Abstract: A method of generating a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining the optical imaging system and a process to be utilized by the optical imaging system; defining a first model representing the imaging performance of the optical imaging system and the process, and calibrating the model, where the first model generates values corresponding to a latent image slope. The method further includes the step of defining a second model for estimating a line width roughness of a feature to be imaged, where the second model utilizes the latent image slope values to estimate the line width roughness.

Abstract: A method of determining calibration test patterns to be utilized to calibrate a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining design rules associated with a given imaging process; defining a model equation representing the imaging performance of the optical imaging system; determining a boundary of an imaging signal space based on the design rules; selecting calibration patterns based on the boundary of the imaging signal space such that the calibration patterns are on the boundary or within the boundary of the imaging signal space; and storing the selected calibration test patterns, where the calibration test patterns are utilized to calibrate the model for simulating the imaging performance of the optical imaging system.

Abstract: A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding—the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.

Abstract: A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of depositing a layer of transmissive material having a predefined percentage transmission on a substrate; depositing a layer of opaque material on the transmissive material; etching a portion of the substrate, the substrate being etched to a depth based on an etching selectivity between the transmissive layer and the substrate; exposing a portion of the transmissive layer by etching the opaque material; etching the exposed portion of the transmissive layer so as to expose an upper surface of the substrate; where the exposed portions of the substrate and the etched portions of the substrate exhibit a predefined phase shift relative to one another with respect to an illumination signal.

Abstract: A method of generating complementary masks for use in a multiple-exposure lithographic imaging process.

Abstract: A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

Abstract: A method for decomposing a target pattern containing features to be printed on a wafer.

Abstract: A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding- the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.

Abstract: A method of decomposing a target pattern containing features to be printed on a wafer into multiple patterns. The method includes the steps of: (a) defining a region of influence which indicates the minimum necessary space between features to be imaged; (b) selecting a vertex associated with a feature of the target pattern; (c) determining if an edge of another feature is within the region of influence with respect to the vertex; and (d) splitting the another feature into two polygons if the edge of another feature is within the region of influence.

Abstract: An illumination source is optimized by changing the intensity and shape of the illumination source to form an image in the image plane that maximizes the minimum ILS at user selected fragmentation points while forcing the intensity at the fragmentation points to be within a small intensity range. An optimum mask may be determined by changing the magnitude and phase of the diffraction orders to form an image in the image plane that maximizes the minimum ILS at user selected fragmentation points while forcing the intensity at the fragmentation points to be within a small intensity range. Primitive rectangles having a size set to a minimum feature size of a mask maker are assigned to the located minimum and maximum transmission areas ad centered at a desired location. The edges of the primitive rectangle are varied to match optimal diffraction orders O(m,n). The optimal CPL mask OCPL(x,y) is then formed.

Abstract: A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of obtaining data representing the plurality of features; and forming at least one of the plurality of features by etching a substrate to form a mesa and depositing a chrome layer over the entire upper surface of the mesa, where said mesa has a predetermined height.

Abstract: A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding—the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.

Abstract: A method of decomposing a target pattern containing features to be printed on a wafer into multiple patterns. The method includes the steps of: (a) defining a region of influence which indicates the minimum necessary space between features to be imaged; (b) selecting a vertex associated with a feature of the target pattern; (c) determining if an edge of another feature is within the region of influence with respect to the vertex; and (d) splitting the another feature into two polygons if the edge of another feature is within the region of influence.

Abstract: An illumination source is optimized by changing the intensity and shape of the illumination source to form an image in the image plane that maximizes the minimum ILS at user selected fragmentation points while forcing the intensity at the fragmentation points to be within a small intensity range. An optimum mask may be determined by changing the magnitude and phase of the diffraction orders to form an image in the image plane that maximizes the minimum ILS at user selected fragmentation points while forcing the intensity at the fragmentation points to be within a small intensity range. Primitive rectangles having a size set to a minimum feature size of a mask maker are assigned to the located minimum and maximum transmission areas ad centered at a desired location. The edges of the primitive rectangle are varied to match optimal diffraction orders O(m,n). The optimal CPL mask OCPL(x,y) is then formed.

Abstract: A method for minimizing rippling of features when imaged on a surface of a substrate using a mask. The method includes the steps of determining a deviation between a first representation of the design and a second representation of an image of the design at each of a plurality of evaluation points for each section of a plurality of sections of the design; determining an amount of modification of the design at each section based on an evaluation of the plurality of evaluation points; and modifying the design at each section by the amount determined in the previous step.

Abstract: A method of generating complementary dark field masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

Abstract: A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system.

Abstract: A process of obtaining short-range flare model parameters representing a short-range flare which degrades a contrast of an image generated by a lithography tool, is disclosed. Short-range flare is measured from the image to obtain measured short-range flare data. A simulation is performed based on short-range flare model parameters to obtain simulated short-range flare data. The simulated short-range flare data is compared with the measured short range flare data. It is determined whether the short-range flare model parameters used in the simulation is appropriate based on the comparison result. The short-range flare model parameters is optimized according to the measured short-range data and the simulated short-range flare data if the short-range flare model parameters used for the simulation is not appropriate.

Abstract: A method of determining diffractive optical elements to be utilized in an imaging process. The method includes the steps of defining a customized diffractive optical element which is based on a target pattern to be printed during the imaging process; decomposing the customized diffractive optical element into one or more standard diffractive optical elements; and defining an exposure dose to be assigned to each of the one or more standard diffractive optical elements.

Abstract: A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. The method includes the steps of: defining an initial H-mask corresponding to the target pattern; defining an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask having a width which is less than a predetermined critical width; identifying vertical critical features in the V-mask having a width which is less than a predetermined critical width; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.