Abstract: A method of aligning a pair of complementary diffraction patterns having a first complementary diffraction pattern and a second complementary diffraction pattern, the pair of complementary diffraction patterns obtained from performance of a metrology process on a structure formed by a lithographic process. The method includes performing at least a fine alignment stage to align the pair of complementary diffraction patterns. The alignment stage includes: interpolating measured values of the first complementary diffraction pattern over at least a portion of a detector area; and minimizing a residual between measured values in the second complementary diffraction pattern and corresponding interpolated values from the interpolation of the first complementary diffraction pattern, by one or both of translation and rotation of the second complementary diffraction pattern.

Abstract: The present invention provides a method for determining overlay. The method comprises obtaining an initial overlay estimate relating to a first set of targets and data about a second set of targets, wherein the data for a target comprises an intensity measurement of the target for each of a group of different wavelengths.

Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.

Abstract: An apparatus and method for estimating a parameter of a lithographic process and an apparatus and method for determining a relationship between a measure of quality of an estimate of a parameter of a lithographic process are provided. In the apparatus for estimating the parameter a processor is configured to determine a quality of the estimate of the parameter relating to the tested substrate based on a measure of feature asymmetry in the at least first features of the tested substrate and further based on a relationship determined for a plurality of corresponding at least first features of at least one further substrate representative of the tested substrate, the relationship being between a measure of quality of an estimate of the parameter relating to the at least one further substrate and a measure of feature asymmetry in the corresponding first features.

Abstract: An actuator system configured to position an object, the actuator system includes a piezo actuator having an actuator contact surface. The piezo actuator is configured to exert a force via the actuator contact surface onto the object. The piezo actuator includes a transparent piezo material. The actuator system further has an optical position sensor configured to measure a position of the actuator contact surface. The optical position sensor is configured to transmit an optical beam through the transparent piezo material to the actuator contact surface. The optical position sensor may form an interferometer.

Abstract: An apparatus including an illumination system to condition a radiation beam, a support to support a patterning device, the patterning device capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, a projection system to project the patterned radiation beam onto a target portion of the substrate, and a control system configured to: receive pattern data characterizing a pattern distribution, receive radiation data characterizing the radiation beam, determine a dissipation distribution of the pattern based on the pattern data and the radiation data, determine deformation of the pattern by applying the dissipation distribution in a thermo-mechanical model of the patterning device, and determine a control signal to control a component of the apparatus based on the deformation of the pattern.

Abstract: A movable support configured to support an object, the support including: a support plane to support the object, an actuator assembly to move the movable support in a first direction and in a second direction perpendicular to the first direction, wherein the first direction and the second direction extend in a plane parallel to the support plane, wherein the actuator assembly includes: a first actuator configured to exert a first actuation force in a first actuation direction, the first actuation direction being parallel to the support plane, a second actuator configured to exert a second actuation force in a second actuation direction, the second actuation direction being parallel to the support plane, wherein the first actuation direction and the second actuation direction are arranged non-parallel and non-perpendicular with respect to each other.

Abstract: A membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane includes one or more high doped regions wherein the membrane is doped with a dopant concentration greater than 1017 cm?3, and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein the high doped regions are comprised within some or all of the additional layers.

Abstract: A support apparatus for a lithographic apparatus has an object holder and an extraction body radially outward of the object holder. The object holder is configured to support an object. The extraction body includes an extraction opening configured to extract fluid from a top surface of the support apparatus. The extraction body is spaced from the object holder such that the extraction body is substantially decoupled from the object holder. The extraction body comprises a projection configured such that it surrounds the object holder and such that, in use, a layer of liquid is retained on the projection and in contact with an object supported on the object holder.

Abstract: An optical system (OS) for focusing a beam of radiation (B) on a region of interest in a metrology apparatus is described. The beam of radiation (B) comprises radiation in a soft X-ray or Extreme Ultraviolet spectral range. The optical system (OS) comprises a first stage (S1) for focusing the beam of radiation at an intermediate focus region. The optical system (OS) comprises a second stage (S2) for focusing the beam of radiation from the intermediate focus region onto the region of interest. The first and second stages each comprise a Kirkpatrick-Baez reflector combination. At least one reflector comprises an aberration-correcting reflector.

Abstract: A lithographic apparatus applies patterns to substrates, the substrates being processed as a plurality of lots. Each lot of substrates receives a particular layer pattern under layer-specific operating conditions. A thermal model is provided for modeling and compensating one or more characteristics of thermal behavior of components within the lithographic apparatus, in response to the varying layer-specific operating conditions associated with a sequence of lots. The thermal model is also used to simulate thermal behavior of the apparatus when processing a given collection of lots in different possible sequences. Based on comparison of the simulated thermal behavior in different sequences of lots, an optimized sequence is determined. Optionally, lot sequencing rules are determined and used to obtain a preferred thermal behavior when processing a collection of lots in the future.

