Abstract: A method of generating masks for printing a pattern including a plurality of features having varying critical dimensions. The method includes the steps of: (1) obtaining data representing the pattern; (2) defining a plurality of distinct zones based on the critical dimensions of the plurality of features; (3) categorizing each of the features into one of the plurality of distinct zones; and (4) modifying the mask pattern for each feature categorized into a predefined distinct zone of the plurality of distinct zones.

Abstract: A method of generating complementary masks for use in a multiple-exposure lithographic imaging process.

Abstract: A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system.

Abstract: A method of optimizing a process for use with a plurality of lithography systems.

Abstract: Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle.

Abstract: A method of generating complementary masks for use in a multiple-exposure lithographic imaging process.

Abstract: A method of automatically applying optical proximity correction techniques to a reticle design containing a plurality of features. The method comprises the steps of: (1) generating a first set of rules for applying scatter bar assist features to the plurality of features for a given illumination setting; (2) generating a second set of rules for applying biasing to the plurality of features for said given illumination setting; (3) forming a look-up table containing the first set of rules and the second set of rules; and (4) analyzing each of the plurality of features with the first set of rules and the second set of rules contained in the look-up table to determine if either the first set of rules or the second set of rules is applicable to a given feature. If either the first set of rules or the second set of rules is applicable to the given feature, the given feature is modified in accordance with the applicable rule.

Abstract: A method of optimizing a process for use with a plurality of lithography systems.

Abstract: Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle.

Abstract: A method for compensating for lens aberrations, which includes the steps of: (a) defining a cost metric which quantifies an imaging performance of an imaging system, where the cost metric reflects the effects of lens aberrations on the imaging performance; (b) defining a source illumination profile; (c) evaluating the cost metric based on the source illumination profile; (d) modifying the source illumination profile, and re-evaluating the cost metric based on the modified source illumination profile; and (e) repeating step (d) until the cost metric is minimized. The source illumination profile corresponding to the minimized cost metric represents the optimal illumination for the imaging device.

Abstract: A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature, where the non-resolvable optical proximity correction feature is a phase-edge.

Abstract: A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature, where the non-resolvable optical proximity correction feature is a phase-edge.

Abstract: A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.

Abstract: A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.

Abstract: A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature disposed between two of the resolvable features to be printed, where the non-resolvable optical proximity correction feature has a transmission coefficient in the range of greater than 0% to less than 100%.

Abstract: A method of generating a mask for use in printing a target pattern on a substrate. The method includes the steps of: (a) determining a target pattern representing a circuit design to be printed on a substrate; (b) generating a first pattern by scaling the target pattern by a factor of 0.5; and (c) generating a second pattern by performing a Boolean operation which combines the target pattern and the first pattern. The second pattern is then utilized to print the target pattern on the substrate.

Abstract: A method of printing a gate pattern on a substrate comprising the steps of: identifying at least one area in the pattern in which one of the gate features overlays one of the active regions; reducing a width dimension of the one of the gate features at the location which the one of the gate features overlays the one of the active regions; extracting the gate features from the pattern; decomposing the gate features into a vertical component mask and a horizontal component mask; and illuminating the vertical component mask and the horizontal component mask utilizing dipole illumination.

Abstract: A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).

Abstract: A photolithography mask for optically transferring a pattern formed in said mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, where each of the plurality of resolvable features has a longitudinal axis extending in a first direction; and a pair of non-resolvable optical proximity correction features disposed between two of the plurality of resolvable features, where the pair of non-resolvable optical proximity correction features has a longitudinal axis extending in a second direction, wherein the first direction of the longitudinal axis of the plurality of resolvable features is orthogonal to the second direction of the longitudinal axis of the pair of non-resolvable optical proximity correction features.

Abstract: A method of transferring a lithographic pattern onto a substrate by use of a lithographic apparatus. The method includes the steps of: (1) defining features to be printed on the substrate; (2) determining which of the features require assist features to be disposed adjacent thereto in order for the features to be printed within defined resolution limits; (3) generating a mask containing the features to be printed and the assist features; (4) performing a first illumination process so as to print the features on the substrate, the first illumination process resulting in the partial printing of the assist features on the substrate; and (5) performing a second illumination process so as to reduce the amount of the assist features printed on the substrate; the second illumination process entails the step of performing a quadrapole illumination.