Abstract: A method of measuring a target, an associated lithographic method, an associated computer program product and an associated litho cell is provided, wherein the method includes measuring the target subsequent to exposure of structures by a lithographic process in a current layer on a substrate over one or more preceding layers, wherein the one or more preceding layers have each undergone an etch step, and wherein the target is only in at least one of the one or more preceding layers. In this way, an after-etch measurement of the target can be obtained.

Abstract: A method for controlling a lithographic apparatus, and associated apparatuses. The method is configured to provide product structures to a substrate in a lithographic process and includes determining optimization data. The optimization data includes measured and/or simulated data of at least one performance parameter associated with the product structures and/or their arrangement which are to be applied to the substrate in the lithographic process. Substrate specific metrology data as measured and/or modeled before the providing of product structures to the substrate is determined, the substrate specific metrology data including metrology data relating to a characteristic of the substrate to which the structures are being applied and/or the state of the lithographic apparatus at the time that the structures are applied to the substrate.

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

Abstract: A method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method includes performing the inspection using inspection radiation obtained from a high harmonic generation source and having one or more wavelengths within a wavelength range of between 20 nm and 150 nm. Also, a method including performing a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, the second wavelength range comprising wavelengths shorter than the first wavelength range.

Abstract: A method for calibrating a resist model. The method includes: generating a modeled resist contour of a resist structure based on a simulated aerial image of the resist structure and parameters of the resist model, and predicting a metrology contour of the resist structure from the modeled resist contour based on information of an actual resist structure obtained by a metrology device. The method includes adjusting one or more of the parameters of the resist model based on a comparison of the predicted metrology contour and an actual metrology contour of the actual resist structure obtained by the metrology device.

Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

Abstract: A pellicle having a metal oxysilicide layer. A pellicle having a molybdenum layer, a ruthenium layer and a silicon oxynitride layer, wherein the molybdenum layer is disposed between the ruthenium layer and the silicon oxynitride layer. A method of manufacturing a pellicle for a lithographic apparatus, the method including providing a metal oxysilicide layer. A lithographic assembly including a pellicle having a metal oxysilicide layer. The use of a pellicle having a metal oxysilicide layer in a lithographic apparatus.

Abstract: A laser beam monitoring system configured to monitor an attribute of an incident laser beam (24), the laser beam monitoring system comprising a beam separating element (30) and a plurality of sensors (34a-34d), wherein the beam separating element is configured to form a plurality of sub-beams (24a-24d) from the incident laser beam (24), a first sub-beam being directed towards a first sensor of the plurality of sensors and a second sub-beam being directed towards a second sensor of the plurality of sensors, wherein relative intensities of the first and second sub-beams are determined by a spatial position at which the incident laser beam is incident upon the beam separating element.

Abstract: A method for determining a causal relationship between events in a plurality of parameter time series, the method including: identifying a first event associated with a parameter excursion event; identifying a second event associated with a failure event, wherein there are a plurality of events including the first events and second events; determining values of transfer entropy for pairs of the events to establish a causal relationship for each of the pairs of events; using the determined values of transfer entropy and identified causal relationships to determine a process network, wherein each of the events is a node in the process network, the edges between nodes being dependent upon the values of transfer entropy; identifying a directed cycle within the plurality of events and the causal relationships; classifying a directed cycle; and classifying one or more events having a causal relation to the classified directed cycle.

Abstract: An apparatus for determining a condition associated with a pellicle for use in a lithographic apparatus, the apparatus including a sensor, wherein the sensor is configured to measure a property associated with the pellicle, the property being indicative of the pellicle condition.

Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

Abstract: Disclosed is a method of performing a measurement in an inspection apparatus, and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.

Abstract: A method, and associated system, for determining an optimized set of measurement locations for measurement of a parameter related to a structure applied to a substrate by a semiconductor manufacturing process. The method includes determining a first set of parameter values from a first set of measurements of first structures across a first plurality of locations, for example from target measurements and determining a second set of parameter values from a second set of measurements of second structures across a second plurality of locations, for example using an SEM or e-beam tool on product structures. A correlation is determined between the first set of parameter values and the second set of parameter values and used to determine the optimized set of measurement locations.

Abstract: The invention relates to a vibration isolator, comprising: a base; a coupling element to be coupled to a vibration sensitive object; a decoupling mass; a first vibration isolator part arranged between the base and the decoupling mass; and a second vibration isolator part arranged between the decoupling mass and the coupling element, and wherein at least one of the first and second vibration isolator part comprises a pneumatic isolator.

Abstract: A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method including: obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.

Abstract: An object stage bearing system can include an object stage, a hollow shaft coupled to the object stage, and an in-vacuum gas bearing assembly coupled to the hollow shaft and the object stage. The in-vacuum gas bearing assembly can include a gas bearing, a scavenging groove, and a vacuum groove. The gas bearing is disposed along an inner wall of the in-vacuum gas bearing assembly and along an external wall of the hollow shaft. The scavenging groove is disposed along the inner wall such that the scavenging groove is isolated from the gas bearing. The vacuum groove is disposed along the inner wall such that the vacuum groove is isolated from the scavenging groove and the gas bearing.

Abstract: An inspection apparatus or lithographic apparatus includes an optical system and a detector. The optical system includes a non-linear prismatic optic. The optical system is configured to receive zeroth and first diffraction order beams reflected from a diffraction target and separate first and second polarizations of each diffraction order beam. The detector is configured to simultaneously detect first and second polarizations of each of the zeroth and first diffraction order beams. Based on the detected first and second polarizations of one or more diffraction orders, an operational parameter of a lithographic apparatus can be adjusted to improve accuracy or precision in the lithographic apparatus. The optical system can include a plurality of non-linear prismatic optics. For example, the optical system can include a plurality of Wollaston prisms.

Abstract: A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets.

Abstract: A supercontinuum radiation source comprises: a radiation source, an optical amplifier and a non-linear optical medium. The radiation source is operable to produce a pulsed radiation beam. The optical amplifier is configured to receive the pulsed radiation beam and increase an intensity of the pulsed radiation beam. The non-linear optical medium is configured to receive the amplified pulsed radiation beam and to broaden its spectrum so as to generate a supercontinuum radiation beam. The optical amplifier may supply a pump radiation beam to a gain medium, an intensity of the pump radiation beam being periodic and having a pump frequency that is an integer multiple of the frequency of the pulsed radiation beam. The optical amplifier may supply pump energy to a gain medium only when the pulses of the pulsed radiation beam propagate through the gain medium.

Abstract: A method for forming an optical fiber array. A substrate having a first surface and an opposing second surface is provided. The substrate is provided with a plurality of apertures extending through the substrate from the first surface to the second surface. In addition, a plurality of fibers are provided. The fibers have fiber ends with a diameter smaller than the smallest diameter of the apertures. A first fiber is inserted in a first corresponding aperture, from the first surface side of the substrate, such that the fiber end is positioned in close proximity of the second surface. The inserted first fiber is bent in a predetermined direction such that the fiber abuts a side wall of the first aperture at a predetermined position. After the first fiber is bent, a second fiber is inserted in a second corresponding aperture, from the first surface side of the substrate, such that the fiber end is positioned in close proximity of the second surface.