Patents Assigned to ASM Japan K.K.
  • TECHNOLOGY OF DETECTING ABNORMAL OPERATION OF PLASMA PROCESS
    Publication number: 20090061074
    Abstract: A method of detecting abnormal operation of a plasma process, includes: (i) detecting a potential Vpp1 between an upper electrode and a lower electrode disposed parallel to each other in a reaction camber at a time T1 after the plasma process begins in the reaction chamber; (ii) detecting a Vpp2 between the upper electrode and the lower electrode at a time T2 after T1; (iii) comparing Vpp1 and Vpp2 to obtain an operation value; and (iv) determining abnormal operation if the operation value is within a predetermined range.
    Type: Application
    Filed: November 6, 2008
    Publication date: March 5, 2009
    Applicant: ASM JAPAN K.K.
    Inventors: Masahiro Takizawa, Takashi Wada
  • METHOD AND APPARATUS FOR MONITORING PLASMA-INDUCED DAMAGE USING DC FLOATING POTENTIAL OF SUBSTRATE
    Publication number: 20090056627
    Abstract: A method for monitoring plasma-induced damage to a substrate while being processed in a plasma CVD apparatus includes: measuring DC floating potential of the substrate using a detection electrode in contact with the substrate while the substrate is processed in the apparatus; and detecting abnormality as plasma-induced damage based on the measured DC floating potential.
    Type: Application
    Filed: August 30, 2007
    Publication date: March 5, 2009
    Applicant: ASM JAPAN K.K.
    Inventors: Mitsutoshi SHUTO, Yasushi FUKASAWA, Yasuaki SUZUKI
  • METHOD FOR CONTROLLING SEMICONDUCTOR-PROCESSING APPARATUS
    Publication number: 20090055013
    Abstract: A method controls an apparatus such as a semiconductor-processing apparatus including a controller and at least one device controlled by the controller, wherein the controller is provided with an interface for communicating with the device, and the interface has an internal clock for measuring time intervals for the communication. The method includes: replacing a system clock of the controller's operating system, which is used for transmitting instructions to the interface, with the internal clock of the interface; transmitting instructions to the interface from the controller using the time intervals measured by the internal clock substituting the system clock; and transmitting the instructions to the device from the interface using the time intervals measured by the internal clock in the interface, thereby controlling the device.
    Type: Application
    Filed: August 21, 2007
    Publication date: February 26, 2009
    Applicant: ASM JAPAN K.K.
    Inventors: Masahiro TAKIZAWA, Kazuyoshi ISHIGAYA
  • METHOD FOR MANAGING UV IRRADIATION FOR CURING SEMICONDUCTOR SUBSTRATE
    Publication number: 20090023229
    Abstract: A method for managing UV irradiation for curing a semiconductor substrate, includes: passing UV light through a transmission glass window provided in a chamber for curing a semiconductor substrate placed in the chamber; monitoring an illuminance upstream of the transmission glass window and an illuminance downstream of the transmission glass window; determining a timing and/or duration of cleaning of the transmission glass window, a timing of replacing the transmission glass window, a timing of replacing a UV lamp, and/or an output of the UV light based on the monitored illuminances.
    Type: Application
    Filed: July 19, 2007
    Publication date: January 22, 2009
    Applicant: ASM JAPAN K.K.
    Inventors: Kiyohiro MATSUSHITA, Kenichi KAGAMI
  • Selective formation of metal layers in an integrated circuit
    Patent number: 7476618
    Abstract: A method for enhancing the reliability of copper interconnects and/or contacts, such as the bottom of vias exposing top surfaces of buried copper, or at the top of copper lines just after CMP. The method comprises contacting the exposed copper surface with a vapor phase compound of a noble metal and selectively forming a layer of the noble metal on the exposed copper surface, either by a copper replacement reaction or selective deposition (e.g., ALD or CVD) of the noble metal.
