Abstract: A lithographic apparatus with a cover plate formed separately from a substrate table, the cover plate configured to be to a side of the substrate during exposure, the cover plate being removable from the substrate table and supported on the substrate table by a protrusion. The lithographic apparatus further includes a linear encoder system configured to measure at least translation of the substrate table, a part of the linear encoder system being on the substrate table and located outward of the cover plate.

Abstract: In a lithographic projection apparatus, a structure surrounds a space between the projection system and a substrate table of the lithographic projection apparatus. A gas seal is formed between said structure and the surface of said substrate to contain liquid in the space.

Abstract: A method of aligning a template and a substrate for imprint lithography involves using a mask pattern of the template and a luminescent marker pattern of the substrate, the method including aligning the template mask pattern and the substrate marker pattern using a radiation intensity measurement of radiation emitted by the luminescent marker pattern and having passed the template mask pattern. The mask pattern and the luminescent marker pattern may each be shaped to provide a turning point in the intensity of detected radiation emitted from the marker pattern, and passing through the mask pattern to a detector, as a function of relative displacement at the aligned position. The displacement of the template and substrate may be aligned by identifying the turning point in radiation intensity. The marker pattern may be fluorescent with the emitted radiation excited by a radiation source.

Abstract: An apparatus and method for controlling temperature of a patterning device in a lithographic apparatus, by flowing gas across the patterning device. A patterning apparatus includes: a patterning device support structure configured to support a patterning device; a patterning device conditioning system including a first gas outlet configured to provide a gas flow over a surface of the patterning device and a second gas outlet configured to provide a gas flow over a part of a surface of the patterning device support structure not supporting the patterning device; and a control system configured to separately control the temperature of the gas exiting the first and second gas outlets such that the gas exiting the second gas outlet is at a higher temperature than the gas exiting the first gas outlet and/or to separately control the temperature and gas flow rate of the gas exiting the first and second gas outlets.

Abstract: Corrections are calculated for use in controlling a lithographic apparatus. Using a metrology apparatus a performance parameter is measured at sampling locations across one or more substrates to which a lithographic process has previously been applied. A process model is fitted to the measured performance parameter, and an up-sampled estimate is provided for process-induced effects across the substrate. Corrections are calculated for use in controlling the lithographic apparatus, using an actuation model and based at least in part on the fitted process model. For locations where measurement data is available, this is added to the estimate to replace the process model values. Thus, calculation of actuation corrections is based on a modified estimate which is a combination of values estimated by the process model and partly on real measurement data.

Abstract: A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.

Abstract: A method of determining a parameter of a pattern transfer process and device manufacturing methods are disclosed. In one arrangement, a method includes obtaining a detected representation of radiation redirected by a structure. The structure is a structure formed by applying a pattern processing to a pattern transferred to an earlier formed structure by a pattern transfer process. The pattern processing is such as to remove one or more selected regions in a horizontal plane of the earlier formed structure to form a pattern in the horizontal plane. The pattern is defined by a unit cell that is mirror symmetric with respect to an axis of mirror symmetry. An asymmetry in the detected representation is determined. The determined asymmetry in the detected representation is used to determine a parameter of the pattern transfer process.

Abstract: A radioisotope production apparatus (RI) comprising an electron source arranged to provide an electron beam (E). The electron source comprises an electron injector (10) and an electron accelerator (20). The radioisotope production apparatus (RI) further comprises a target support structure configured to hold a target (30) and a beam splitter (40) arranged to direct the a first portion of the electron beam along a first path towards a first side of the target (30) and to direct a second portion of the electron beam along a second path towards a second side of the target (30).

Abstract: A method, involving illuminating at least a first periodic structure of a metrology target with a first radiation beam having a first polarization, illuminating at least a second periodic structure of the metrology target with a second radiation beam having a second different polarization, combining radiation diffracted from the first periodic structure with radiation diffracted from the second periodic structure to cause interference, detecting the combined radiation using a detector, and determining a parameter of interest from the detected combined radiation.

Abstract: An inspection substrate for inspecting a component, such as a liquid confinement system, of an apparatus for processing production substrates is discussed. The inspection substrate includes a body having dimensions similar to a production substrate so that the inspection substrate is compatible with the apparatus, an illumination device, such as light emitting diodes, embedded in the body, a sensor, such as an imaging device or a pressure sensor, that is embedded in the body and configured to generate inspection information, such as image data, relating to a parameter of the component of the apparatus proximate to the inspection substrate, and a storage device embedded in the body and configured to store the inspection information.

