Abstract: A radiation source including: a hollow core optical fiber having a body having a hollow core for confining a working medium, the hollow core optical fiber being operable to receive pulsed pump radiation such that the received pulsed pump radiation propagates through the hollow core from an input end to an output end of the hollow core optical fiber, wherein one or more source parameters of the radiation source are configured such that the pulsed pump radiation undergoes a soliton self-compression process so as to change a spectrum of the pulsed pump radiation to form output radiation; and at least one dispersion control mechanism being operable to change dispersion characteristics in a first portion of the optical fiber so as to spectrally shift a dispersive wave generated in the soliton self-compression process.

Abstract: Apparatuses, systems, and methods for providing beams for using deflector control to control charging on a sample surface of charged particle beam systems. In some embodiments, a controller including circuitry configured to scan a plurality of nodes of the sample to charge the plurality of nodes; adjust a scan rate of a beam such that a quantity of charge deposited on each node of the plurality of nodes varies with respect to at least one other node; generate a plurality of images; and compare the plurality of images to enable detection of a defect associated with any of the plurality of nodes of the sample.

Abstract: A method for determining a substrate model for describing a first measurement dataset and a second measurement dataset relating to a performance parameter. The method include obtaining candidate basis functions for a plurality of substrate models. Steps 1 to 4 are performed iteratively for the first measurement dataset and the second measurement dataset until at least one stopping criterion is met so as to determine the substrate model, the steps including: 1. selecting a candidate basis function from the candidate basis functions; 2. updating a substrate model by adding the candidate basis function into this substrate model to obtain an updated substrate model; 3. evaluating the updated substrate model based on the first measurement dataset and/or second measurement dataset; and 4. determining whether to include the basis function within the substrate model based on the evaluation.

Abstract: In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.

Abstract: A method and system for predicting process information (e.g., phase data) using a given input (e.g., intensity) to a parameterized model are described. A latent space of a given input is determined based on dimensional data in a latent space of the parameterized model for a given input to the parameterized model. Further, an optimum latent space is determined by constraining the latent space with prior information (e.g., wavelength) that enables converging to a solution that causes more accurate predictions of the process information. The optimum latent space is used to predict the process information. The given input may be a measured amplitude (e.g., intensity) associated with the complex electric field image. The predicted process information can be complex electric field image having amplitude data and phase data. The parameterized model comprises variational encoder-decoder architecture.

Abstract: A wafer including a mask on one face and at least one layer on an opposite face, wherein the mask has at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle, the method including: providing a wafer having a mask on one face and at least one layer on an opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle, the method including: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidising environment. In any aspect, the pellicle may include a metal nitride layer.

Abstract: A method for improving a process model for a patterning process, the method including obtaining a) a measured contour from an image capture device, and b) a simulated contour generated from a simulation of the process model. The method also includes aligning the measured contour with the simulated contour by determining an offset between the measured contour and the simulated contour. The process model is calibrated to reduce a difference, computed based on the determined offset, between the simulated contour and the measured contour.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.

Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

Abstract: Described herein is a method for determining process drifts or outlier wafers over time in semiconductor manufacturing. The method involves obtaining a key performance indicator (KPI) variation (e.g., LCDU) characterizing a performance of a semiconductor process over time, and data associated with a set of factors associated with the semiconductor process. A model of the KPI and the data is used to determine contributions of a first set of factors toward the KPI variation, the first set of factors breaching a statistical threshold. The contributions from the first set of factors toward the KPI variation is removed from the model to obtain a residual KPI variation. Based on the residual KPI variation, a residual value breaching a residual threshold is determined. The residual value indicates process drifts in the semiconductor process over time or an outlier substrate corresponding to the residual value at a certain time.

Abstract: A charged particle apparatus, configured to project a charged particle multi-beam toward a sample, comprises: a charged particle source configured to emit a charged particle beam; a light source configured to emit light; and a charged particle-optical device configured to project toward the sample sub-beams of a charged particle multi-beam derived from the charged particle beam; wherein the light source is arranged such that the light is projected along paths of the sub-beams through the charged particle-optical device so as to irradiate at least a portion of the sample.

Abstract: An object table configured to hold an object on a holding surface, the object table including: a main body; a plurality of burls extending from the main body, end surfaces of the burls defining the holding surface; an actuator assembly; and a further actuator assembly, wherein the actuator assembly is configured to deform the main body to generate a long stroke out-of-plane deformation of the holding surface based on shape information of the object that is to be held and the further actuator assembly is configured to generate a short stroke out-of-plane deformation of the holding surface.

Abstract: A membrane cleaning apparatus for removing particles from a membrane, the apparatus including: a membrane support for supporting the membrane; and a pressure pulse generating mechanism including one or more laser energy sources configured to generate a pressure pulse in a gas. The one or more energy laser sources may be focused to generate a pressure pulse in a gaseous atmosphere. The pressure pulse serves to dislodge particles on the membrane.

Abstract: Provided are light sources and methods of controlling them, and devices and methods for use in measurement applications, particularly in metrology, for example in a lithographic apparatus. The methods and devices provide mechanisms for detection and/or correction of variations in the light source, in particular stochastic variations. Feedback or feedforward approaches can be used for the correction of the source and/or the metrology outputs. An exemplary method of controlling the spectral output of a light source which emits a time-varying spectrum of light includes the steps of: determining at least one characteristic of the spectrum of light emitted from the light source; and using said determined characteristic to control the spectral output.

Abstract: A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack having a planar substrate and at least one membrane layer, wherein the planar substrate includes an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly includes: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the selectively removing the inner region of the planar substrate.

Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.

Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.

Abstract: An optical filter apparatus including an optical divergence device, operable to receive optical pulses and spatially distribute the optical pulses over an optical plane in dependence with a pulse energy of each of the optical pulses; and a spatial filter, located at the optical plane, operable to apply spatial filtering to the optical pulses based on a location of each of the optical pulses at the optical plane resulting from the spatial distributing.

Abstract: A sub-beam aperture array for forming a plurality of sub-beams from one or more charged particle beams. The sub-beam aperture array comprises one or more beam areas, each beam area comprising a plurality of sub-beam apertures arranged in a non-regular hexagonal pattern, the sub-beam apertures arranged so that, when projected in a first direction onto a line parallel to a second direction, the sub-beam apertures are uniformly spaced along the line, and wherein the first direction is different from the second direction. The system further comprises a beamlet aperture array with a plurality of beamlet apertures arranged in one or more groups. The beamlet aperture array is arranged to receive the sub-beams and form a plurality of beamlets at the locations of the beamlet apertures of the beamlet array.