    Type: Grant
    Filed: October 18, 2005
    Date of Patent: January 13, 2009
    Assignee: ASM Japan K.K.
    Inventors: Olli V. Kilpelä, Wonyong Koh, Hannu A. Huotari, Marko Tuominen, Miika Leinikka
  • Method of forming a carbon polymer film using plasma CVD
    Patent number: 7470633
    Abstract: A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C?H?X?, wherein ? and ? are natural numbers of 5 or more; ? is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.
    Type: Grant
    Filed: September 20, 2006
    Date of Patent: December 30, 2008
    Assignee: ASM Japan K.K.
    Inventors: Nobuo Matsuki, Yoshinori Morisada, Seijiro Umemoto, Jea Sik Lee
  • METHOD OF FORMING RUTHENIUM FILM FOR METAL WIRING STRUCTURE
    Publication number: 20080318417
    Abstract: A method of depositing a ruthenium(Ru) thin film on a substrate in a reaction chamber, includes: (i) supplying a gas of a ruthenium precursor into the reaction chamber so that the gas of the ruthenium precursor is adsorbed onto the substrate, wherein the ruthenium precursor a ruthenium complex contains a non-cyclic dienyl; (ii) supplying an excited reducing gas into the reaction chamber to activate the ruthenium precursor adsorbed onto the substrate; and (iii) repeating steps (i) and (ii), thereby forming a ruthenium thin film on the substrate.
    Type: Application
    Filed: September 5, 2008
    Publication date: December 25, 2008
    Applicant: ASM JAPAN K.K.
    Inventors: Hiroshi Shinriki, Hiroaki Inoue
  • Semiconductor-manufacturing apparatus equipped with cooling stage and semiconductor-manufacturing method using same
    Patent number: 7467916
    Abstract: A wafer transfer apparatus includes: (A) a mini environment that connects to a wafer storage part and a load lock chamber and is equipped with a transfer robot inside, in order to transfer wafers between the wafer storage part and load lock chamber in the presence of air flows; and (B) a cooling stage that opens and connects to the mini environment from the outside of the mini environment in the vicinity of the connection port of the load lock chamber, in order to temporarily hold a wafer so that the wafer is cooled by the air taken in from the mini environment.
    Type: Grant
    Filed: March 8, 2005
    Date of Patent: December 23, 2008
    Assignee: ASM Japan K.K.
    Inventors: Takayuki Yamagishi, Takeshi Watanabe
  • METHOD FOR FORMING INORGANIC SILAZANE-BASED DIELECTRIC FILM
    Publication number: 20080305648
    Abstract: A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at ?50° C. to 50° C.; and depositing by plasma reaction a film constituted by Si, N, and H containing inorganic silazane bonds.
    Type: Application
    Filed: June 6, 2007
    Publication date: December 11, 2008
    Applicant: ASM JAPAN K.K.
    Inventors: Atsuki FUKAZAWA, Nobuo MATSUKI, Jeongseok HA
  • METHOD FOR FORMING DIELECTRIC FILM USING POROGEN GAS
    Publication number: 20080305258
    Abstract: A method for reducing a dielectric constant of a cured film, includes: introducing a source gas at a flow rate of A, a porogen gas at a flow rate of B, an oxidizing gas at a flow rate of C, and an inert gas into a reaction space in which a substrate is place; increasing a ratio of B/(A+B) used as a parameter for controlling a dielectric constant of a cured film, by a degree substantially or nearly in proportion to a target decrease of dielectric constant of a cured film; applying RF power to the reaction space, thereby depositing a film on the substrate by plasma CVD; and curing the film to remove the porogen material, thereby forming pores in the cured film.
    Type: Application
    Filed: June 7, 2007
    Publication date: December 11, 2008
    Applicant: ASM JAPAN K.K.