Abstract: Disclosed is a system configured to project a beam of radiation onto a target portion of a substrate within a lithographic apparatus. The system comprises a mirror (510) having an actuator (500) for positioning the mirror and/or configuring the shape of the mirror, the actuator also providing active damping to the mirror, and a controller (515a, 515b) for generating actuator control signals for control of said actuator(s). A first coordinate system is used for control of said actuator(s) when positioning said mirror and/or configuring the shape of said mirror and a second coordinate system is used for control of said actuator(s) when providing active damping to said mirror.

Abstract: A lithographic apparatus having a first outlet to provide a thermally conditioned fluid with a first flow characteristic to at least part of a sensor beam path, and a second outlet associated with the first outlet and to provide a thermally conditioned fluid with a second flow characteristic, different to the first flow characteristic, adjacent the thermally conditioned fluid from the first outlet.

Abstract: A focus monitoring arrangement (1000) is provided for a scatterometer or other optical system. A first focus sensor (510) provides a first focus signal (S1-S2) indicating focus relative to a first reference distance (z1). A second focus sensor (1510) for providing a second focus signal (C1-C2) indicating focus relative to a second reference distance (z2). A processor (1530) calculates a third focus signal by combining the first focus signal and the second focus signal. By varying the proportions of the first and second focus signals in calculating the third focus signal, an effective focus offset can be varied electronically, without moving elements.

Abstract: A reflector (2) comprising a plate (4) supported by a substrate (8), wherein the plate has a reflective surface (5) and is secured to the substrate by adhesive free bonding, and wherein a cooling channel array (10) is provided in the reflector. The channels (16) of the cooling channel array may be formed from open channels in a surface of the substrate, the open channels being closed by the plate to create the channels.

Abstract: An immersion lithographic apparatus is configured to subject a photosensitive layer on a substrate to a patterned beam of radiation via a liquid. The immersion lithographic apparatus includes a moveable object having a surface, a fluid handling system to control a presence of the liquid in a volume restricted by the surface, the fluid handling system, and a free surface of the liquid, the free surface extending between the surface and the fluid handling system; and a heating system configured to locally heat a portion of the liquid at a receding side of a periphery edge of the volume in contact with the surface, where the object is receding from the volume along a direction of movement of the object relative to the fluid handling system.

Abstract: Focus performance of a lithographic apparatus is measured using pairs of targets that have been exposed (1110) with an aberration setting (e.g. astigmatism) that induces a relative best focus offset between them. A calibration curve (904) is obtained in advance by exposing similar targets on FEM wafers (1174, 1172). In a set-up phase, calibration curves are obtained using multiple aberration settings, and an anchor point (910) is recorded, where all the calibration curves intersect. When a new calibration curve is measured (1192), the anchor point is used to produce an adjusted updated calibration curve (1004?) to cancel focus drift and optionally to measure drift of astigmatism. Another aspect of the disclosure (FIG. 13-15) uses two aberration settings (+AST, ?AST) in each measurement, reducing sensitivity to astigmatism drift. Another aspect (FIG. 16-17) uses pairs of targets printed with relative focus offsets, by double exposure in one resist layer.

Abstract: Disclosed is a method and associated apparatus of determining a performance parameter (e.g., overlay) of a target on a substrate, and an associated metrology apparatus. The method comprises estimating a set of narrowband measurement values from a set of wideband measurement values relating to the target and determining the performance parameter from said set of narrowband measurement values. The wideband measurement values relate to measurements of the target performed using wideband measurement radiation and may correspond to different central wavelengths. The narrowband measurement values may comprise an estimate of the measurement values which would be obtained from measurement of the target using narrowband measurement radiation having a bandwidth narrower than said wideband measurement radiation.

Abstract: Methods of manufacturing a pellicle for a lithographic apparatus including a method involving depositing at least one graphene layer on a planar surface of a substrate. The substrate has a first substrate portion and a second substrate portion. The method further includes removing the first substrate portion to form a freestanding membrane from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.

Abstract: A method of determining compatibility of a patterning device with a lithographic apparatus. The method includes determining an intensity distribution of a conditioned radiation beam across a sensor plane of an illumination system of the lithographic apparatus. The method further includes using the determined intensity distribution to calculate a non-uniformity of intensity caused by contamination and/or degradation of a collector. The method further includes determining the effect of the non-uniformity on a characteristic of an image of the patterned radiation beam. The method further includes determining the compatibility of the patterning device with the lithographic apparatus based on the effect of the non-uniformity on the characteristic.

Abstract: A device manufacturing method is disclosed. A radiated spot is directed onto a target pattern formed on a substrate. The radiated spot is moved along the target pattern in a series of discrete steps, each discrete step corresponding to respective positions of the radiated spot on the target pattern. Measurement signals are generated that correspond to respective ones of the positions of the radiated spot on the target pattern. A single value is determined that is based on the measurement signals and that is representative of the property of the substrate.