Abstract: A beam delivery apparatus is used with a laser produced plasma source. The beam delivery apparatus comprises variable zoom optics (550) operable to condition a beam of radiation so as to output a conditioned beam having a configurable beam diameter (b) and a plurality of mirrors (530a, 530b) operable to direct the conditioned beam of radiation to a plasma generation site. The beam delivery apparatus enables control of the axial position of the beam where the beam has a particular diameter, with respect to the beam's focus position (570). Also, a method is used to control the axial position of the location at a plasma generation site where a beam has a particular diameter, with respect to the beam's focus position.

Abstract: A position measurement system includes an interferometer to determine a position of an object. The interferometer is arranged to generate a first, second and third signals representative of the position by irradiating respective first, second and third areas of a reflective surface of the object. Along a line, the first and second areas are at a first distance relative to each other, the second and third areas are at a second distance relative to each other, and the first and third areas are at a third distance relative to each other. The interferometer is arranged to provide a rotation signal representative of a rotation of the object along an axis based on the first, second and third signals. The axis is parallel to the reflective surface and perpendicular to the line.

Abstract: A metrology apparatus for and a method of determining a characteristic of interest relating to at least one structure on a substrate. The metrology apparatus comprises a sensor and an optical system. The sensor is for detecting characteristics of radiation impinging on the sensor. The optical system comprises an illumination path and a detection path. The optical system is configured to illuminate the at least one structure with radiation received from a source via the illumination path. The optical system is configured to receive radiation scattered by the at least one structure and to transmit the received radiation to the sensor via the detection path.

Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.

Abstract: A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.

Abstract: A method to improve a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including computing a multi-variable cost function. The multi-variable cost function represents an interlayer characteristic, the interlayer characteristic being a function of a plurality of design variables that represent one or more characteristics of the lithographic process. The method further includes reconfiguring one or more of the characteristics of the lithographic process by adjusting one or more of the design variables and computing the multi-variable cost function with the adjusted one or more design variables, until a certain termination condition is satisfied.

Abstract: An inspection substrate for inspecting a component of an apparatus for processing production substrates, the inspection substrate having: a body having dimensions similar to the production substrates so that the inspection substrate is compatible with the apparatus; a sensor configured to generate inspection information relating to a parameter of the component of the apparatus, the sensor embedded in the body; a control detector embedded in the body and configured to detect a control signal transmitted by the apparatus for processing production substrates; and a controller embedded in the body and configured to control the sensor in response to detection of the control signal.

Abstract: A lithographic apparatus applies patterns to substrates, the substrates being processed as a plurality of lots. Each lot of substrates receives a particular layer pattern under layer-specific operating conditions. A thermal model is provided for modeling and compensating one or more characteristics of thermal behavior of components within the lithographic apparatus, in response to the varying layer-specific operating conditions associated with a sequence of lots. The thermal model is also used to simulate thermal behavior of the apparatus when processing a given collection of lots in different possible sequences. Based on comparison of the simulated thermal behavior in different sequences of lots, an optimized sequence is determined. Optionally, lot sequencing rules are determined and used to obtain a preferred thermal behavior when processing a collection of lots in the future.

Abstract: A lithographic apparatus (100) includes a patterning device support structure (104) configured to support a patterning device (110), a gas inlet (116) configured to provide a gas flow (114) across a surface of the patterning device, and a temperature conditioning device (134) configured to condition the temperature of the gas flow based on a set point. The apparatus also includes a sensor (132) configured to measure a parameter indicative of an amount of heat added to at least one of the patterning device and a volume (126) between the patterning device and a lens (124) of a projection system (106) during operational use of the lithographic system. Further, the apparatus includes a controller (130) operatively coupled to the sensor and configured to adjust the set point based on the parameter measured by the sensor to control a temperature of the patterning device.

Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

Abstract: A resist composition having a) metal-containing nanoparticles and/or nanoclusters, and b) ligands and or organic linkers, wherein one or both of a) or b) are multivalent. A resist composition wherein: the resist composition is a negative resist and the nanoparticles and/or nanoclusters cluster upon crosslinking of the ligands and/or organic linkers following exposure to electromagnetic radiation or an electron beam; or the resist composition is a negative resist and the ligands and/or organic linkers are crosslinked and the crosslinking bonds are broken upon exposure to electromagnetic radiation or an electron beam allowing the nanoparticles and/or nanoclusters to cluster together; or the resist composition is a positive resist and the ligands and/or organic linkers are crosslinked and the crosslinking bonds are broken upon exposure to electromagnetic radiation or an electron beam.