Abstract: A method comprising: evaluating a plurality of polarization characteristics associated with measurement of a metrology target of a substrate processed using a patterning process, against one or more measurement quality parameters; and selecting one or more polarization characteristics from the plurality of polarization characteristics based on one or more of the measurement quality parameters

Abstract: A method, includes illuminating a structure of a metrology target with radiation having a linear polarization in a first direction, receiving radiation redirected from the structure to a polarizing element, wherein the polarizing element has a polarization splitting axis at an angle to the first direction, and measuring, using the sensor system, an optical characteristic of the redirected radiation.

Abstract: Multilayered product structures are formed on substrates by a combination of patterning steps, physical processing steps and chemical processing steps. An inspection apparatus illuminates a plurality of target structures and captures pupil images representing the angular distribution of radiation scattered by each target structure. The target structures have the same design but are formed at different locations on a substrate and/or on different substrates. Based on a comparison of the images the inspection apparatus infers the presence of process-induced stack variations between the different locations. In one application, the inspection apparatus separately measures overlay performance of the manufacturing process based on dark-field images, combined with previously determined calibration information. The calibration is adjusted for each target, depending on the stack variations inferred from the pupil images.

Abstract: A target formed on a substrate, the target having: an alignment structure; and a metrology structure; wherein the alignment structure comprises structures that are arranged to generate a beat pattern when the alignment structure is illuminated with source radiation. Advantageously, when the target is illuminated, the beat pattern that appears in an image of the target allows the target to be easily identified using a pattern recognition technique.

Abstract: A device manufacturing method includes conditioning a beam of radiation using an illumination system. The conditioning includes controlling an array of individually controllable elements and associated optical components of the illumination system to convert the radiation beam into a desired illumination mode, the controlling including allocating different individually controllable elements to different parts of the illumination mode in accordance with an allocation scheme, the allocation scheme selected to provide a desired modification of one or more properties of the illumination mode, the radiation beam or both. The method also includes patterning the radiation beam having the desired illumination mode with a pattern in its cross-section to form a patterned beam of radiation, and projecting the patterned radiation beam onto a target portion of a substrate.

Abstract: A radiation source for a lithographic apparatus, in particular a laser-produced plasma source includes a fan unit surrounding but not obstructing the collected radiation beam that is operated to generate a flow in a buffer gas away from the optical axis. The fan unit can include a plurality of flat or curved blades generally parallel to the optical axis and driven to rotate about the optical axis.

Abstract: A lithographic apparatus having: a substrate table constructed to hold a substrate; a projection system configured to project a patterned radiation beam onto a target portion of the substrate; a substrate surface actuator including a fluid opening for fluid flow therethrough from/onto a facing surface facing the substrate surface actuator to generate a force between the substrate surface actuator and the facing surface, the facing surface being a top surface of the substrate or a surface substantially co-planar with the substrate; and a position controller to control the position and/or orientation of a part of the facing surface by varying fluid flow through the fluid opening to displace the part of the facing surface relative to the projection system.

Abstract: A laser radiation source for a lithographic tool comprising a laser module to emit a first laser beam having a first wavelength and a second laser beam having a second wavelength, a beam separation device to separate the optical paths of the first and second laser beams and substantially recombine the optical paths, a beam delivery system to direct the first and second laser beams to a fuel target and an optical isolation apparatus to: adjust the polarization state of the first laser beam, adjust the polarization state of the second laser beam and to block radiation having the adjusted polarization states such that the reflection of the first laser beam and the reflection of the second laser beam are substantially blocked from propagating towards the laser module.

Abstract: A pattern is applied to a substrate by a lithographic apparatus as part of a lithographic manufacturing system. Structures are produced with feature sizes less than 10 nm. A target includes one or more gratings with a direction of periodicity. A detector captures one or more diffraction spectra, to implement small angle X-ray scattering metrology. One or more properties, such as linewidth (CD), are calculated from the captured spectra for example by reconstruction. The irradiation direction defines a non-zero polar angle relative to a direction normal to the substrate and defines a non-zero azimuthal angle relative to the direction of periodicity, when projected onto a plane of the substrate. By selecting a suitable azimuthal angle, the diffraction efficiency of the target can be enhanced by a large factor. This allows measurement time to be reduced significantly compared with known techniques.