    Inventor: Naoto TSUJI
  • Single-wafer-processing type CVD apparatus
    Patent number: 7462245
    Abstract: A single-wafer-processing type CVD apparatus for forming a thin film on an object to be processed includes a reaction chamber, a susceptor for placing the object thereon, a shower plate for emitting a jet of reaction gas to the object, which is set up in parallel and opposing to the susceptor, an orifice for bringing a liquid raw material and a carrier gas into the reaction chamber, which is formed through the ceiling of the reaction chamber, an evaporation plate means for vaporizing the liquid raw material, which is set up in a space between the ceiling of the reaction chamber and the shower plate, and a temperature controlling mechanism for controlling the shower plate and the evaporation plate means at respective given temperatures.
    Type: Grant
    Filed: July 14, 2003
    Date of Patent: December 9, 2008
    Assignee: ASM Japan K.K.
    Inventors: Akira Shimizu, Hideaki Fukuda, Hiroki Kanayama
  • PLASMA CVD APPARATUS HAVING NON-METAL SUSCEPTOR
    Publication number: 20080299326
    Abstract: A plasma CVD apparatus includes: a cooling susceptor for placing a substrate thereon and serving as an electrode; and a shower plate for introducing gas toward the susceptor via multiple throughholes formed therein. The shower plate serves as an electrode and is disposed in parallel to the susceptor. The cooling susceptor is made of a ceramic material provided with a cooling fluid flow path for passing a cooling fluid therethrough.
    Type: Application
    Filed: May 30, 2007
    Publication date: December 4, 2008
    Applicant: ASM JAPAN K.K.
    Inventors: Atsuki Fukazawa, Nobuo Matsuki, Lee Woo Jin, Mikio Shimizu
  • METHOD FOR FORMING AMORPHOUSE SILICON FILM BY PLASMA CVD
    Publication number: 20080299747
    Abstract: A method includes introducing a silicon-containing source gas and a dilution gas to a reactor to deposit an amorphous silicon film on a substrate by plasma CVD; and adjusting a compressive film stress to 300 MPa or less and a uniformity of film thickness within the substrate surface to ±5% or less of the amorphous silicon film depositing on the substrate as a function of a flow rate of the source gas, a flow rate of the dilution gas, and a pressure of the reactor which are used as control parameters.
    Type: Application
    Filed: May 30, 2007
    Publication date: December 4, 2008
    Applicant: ASM JAPAN K.K.
    Inventors: Hirofumi ARAI, Takashige WATANABE
  • Ruthenium thin film-formed structure
    Patent number: 7435484
    Abstract: A method of depositing a ruthenium(Ru) thin film on a substrate in a reaction chamber, includes: (i) supplying a gas of a ruthenium precursor into the reaction chamber so that the gas of the ruthenium precursor is adsorbed onto the substrate, wherein the ruthenium precursor a ruthenium complex contains a non-cyclic dienyl; (ii) supplying an excited reducing gas into the reaction chamber to activate the ruthenium precursor adsorbed onto the substrate; and (iii) repeating steps (i) and (ii), thereby forming a ruthenium thin film on the substrate.
    Type: Grant
    Filed: September 1, 2006
    Date of Patent: October 14, 2008
    Assignee: ASM Japan K.K.
    Inventors: Hiroshi Shinriki, Hiroaki Inoue
  • UV LIGHT IRRADIATING APPARATUS WITH LIQUID FILTER
    Publication number: 20080230721
    Abstract: A UV light irradiating apparatus for irradiating a semiconductor substrate with UV light includes: a reactor in which a substrate-supporting table is provided; a UV light irradiation unit connected to the reactor for irradiating a semiconductor substrate placed on the substrate-supporting table with UV light through a light transmission window; and a liquid layer forming channel disposed between the light transmission window and at least one UV lamp for forming a liquid layer through which the UV light is transmitted. The liquid layer is formed by a liquid flowing through the liquid layer forming channel.
    Type: Application
    Filed: March 23, 2007
    Publication date: September 25, 2008
    Applicant: ASM JAPAN K.K.