Abstract: A method of matching records from a plurality of data sources having variation between them in matching quality of their data, the method including repeatedly matching and filtering records from the data sources to obtain matched records using successively less strict matching rules, the matching rules being defined based on the variation in the matching quality.

Abstract: A method including obtaining at least a clip of a design layout, and determining a representation of the clip on a patterning device, under a condition that a reduction ratio from the representation to the clip is anisotropic. A method including obtaining a relationship between a first geometric characteristic in a design layout or an image thereof, and a second geometric characteristic in a representation of the design layout on a patterning device, wherein the relationship is a function involving reduction ratios in two different directions.

Abstract: The disclosure relates to methods of determining a value of a parameter of interest of a patterning process, and of cleaning a signal containing information about the parameter of interest. In one arrangement, first and second detected representations of radiation are obtained. The radiation is provided by redirection of polarized incident radiation by a structure. The first and second detected representations are derived respectively from first and second polarization components of the redirected radiation. An asymmetry in the first detected representation comprises a contribution from the parameter of interest and a contribution from one or more other sources of asymmetry. An asymmetry in the second detected representation comprises a larger contribution from said one or more other sources of asymmetry relative to a contribution from the parameter of interest. A combination of the first and second detected representations is used to determine a value of the parameter of interest.

Abstract: Metrology apparatus and methods are disclosed for measuring a structure formed on a substrate. In one arrangement, different components of a radiation beam are selectively extracted after reflection from the structure and independently detected. For each component, radiation is selected from one of a plurality of predetermined regions in a downstream pupil plane of the optical system downstream from the structure. Radiation is further selected from one of two predetermined orthogonal polarization states. The predetermined orthogonal polarization states are oriented differently as a pair for each of at least a subset of components comprising radiation selected from different predetermined regions in the downstream pupil plane.

Abstract: Methods and apparatus for estimating an unknown value of at least one of a plurality of sets of data, each set of data including a plurality of values indicative of radiation diffracted and/or reflected and/or scattered by one or more features fabricated in or on a substrate, wherein the plurality of sets of data include at least one known value, and wherein at least one of the plurality of sets of data includes an unknown value, the apparatus including a processor to estimate the unknown value of the at least one set of data based on: the known values of the plurality of sets of data, a first condition between two or more values within a set of data of the plurality of sets of data, and a second condition between two or more values being part of different sets of data of the plurality of the sets of data.

Abstract: An apparatus having: a system configured to measure an object; a base structure; an object support constructed to hold the object, the object support movably supported on the base structure; a balance mass configured to absorb a reaction force arising from movement of the object support; an actuator connected to the balance mass and the base structure, the actuator configured to apply a force to the balance mass and the base structure; a sensor configured to produce a signal for a measured characteristic of the base structure corresponding to a disturbance, or its effect, acting on the base structure; and a control system configured to determine, based on at least the signal for the measured characteristic of the base structure, a signal for the actuator to apply a force to the base structure and/or the balance mass.

Abstract: A lithographic apparatus applies a device pattern at multiple fields across a substrate. A height map is decomposed into a plurality of components. A first height map component represents topographical variations associated with the device pattern. One or more further height map components represent other topographical variations. Using each height map component, control set-points are calculated according to a control algorithm specific to each component. The control set-points calculated for the different height map components are then combined and used to control imaging of the device pattern to the substrate. The specific control algorithms can be different from one another, and may have differing degrees of nonlinearity. The combining of the different set-points can be linear. Focus control in the presence of device-specific topography and other local variations can be improved.

Abstract: A spectroscopic scatterometer detects both zero order and higher order radiation diffracted from an illuminated spot on a target grating. The apparatus forms and detects a spectrum of zero order (reflected) radiation, and separately forms and detects a spectrum of the higher order diffracted radiation. Each spectrum is formed using a symmetrical phase grating, so as to form and detect a symmetrical pair of spectra. The pair of spectra can be averaged to obtain a single spectrum with reduced focus sensitivity. Comparing the two spectra can yield information for improving height measurements in a subsequent lithographic step. The target grating is oriented obliquely so that the zero order and higher order radiation emanate from the spot in different planes. Two scatterometers can operate simultaneously, illuminating the target from different oblique directions. A radial transmission filter reduces sidelobes in the spot and reduces product crosstalk.

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in said multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.