspection of the test wafer.

Abstract: An apparatus and method for reducing particles in reactors. The apparatus includes an enclosure for processing the semiconductor wafers. The enclosure has a wafer handling chamber connected by an isolation gate valve to a processing chamber. Additionally, the apparatus includes pipes for delivering a purge gas into the wafer handling chamber. The purge gas is used to eliminates particles from the enclosure. The apparatus also includes a pilot operated back pressure regulator for regulating the delivery and removal of the purge gas from the enclosure. The apparatus actuates the isolation gate valve in a controlled rate to reduce disturbances from the purge gas entering into the enclosure. The apparatus also includes a Bernoulli wand for lifting and holding a single semiconductor wafer. A dome loaded regulator is used to control the ramp rates of the gas to the Bernoulli wand. The dome loaded regulator is actuated by a pilot gas.