    Inventors: Kiyohiro MATSUSHITA, Kenichi KAGAMI
  • Apparatus, precursors and deposition methods for silicon-containing materials
    Patent number: 7425350
    Abstract: A method for making a Si-containing material comprises transporting a pyrolyzed Si-precursor to a substrate and polymerizing the pyrolyzed Si-precursor on the substrate to form a Si-containing film. Polymerization of the pyrolyzed Si-precursor may be carried out in the presence of a porogen to thereby form a porogen-containing Si-containing film. The porogen may be removed from the porogen-containing Si-containing film to thereby form a porous Si-containing film. Preferred porous Si-containing films have low dielectric constants and thus are suitable for various low-k applications such as in microelectronics and microelectromechanical systems.
    Type: Grant
    Filed: April 29, 2005
    Date of Patent: September 16, 2008
    Assignee: ASM Japan K.K.
    Inventor: Michael A. Todd
  • METHOD FOR INCREASING MECHANICAL STRENGTH OF DIELECTRIC FILM BY USING SEQUENTIAL COMBINATION OF TWO TYPES OF UV IRRADIATION
    Publication number: 20080220619
    Abstract: A method for increasing mechanical strength of a dielectric film includes: providing an initial dielectric film containing porogen; irradiating the initial dielectric film with first UV light having a first wavelength which is substantially or nearly similar to a maximum light absorption wavelength of the porogen for removing the porogen; and then irradiating the porogen-removed dielectric film with second UV light having a second wavelength which is shorter than the first wavelength, thereby increasing mechanical strength of the dielectric film.
    Type: Application
    Filed: March 9, 2007
    Publication date: September 11, 2008
    Applicant: ASM JAPAN K.K.
    Inventors: Kiyohiro MATSUSHITA, Naoto TSUJI
  • CLUSTER TYPE SEMICONDUCTOR PROCESSING APPARATUS
    Publication number: 20080210165
    Abstract: A cluster type semiconductor processing apparatus includes a wafer handling chamber having a polygonal base including multiple sides for wafer processing chambers and two adjacent sides for wafer loading/unloading chambers as viewed in a direction of an axis of the wafer handling chamber. An angle A between two adjacent sides of the multiple sides for wafer processing chambers is greater than an angle B which is calculated by dividing 360° by the number of the total sides consisting of the multiple sides for wafer processing chambers and the two adjacent sides for wafer loading/unloading chambers.
    Type: Application
    Filed: March 2, 2007
    Publication date: September 4, 2008
    Applicant: ASM JAPAN K.K.
    Inventors: Masahiro TAKIZAWA, Masaei SUWADA, Takashi HAGINO
  • Plasma CVD apparatus for forming uniform film
    Patent number: 7418921
    Abstract: A plasma CVD film formation apparatus includes: a reaction chamber; a shower plate installed inside the reaction chamber; and a susceptor for placing a wafer thereon installed substantially parallel to and facing the shower plate. The shower plate has a surface facing the susceptor, which is configured using a convex shape toward a center as a basic shape and overlaying at least one equation thereon, and the susceptor supports the wafer at a peripheral portion and at a position between a central portion and the peripheral portion.
    Type: Grant
    Filed: August 12, 2005
    Date of Patent: September 2, 2008
    Assignee: ASM Japan K.K.
    Inventors: Naoto Tsuji, Satoshi Takahashi
  • Method of forming carbon polymer film using plasma CVD
    Patent number: 7410915
    Abstract: A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C?H?X?, wherein ? and ? are natural numbers of 5 or more; ? is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and CO2 gas or H2 gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: August 12, 2008
    Assignees: ASM Japan K.K., Samsung Electronic Co., Ltd.
    Inventors: Yoshinori Morisada, Kamal Kishore Goundar, Masashi Yamaguchi, Nobuo Matsuki, Kyu Tae Na, Eun Kyung Baek